© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 10
1Publication Order Number:
MJE2955T/D
MJE2955T (PNP)
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
•DC Current Gain Specified to 10 A
•High Current Gain − Bandwidth Product −
fT= 2.0 MHz (Min) @ IC
= 500 mAdc
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 60 Vdc
Collector−Base Voltage VCB 70 Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current IC10 Adc
Base Current IB6.0 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
(Note 1)
75
0.6
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case qJC 1.67 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS − 75 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
http://onsemi.com
23
MARKING DIAGRAM
MJExx55T = Device Code
xx = 29 or 30
G=Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MJExx55TG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
MJE2955T (PNP) MJE3055T (NPN)
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 200 mAdc, IB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
ÎÎÎÎ
60
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
700
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEX
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.0
5.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150°C)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICBO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.0
10
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
5.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (Note 2)
(IC = 4.0 Adc, VCE = 4 0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
20
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
100
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (Note 2)
(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.1
8.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (Note 2)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
1.8
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain−Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
MHz
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 20%.
10
5.0
Figure 1. Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.2
0.1 20 30
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25°C (D = 0.1)
IC, COLLECTOR CURRENT (AMP)
dc
7.0 10
5.0 ms 1.0ms
50 60
0.5
7.0
3.0
0.7
0.3
TJ = 150°C
100msThere are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150°C. TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) v 150°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown. (See AN415A)
MJE2955T (PNP) MJE3055T (NPN)
http://onsemi.com
3
0
TC, CASE TEMPERATURE (°C)
75 100 17525 50
Figure 2. DC Current Gain
125 150
500
0.01
Figure 3. Power Derating
IC, COLLECTOR CURRENT (AMP)
5.0
0.02 0.05 0.1 0.2 1.0 2.0 100.5
300
200
100
50
30
90
0
80
60
40
70
50
hFE, DC CURRENT GAIN
20
10
5.0
TJ = 150°C
25°C
-55°C
VCE = 2.0 V
PD, POWER DISSIPATION (WATTS)
30
10
20
MJE3055T
MJE2955T
0.1
IC, COLLECTOR CURRENT (AMP)
0.5 1.0 100.2 0.3 2.0 3.0
Figure 4. “On” Voltages
2.0
0
1.6
1.2
0.8
V, VOLTAGE (VOLTS)
0.4
5.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
MJE2955T
0.1
IC, COLLECTOR CURRENT (AMP)
0.5 1.0 100.2 0.3 2.0 3.0
1.4
0
1.2
1.0
0.8
V, VOLTAGE (VOLTS)
0.4
5.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
MJE3055T
0.6
0.2
ORDERING INFORMATION
Device Package Shipping
MJE2955T TO−220
50 Units / Rail
MJE2955TG TO−220
(Pb−Free)
MJE3055T TO−220
MJE3055TG TO−220
(Pb−Free)
MJE2955T (PNP) MJE3055T (NPN)
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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MJE2955T/D
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