VCOS & PLOs - SMT
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MMIC VCO w/ BUFFER
AMPLIFIER, 2.75 - 3.0 GHz
v02.0805
General Description
Features
Functional Diagram
The HMC416LP4 & HMC416LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer ampli ers.
Covering 2.75 to 3.0 GHz, the VCO’s phase noise
performance is excellent over temperature, shock,
vibration and process due to the oscillator’s monolithic
structure. Power output is 4.5 dBm typical from a
single supply of 3V @ 37 mA. The voltage controlled
oscillator is packaged in a low cost leadless QFN 4 x 4
mm surface mount package.
Pout: +4.5 dBm
Phase Noise: -114 dBc/Hz @100 k Hz
No External Resonator Needed
Single Supply: 3V @ 37 mA
QFN Leadless SMT Package, 16 mm2
Typical Applications
Low noise MMIC VCO w/Buffer Ampli er for:
• Wireless Infrastructure
• Industrial Controls
• Test Equipment
• Military
Electrical Speci cations, TA = +25° C, Vcc = +3V
Parameter Min. Typ. Max. Units
Frequency Range 2.75 - 3.0 GHz
Power Output 1.5 4.5 dBm
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output -114 dBc/Hz
Tune Voltage (Vtune) 0 10 V
Supply Current (Icc) (Vcc = +3.0V) 37 mA
Tune Port Leakage Current 10 μA
Output Return Loss 9dB
Harmonics
2nd
3rd
-5
-16
dBc
dBc
Pulling (into a 2.0:1 VSWR) 3MHz pp
Pushing @ Vtune= +5V -1 MHz/V
Frequency Drift Rate 0.3 MHz/°C
HMC416LP4 / 416LP4E