2N5114 SERIES SINGLE P-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE 75 LOW CAPACITANCE 6pF TO-18 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to 200C Junction Operating Temperature -55 to 200C G 2 S 1 3 D Maximum Power Dissipation Continuous Power Dissipation 500mW Maximum Currents Gate Current -50mA Maximum Voltages Gate to Drain 30V Gate to Source 30V STATIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated) SYM. CHARACTERISTIC TYP 2N5114 MIN BVGSS Gate to Source Breakdown Voltage 30 VGS(off) Gate to Source Cutoff Voltage 5 VGS(F) Gate to Source Forward Voltage VDS(on) Drain to Source On Voltage MAX 2N5115 MIN MAX 30 10 -0.7 -1 -1.0 -1.3 3 2N5116 MIN 1 Drain to Source Saturation Current2 IGSS Gate Leakage Current 5 IG Gate Operating Current -5 Drain Cutoff Current 500 -60 500 Drain to Source On Resistance Linear Integrated Systems IG = -1mA, VDS = 0V VGS = 0V, ID = -15mA VGS = 0V, ID = -3mA -0.6 -5 -25 mA 500 VDS = -18V, VGS = 0V VDS = -15V, VGS = 0V VGS = 20V, VDS = 0V VDG = -15V, ID = -1mA pA -500 -10 -500 -10 rDS(on) V VGS = 0V, ID = -7mA -90 -15 -10 ID(off) VDS = -15V, ID = -1nA -0.8 -30 CONDITIONS IG = 1A, VDS = 0V 4 -1 -0.5 IDSS UNIT 30 6 -1 -0.7 MAX VDS = -15V, VGS = 7V VDS = -15V, VGS = 5V -500 75 100 VDS = -15V, VGS = 12V 150 VGS = 0V, ID = -1mA * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 DYNAMIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated) SYM. 2N5114 2N5115 2N5116 CHARACTERISTIC TYP gfs Forward Transconductance 4.5 mS gos Output Conductance 20 S rds(on) Ciss MIN MAX Drain to Source On Resistance Input Capacitance MIN MAX MIN MAX 75 100 150 20 25 25 25 5 7 UNIT CONDITIONS VDS = -15V, ID = -1mA f = 1kHz VGS = 0V, ID = 0mA f = 1kHz VDS = -15V, VGS = 0V f = 1MHz VDS = 0V, VGS = 12V f = 1MHz VDS = 0V, VGS = 7V f = 1MHz VDS = 0V, VGS = 5V f = 1MHz VDG = 10V, ID = 10mA f = 1 kHz pF Crss Reverse Transfer Capacitance 6 7 6 en Equivalent Noise Voltage 7 20 nV/Hz SWITCHING CHARACTERISTICS (max) SYM. td(on) tr td(off) tf CHARACTERISTIC SWITCHING CIRCUIT CHARACTERISTICS 2N5114 2N5115 2N5116 6 10 12 10 20 30 6 8 10 15 30 50 Turn On Time Turn Off Time UNITS 2N5114 2N5115 2N5116 VDD -10V -6V -6V VGG ns TO-18 SYM. 12V 8V RL 430 20V 910 2k RG 100 220 390 ID(on) -15mA -7mA -3mA VGS(H) 0V 0V 0V VGS(L) -11V -7V -5V SWITCHING TEST CIRCUIT Three Lead VGG VDD 0.230 DIA. 0.209 0.195 DIA. 0.175 0.030 MAX. 0.150 0.115 VGS(H) VGS(L) 3 LEADS RL 1.2k 0.1F 0.500 MIN. RG 0.019 DIA. 0.016 51 0.100 0.050 Sampling Scope 2 1 7.5k 1.2k 3 51 51 45 0.046 0.036 0.048 0.028 NOTES 1. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. Pulse test: PW 300s, Duty Cycle 3% Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio n or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261