2001. 6. 9 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS114
SILICON EPITAXIAL PLANAR DIODE
Revision No : 2
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
ᴌSmall Package.
ᴌSmall Total Capacitance : CT=1.2pF(Max.).
ᴌLow Series Resistance : rS=0.5ή(Typ.).
MAXIMUM RATING (Ta=25ᴱ)
USC
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
2.50 0.1
1.25 0.05
0.90 0.05
0.30+0.06/-0.04
1.70 0.05
MIN 0.17
0.126 0.03
0~0.1
0.15 0.05
0.4 0.05
2 +4/-2
L
M4~6
I1.0 MAX
CATHODE MARK
MM
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage VR30 V
Forward Current IF100 mA
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage VFIF=2mA - - 0.85 V
Reverse Current IRVR=15V - - 0.1 ỌA
Reverse Voltage VRIR=1ỌA30 - - V
Total Capacitance CTVR=6V, f=1MHz -0.7 1.2 pF
Series Resistance rsIF=2mA, f=100MHz -0.5 0.9 ή
Type Name
Marking
DU
2001. 6. 9 2/2
KDS114
Revision No : 2
I - V
FF
F
FORWARD VOLTAGE V (V)
0
10
F
FORWARD CURRENT I (A)
TOTAL CAPACITANCE C (pF)
T
0.3
1031
REVERSE VOLTAGE V (V)
R
RT
C - V
FORWARD CURRENT I (mA)
SF
SERIES RESISTANCE r (Ω)
13
0.1
S
3010
F
r - I
100
0.3
0.5
1
3Ta=25 C
f=100MHz
30 100550
0.5
1
3
5
10 Ta=25 C
f=100MHz
0.4 0.8 1.2 1.6 2.0 2.4 2.8
-4
10-3
10-2
10-1
Ta=25 C
