TLP137
2007-10-01
1
TOSHIBA Photocoupler GaAs IRed & Photo−Transistor
TLP137
Office Machine
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP137 is a small outline coupler,
suitable for surface mount assembly.
TLP137 consists of a gallium arsenide infrared emitting diode, optically
coupled to a photo transistor, and provides high CTR at low input
current.
TLP137 base terminal is for the improvement of speed, reduction of dark
current, and enable operation.
z Collector−emitter voltage: 80V(min.)
z Current transfer ratio: 100%(min.)
Rank BV: 200%(min.)
z Isolation voltage: 3750Vrms(min.)
z UL recognized: UL1577, file No. E67349
z Current transfer ratio
Current Transfer Ratio (min.)
Ta = 25°C Ta =−25~75°C
Classi−
fication IF = 1mA
VCE = 0.5V
IF = 0.5mA
VCE = 1.5V
IF = 1mA
VCE = 0.5V
Marking
Of
Classi−
fication
Rank BV 200% 100% 100% BV
Standard 100% 50% 50% BV, Blank
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP137 (BV): TLP137
Pin Configurations (top view)
Unit in mm
TOSHIBA 11−4C2
Weight: 0.09 g
1 : Anode
3 : Cathode
4 : Emitter
5 : Collector
6 : Base
1
3
6
4
5
TLP137
2007-10-01
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 50 mA
Forward current derating (Ta ≥ 53°C) ΔIF / °C −0.7 mA / °C
Peak forward current (100μs pulse, 100pps) IFP 1 A
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Collector−emitter voltage VCEO 80 V
Collector−base voltage VCBO 80 V
Emitter−collector voltage VECO 7 V
Emitter−base voltage VEBO 7 V
Collector current IC 50 mA
Peak collector current (10ms pulse, 100pps) ICP 100 mA
Power dissipation PC 150 mW
Power dissipation derating (Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Operating temperature range Topr −55~100 °C
Lead soldering temperature (10s) Tsol 260 °C
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta ≥ 25°C) ΔPT / °C −2.0 mW / °C
Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) BVS 3750 V r m s
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted
together.
TLP137
2007-10-01
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF = 10mA 1.0 1.15 1.3 V
Reverse current IR VR = 5V ― ― 10 μA
LED
Capacitance CT V = 0, f = 1MHz ― 30 ― pF
Collector−emitter
breakdown voltage V(BR)CEO IC = 0.5mA 80 ― ― V
Emitter−collector
breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V
Collector−base breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V
Emitter−base breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V
VCE = 48V ― 10 100 nA
Collector dark current ICEO
VCE = 48V, Ta = 85°C ― 2 50 μA
Collector dark current ICER VCE = 48V, Ta = 85°C
RBE = 1MΩ ― 0.5 10 μA
Collector dark current ICBO V
CB = 10V ― 0.1 ― nA
DC forward current gain hFE V
CE = 5V, IC = 0.5mA ― 1000 ― ―
Detector
Capacitance (collector to emitter) CCE V= 0, f = 1MHz ― 12 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
100 ― 1200
Current transfer ratio IC / IF
IF = 1mA, VCE = 0.5V
Rank BV 200 ― 1200
%
50 ― ―
Low input CTR IC / IF(low)
IF = 0.5mA, VCE = 1.5V
Rank BV 100 ― ―
%
Base photo−current IPB I
F = 1mA, VCB = 5V ― 5 ― μA
IC = 0.5mA, IF = 1mA ― ― 0.4
― 0.2 ―
Collector-emitter
saturation voltage VCE(sat) IC = 1mA, IF = 1mA
Rank BV ― ― 0.4
V
Off−state collector current IC(off) V F = 0.7V, VCE = 48V ― ― 10 μA
TLP137
2007-10-01
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Coupled Electrical Characteristics (Ta = −25~75°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
50 ― ―
Current transfer ratio IC / IF
IF = 1mA, VCE = 0.5V
Rank BV 100 ― ―
%
― 50 ―
Low input CTR IC / IF(low)
IF = 0.5mA, VCE = 1.5V
Rank BV ― 100 ―
%
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance (input to output) CS VS = 0, f = 1MHz ― 0.8 ― pF
Isolation resistance RS V
= 500V 5×1010 1014 ― Ω
AC, 1minute 3750 ― ―
AC, 1second, in oil ― 10000 ―
Vrms
Isolation voltage BVS
DC, 1 minute, in oil ― 10000 ― Vdc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr ― 8 ―
Fall time tf ― 8 ―
Turn−on time ton ― 10 ―
Turn−off time toff
VCC = 10V, IC = 2mA
RL = 100Ω
― 8 ―
μs
Turn−on time tON ― 10 ―
Storage time tS ― 50 ―
Turn-off time tOFF
RL = 4.7 kΩ (Fig.1)
RBE = OPEN
VCC = 5 V, IF = 1.6mA ― 300 ―
μs
Turn−on time tON ― 12 ―
Storage time tS ― 30 ―
Turn-off time tOFF
RL = 4.7kΩ (Fig.1)
RBE = 470kΩ
VCC = 5 V, IF = 1.6mA ― 100 ―
μs
Fig. 1 Switching time test circuit
RBE
RL
IF VCC
VCE
VCC
VCE
IF
0.5V
4.5V
tOFF
tON
tS
TLP137
2007-10-01
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Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mw)
200
－20
0
160
120
80
40
0 40 80 100
120
60
20
Allowable forward current
I
F (mA)
120
100
－20
0
80
60
40
20
0 20
40 80 100
60
Ambient temperature Ta (°C)
IFP – DR
Duty cycle ratio DR
Pulse forward current
I
FP (mA)
3000
10
1000
500
300
100
50
30
10－3 3 10－2 3 10－1 3 100
PULSE WIDTH ≦ 100 μs
Ta = 25 ° C
3
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.1
0.6
50
30
10
5
3
1
0.5
0.3
0.8 1.0 1.2 1.4 1.6 1.8
Ta = 25 ° C
⊿ V
F / ⊿Ta － I
F
Forward current IF (mA)
Forward voltage temperature coefficient
⊿VF / ⊿Ta (m V / ﾟC)
－3.2
－0.4
0.1
－2.0
－1.6
－1.2
－0.8
0.5 1 3 5 10 30 50
－2.4
0.3
－2.8
IFP – VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
1
0.6
Pulse width ≦ 10 μs
Repetitive frequency
= 100 Hz
Ta = 25 ° C
1.0 2.2 2.6 3.0
500
300
100
50
30
10
5
3
1.4 1.8
IF
–
Ta PC
–
Ta
TLP137
2007-10-01
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IC – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
1.0
4
0
0
3
2
1
0.2 0.4 0.8 0.6
Ta = 25 ° C
IF = 1.0mA
0.8mA
0.6mA
0.5mA
0.4mA
0.2mA
IC / IF – IF
Forward current
I
F (mA)
Current transfer ratio IC / IF (%)
1000
30
0.1
500
300
100
50
0.3 0.5 1 3 5 10
Sample A
Sample B
Ta = 25 ° C
V
CE = 5V
V
CE = 1.5V
V
CE = 0.5V
IC – IF
Forward current
I
F (mA)
Collector current IC (mA)
50
0.03
0.1
10
5
3
0.5
0.3
0.1
0.3 0.5 1 3 5 10
Sample A
Sample B
Ta = 25 ° C
V
CE = 5V
V
CE = 1.5V
V
CE = 0.5V
30
1
0.05
IC – IF at RBE
Forward current IF (mA)
Collector current IC (mA)
10
30
0.1
0.1
3
1
0.5
0.3
0.5 1 5 3 10
5
0.3
RBE=∞ 500kΩ100kΩ50kΩ
RBE
IF
Ta=25 °C
VCE=5V
VCC
A
RBE
IC – VCE
Collector Current IC (mA)
Collector-emitter voltage VCE(V)
10
4
0
0
3
2
1
2 4 8 6
Ta = 25 ° C
IF = 1.0mA
0.8mA
0.6mA
0.5mA
0.4mA
0.2mA
IPB – IF
Forward current IF (mA)
Base photo current IPB (μA)
VCB=0V
VCB=5V
300
0.1
0.1 0.3 1 3 5 10
100
30
10
3
1
0.3
0.5
Ta=25 ° C
A
IFVCB
TLP137
2007-10-01
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VCE(sat) – Ta
Ambient temperature Ta (°C)
Collector -emitter saturation voltage
V
CE (sat) (V)
100
0.16
－40
0.04
0.14
0.10
0.06
－20 20 80
40
0.12
0.08
0
60
IF = 1mA
IC = 0.5mA
0
0.02
Load resistance RL (kΩ)
Switching time (μs)
300
5
1 3 10 30 50 100
100
50
30
10
5
3
1
Switching Time – RL
tOFF
tON
tS
Ta = 25 ° C
IF=1.6mA
VCC=5V
RBE=470kΩ
Collector dark current ID (ICEO) (μA)
Ambient temperature Ta (°C)
ICEO – Ta
120 0 20 40 80 60
101
100
10-1
10-4
10-3
10-2
100
24V
VCE=48V
5V
10V
IC – Ta
Collector current IC (mA)
Ambient temperature Ta (°C)
5
10
0.05
－20
1
0.5
0.3
0.1
3
30
VCE=1.5V
V
CE=0.5V
IF = 2mA
1mA
0.5mA
0.2mA
0 20 40 60 80 100
TLP137
2007-10-01
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Base-emitter resistance RBE (Ω)
Switching time (μs)
Switching Time – RBE
1000
5
100k 300k 1M 3M ∞
300
100
50
3
1
500
30
10
tOFF
tON
tS
N
Ta = 25 ° C
IF=1.6mA
VCC=5V
RL=4.7kΩ
Load resistance RL (kΩ)
Swithing time (μs)
Switching Time – RL
5000
30
1 3 10 50
100
1000
500
300
10
５
3000
100
50
30
5
tON
tS
N
tOFF
Ta = 25 ° C
IF=1.6mA
VCC=5V
TLP137
2007-10-01
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RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
