FDV301N
Digital FET , N-Channel
General Description Features
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter FDV301NUnits
VDSS, VCC Drain-Source Voltage, Power Supply Voltage 25 V
VGSS, VIGate-Source Voltage, VIN 8V
ID, IO Drain/Output Current - Continuous 0.22 A
0.5
PDMaximum Power Dissipation 0.35 W
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
ESD Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm) 6.0 kV
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W
25 V, 0.22 A continuous, 0.5 A Peak.
RDS(ON) = 5 Ω @ VGS= 2.7 V
RDS(ON) = 4 Ω @ VGS= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.06V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors with one DMOS
FET.
This N-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one N-channel FET can
replace several different digital transistors, with different bias
resistor values.
Mark:301
SOT-23 SuperSOTTM-8 SOIC-16
SO-8 SOT-223
SuperSOTTM-6
D
GS
D
SG
IN
GND
Vcc
INVERTER APPLICATION
OUT
June 2009
FDV301N Rev.F1
©2009 Fairchild Semiconductor Corporation
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Inverter Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
IO (off) Zero Input Voltage Output Current VCC = 20 V, VI = 0 V 1µA
VI (off) Input Voltage VCC = 5 V, IO = 10 µA0.5 V
VI (on) VO = 0.3 V, IO = 0.005 A 1V
RO (on) Output to Ground Resistance VI = 2.7 V, IO = 0.2 A4 5 Ω
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 25 V
∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C25 mV / oC
IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1µA
TJ = 55°C 10 µA
IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V 100 nA
ON CHARACTERISTICS (Note)
∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C-2.1 mV / oC
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA0.70 0.85 1.06 V
RDS(ON) Static Drain-Source On-Resistance VGS = 2.7 V, ID = 0.2 A 3.8 5Ω
TJ =125°C 6.3 9
VGS = 4.5 V, ID = 0.4 A 3.1 4
ID(ON) On-State Drain Current VGS = 2.7 V, VDS = 5 V 0.2 A
gFS Forward Transconductance VDS = 5 V, ID= 0.4 A 0.2 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 10 V, VGS = 0 V,
f = 1.0 MHz 9.5 pF
Coss Output Capacitance 6 pF
Crss Reverse Transfer Capacitance 1.3 pF
SWITCHING CHARACTERISTICS (Note)
tD(on)Turn - On Delay Time VDD = 6 V, ID = 0.5 A,
VGS = 4.5 V, RGEN = 50 Ω3.2 8ns
trTurn - On Rise Time 6 15 ns
tD(off) Turn - Off Delay Time 3.5 8ns
tfTurn - Off Fall Time 3.5 8ns
QgTotal Gate Charge VDS = 5 V, ID = 0.2 A,
VGS = 4.5 V 0.49 0.7 nC
Qgs Gate-Source Charge 0.22 nC
Qgd Gate-Drain Charge 0.07 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current 0.29 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.29 A (Note)0.8 1.2 V
Note:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDV301N Rev.F1
http://store.iiic.cc/
0 0.5 1 1.5 2 2.5 3
0
0.1
0.2
0.3
0.4
0.5
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
3.5
2.7
2.5
V = 4.5V
GS 4.0
2.0
1.5
DS
D
3.0
0 0.1 0.2 0.3 0.4 0.5
0.6
0.8
1
1.2
1.4
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 2.0V
GS
2.7
3.0
4.04.5
D
3.5
2.5
R DS(on ), NORMALIZED
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 2.7 V
GS
I = 0.2A
D
R , NORMALIZED
DS(ON)
Figure 3. On-Resistance Variation
with Temperature.
0.5 1 1.5 2 2.5
0
0.05
0.1
0.15
0.2
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25°C
125°C
V = 5.0V
DS
GS
D
T = -55°C
J
Figure 5. Transfer Characteristics.
0.2 0.4 0.6 0.8 11.2
0.0001
0.001
0.01
0.1
0.2
0.5
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C
-55°C
V = 0V
GS
SD
S
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature.
Figure 4. On Resistance Variation with
Gate-To-Source Voltage.
22.5 33.5 4
0
3
6
9
12
15
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(on)
125°C
25°C
I = 0.2A
D
FDV301N Rev.F1
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FDV301N Rev.F1
00.1 0.2 0.3 0.4 0.5 0.6
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 0.2A
D
15V
V = 5V
DS 10V
0.5 1 2 5 10 15 25 35
0.01
0.02
0.05
0.1
0.2
0.5
1
V , DRAI N-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
DC
1s
100ms
10s
1ms
RDS(ON) LIMIT
V = 2.7V
SINGLE PULSE
R = 357 °C/W
T = 25°C
GS
A
θJA
0.001 0.01 0.1 1 10 100 300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =357° C/W
T = 25°C
θJA
A
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 11. Transient Thermal Response Curve.
0.1 0.5 1 2 5 10 25
1
2
3
5
10
20
30
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical And Thermal Characteristics
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = 357 °C/W
θJA
θJA
θJA
T - T = P * R (t)
θJAA
J
P(pk)
t
1 t
2
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
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®
©2009 Fairchild Semiconductor Corporation
FDV301N Rev.F1 3
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intended to be an exh austive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchil d Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™*
Fairchild®
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FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
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F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
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ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
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MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
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Advance Information Formative / In Design Data sheet contains the design specif ications for product development. Specifications
may change in any manner with out notice.
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date. Fairchild Semiconduct or reserves the right to make changes at any ti me without
notice to improve design.
No Identification Neede d Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to impr ove the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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