MIXA300PF1200TSF - IXYS - Datasheet.Live

MIXA300PF1200TSF

tentative

Phase leg + free wheeling Diodes + NTC

XPT IGBT Module

5

6

4

12 8 7

10/11

3

9

Part number

MIXA300PF1200TSF

Backside: isolated

C25

CE(sat)

VV1.8

CES

465

1200

=

V= V

I= A

2x

Features / Advantages: Applications: Package:

● High level of integration - only one

power semiconductor module required

for the whole drive

● Rugged XPT design (Xtreme light Punch Through)

results in:

- short circuit rated for 10 µsec.

- very low gate charge

- low EMI

- square RBSOA @ 3x Ic

● Thin wafer technology combined with the XPT design

results in a competitive low VCE(sat)

● Temperature sense included

● SONIC™ diode

- fast and soft reverse recovery

- low operating forward voltage

● AC motor drives

● Pumps, Fans

● Air-conditioning system

● Inverter and power supplies

● UPS

SimBus F

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Height: 17 mm

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

● Isolation Voltage: V~

3000

IXYS reserves the right to change limits, conditions and dimensions. 20121105Data according to IEC 60747and per semiconductor unless otherwise specified

MIXA300PF1200TSF

tentative

-di /dt = A/µs

T = °C

V

CES

V1200

collector emitter voltage

collector emitter saturation voltage

T = 25°C

collect or current A

465

A

C

VJ

Symbol Definition

Ratings

typ. max.min.Conditions Unit

325

V

CE(sat)

total power dissipation 1500 W

collector emitter leakage current

6.5 V

turn-on delay time 110 ns

t

reverse bias safe operating area

A

V

GES

V±20

V

GEM

max. transient gat e e mi t te r v oltage

T = °C

C

V

P

tot

gate emitter threshold voltage

RBSOA

650

±30

T = °C

VJ

V

max. DC gate voltage

I

C25

I

C

T = 25°C

VJ

I = A; V = 15 V

CGE

T = 25°C

VJ

V

GE(th)

I

CES

I = mA; V = V

CGECE

V = V ; V = 0 V

CE CES GE

I

GES

T = 25°C

VJ

gate emitter leakage current V = ±20 V

GE

2.1

2.15

5.95.4

mA

0.3 mA

0.3

1.5

G(on)

total gate charge V = V; V = 15 V; I = A

CE

Q

GE C

885 nC

t

E

d(on)

r

d(off)

f

on

off

68 ns

290 ns

345 ns

20 mJ

42 mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V = V; I = A

V = ±15 V; R = Ω

CE C

GE G

V = ±15 V; R = Ω

GE G

V = V

CEmax

1200

short circuit safe operating area

µs

SCSOA

10T = °C

VJ

V = V; V = ±15 V

CE GE

short circuit duration

t

short circuit current

I

SC

R = Ω; non-repetitive

G

tbd A

R

thJC

thermal resistance junction to case 0.085 K/W

V

RRM

V1200

max. repetitive rev ers e voltage T = 25°C

VJ

T = 25°C

forward current A

265

A

C

185T = °C

C

I

F25

I

F

T = 25°C

forward voltage V

2.20

V

VJ

1.90T = 125°C

VJ

V

F

I = A

F

T = 25°C

reverse current mA

*

mA

VJ

*T = 125°C

VJ

I

RR RRM

T = 125°C

VJ

Q

I

t

rr

RM

rr

38 µC

300 A

350 ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

I = A; V = 0 V

F

FGE

E

rec

15 mJ

reverse recovery energy

R

thJC

thermal resistance junction to case 0.145 K/W

V = V

T = 25°C

C

T = 25°C

VJ

T = °C

VJ

300

12

300

2.2

600

900

4500

600

I

CM

1.8

R

thCH

thermal resistance case to heatsink 0.04 K/W

R

thCH

thermal resistance case to heatsink 0.05 K/W

* not applicable, see Ices value above

IGBT

Diode

600 V

V = V

CEmax

1200

80

125

µA

IXYS reserves the right to change limits, conditions and dimensions. 20121105Data according to IEC 60747and per semiconductor unless otherwise specified

MIXA300PF1200TSF

tentative

Ratings

XXX XX-XXXXX

YYWWx

2D Data Matrix

Logo UL Part number Date Code Location

I

X

M

A

300

PF

1200

T

SF

Part number

IGBT

XPT IGBT

Gen 1 / std

Phase leg + free wheeling Diodes

Thermistor \ Temperature sensor

SimBus F

Module

=

Current Rating [A]

Reverse Voltage [V]

=

Package

T

VJ

°C

M

D

Nm6

mounting torque 3

T

stg

°C125

storage temperature -40

Weight g350

Symbol Definition typ. max.min.Conditions

virt ua l j un ction temp e r ature

Unit

M

T

Nm6

terminal torque 3

VV

t = 1 second

V

t = 1 minute

isolation voltage

mm

12.7

10.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current A

per terminal

150-40

terminal to terminal

SimBus F

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

0 25 50 75 100 125 150

102

103

104

105

R

[]

Typ. NTC resistance vs. temperature

TC[°C]

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MIXA300PF1200TSF 512264Box 3MIXA300PF1200TSFStandard

R

pin-chip

resistance pin to chip 0.65 mΩ

2500

3000

ISOL

V = V

CEsat

+ 2·R·I

C

resp. V = V

F

+ 2·R·I

F

threshold voltage V

mΩ

V

0 max

R

0 max

slope resistance *

1.1

4.6

1.25

8.5

Equivalent Circuits for Simulation

T =

VJ

IV

0

R

0

IGBT Diode

150 °C

* on die level

T = 25°

resistance kΩ

5.25

K

VJ

3375

R

25

B

25/50

5

4.75

temperature coefficient

Symbol Definition typ. max.min.Conditions Unit

Temperature Sensor NTC

IXYS reserves the right to change limits, conditions and dimensions. 20121105Data according to IEC 60747and per semiconductor unless otherwise specified

MIXA300PF1200TSF

tentative

1,2

17

20,5

22

50

57,5

62

94,5

110

122

137

152

0,8

R2,5

0

7,25

11,06

33,92

37,73

60,59

64,4

87,26

7,75

0

3,75

57,96

0,46

10

11

98 7 6 5

1 2

4

3

5

6

4

12 8 7

10/11

3

9

Outlines SimBus F

IXYS reserves the right to change limits, conditions and dimensions. 20121105Data according to IEC 60747and per semiconductor unless otherwise specified

MIXA300PF1200TSF

tentative

01234

0

100

200

300

400

500

600

0 100 200 300 400 500 600

0

10

20

30

40

50

60

70

0

25

50

75

100

125

150

175

012345

0

100

200

300

400

500

600

V

CE

[V]

I

C

[A]

Q

G

[nC]

V

GE

[V]

9V

11 V

5 6 7 8 9 10111213

0

100

200

300

400

500

600

0 200 400 600 800 1000 1200

0

5

10

15

20

T

VJ

= 125°C

13 V

0 100 200 300 400 500 600

0

20

40

60

80

0

200

400

600

800

[mJ]

E

off

Fig. 1 Typ. output characteristics

V

CE

[V]

I

C

[A]

V

GE

=15V

17 V

19 V

Fig. 2 Typ. output characteristics

I

C

[A]

Fig. 3 Typ. transfer characteristics

V

GE

[V]

Fig. 4 Typ. turn-on gate charge

Fig. 5 Typ. turn-on energy & switching times

vs. collector current, inductive switching

Fig. 6 Typ. switching energy

versus gate resistance

E

[mJ]

I

C

[A]

V

GE

=15V

T

VJ

= 25°C

T

VJ

= 125°C

T

VJ

= 25°C

T

VJ

= 125°C

I

C

= 100 A

V

CE

= 600 V

I

C

= 300 A

V

CE

=600 V

V

GE

= ±15 V

T

VJ

= 125°C

0.001 0.01 0.1 1 10

0.00

0.02

0.04

0.06

0.08

0.10

t[s]

single pulse

Fig. 7 Typ. trans. therm. impedance

E

rec(off)

E

on

R

G

= 2.2

V

CE

=600 V

V

GE

= ±15 V

T

VJ

= 125°C

t

d(on)

t

f

0 2 4 6 8 10121416

0

10

20

30

40

50

60

0

50

100

150

200

250

300

Fig. 8Typ. turn-onenergy, switchingtimes

vs.

g

ate resistor, inductive switchin

g

E

[mJ]

R

G

[ ]

E

rec(off)

E

on

t

d(on)

t

r

I

C

= 300 A

V

CE

= 600 V

V

GE

=±15 V

T

VJ

=125°C

0 2 4 6 8 10121416

10

20

30

40

50

200

400

600

800

1000

[mJ]

E

off

Fig.9 Typ. turn-off energy, switching times

vs. gate resistor, inductive switching

R

G

[ ]

I

C

= 300 A

V

CE

=600 V

V

GE

= ±15 V

T

VJ

= 125°C

I

C

[A]

t

d(off)

t

r

t

d(off)

t

r

t

[ns]

t

[ns]

t

[ns]

t

[ns]

Z

thJC

[K/W]

IGBT

IXYS reserves the right to change limits, conditions and dimensions. 20121105Data according to IEC 60747and per semiconductor unless otherwise specified

MIXA300PF1200TSF

tentative

0.001 0.01 0.1 1 10

0.00

0.04

0.08

0.12

0.16

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

0

100

200

300

400

500

600

V

F

[V]

t[s]

I

F

[A]

Z

thJC

[K/W]

single pulse

T

J

=125°C

T

J

=25°C

Fig. 1 Typ. Forward current

versus V

F

Fi

g

.7 T

y

p

.transientthermalim

p

edance

j

unction to case

Fig. 2 Typ. reverse recovery

characteristics

Fig. 3 Typ. reverse recovery

characteristics

Fig. 4 Typ. reverse recovery

characteristics

Fig. 5 Typ. recovery time

t

rr

versus -di

F

/dt

Fig. 6 Typ. recovery energy

E

rec

versus -di/dt

2500 3000 3500 4000 4500

100

200

300

400

I

rr

[A]

di

F

/dt [A/μs]

15

10

4.7

2.2

2500 3000 3500 4000 4500

300

400

500

600

t

rr

[A]

di

F

/dt [A/μs]

15

10

4.7

2.2

0 100 200 300 400 500 600

100

200

300

400

I

rr

[A]

I

F

[A]

I

f

= 300 A

V

R

= 600 V

T

VJ

= 125°C

I

f

=300A

V

R

= 600 V

T

VJ

= 125°C

R

g

=2.2

V

R

= 600 V

T

VJ

= 125°C

0 100 200 300 400 500 600

0

20

40

60

Q

rr

[A]

R

g

= 2.2

V

R

= 600 V

T

VJ

= 125°C

I

F

[A]

Diode

IXYS reserves the right to change limits, conditions and dimensions. 20121105Data according to IEC 60747and per semiconductor unless otherwise specified