Silicon Rectifiers IN4719-1N4/729,1IN499 /1No003 B Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes G rh _ A --- 450 --- 11.43 Dia. C B -980 -- 24.89 --- = C - .300 --- 7.62 D 046 .056 1.17 1.42 Dia. E --- .350 --- 8.89 Dia. B F -960 -- 24.38 G -031 .035 79 89 Dia. H 145 165 3.68 4.19 lL o E A 1N4719-1N4725 1N49971N5003 Microsemi Peak Reverse Catalog Number Voltage e High Surge Capability 1N4719, 1N4997 50V e 175C Junction Temperature 1N4720, 1N4998 100V 1N4721, 1N4999 200V VRRM 50 to 1000 Volts 1N4722, 1N5000 400V e 3 Amp Current Rating 1N4723, 1N5001 600V j 1N4724. 1N5002 B00V e Hermetically Sealed 1N4725, 1N5003 1000V Electrical Characteristics Average forward current IF(AV) 3.0 Amps TA = 119C, Square wave, R@uL = 12C/W, L = 1/4 Maximum surge current IFSM 300 Amps 8.3ms, half sine, TJ = 175C Max peak forward voltage VFM 1.0 Volts IFM = 3.0A:TJ = 25C* Max peak reverse current IRM 25 pA VRRM, J = 25C *Pulse test: Pulse width 300 usec, Duty cycle 2% Thermal and Mechanical Characteristics Storage temperature range TsT 65C to 175C Operating junction temp range Ty 65C to 175C Maximum thermal resistance L = 1/4 RuL 12C/W Junction to Lead Weight .08 ounces (2.3 grams) typical 12-11-01 Rev. 2 COLORADO 800 Hoyt Street Broomfield, CO. 80020 icrosemi m2 FAX: (303) 466-3775 www.microsemi.com IN4719-1N4/25, 1N4997-1N3005 Figure 1 Typical Forward Characteristics 100 50 20 10 5.0 ad o = Oo 2 N Instantaneous Forward Current Amperes Oo on 2 a 2 4 As} 8 10 12 14 1.6 Instantaneous Forward Voltage Volts Figure 2 Typical Reverse Characteristics 10000 = So Oo o 100 = Oo = OQ Typical Reverse Current uA 2 a 0 200 400 Reverse Voltage Volts 600 800 1000 Figure 3 Forward Current Derating s 180 5170 S s N & : NS @ 150 \ & \ \ \ 2140 aN 8 \ 8 , = 1350 g = 120 = 110 60 120} | 1804 0 1 2 3 4 5 Average Forward Current Amperes 12-11-01 Rev. 2