Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -20V
▼ Small Package Outline RDS(ON) 160mΩ
▼ Surface Mount Device ID-2.5A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3150 ℃/W
Data and specifications subject to change without notice
AP2313GN-HF
Rating
-20
Halogen-Free Product
1
+12
-2.5
0.83
-55 to 150
-55 to 150
201201044
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3-1.97
Pulsed Drain Current1-10
Thermal Data Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
G
D
S
D
G
S
SOT-23
AP2313GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.01 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-2.8A - - 120 mΩ
VGS=-4.5V, ID=-2.5A - - 160 mΩ
VGS=-2.5V, ID=-2A - - 300 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA - - -1.2 V
gfs Forward Transconductance VDS=-5V, ID=-2A - 4 - S
IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=-2A - 5 8 nC
Qgs Gate-Source Charge VDS=-16V - 1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2 - nC
td(on) Turn-on Delay Time2VDS=-10V - 6 - ns
trRise Time ID=-1A - 17 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 16 - ns
tfFall Time RD=10Ω-5-
ns
Ciss Input Capacitance VGS=0V - 270 430 pF
Coss Output Capacitance VDS=-20V - 70 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-1.2A, VGS=0V - - -1.2 V
trr Reverse Recovery Time2IS=-2A, VGS=0V, - 20 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 360 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2313GN-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
3
6
9
12
15
012345
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=25 oC
-5.0V
-4.5V
-3.5 V
-2.5V
VG= -1. 5V
0
3
6
9
12
15
012345
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA= 150 oC-5.0V
-4.5V
-3.5V
-2.5V
VG= -1. 5V
80
120
160
200
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (
Ω
)
ID=-2A
TA=25 oC
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID= -2.5 A
VG= -4.5V
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
1
2
3
0 0.2 0.4 0.6 0.8 1 1.2
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
AP2313GN-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS QGD
QG
Charge
0
2
4
6
8
02468
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID=-2 A
VDS =-16V
10
100
1000
1 5 9 13172125
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 360℃/W
tT
0.01
0.1
1
10
100
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TA=25oC
S
in
g
le Puls
e
1ms
10ms
100ms
1s
DC
