Semiconductor Group 1 02/12/1996
BSP 300
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
•
V
GS(th)= 2.0... 4.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type
V
DS
I
D
R
DS(on) Package Marking
BSP 300 800 V 0.19 A 20 ΩSOT-223 BSP 300
Type Ordering Code Tape and Reel Information
BSP 300 Q67050 -T0009 E6433
BSP 300 Q67050-T0017 E6327
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
A = 25 °C
I
D 0.19 A
DC drain current, pulsed
T
A = 25 °C
I
Dpuls 0.76
Avalanche energy, single pulse
I
D = 0.8 A,
V
DD = 50 V,
R
GS = 25 Ω
L
= 105 mH,
T
j = 25 °C
E
AS
36
mJ
Gate source voltage
V
GS ± 20 V
Power dissipation
T
A = 25 °C
P
tot 1.8 W
Semiconductor Group 2 02/12/1996
BSP 300
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
T
j -55 ... + 150 °C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip to ambient air 1)
R
thJA ≤ 70 K/W
Thermal resistance, junction-soldering point 1)
R
thJS ≤ 14
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA,
T
j = 25 °C
V
(BR)DSS 800 - - V
Gate threshold voltage
V
GS=
V
DS,
I
D = 1 mA
V
GS(th) 2 3 4
Zero gate voltage drain current
V
DS = 800 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = 800 V,
V
GS = 0 V,
T
j = 125 °C
I
DSS
-
- 10
0.1 100
1 µA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS - 10 100 nA
Drain-Source on-state resistance
V
GS = 10 V,
I
D = 0.19 A
R
DS(on) - 15 20 Ω
Semiconductor Group 3 02/12/1996
BSP 300
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS≥ 2 *
I
D *
R
DS(on)max,
I
D = 0.19 A
g
fs 0.06 0.27 - S
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss - 170 230 pF
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss - 20 30
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
rss - 10 15
Turn-on delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.25 A
R
GS = 50 Ω
t
d(on)
- 7 11
ns
Rise time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.25 A
R
GS = 50 Ω
t
r
- 16 24
Turn-off delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.25 A
R
GS = 50 Ω
t
d(off)
- 27 36
Fall time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.25 A
R
GS = 50 Ω
t
f
- 21 28
Semiconductor Group 4 02/12/1996
BSP 300
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 °C
I
S- - 0.19 A
Inverse diode direct current,pulsed
T
A = 25 °C
I
SM - - 0.76
Inverse diode forward voltage
V
GS = 0 V,
I
F = 0.38 A,
T
j = 25 °C
V
SD - 1 1.4 V
Reverse recovery time
V
R = 30 V,
I
F=
l
S = 0 , d
i
F/d
t
= 100 A/µs
t
rr - 95 - ns
Reverse recovery charge
V
R = 30 V,
I
F=
l
S = 0 , d
i
F/d
t
= 100 A/µs
Q
rr - 0.25 - µC
Semiconductor Group 5 02/12/1996
BSP 300
Power dissipation
P
tot = ƒ(
T
A)
020 40 60 80 100 120 °C 160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
2.0
P
tot
Drain current
I
D = ƒ(
T
A)
parameter:
V
GS ≥ 10 V
020 40 60 80 100 120 °C 160
T
A
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
A
0.20
I
D
Safe operating area
I
D = ƒ(
V
DS)
parameter:
D
= 0.01
, T
C = 25°C
-3
10
-2
10
-1
10
0
10
A
I
D
10 0 10 1 10 2 10 3
V
V
DS
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
t
p = 760.0µs
Transient thermal impedance
Z
th JA = ƒ(
t
p)
parameter:
D = t
p /
T
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJC
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 6 02/12/1996
BSP 300
Typ. output characteristics
I
D = ƒ(
V
DS)
parameter:
t
p = 80 µs ,
T
j = 25 °C
04812 16 V 24
V
DS
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
A
0.45
I
D
V
GS [V]
a
a 4.0
b
b 4.5
cc 5.0
d
d 5.5
e
e 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
l
P
tot = 2W
l 20.0
Typ. drain-source on-resistance
R
DS (on) = ƒ(
I
D)
parameter:
t
p = 80 µs,
T
j = 25 °C
0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 A 0.34
I
D
0
5
10
15
20
25
30
35
40
45
50
55
Ω
65
R
DS (on)
V
GS [V] =
a
4.0
V
GS [V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics
I
D
= f
(
V
GS)
parameter:
t
p = 80 µs
V
DS≥ 2 x
I
D x
R
DS(on)max
012345678V10
V
GS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
A
1.0
I
D
Typ. forward transconductance
g
fs =
f
(
I
D)
parameter:
t
p = 80 µs,
V
DS≥2 x
I
D x
R
DS(on)max
0.0 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8
I
D
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
S
0.50
g
fs
7 02/12/1996
Semiconductor Group
BSP 300
Drain-source on-resistance
R
DS (on) = ƒ(
T
j)
parameter:
I
D = 0.19 A,
V
GS = 10 V
-60 -20 20 60 100 °C 160
T
j
0
5
10
15
20
25
30
35
40
Ω
50
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th) = ƒ(
T
j)
parameter:
V
GS =
V
DS,
I
D = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60 -20 20 60 100 °C 160
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS=0V,
f
= 1 MHz
0 5 10 15 20 25 30 V 40
V
DS
0
10
1
10
2
10
3
10
pF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F = ƒ(
V
SD)
parameter:
T
j
, t
p = 80 µs
-3
10
-2
10
-1
10
0
10
A
I
F
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
Semiconductor Group 8 02/12/1996
BSP 300
Avalanche energy
E
AS = ƒ(
T
j)
parameter:
I
D = 0.8 A,
V
DD = 50 V
R
GS = 25 Ω,
L
= 1 0 5 mH
20 40 60 80 100 120 °C 160
T
j
0
4
8
12
16
20
24
28
32
mJ
38
E
AS
Drain-source breakdown voltage
V
(BR)DSS = ƒ(
T
j)
-60 -20 20 60 100 °C 160
T
j
720
740
760
780
800
820
840
860
880
900
920
V
960
V
(BR)DSS
