FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE 75Ω
LOW CAPACITANCE 6pF
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -55 to 200°C
Junction Operating Temperature -55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation 500mW
Maximum Currents
Gate Current -50mA
Maximum Voltages
Gate to Drain 30V
Gate to Source 30V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
2N5114 2N5115 2N5116
SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS
BVGSS Gate to Source Breakdown Voltage 30 30 30 IG = 1µA, VDS = 0V
VGS(off) Gate to Source Cutoff Voltage 5 10 3 6 1 4 VDS = -15V, ID = -1nA
VGS(F) Gate to Source Forward Voltage -0.7 -1 -1 -1 IG = -1mA, VDS = 0V
-1.0 -1.3 VGS = 0V, ID = -15mA
-0.7 -0.8 VGS = 0V, ID = -7mA
VDS(on) Drain to Source On Voltage
-0.5 -0.6
V
VGS = 0V, ID = -3mA
-30 -90 VDS = -18V, VGS = 0V
IDSS Drain to Source Saturation Current2 -15 -60 -5 -25
mA VDS = -15V, VGS = 0V
IGSS Gate Leakage Current 5 500 500 500 VGS = 20V, VDS = 0V
IG Gate Operating Current -5 VDG = -15V, ID = -1mA
-10 -500 VDS = -15V, VGS = 12V
-10 -500 VDS = -15V, VGS = 7V
ID(off) Drain Cutoff Current
-10 -500
pA
VDS = -15V, VGS = 5V
rDS(on) Drain to Source On Resistance 75 100 150 Ω V
GS = 0V, ID = -1mA
G
S
D
2
1
3
BOTTOM VIEW
TO-18
Linear Integrated System
s
2N5114 SERIES
SINGLE P-CHANNEL JFET
Linear Integrated System
s
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
2N5114 2N5115 2N5116
SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS
gfs Forward Transconductance 4.5 mS
gos Output Conductance 20 µS
VDS = -15V, ID = -1mA
f = 1kHz
rds(on) Drain to Source On Resistance 75 100 150 Ω VGS = 0V, ID = 0mA
f = 1kHz
Ciss Input Capacitance 20 25 25 25 VDS = -15V, VGS = 0V
f = 1MHz
5 7 VDS = 0V, VGS = 12V
f = 1MHz
6 7 VDS = 0V, VGS = 7V
f = 1MHz
Crss Reverse Transfer Capacitance
6 7
pF
VDS = 0V, VGS = 5V
f = 1MHz
en Equivalent Noise Voltage 20
nV/√Hz VDG = 10V, ID = 10mA
f = 1 kHz
SWITCHING CHARACTERISTICS (max)
SYM. CHARACTERISTIC 2N5114 2N5115 2N5116 UNITS
td(on) 6 10 12
tr Turn On Time 10 20 30
td(off) 6 8 10
tf Turn Off Time 15 30 50
ns
SWITCHING CIRCUIT CHARACTERISTICS
SYM. 2N5114 2N5115 2N5116
VDD -10V -6V -6V
VGG 20V 12V 8V
RL 430Ω 910Ω 2kΩ
RG 100Ω 220Ω 390Ω
ID(on) -15mA -7mA -3mA
VGS(H) 0V 0V 0V
VGS(L) -11V -7V -5V
Linear Integrated System
s
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
n or
R
G
0.1µF
51
Ω
R
L
Sampling
Scope
1.2k
Ω
7.5k
Ω
51
Ω
51
Ω
1.2k
Ω
V
GS(H)
V
GS(L)
TO-18
Three Lead
0.230
0.209 DIA.
DIA.
0.195
0.175 0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016 DIA.
3 LEADS
2
13
0.046
0.036
45°
0.048
0.028
0.100 0.050
SWITCHING TEST CIRCUIT
V
GG
V
DD
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
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otherwise under any patent or patent rights of Linear Integrated Systems.
