GLZ Series Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 3.3 to 39V Power Dissipation 500mW MiniMELF (SOD-80C) Mounting Pad Layout 0.098(2.50) MAX Cathode Mark 0.049(1.25) MIN 0.063 (1.6) 0.055 (1.4) 0.142 (3.6) 0.134 (3.4) 0.079(2.00) MIN 0.019 (0.48) 0.011 (0.28) 0.197(5.00) REF Dimensions in inches and (millimeters) Mechanical Data Features Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g Packaging codes/options: D1/10K per 13" reel (8mm tape), 20K/box D2/2.5K per 7" reel (8mm tape), 20K/box * Silicon Planar Zener Diodes * In MiniMELF case especially for automatic insertion * The Zener voltages are graded according to voltage bands instead of by tolerance. * Low Zener impedance and low leakage current * Popular in Asian designs Maximum Ratings and Thermal Characteristics (T A Parameter = 25C unless otherwise noted) Symbol Value Unit PD 500(1) mW Zener Current see Table "Characteristics" Power Dissipation (see fig. 1) Thermal Resistance Junction to Ambient Air RJA (1) 300 C/W Junction temperature Tj 175 C Storage temperature range TS -55 to +175 C Note: (1) Valid provided that electrodes are kept at ambient temperature. Document Number 88334 06-May-02 www.vishay.com 1 GLZ Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TA = 25C unless otherwise noted) Dynamic Resistance (3) Zener Voltage VZ (V) at IZT Type Rank ZZ () at IZT Reverse Leakage Current ZZK () at IZK IR (A) Min Max IZT (mA) Max IZ (mA) Max IZK (mA) Max. VR (V) GLZ3.3 A B 3.160 3.320 3.380 3.530 20 70 20 1000 1 20 1.0 GLZ3.6 A B 3.455 3.600 3.695 3.845 20 60 20 1000 1 10 1.0 GLZ3.9 A B 3.74 3.89 4.01 4.16 20 50 20 1000 1 5 1.0 GLZ4.3 A B C 4.04 4.17 4.30 4.29 4.43 4.57 20 40 20 1000 1 5 1.0 GLZ4.7 A B C 4.44 4.55 4.68 4.68 4.80 4.93 20 25 20 900 1 5 1.0 GLZ5.1 A B C 4.81 4.94 5.09 5.07 5.20 5.37 20 20 20 800 1 5 1.5 GLZ5.6 A B C 5.28 5.45 5.61 5.55 5.73 5.91 20 13 20 500 1 5 2.5 GLZ6.2 A B C 5.78 5.96 6.12 6.09 6.27 6.44 20 10 20 300 1 5 3.0 GLZ6.8 A B C 6.29 6.49 6.66 6.63 6.83 7.01 20 8 20 150 0.5 2 3.5 GLZ7.5 A B C 6.85 7.07 7.29 7.22 7.45 7.67 20 8 20 120 0.5 0.5 4.0 GLZ8.2 A B C 7.53 7.78 8.03 7.92 8.19 8.45 20 8 20 120 0.5 0.5 5.0 GLZ9.1 A B C 8.29 8.57 8.83 8.73 9.01 9.30 20 8 20 120 0.5 0.5 6.0 GLZ10 A B C D 9.12 9.41 9.70 9.94 9.59 9.90 10.20 10.44 20 8 20 120 0.5 0.2 7.0 GLZ11 A B C 10.18 10.50 10.82 10.71 11.05 11.38 10 10 10 120 0.5 0.2 8.0 GLZ12 A B C 11.13 11.44 11.74 11.71 12.03 12.35 10 12 10 110 0.5 0.2 9.0 www.vishay.com 2 Document Number 88334 06-May-02 GLZ Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TA = 25C unless otherwise noted) Dynamic Resistance (3) Zener Voltage VZ (V) at IZT Type Rank ZZ () at IZT Reverse Leakage Current ZZK () at IZK IR (A) Min Max IZT (mA) Max IZ (mA) Max IZK (mA) Max. VR (V) GLZ13 A B C 12.11 12.55 12.99 12.75 13.21 13.66 10 14 10 110 0.5 0.2 10 GLZ15 A B C 13.44 13.89 14.35 14.13 14.62 15.09 10 16 10 110 0.5 0.2 11 GLZ16 A B C 14.80 15.25 15.69 15.57 16.04 16.51 10 18 10 150 0.5 0.2 12 GLZ18 A B C 16.22 16.82 17.42 17.06 17.70 18.33 10 23 10 150 0.5 0.2 13 GLZ20 A B C D 18.02 18.63 19.23 19.72 18.96 19.59 20.22 20.72 10 28 10 200 0.5 0.2 15 GLZ22 A B C D 20.15 20.64 21.08 21.52 21.20 21.71 22.17 22.63 5 30 5 200 0.5 0.2 17 GLZ24 A B C D 22.05 22.61 23.12 23.63 23.18 23.77 24.31 24.85 5 35 5 200 0.5 0.2 19 GLZ27 A B C D 24.26 24.97 25.63 26.29 25.52 26.26 26.95 27.64 5 45 5 250 0.5 0.2 21 GLZ30 A B C D 26.99 27.70 28.36 29.02 28.39 29.13 29.82 30.51 5 55 5 250 0.5 0.2 23 GLZ33 A B C D 29.68 30.32 30.90 31.49 31.22 31.88 32.50 33.11 5 65 5 250 0.5 0.2 25 GLZ36 A B C D 32.14 32.79 33.40 34.01 33.79 34.49 35.13 35.77 5 75 5 250 0.5 0.2 27 GLZ39 A B C D 34.68 35.36 36.00 36.63 36.47 37.19 37.85 38.52 5 85 5 250 0.5 0.2 30 Notes: (1) The Zener voltage is measured 40ms after power is supplied. (2) Specify Zener voltage rank (A, B, C, or D) when ordering parts (3) Dynamic Zener resistance is measured with f = 1kHz Document Number 88334 06-May-02 www.vishay.com 3 GLZ Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Power Derating Curve Ptot -- Power Dissipation (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 200 TA -- Ambient Temperature (C) Fig. 2 - Typical Breakdown Characteristics 100 3.6 20 10 5 39 36 33 30 27 24 22 20 18 16 15 13 12 9.1 10 11 2 3.9 4.3 4.7 5.1 0.5 0 2 4 6.2 6.8 7.5 8.2 1 5.6 IZ -- Zener Current (mA) 50 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 VZ -- Zener Voltage (V) Fig. 4 - Typical Forward Characteristics Fig. 3 - Typical RZ vs. IZ 100 IF -- Forward Current (mA) 1000 IZ (mA) GLZ3V6B 10 GLZ39B 1 GLZ30A GLZ20B GLZ8V2B 0.1 0 50 100 RZ () www.vishay.com 4 150 200 100 10 1 0.1 600 700 800 900 1000 VF -- Forward Voltage (mV) Document Number 88334 06-May-02