Description
This Alcatel 1915 LMM contains an Alcatel
DFB laser with monolithically integrated
electro-absor ption modulator (ILM). This
chip provides much lower dispersion
penalties than a directly modulated DFB,
without the complexity of LiN bO3 external
modulators. The Alcatel 1915 LMM is
optimized for 10 Gbit/s TDM transmission
systems.
Features
• 7-pin package with either GPO or K
connector RF input
• Very low dispersion penalty over 80 Km
for 10 Gbit/s operation
• InGaAsP monolithically integrated DFB laser and
modulator chip
• High frequency RF connector package with
50 Ω RF impedance
• Low drive voltage ( ≤ 2 Vpp)
• Internal optical isolator
• High power available
• Wavelength selection according to ITU-T G.692
Applications
• STM-64 and OC-192 intermediate and long
reach WDM transmission systems
• Terminals for submarine WDM transmission
systems
Optical characteristics
Parameter Symb. Conditions Min Max Units
Threshold current Ith CW, Vbias = 0 V 5 35 mA
Operating current Iop CW, Vbias = 0 V 60 80 mA
Optical output power PAVE
PAVE
Iop, Vmod, [1], [2]
Iop, Vmod, [1], [3] 0
- 3 dBm
dBm
Laser forward voltage VF CW, Iop, Vbias = 0 V 2 V
Modulator bias voltage Vbias - 2 0 V
Modulator drive voltage Vmod See [1] 2 V
Dynamic extinction ratio DER Iop, [1], [2 ], [3] 10 dB
Emission wavelength λm See table 1 nm
∆(emitted-tar get) wavelength ∆λe See [4 ] - 0.1 + 0.1 nm
Laser chip tem perature range for tunability Tλ See [4] 20 30 °C
Side mode suppr ession SMSR See [1] 35 dB
Cut off fr equency S21 - 3 dB, Vbias = - 1 V 10 GHz
RF return loss S11 DC to 7 GHz 10 dB
Dispersion penalty ∆s See [1], [2 ], [3] 2 dB
Tracking error TR Tsubmount = 25 °C, Tcase = 70 °C
If = 100 mA, Q = 10 log [P(70 °C)/P(25 °C)] - 0.5 0.5 dB
Rise time / Fall time Tr/Tf See [1], 10%, 90% 45 ps
Wavelength drift vs Tcase ∆λ/∆Tc 0.5 pm/°C
Monitor diode current Im Iop, VM = - 5 V 0.2 1.5 mA
Dark current Id 0.1 µA
TEC current It∆T= 50 °C, Io
= 100 mA, TC= 70 °C, Vbias= - 1 V 1.3 A
TEC voltage Vt ∆T= 50 °C, Iop= 100 mA, TC= 70 °C, Vbias= - 1 V 2.5 V
Thermistor resistance RTH
9.5 10.5 KΩ
Notes : All limits start of life Tcase = 25 °C, Tsubmount = 25 °C, m o nitor bias = - 5 V, unless otherwise stated.
[1] BER = 10-10; 9,953 Gbit/s modulation; 223-1 PRBS; NZR line code [2] 800 ps/nm dispersion, assuming fiber with an average dispersion of 18 ps/nm/km
[3] 1600 ps/nm dispersion, assuming fiber with an average dispersion of 18 ps/nm/km [4] Tsubmount = Tλ. Tλ is chip temperature required to meet target wavelength (see table 1)
Absolute maximum ratings
Parameters Min Ma
Unit
O
eratin
case tem
erature -5 70 °C
Stora
e tem
erature -40 85 °C
Laser forward current 150 m
Laser reverse volta
e 2
Modulator forward volta
e 1
Modulator reverse volta
e 5
Photodiode forward current 1 m
Photodiode reverse volta
e20
TEC Volta
e2.8
TEC Current 1.4
ESD a
lied on modulator 500
ESD a
lied on laser
1
2000
Lead solderin
time
at 260°C
10 s
Packin
Mountin
Screw Tor
ue 0.2 nm
[1] Human body model Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
lcatel 1915 L MM
10 Gbit/s WDM digital Laser Module with
integrated electro-absorption Modulator