AT-42000
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip
Data Sheet
CAUTION: It is advised that normal static precautions be taken in handling and assembly
of this component to prevent damage and/or degradation which may be induced by ESD.
Description
Avago’s AT-42000 is a general purpose NPN bipolar transis-
tor chip that oers excellent high frequency performance.
The 4 micron emitter-to-emitter pitch enables this transis-
tor to be used in many dierent functions. The 20 emit-
ter nger interdigitated geometry yields a medium sized
transistor with impedances that are easy to match for low
noise and medium power applications.
This device is designed for use in low noise, wideband am-
plier, mixer and oscillator applications in the VHF, UHF,
and microwave frequencies. An optimum noise match
near 50W up to 1 GHz , makes this device easy to use as a
low noise amplier.
The AT-42000 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by
the use of ionimplantation, self-alignment techniques,
and gold metalization in the fabrication of this device.
The recommended assembly procedure is gold-eutectic
die attach at 400oC and either wedge or ball bonding us-
ing 0.7 mil gold wire. See APPLICATIONS section, “Chip
Use”.
Features
• High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB
Compression:
15.0 dB Typical G1 dB at 2.0 GHz
10.0 dB Typical G1 dB at 4.0 GHz
• Low Noise Figure: 1.9 dB
Typical NFO at 2.0 GHz
• High Gain-Bandwidth
Product: 9.0 GHz Typical fT
Chip Outline
2
AT-42000 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum [1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 20
VCEO Collector-Emitter Voltage V 12
ICCollector Current mA 80
PTPower Dissipation [2,3] mW 600
TjJunction Temperature °C 200
TSTG Storage Temperature °C -65 to 200
Thermal Resistanc e[2,4] :
θjc = 70°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface = 25°C.
3. Derate at 14.3 mW/°C for
TMounting Surface > 158°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section
ÒThermal ResistanceÓ for more
information.
Part Number Ordering Information
Part Number Devices Per Tray
AT-42000-GP4 100
Electrical Specifications, TA = 25 °C
Symbol Parameters and Test Conditions [1] Units Min. Typ. Max.
|S21E|2Insertion Power Gain; VCE = 8 V, I
C = 35 mA f = 2.0 GHz dB 11.5
f = 4.0 GHz 5.5
P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 21.0
VCE = 8 V, I
C = 35 mA f= 4.0 GHz 20.5
G1 dB 1 dB Compressed Gain; VCE = 8 V, I
C = 35 mA f = 2.0 GHz dB 15.0
f = 4.0 GHz 10.0
NFOOptimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 1.9
f = 4.0 GHz 3.0
GAGain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 14.0
f = 4.0 GHz 10.5
fTGain Bandwidth Product: VCE = 8 V, I
C = 35 mA GHz 9.0
hFE Forward Current Transfer Ratio; VCE = 8 V, I
C = 35 mA Ñ 30 150 270
ICBO Collector Cutoff Current; VCB = 8 V mA 0.2
IEBO Emitter Cutoff Current; V EB = 1 V mA 2.0
CCB Collector Base Capacitance
[2]: VCB = 8 V, f = 1 MHz pF 0.23
Notes:
1.
RF performance is determined by packaging and testing 10 devices per wafer.
2. For this test, the emitter is grounded.
3
AT-42000 Typical Performance, TA = 25 °C
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
= 8 V, I
C
= 35 mA.
GAIN (dB)
0.1 0.50.3 1.0 3.0 6.0
I
C
(mA)
Figure 1. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V
CE
= 8 V.
24
20
16
12
8
4
G
1 dB
(dB) P
1 dB
(dBm)
0 10 20 30 40 50
P1dB
G1dB
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S21E|2
I
C
(mA)
Figure 3. Insertion Power Gain vs.
Collector Current and Frequency.
V
CE
= 8 V.
20
16
12
8
4
0
|S
21E
|
2
GAIN (dB)
0 10 20 30 40 50
1.0 GHz
2.0 GHz
4.0 GHz
I
C
(mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Voltage. f = 2.0 GHz.
10 V
4 V
6 V
4 V
10 V
6 V
24
20
16
12
16
14
12
10
G
1 dB
(dB) P
1 dB
(dBm)
0 10 20 30 40 50
P1dB
G1dB
FREQUENCY (GHz)
Figure 6. Noise Figure and Associated
Gain vs. Frequency.
V
CE
= 8 V, I
C
= 10 mA.
GAIN (dB)
24
21
18
15
12
9
6
3
0
4
3
2
1
0
NF
O
(dB)
0.5 2.01.0 3.0 4.0 5.0
GA
NFO
I
C
(mA)
Figure 4. Insertion Power Gain vs.
Collector Current and Voltage.
f = 2.0 GHz.
13
12
11
10
9
8
7
|S
21E
|
2
GAIN (dB)
0 10 20 30 40 50
10 V
6 V
4 V
4
AT-42000 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA= 25°C, V
CE = 8 V, IC= 10 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .70 -50 28.0 25.19 155 -37.7 .013 71 .92 -14
0.5 .67 -136 20.9 11.04 108 -30.5 .030 43 .57 -27
1.0 .66 -166 15.7 6.08 90 -28.9 .036 47 .50 -24
1.5 .66 -173 12.1 4.02 86 -28.2 .039 52 .48 -23
2.0 .66 179 9.8 3.09 82 -27.5 .042 57 .47 -23
2.5 .67 170 7.8 2.46 74 -26.0 .050 66 .47 -23
3.0 .67 165 6.3 2.08 68 -24.7 .058 72 .47 -26
3.5 .70 157 5.1 1.80 61 -23.4 .068 77 .47 -28
4.0 .70 151 3.9 1.56 57 -21.8 .081 82 .48 -30
4.5 .71 145 2.9 1.40 51 -20.7 .092 86 .50 -34
5.0 .73 138 1.9 1.24 41 -19.3 .109 87 .51 -38
5.5 .74 132 1.2 1.15 36 -17.2 .138 88 .51 -50
6.0 .76 129 0.2 1.02 32 -16.3 .154 87 .53 -56
AT-42000 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA= 25°C, V
CE = 8 V, IC= 35 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .49 -96 33.0 44.61 143 -40.9 .009 65 .79 -24
0.5 .62 -163 22.8 13.87 98 -34.4 .019 58 .42 -26
1.0 .63 179 17.2 7.25 86 -30.5 .030 70 .38 -22
1.5 .63 171 13.5 4.74 78 -27.7 .041 76 .38 -23
2.0 .65 163 11.2 3.62 72 -25.4 .054 79 .38 -25
2.5 .65 159 9.3 2.90 67 -23.6 .066 82 .38 -27
3.0 .68 154 7.8 2.44 60 -22.1 .079 82 .38 -29
3.5 .67 148 6.5 2.12 57 -20.6 .093 84 .39 -32
4.0 .69 144 5.3 1.83 51 -19.7 .104 86 .40 -34
4.5 .70 139 4.4 1.65 47 -18.3 .121 86 .41 -40
5.0 .70 137 3.3 1.46 43 -17.5 .133 85 .42 -44
5.5 .72 131 2.7 1.36 38 -16.5 .149 86 .41 -48
6.0 .74 128 1.7 1.22 34 -15.7 .164 85 .44 -55
A model for this device is available in the DEVICE MODELS section.
AT-42000 Noise Parameters: VCE = 8 V, I
C = 10 mA
Freq. NF OG
opt
GHz dB Mag Ang RN/50
0.1 1.0 .04 13 0.13
0.5 1.1 .05 69 0.13
1.0 1.5 .09 127 0.12
2.0 1.9 .23 171 0.11
4.0 3.0 .47 -154 0.14
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2008 Avago Technologies Limited. All rights reserved. Obsoletes 5965-8909E
AV02-1002EN - January 16, 2008
305 µ m
12 mil
30 µ m
1.18 mil
305 µ m
12 mil
Emitter Pad
Base Pad
DIA
90 µ m
3.54 mil
Note: Die thickness is 5 to 6 mil.
AT-42000 Chip Dimensions