1999-09-22
Page 1
BSP308
Preliminary data
SIPMOS Small-Signal-Transistor
Features
• N-Channel
• Enhancement mode
• Logic Level
• d
v
/d
t
rated
Product Summary
Drain source voltage V
V
DS 30
Drain-Source on-state resistance
R
DS(on) 0.05 Ω
Continuous drain current A
I
D4.7
VPS05163
123
4
Type Package Ordering Code
BSP308 SOT-223 Q67000-S4011
Pin 1 Pin 2/4 PIN 3
G D S
Maximum Ratings,at
T
j = 25 °C, unless otherwise specified
Parameter Symbol UnitValue
4.7
3.9
AContinuous drain current
T
A = 25 °C
T
A = 70 °C
I
D
Pulsed drain current
T
A = 25 °C
I
D puls 18.8
d
v
/d
t
6Reverse diode d
v
/d
t
I
S = 4.7 A,
V
DS = 20 V, d
i
/d
t
= 200 A/µs,
T
jmax = 150 °C
kV/µs
Gate source voltage
V
GS ±20 V
Power dissipation
T
A = 25 °C
P
tot 1.8 W
Operating and storage temperature
T
j ,
T
stg -55...+150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1999-09-22
Page 2
BSP308
Preliminary data
Thermal Characteristics
Parameter Symbol UnitValues
min. max.typ.
Characteristics
Thermal resistance, junction - soldering point 25 K/W-
R
thJS -
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
R
thJA
-
-
-
-
110
70
K/W
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 250 µA
V
(BR)DSS 30 - V-
Gate threshold voltage,
V
GS =
V
DS
I
D = 20 µA 1.2 1.6 2
V
GS(th)
Zero gate voltage drain current
V
DS = 30 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = 30 V,
V
GS = 0 V,
T
j = 125 °C
µA
1
100
I
DSS
0.1
10
-
-
I
GSS - 10 100Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V nA
Drain-Source on-state resistance
V
GS = 4.5 V,
I
D = 3.9 A
R
DS(on) - 0.05 0.075 Ω
Drain-Source on-state resistance
V
GS = 10 V,
I
D = 4.7
R
DS(on) - 0.03 0.05 Ω
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
1999-09-22
Page 3
BSP308
Preliminary data
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS≥2*
I
D*
R
DS(on)max ,
I
D = 3.9 A 6.1
g
fs S-8.8
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss 400 500 pF-
C
oss - 200160Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz 9070
C
rss -
Turn-on delay time
V
DD = 15 V,
V
GS = 4.5 V,
I
D = 3.9 A ,
R
G = 15 Ω
- 24 ns16
t
d(on)
Rise time
V
DD = 15 V,
V
GS = 4.5 V,
I
D = 3.9 A ,
R
G = 15 Ω
t
r- 4530
16 24
t
d(off)
Turn-off delay time
V
DD = 15 V,
V
GS = 4.5 V,
I
D = 3.9 A ,
R
G = 15 Ω
-
Fall time
V
DD = 15 V,
V
GS = 4.5 V,
I
D = 3.9 A ,
R
G = 15 Ω
t
f- 15 23
1999-09-22
Page 4
BSP308
Preliminary data
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
UnitValuesSymbolParameter
min. typ. max.
Dynamic Characteristics
Gate to source charge
V
DD = 24 V,
I
D = 4.7 A -
Q
gs nC2.91.9
Gate to drain charge
V
DD = 24 V,
I
D = 4.7 A
Q
gd 5.4 8.1-
22-
Q
g
Gate charge total
V
DD = 24 V,
I
D = 4.7 A,
V
GS = 0 to 10 V 14.5
Gate plateau voltage
V
DD = 24 V ,
I
D = 4.7 A
V
(plateau) - 3.1 - V
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 °C
I
S- - 4.7 A
Inverse diode direct current,pulsed
T
A = 25 °C
I
SM - - 18.8
Inverse diode forward voltage
V
GS = 0 V,
I
F = 4.7 A
V
SD - 0.84 1.1 V
Reverse recovery time
V
R = 15 V,
I
F=
I
S , d
i
F/d
t
= 100 A/µs
t
rr - 38.4 57.6 ns
Reverse recovery charge
V
R = 15 V,
I
F=
l
S , d
i
F/d
t
= 100 A/µs
Q
rr - 22.3 33.5 nC
1999-09-22
Page 5
BSP308
Preliminary data
Drain current
I
D =
f
(
T
A)
0 20 40 60 80 100 120 °C 160
TA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
A
5.5
BSP308
I
D
Power Dissipation
P
tot =
f
(TA)
0 20 40 60 80 100 120 °C 160
TA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
1.9
BSP308
P
tot
Transient thermal impedance
Z
thJA =
f
(tp)
parameter :
D =
t
p/
T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP308
Z
thJA
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D =
f
(
V
DS )
parameter :
D
= 0 ,
T
A = 25 °C
10 -1 10 0 10 1 10 2
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
BSP308
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
t
p = 160.0µs
1999-09-22
Page 6
BSP308
Preliminary data
Typ. drain-source-on-resistance
R
DS(on) =
f
(
I
D)
parameter:
V
GS
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 A8.5
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
Ω
0.16
BSP308
R
DS(on)
b
V
GS [V] =
b
2.5
c
c
3.0
d
d
3.5
e
e
4.0
f
f
4.5
g
g
5.0
h
h
5.5
i
i
6.0
j
j
7.0
k
k
8.0
l
l
10.0
Typ. output characteristics
I
D =
f
(
V
DS)
parameter:
t
p = 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
V
DS
0
1
2
3
4
5
6
7
8
9
10
A
12
BSP308
I
D
V
GS [V]
a
a 2.0
b
b 2.5
c
c 3.0
d
d 3.5
e
e 4.0
f
f 4.5
g
g 5.0
h
h 5.5
i
i 6.0
j
j 7.0
k
k 8.0
l
P
tot = 1.80W
l 10.0
Typ. transfer characteristics
I
D=
f
(
V
GS )
V
DS≥ 2 x
I
D x
R
DS(on)max
parameter:
t
p = 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
V
GS
0
1
2
3
4
5
6
7
8
A
10
I
D
Typ. forward transconductance
g
fs = f(
I
D);
T
j=25°C
parameter:
g
fs
01234567A9
I
D
0
1
2
3
4
5
6
7
8
9
10
S
12
g
fs
1999-09-22
Page 7
BSP308
Preliminary data
Drain-source on-resistance
R
DS(on) =
f
(
T
j)
parameter :
I
D = 4.7 ,
V
GS = 10 V
-60 -20 20 60 100 °C 180
T
j
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
Ω
0.12
BSP308
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th) =
f
(
T
j)
parameter:
V
GS =
V
DS,
I
D = 20 µA
-60 -20 20 60 100 °C 180
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
98%
-60 -20 20 60 100 °C 180
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
typ
-60 -20 20 60 100 °C 180
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
2%
-60 -20 20 60 100 °C 180
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
Typ. capacitances
C = f(VDS)
parameter:
V
GS=0 V,
f
=1 MHz
0 5 10 15 20 25 30 V40
VDS
1
10
2
10
3
10
pF
C
Ciss
Coss
Crss
Forward characteristics of reverse diode
I
F =
f
(VSD)
parameter:
T
j , tp = 80 µs
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
V
SD
-1
10
0
10
1
10
2
10
A
BSP308
I
F
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
1999-09-22
Page 8
BSP308
Preliminary data
Typ. gate charge
V
GS =
f
(
Q
Gate)
parameter:
I
D = 4.7 A pulsed
0 2 4 6 8 10 12 14 16 18nC 21
Q
Gate
0
2
4
6
8
10
12
V
16
BSP308
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS = f
(
T
j)
-60 -20 20 60 100 °C 180
T
j
27
28
29
30
31
32
33
34
35
V
37
BSP308
V
(BR)DSS
1999-09-22
Page 9
BSP308
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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