BAS70TW/ADW/CDW/SDW
SURFACE MOUNT SCHOTTKY DIODE ARRAYS
1
2
3
4
5
6
1
2
3
4
5
6
FEATURES
APPLICATIONS
MAXIMUM RATINGS (Per Diode)
Rating Symbol Value Units
These devices feature electrically-isolated Schottky diodes connected
in various configurations housed in a very small SOT-363 (SC70-6L)
Maximum forward voltage @ 1.0mA of 0.41V
In compliance with EU RoHS 2002/95/EC directives
Maximum leakage current @ 50V of 100nA
Reverse voltage rating of 70V
Rail-to-rail ESD protection
Overshoot and undershoot switching control
Mobile phones and accessories
Video game consoles connector ports
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Non-repetitive Peak Forward Current, t = 1sec, Square Wave
Total Power Dissipation (Note 1)
Operating Junction Temperature Range
Storage Temperature Range8
9/1/2009Page 1 www.panjit.com
70 V
V70
mA200
A0.6
225 mW
°C-55 to +125
°C-55 to +125
V
V
I
I
P
T
T
RRM
R
F
FSM
tot
stg
T = 25°C Unless otherwise noted
J
J
Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in.
SOT- 363
THERMAL CHARACTERISTICS
Characteristic Symbol Units
thja
Thermal Resistance, Junction to Ambient 556
Value
R°C/W
Marking Code: 70A
Various
Configurations
(See Diagrams
Below)
Marking Code: 70T Marking Code: 70C Marking Code: 70S
BAS70TW BAS70ADW BAS70CDW BAS70SDW
123
654
123
654
Isolated Triple
123
654
123
654
123
654
123
654
Isolated Triple
123
654
123
654
123
654
123
654
Common Cathode
123
654
123
654
123
654
123
654
Common Anode
123
654
12
3
654
123
654
12
3
654
Series
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ELECTRICAL CHARACTERISTICS (Per Diode)
Parameter Symbol Min Units
Breakdown Voltage (Note 1)
Tj = 25°C Unless otherwise noted
Conditions Typ Max
VBR BR
I =
Forward Voltage (Note 1) VF
I =
I =
F
F
Reverse Leakage Current (Note 1) IRR
V =
Junction Capacitance CD0Vdc Bias, f =1 MHz
Reverse Recovery Time
(See Figure 1) trr
I = 10mA, I = 10mA
R = 100 Ohms;
measured at I = 1mA
FR
L
100 uA
1.0 mA
10 mA
50 V
70 - - V
- - 0.41
- - 0.75 V
- 100 nA-
2.0 pF- 1.25
-5ns-
BAS70TW/ADW/CDW/SDW
+10 V
50 ΩOutput
Pulse
Generator
50 ΩIn p u t
Sampling
O scilloscope
DUT
?
820 Ω
2.0 kΩ0.1 µF
IF
100 µH
0.1 µF
+10 V
50 ΩOutput
Pulse
Generator
50 ΩIn p u t
Sampling
O scilloscope
DUT
?
820 Ω
2.0 kΩ0.1 µF
IF
100 µH
0.1 µF
Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (I
F
) to 10mA
2. Input pulse is adjusted to I
R(peak)
is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
Note 1: Short duration (<300us) test pulse to minimize self heating
Rrec
I =
F
15 mA 1.0--
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BAS70TW/ADW/CDW/SDW
TYPICAL CHARACTERISTIC CURVES (Per Diode)
00.2 0.4 0.6 0.8 1.0
100
10
1
0.1
Forward Voltage,V (V)F
Forward Voltage,V (V)F
Forward Current,I (mA)
F
Forward Current,I (mA)
F
020 40 60 80
100
10
1
0.1
0.01
0.001
Reverse Voltage,V (V)R
Reverse Voltage,V (V)R
Reverse Current,I ( A)
R
m
Reverse Current,I ( A)
R
m
010 20 30 40 50 60
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Reverse Voltage,V (V)R
Reverse Voltage,V (V)R
Capacitance,C(pF)
Fig.2 Typical Forward Characteristics
Fig.2 Typical Forward Characteristics
Fig.3 Typical Reverse Characteristics
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Reverse Characteristics
Fig.4 Typical Reverse Characteristics
T =125 CJo
T =125 CJo
T=75CJo
T=75CJo
T=25CJo
T=25CJo
T =-40 CJo
9/1/2009
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ORDERING INFORMATION
BAS70xxx T/R7 - 7" reel, 3K units per reel
BAS70xxx T/R13 - 13" reel, 10K units per reel
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
BAS70TW/ADW/CDW/SDW
9/1/2009
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