13PD100-TO
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
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The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a
TO-46 header, is the largest standard device enabling a 1GHz frequency cutoff. Planar semiconductor
design and dielectric passivation provide very low noise performance. Reliability is assured by hermetic
sealing and 100% purge burn-in (200°C, 15 hours, Vr = 20V). Headers are available with either a lensed or
flat window cap. Chips can also be attached and wire bonded to customer-supplied or other specified
packages.
High Speed InGaAs p-i-n Photodiode
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Frequency Response
Volts
nA
pF
A/W
ns
GHz
–20
2
0.5
0.5
1.15
0.9
1
0.8
–5V
–5V
1300nm
(–3dB)
Parameters Test Conditions Minimum
DEVICE CHARACTERISTICS
Typical Maximum Units
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
30 Volts
10mA
500µA
–40°C to +85°C
–40°C to +85°C
250°C
ABSOLUTE MAXIMUM RATINGS