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April 1st, 2010
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Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DESCRIPTION
The
µ
PD75P3018A replaces the
µ
PD753017A’s internal mask ROM with a one-time PROM, and features expanded
ROM capacity. The
µ
PD75P3018A inherits the function of the
µ
PD75P3018, and enables high-speed operation at
a low supply voltage of 1.8 V.
Because the
µ
PD75P3018A supports programming by users, it is suitable for use in evaluation of systems in
development stages using the
µ
PD753012A, 753016A, or 753017A, and for use in small-scale production.
The following document describes further details of the functions. Please make sure to read this document
before starting design.
µ
PD753017 User’s Manual : U11282E
FEATURES
Compatible with
µ
PD753017A
Memory capacity:
• PROM : 32768 × 8 bits
• RAM : 1024 × 4 bits
Can operate in the same power supply voltage as the mask version
µ
PD753017A
• VDD = 1.8 to 5.5 V
LCD controller/driver
ORDERING INFORMATION
Part Number Package
µ
PD75P3018AGC-3B9 80-pin plastic QFP (14 × 14 mm, resin thickness 2.7 mm)
µ
PD75P3018AGC-3B9-A 80-pin plastic QFP (14 × 14 mm, resin thickness 2.7 mm)
µ
PD75P3018AGC-8BT 80-pin plastic QFP (14 × 14 mm, resin thickness 1.4 mm)
µ
PD75P3018AGC-8BT-A 80-pin plastic QFP (14 × 14 mm, resin thickness 1.4 mm)
µ
PD75P3018AGK-BE9 80-pin plastic TQFP (fine pitch) (12 × 12 mm, resin thickness 1.05 mm)
µ
PD75P3018AGK-9EU 80-pin plastic TQFP (fine pitch) (12 × 12 mm, resin thickness 1.00 mm)
µ
PD75P3018AGK-9EU-A 80-pin plastic TQFP (fine pitch) (12 × 12 mm, resin thickness 1.00 mm)
Caution Mask-option pull-up resistors are not provided in this device.
Remark Products with "-A" at the end of the part number are lead-free products.
µ
PD75P3018A
MOS INTEGRATED CIRCUIT
4-BIT SINGLE-CHIP MICROCONTROLLER
The mark shows major revised points.
Document No. U11917EJ2V1DS00 (2nd edition)
Date Published August 2005 N CP (K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
µ
PD75P3018A
2Data Sheet U11917EJ2V1DS
FUNCTION OUTLINE
Item Function
Instruction execution time • 0.95, 1.91, 3.81, 15.3
µ
s (main system clock: at 4.19 MHz operation)
• 0.67, 1.33, 2.67, 10.7
µ
s (main system clock: at 6.0 MHz operation)
• 122
µ
s (subsystem clock: at 32.768 kHz operation)
Internal memory PROM 32768 × 8 bits
RAM 1024 × 4 bits
General-purpose register • 4-bit operation: 8 × 4 banks
• 8-bit operation: 4 × 4 banks
Input/output port CMOS input 8 On-chip pull-up resistor connection can be specified by using software: 23
CMOS input/output 16
CMOS output 8 Also used for segment pins
N-ch open-drain input/output
813 V breakdown voltage
Total 40
LCD controller/driver • Segment number selection : 24/28/32 segments (can be changed to CMOS
output port in unit of 4; max. 8)
• Display mode selection : Static, 1/2 duty (1/2 bias), 1/3 duty (1/2 bias)
1/3 duty (1/3 bias), 1/4 duty (1/3 bias)
Timer 5 channels:
• 8-bit timer/event counter: 3 channels (can be used for 16-bit timer/event counter,
carrier generator, timer with gate)
• Basic interval timer/watchdog timer: 1 channel
• Watch timer: 1 channel
Serial interface • 3-wire serial I/O mode ... MSB or LSB can be selected for transferring first bit
• 2-wire serial I/O mode
• SBI mode
Bit sequential buffer (BSB) 16 bits
Clock output (PCL) Φ, 524, 262, 65.5 kHz (main system clock: at 4.19 MHz operation)
Φ, 750, 375, 93.8 kHz (main system clock: at 6.0 MHz operation)
Buzzer output (BUZ) • 2, 4, 32 kHz (main system clock: at 4.19 MHz operation
or subsystem clock: at 32.768 kHz operation)
• 2.93, 5.86, 46.9 kHz (main system clock: at 6.0 MHz operation)
Vectored interrupt • External : 3
• Internal : 5
Test input • External : 1
• Internal : 1
System clock oscillator • Ceramic or crystal oscillator for main system clock oscillation
• Crystal oscillator for subsystem clock oscillation
Standby function STOP/HALT mode
Power supply voltage VDD = 1.8 to 5.5 V
Package • 80-pin plastic QFP (14 × 14 mm)
• 80-pin plastic TQFP (fine pitch) (12 × 12 mm)
µ
PD75P3018A
3
Data Sheet U11917EJ2V1DS
CONTENTS
1. PIN CONFIGURATION (Top View) ................................................................................................4
2. BLOCK DIAGRAM ........................................................................................................................... 5
3. PIN FUNCTIONS .............................................................................................................................. 6
3.1 Port Pins ................................................................................................................................................... 6
3.2 Non-port Pins ........................................................................................................................................... 8
3.3 Pin Input/Output Circuits ......................................................................................................................... 10
3.4 Recommended Connection for Unused Pins ........................................................................................ 12
4. SWITCHING FUNCTION BETWEEN Mk I MODE AND Mk II MODE ....................................... 13
4.1 Difference between Mk I Mode and Mk II Mode ..................................................................................... 13
4.2 Setting of Stack Bank Selection Register (SBS) ................................................................................... 14
5. DIFFERENCES BETWEEN
µ
PD75P3018A AND
µ
PD753012A, 753016A, AND 753017A ....... 15
6. MEMORY CONFIGURATION .......................................................................................................... 16
6.1 Program Counter (PC) ............................................................................................................................. 16
6.2 Program Memory (PROM) ....................................................................................................................... 16
6.3 Data Memory (RAM) ................................................................................................................................. 19
7. INSTRUCTION SET ......................................................................................................................... 20
8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY ............................................. 30
8.1 Operation Modes for Program Memory Write/Verify ............................................................................ 30
8.2 Program Memory Write Procedure ......................................................................................................... 31
8.3 Program Memory Read Procedure ......................................................................................................... 32
8.4 One-time PROM Screening ..................................................................................................................... 33
9. ELECTRICAL SPECIFICATIONS ....................................................................................................34
10. PACKAGE DRAWINGS ................................................................................................................... 48
11. RECOMMENDED SOLDERING CONDITIONS .............................................................................. 52
APPENDIX A.
µ
PD75316B, 753017A AND 75P3018A FUNCTION LIST .......................................... 55
APPENDIX B. DEVELOPMENT TOOLS ............................................................................................... 57
APPENDIX C. RELATED DOCUMENTS ............................................................................................... 61
µ
PD75P3018A
4Data Sheet U11917EJ2V1DS
1. PIN CONFIGURATION (Top View)
80-pin plastic QFP (14 × 14 mm)
µ
PD75P3018AGC-3B9, 75P3018AGC-3B9-A, 75P3018AGC-8BT, 75P3018AGC-8BT-A
80-pin plastic TQFP (fine pitch) (12 × 12 mm)
µ
PD75P3018AGK-BE9, 75P3018AGK-9EU, 75P3018AGK-9EU-A
Note Connect the VPP directly to VDD during normal operation.
PIN IDENTIFICATIONS
BIAS : LCD Power Supply Bias Control P70-P73 : Port7
BP0-BP7 : Bit Port 0-7 PCL : Programmable Clock
BUZ : Buzzer Clock PTO0-PTO2 : Programmable Timer Output 0-2
COM0-COM3 : Common Output 0-3 RESET : Reset
D0-D7 : Data Bus 0-7 S0-S31 : Segment Output 0-31
INT0, 1, 4 : External Vectored Interrupt 0, 1, 4 SB0, SB1 : Serial Bus 0,1
INT2 : External Test Input 2 SCK : Serial Clock
KR0-KR7 : Key Return 0-7 SI : Serial Input
LCDCL : LCD Clock SO : Serial Output
MD0-MD3 : Mode Selection 0-3 SYNC : LCD Synchronization
P00-P03 : Port0 TI0-TI2 : Timer Input 0-2
P10-P13 : Port1 VDD : Positive Power Supply
P20-P23 : Port2 VLC0-VLC2 : LCD Power Supply 0-2
P30-P33 : Port3 VPP : Programming Power Supply
P40-P43 : Port4 Vss : Ground
P50-P53 : Port5 X1, X2 : Main System Clock Oscillation 1, 2
P60-P63 : Port6 XT1, XT2 : Subsystem Clock Oscillation 1, 2
S11
80
S10
79
S9
78
S8
77
S7
76
S6
75
S5
74
S4
73
S3
72
S2
71
S1
70
S0
69
RESET
68
P73/KR7
67
P72/KR6
66
P71/KR5
65
P70/KR4
64
P63/KR3
63
P62/KR2
62
P61/KR1
61
1
S12
S13
S14
S15
2
3
4
S16
5
S17
6
S18
7
S19
8
S20
9
S21
10
S22
11
S23
12
S24/BP0
13
S25/BP1
14
S26/BP2
15
S27/BP3
16
S28/BP4
17
S29/BP5
18
S30/BP6
19
S31/BP7
20
COM0
21
COM1
22
COM2
23
COM3
24
BIAS
25
V
LC0
26
V
LC1
27
V
LC2
28
P40/D0
29
P41/D1
30
P42/D2
31
P43/D3
32
Vss
33
P50/D4
34
P51/D5
35
P52/D6
36
P53/D7
37
P00/INT4
38
P01/SCK
39
P02/SO/SB0
40
60
P60/KR0
X2
X1
V
PPNote
XT2
59
58
57
56
XT1
55
V
DD
54
P33/MD3
53
P32/MD2
52
P31/SYNC/MD1
51
P30/LCDCL/MD0
50
P23/BUZ
49
P22/PCL/PTO2
48
P21/PTO1
47
P20/PTO0
46
P13/TI0
45
P12/INT2/TI1/TI2
44
P11/INT1
43
P10/INT0
42
P03/SI/SB1
41
µ
PD75P3018A
5
Data Sheet U11917EJ2V1DS
2. BLOCK DIAGRAM
PORT0 P00 to P034
PORT1 P10 to P134
PORT2 P20 to P234
PORT3 P30/MD0 to
P33/MD3
4
PORT4 P40/D0 to
P43/D3
4
PORT5 P50/D4 to
P53/D7
4
PORT6 P60 to P634
PORT7 P70 to P734
LCD
CONTROLLER
/DRIVER
S0 to S2324
S24/BP0 to
S31/BP7
8
COM0 to
COM3
4
V
LC0
to V
LC2
3
BIAS
LCDCL/P30/MD0
SYNC/P31/MD1
f
LCD
V
PP
V
DD
RESETV
SS
CPU CLOCK Φ
STAND BY
CONTROL
X2X1XT2XT1
SYSTEM CLOCK
GENERATOR
MAINSUB
CLOCK
DIVIDER
CLOCK
OUTPUT
CONTROL
fx/2
N
PCL/PTO2/P22
GENERAL
REG.
RAM
DATA
MEMORY
1024 x 4 BITS
BANK
SBS
SP (8)
ALU
DECODE
AND
CONTROL
TIMER/EVENT
COUNTER
#1
PTO1/P21
INTT1
TIMER/EVENT
COUNTER
#2
PTO2/P22/PCL
INTT2
BASIC
INTERVAL
TIMER/
WATCHDOG
TIMER
INTBT
TIMER/EVENT
COUNTER
#0
TI0/P13
INTT0
CLOCKED
SERIAL
INTERFACE
SI/SB1/P03
INTCSI
INTERRUPT
CONTROL
INT0/P10
TI1/TI2/
P12/INT2
PTO0/P20
TOUT0
WATCH
TIMER
INTW
BUZ/P23
f
LCD
SO/SB0/P02
SCK/P01
TOUT0
INT1/P11
INT2/P12/TI1/TI2
INT4/P00
KR0/P60 to
KR7/P73
BIT SEQ.
BUFFER (16)
8
PROGRAM
COUNTER
(15)
PROM
PROGRAM
MEMORY
32768 x 8 BITS
CY
TOUT0
µ
PD75P3018A
6Data Sheet U11917EJ2V1DS
3. PIN FUNCTIONS
3.1 Port Pins (1/2)
Pin Name I/O Alternate Function Function 8-bit After Reset I/O Circuit
I/O TypeNote 1
P00 Input INT4 This is a 4-bit input port (PORT0). Input <B>
P01 to P03 are 3-bit pins for which an internal
P01 SCK pull-up resistor connection can be specified <F>-A
by software.
P02 SO/SB0 <F>-B
P03 SI/SB1 <M>-C
P10 Input INT0 This is a 4-bit input port (PORT1). Input <B>-C
These are 4-bit pins for which an internal pull-up
P11 INT1 resistor connection can be specified by software.
P10/INT0 can select noise elimination circuit.
P12 TI1/TI2/INT2
P13 TI0
P20 I/O PTO0 This is a 4-bit I/O port (PORT2). Input E-B
These are 4-bit pins for which an internal pull-up
P21 PTO1 resistor connection can be specified by software.
P22 PCL/PTO2
P23 BUZ
P30 I/O LCDCL/MD0 This is a programmable 4-bit I/O port (PORT3). Input E-B
Input and output in single-bit units can be specified.
P31 SYNC/MD1 When set for 4-bit units, an internal pull-up resistor
connection can be specified by software.
P32 MD2
P33 MD3
P40Note 2 I/O D0 This is an N-ch open-drain 4-bit I/O port (PORT4). High M-E
When set to open-drain, voltage is 13 V. impedance
P41Note 2 D1 Also functions as data I/O pin (low-order 4 bits)
for program memory (PROM) write/verify.
P42Note 2 D2
P43Note 2 D3
P50Note 2 I/O D4 This is an N-ch open-drain 4-bit I/O port (PORT5). High M-E
When set to open-drain, voltage is 13 V. impedance
P51Note 2 D5 Also functions as data I/O pin (high-order 4 bits)
for program memory (PROM) write/verify.
P52Note 2 D6
P53Note 2 D7
Notes 1. Circuit types enclosed in brackets indicate Schmitt trigger input.
2. Low-level input leakage current increases when input instructions or bit manipulation instructions are executed.
µ
PD75P3018A
7
Data Sheet U11917EJ2V1DS
3.1 Port Pins (2/2)
Pin Name I/O Alternate Function Function 8-bit After Reset I/O Circuit
I/O TypeNote 1
P60 I/O KR0 This is a programmable 4-bit I/O port (PORT6). Input <F>-A
Input and output in single-bit units can be specified.
P61 KR1 When set for 4-bit units, an internal pull-up resistor
connection can be specified by software.
P62 KR2
P63 KR3
P70 I/O KR4 This is a 4-bit I/O port (PORT7). Input <F>-A
When set for 4-bit units, an internal pull-up resistor
P71 KR5 connection can be specified by software.
P72 KR6
P73 KR7
BP0 Output S24 1-bit output port (BIT PORT). These pins are also Note 2 H-A
used as segment output pin.
BP1 S25
BP2 S26
BP3 S27
BP4 Output S28
BP5 S29
BP6 S30
BP7 S31
Notes 1. Circuit types enclosed in brackets indicate Schmitt trigger input.
2. VLC1 is selected as the input source for BP0 to BP7. The output level varies depending on the external circuit
for BP0 to BP7 and VLC1.
Example: As shown below, BP0 to BP7 are mutually connected via the
µ
PD75P3018A, so the output levels of BP0 to BP7
are determined by the sizes of R1, R2, and R3.
R
1
V
LC1
ON
ON
BP0
BP1
R
3
R
2
V
DD
µ
PD75P3018A
µ
PD75P3018A
8Data Sheet U11917EJ2V1DS
3.2 Non-port Pins (1/2)
Pin Name I/O Alternate Function Function After Reset I/O Circuit
TypeNote 1
TI0 Input P13 External event pulse input to timer/event counter Input <B>-C
TI1, TI2 P12/INT2
PTO0 Output P20 Timer/event counter output Input E-B
PTO1 P21
PTO2 P22
PCL P22 Clock output
BUZ P23
Optional frequency output (for buzzer or system clock trimming)
SCK I/O P01 Serial clock I/O Input <F>-A
SO/SB0 P02 Serial data output <F>-B
Serial data bus I/O
SI/SB1 P03 Serial data input <M>-C
Serial data bus I/O
INT4 Input P00 Edge detection vectored interrupt input <B>
(both rising and falling edges detection)
INT0 Input P10 Edge detection vectored interrupt input
Noise elimination circuit/
Input <B>-C
(detected edge is selectable)
asynchronous is selectable
INT1 P11
INT0/P10 can select noise elimination circuit.
Asynchronous
INT2 P12/TI1/TI2 Rising edge detection testable input Asynchronous
KR0-KR3 Input P60-P63 Falling edge detection testable input Input <F>-A
KR4-KR7 Input P70-P73 Falling edge detection testable input Input <F>-A
X1 Input Ceramic/crystal oscillation circuit connection for main system
clock. If using an external clock, input to X1 and input
X2 inverted phase to X2.
XT1 Input Crystal oscillation circuit connection for subsystem clock.
If using an external clock, input to XT1 and input inverted
XT2 phase to XT2. XT1 can be used as a 1-bit (test) input.
RESET Input System reset input (low level active) <B>
MD0 Input P30/LCDCL Mode selection for program memory (PROM) write/verify Input E-B
MD1 P31/SYNC
MD2, MD3 P32, P33
D0-D3 I/O P40-P43 Data bus for program memory (PROM) write/verify Input M-E
D4-D7 P50-P53
VPPNote 2 ——Program power supply voltage for program memory
(PROM) write/verify.
For normal operation, connect directly to VDD.
Apply +12.5 V for PROM write/verify.
VDD ——Positive power supply
Vss Ground
Notes 1. Circuit types enclosed in brackets indicate Schmitt trigger input.
2. The VPP pin does not operate correctly during normal operation unless connected to the VDD pin.
µ
PD75P3018A
9
Data Sheet U11917EJ2V1DS
3.2 Non-port Pins (2/2)
Pin Name I/O Alternate Function Function After Reset I/O Circuit
Type
S0-S23 Output Segment signal output Note 1 G-A
S24-S31 Output BP0-BP7 Segment signal output Note 1 H-A
COM0-COM3 Output Common signal output Note 1 G-B
VLC0-VLC2 ——Power source for LCD driver
BIAS Output Output for external split resistor cut High
impedance
LCDCLNote 2 I/O P30/MD0 Clock output for driving external expansion driver Input E-B
SYNCNote 2 I/O P31/MD1 Clock output for synchronization of external expansion driver Input E-B
Notes 1. The VLCX (X = 0, 1, 2) shown below are selected as the input source for the display outputs.
S0-S31: VLC1, COM0-COM2: VLC2, COM3: VLC0
2. These pins are provided for future system expansion. Currently, only P30 and P31 are used.
µ
PD75P3018A
10 Data Sheet U11917EJ2V1DS
3.3 Pin Input/Output Circuits
The input/output circuits for the
µ
PD75P3018A’s pins are shown in abbreviated form below.
(1/2)
IN
V
DD
P-ch
N-ch
V
DD
P-ch
N-ch
OUT
Data
Output
disable
IN
V
DD
P-ch
IN/OUT
P.U.R.
enable
Data
P.U.R.
Type D
Output
disable
P.U.R. : Pull-Up Resistor
Type A
V
DD
P-ch P.U.R.
enable
P.U.R.
P.U.R. : Pull-Up Resistor
IN
V
DD
P-ch
IN/OUT
P.U.R.
enable
Data
P.U.R.
Type D
Output
disable
P.U.R. : Pull-Up Resistor
Type B
CMOS standard input buffer Push-pull output that can be set to high impedance output
(with both P-ch and N-ch OFF).
Schmitt trigger input with hysteresis characteristics.
TYPE A TYPE D
TYPE E-BTYPE B
TYPE B-C TYPE F-A
µ
PD75P3018A
11
Data Sheet U11917EJ2V1DS
(2/2)
TYPE F-B TYPE H-A
TYPE M-CTYPE G-A
TYPE G-B TYPE M-E
Output
disable
V
DD
P-ch
N-ch
IN/OUT
Data
V
DD
P-ch
P.U.R.
enable
P.U.R.
Output
disable
(N)
Output
disable
(P)
P.U.R. : Pull-Up Resistor
IN
Type G-A
Voltage
controller
Type D
SEG
data
Output
disable
Bit Port
data
V
DD
P-ch
IN/OUT
P.U.R.
enable
Data
P.U.R.
Output
disable
P.U.R. : Pull-Up Resistor
N-ch
P-ch
OUT
N-ch
V
LC0
V
LC1
COM
data
V
LC2
N-ch
N-ch
P-ch
Pull-up resistor operated only when executing input instructions
(when pins are low level, current flows from V
DD
to pins).
Output
disable
Data N-ch
IN/OUT
(+13 V
withstand
voltage)
Note
V
DD
P-ch
Input instruction
Note
P.U.R.
N-ch
N-ch
VLC2
N-chP-ch
OUT
VLC0
VLC1
SEG
data
(+13 V
withstand
voltage)
µ
PD75P3018A
12 Data Sheet U11917EJ2V1DS
3.4 Recommended Connection for Unused Pins
Pin Recommended Connection
P00/INT4 Connect to VSS or VDD
P01/SCK Connect to VSS or VDD via a resistor individually
P02/SO/SB0
P03/SI/SB1 Connect to VSS
P10/INT0, P11/INT1 Connect to VSS or VDD
P12/TI1/TI2/INT2
P13/TI0
P20/PTO0 Input : Connect to VSS or VDD via a resistor individually
P21/PTO1 Output : Leave open
P22/PTO2/PCL
P23/BUZ
P30/LCDCL/MD0
P31/SYNC/MD1
P32/MD2, P33/MD3
P40/D0-P43/D3 Connect to VSS
P50/D4-P53/D7
P60/KR0-P63/KR3
Input : Connect to VSS or VDD via a resistor individually
P70/KR4-P73/KR7 Output : Leave open
S0-S23 Leave open
S24/BP0-S31/BP7
COM0-COM3
VLC0-VLC2 Connect to VSS
BIAS Connect to VSS only when VLC0 to VLC2 are all not used.
In other cases, leave open.
XT1Note Connect to VSS
XT2Note Leave open
Note When subsystem clock is not used, specify SOS.0 = 1 (indicates that
internal feedback resistor is disconnected).
µ
PD75P3018A
13
Data Sheet U11917EJ2V1DS
4. SWITCHING FUNCTION BETWEEN Mk I MODE AND Mk II MODE
Setting a stack bank selection (SBS) register for the
µ
PD75P3018A enables the program memory to be switched between
Mk I mode and Mk II mode. This function is applicable when using the
µ
PD75P3018A to evaluate the
µ
PD753012A,
753016A, or 753017A.
When the SBS bit 3 is set to 1 : sets Mk I mode (supports Mk I mode for
µ
PD753012A, 753016A, and 753017A)
When the SBS bit 3 is set to 0 : sets Mk II mode (supports Mk II mode for
µ
PD753012A, 753016A, and 753017A)
4.1 Difference between Mk I Mode and Mk II Mode
Table 4-1 lists points of difference between the Mk I mode and the Mk II mode for the
µ
PD75P3018A.
Table 4-1. Difference between Mk I Mode and Mk II Mode
Item Mk I Mode Mk II Mode
Program counter PC13-0 PC14-0
PC14 is fixed at 0
Program memory (bytes) 16384 32768
Data memory (bits) 1024 × 4
Stack Stack bank Selectable via memory banks 0 to 3
No. of stack bytes 2 bytes 3 bytes
Instruction BRA !addr1 instruction Not available Available
CALLA !addr1 instruction
Instruction CALL !addr instruction 3 machine cycles 4 machine cycles
execution time CALLF !faddr instruction 2 machine cycles 3 machine cycles
Supported mask ROMs When set to Mk I mode: When set to Mk II mode:
µ
PD753012A, 753016A, and 753017A
µ
PD753012A, 753016A, and 753017A
Caution The Mk II mode supports a program area exceeding 16 Kbytes for the 75X and 75XL series. Therefore,
this mode is effective for enhancing software compatibility with products that have a program area of
more than 16 Kbytes.
With regard to the number of stack bytes during execution of subroutine call instructions, the usable
area increases by 1 byte per stack compared to the Mk I mode when the Mk II mode is selected.
However, when the CALL !addr and CALLF !faddr instructions are used, the machine cycle becomes
longer by 1 machine cycle. Therefore, if more emphasis is placed on RAM use efficiency and
processing performance than on software compatibility, the Mk I mode should be used.
µ
PD75P3018A
14 Data Sheet U11917EJ2V1DS
4.2 Setting of Stack Bank Selection Register (SBS)
Use the stack bank selection register to switch between Mk I mode and Mk II mode. Figure 4-1 shows the format for doing
this.
The stack bank selection register is set using a 4-bit memory manipulation instruction. When using the Mk I mode, be
sure to initialize the stack bank selection register to 10XXBNote at the beginning of the program. When using the Mk II mode,
be sure to initialize it to 00XXBNote.
Note Set the desired value for XX.
Figure 4-1. Format of Stack Bank Selection Register
Cautions 1. SBS3 is set to “1” after RESET input, and consequently the CPU operates in Mk I mode. When using
instructions for Mk II mode, set SBS3 to “0” and set Mk II mode before using the instructions.
2. When using Mk II mode, execute a subroutine call instruction and an interrupt instruction after
RESET input and after setting the stack bank selection register.
SBS3 SBS2 SBS1 SBS0F84H
Address 3 2 1 0
SBS
0
0
1
1
0
1
0
1
Symbol
Stack area specification
Memory bank 0
Memory bank 1
Memory bank 2
Memory bank 3
0 Be sure to set bit 2 to 0.
0
1
Mk II mode
Mk I mode
Mode selection specification
µ
PD75P3018A
15
Data Sheet U11917EJ2V1DS
5. DIFFERENCES BETWEEN
µ
PD75P3018A AND
µ
PD753012A, 753016A, AND 753017A
The
µ
PD75P3018A replaces the internal mask ROM in the
µ
PD753012A, 753016A, and 753017A with a one-time PROM
and features expanded ROM capacity. The
µ
PD75P3018A’s Mk I mode supports the Mk I mode in the
µ
PD753012A,
753016A, and 753017A and the
µ
PD75P3018A’s Mk II mode supports the Mk II mode in the
µ
PD753012A, 753016A, and
753017A.
Table 5-1 lists differences among the
µ
PD75P3018A and the
µ
PD753012A, 753016A, and 753017A. Be sure to check
the differences among these products before using them with PROMs for debugging or prototype testing of application
systems or, later, when using them with a mask ROM for full-scale production.
For the CPU functions and internal hardwares, refer to
µ
PD753017 User's Manual (U11282E).
Table 5-1. Differences between
µ
PD75P3018A and
µ
PD753012A, 753016A, and 753017A
Item
µ
PD753012A
µ
PD753016A
µ
PD753017A
µ
PD75P3018A
Program counter 14 bits 15 bits
Program memory (bytes) Mask ROM One-time PROM
During 12288 16384 16384 16384
Mk I mode
During 12288 16384 24576 32768
Mk II mode
Data memory (× 4 bits) 1024
Mask options Pull-up resistor for Yes (Can be specified whether to incorporate or not)
No (Cannot incorporate)
PORT4 and PORT5
LCD split resistor
Feedback resistor Yes (Can be specified whether to use or not)
No (used)
for subsystem clock
Wait time Yes (Can be specified either 217/fX or 215/fX)Note
No (Fixed at 2
15
/fX)
Note
during RESET
Pin configuration Pin Nos. 29 to 32 P40 to P43 P40/D0 to P43/D3
Pin Nos. 34 to 37 P50 to P53 P50/D4 to P53/D7
Pin No. 50 P30/LCDCL P30/LCDCL/MD0
Pin No. 51 P31/SYNC P31/SYNC/MD1
Pin Nos. 52 and 53 P32, P33 P32/MD2, P33/MD3
Pin No. 57 IC VPP
Other Noise resistance and noise radiation may differ due to the different circuit sizes and mask
layouts.
Note For 217/fX, during 6.0 MHz operation is 21.8 ms, and during 4.19 MHz operation is 31.3 ms.
For 215/fX, during 6.0 MHz operation is 5.46 ms, and during 4.19 MHz operation is 7.81 ms.
Caution Noise resistance and noise radiation are different in PROM and mask ROMs. In transferring to mask
ROM version from the PROM version in a process between prototype development and full production,
be sure to fully evaluate the mask ROM version’s CS (not ES).
µ
PD75P3018A
16 Data Sheet U11917EJ2V1DS
6. MEMORY CONFIGURATION
6.1 Program Counter (PC) ... 15 bits
This is a 15-bit binary counter that stores program memory address data.
Bit 15 is valid during Mk II mode. But PC14 is fixed at zero during Mk I mode, and the lower 14 bits are all valid.
Figure 6-1. Configuration of Program Counter
6.2 Program Memory (PROM) ... 32768 × 8 bits
The program memory consists of 32768 × 8-bit one-time PROM. The program memory address can be selected as shown
below by setting the stack bank selection (SBS) register.
Mk I Mode Mk II Mode
Usable address 0000H to 3FFFH 0000H to 7FFFH
Figures 6-2 and 6-3 show the addressing ranges for the program memory and branch instruction and the subroutine call
instruction, during Mk I and Mk II modes.
PC14 PC13 PC12 PC11 PC10 PC9 PC8 PC7 PC6 PC5 PC4 PC3 PC2 PC1 PC0 PC
Fixed at zero during
Mk I mode
µ
PD75P3018A
17
Data Sheet U11917EJ2V1DS
Figure 6-2. Program Memory Map (Mk I mode)
Remark For instructions other than those noted above, the BR PCDE and BR PCXA instructions can be used to branch
to addresses with changes in the PC’s low-order 8 bits only.
MBE
MBE
MBE
MBE
MBE
MBE
MBE
RBE
RBE
RBE
RBE
RBE
RBE
RBE
Internal reset start address (high-order 6 bits)
Internal reset start address (low-order 8 bits)
INTBT/INT4 start address (high-order 6 bits)
INTBT/INT4 start address (low-order 8 bits)
INT0 start address (high-order 6 bits)
INT0 start address (low-order 8 bits)
INT1 start address (high-order 6 bits)
INT1 start address (low-order 8 bits)
INTCSI start address (high-order 6 bits)
INTCSI start address (low-order 8 bits)
INTT0 start address (high-order 6 bits)
INTT0 start address (low-order 8 bits)
INTT1, INTT2 start address (high-order 6 bits)
INTT1, INTT2 start address (low-order 8 bits)
Reference table for GETI instruction
0000H
0002H
0004H
0006H
0008H
000AH
000CH
007FH
0080H
07FFH
0800H
0FFFH
1000H
1FFFH
2000H
2FFFH
3000H
3FFFH
CALLF
!faddr instruction
entry address
Branch addresses for
the following instructions
• BR BCDE
• BR BCXA
• BR !addr
• CALL !addr
Branch/call
address
by GETI
BR $addr instruction
relative branch address
(–15 to –1,
+2 to +16)
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
765 0
0020H
µ
PD75P3018A
18 Data Sheet U11917EJ2V1DS
Figure 6-3. Program Memory Map (Mk II mode)
Caution To allow the vectored interrupt’s 14-bit start address (noted above), set the address within a 16K area
(0000H to 3FFFH).
Remark For instructions other than those noted above, the BR PCDE and BR PCXA instructions can be used to branch
to addresses with changes in the PC’s low-order 8 bits only.
MBE
MBE
MBE
MBE
MBE
MBE
MBE
RBE
RBE
RBE
RBE
RBE
RBE
RBE
Internal reset start address (high-order 6 bits)
Internal reset start address (low-order 8 bits)
INTBT/INT4 start address (high-order 6 bits)
INTBT/INT4 start address (low-order 8 bits)
INT0 start address (high-order 6 bits)
INT0 start address (low-order 8 bits)
INT1 start address (high-order 6 bits)
INT1 start address (low-order 8 bits)
INTCSI start address (high-order 6 bits)
INTCSI start address (low-order 8 bits)
INTT0 start address (high-order 6 bits)
INTT0 start address (low-order 8 bits)
INTT1, INTT2 start address (high-order 6 bits)
INTT1, INTT2 start address (low-order 8 bits)
Reference table for GETI instruction
0000H
0002H
0004H
0006H
0008H
000AH
000CH
1FFFH
2000H
2FFFH
3000H
3FFFH
4000H
4FFFH
5000H
5FFFH
6000H
6FFFH
7000H
7FFFH
0020H
007FH
0080H
07FFH
0800H
0FFFH
1000H
CALLF
!faddr instruction
entry address
BR
!addr instruction
branch address
CALL
!addr instruction
branch address
Branch/call
address
by GETI
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
765 0
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
Branch addresses for
the following instructions
• BR BCDE
• BR BCXA
• BRA !addr1
• CALLA !addr1
BR $addr1 instruction
relative branch address
(–15 to –1,
+2 to +16)
µ
PD75P3018A
19
Data Sheet U11917EJ2V1DS
6.3 Data Memory (RAM) ... 1024 × 4 bits
Figure 6-4 shows the data memory configuration.
Data memory consists of a data area and a peripheral hardware area. The data area consists of 1024 × 4-bit static RAM.
Figure 6-4. Data Memory Map
Note Memory bank 0, 1, 2, or 3 can be selected as the stack area.
(32 × 4)
256 × 4
(224 × 4)
256 × 4
(224 × 4)
(32 × 4)
256 × 4
256 × 4
128 × 4
0
1
2
3
15
000H
01FH
020H
0FFH
100H
1DFH
1E0H
1FFH
200H
2FFH
300H
3FFH
F80H
FFFH
General-purpose register area
Display data memory
Data area
static RAM
(1024 × 4)
Stack area
Note
Peripheral hardware area
Data memory Memory bank
Not incorporated
µ
PD75P3018A
20 Data Sheet U11917EJ2V1DS
7. INSTRUCTION SET
(1) Representation and coding formats for operands
In the instruction’s operand area, use the following coding format to describe operands corresponding to the instruction’s
operand representations (for further description, see the RA75X Assembler Package User’s Manual Language
(U12385E)). When there are several codes, select and use just one. Codes that consist of uppercase letters and + or
– symbols are key words that should be entered as they are.
For immediate data, enter an appropriate numerical value or label.
Enter register flag symbols as label descriptors instead of mem, fmem, pmem, bit, etc. (For details, refer to the
µ
PD753017
User’s Manual (U11282E)). The number of labels that can be entered for fmem and pmem are restricted.
Representation Coding Format
reg X, A, B, C, D, E, H, L
reg1 X, B, C, D, E, H, L
rp XA, BC, DE, HL
rp1 BC, DE, HL
rp2 BC, DE
rp’ XA, BC, DE, HL, XA’, BC’, DE’, HL’
rp’1 BC, DE, HL, XA’, BC’, DE’, HL’
rpa HL, HL+, HL–, DE, DL
rpa1 DE, DL
n4 4-bit immediate data or label
n8 8-bit immediate data or label
mem 8-bit immediate data or labelNote
bit 2-bit immediate data or label
fmem FB0H-FBFH, FF0H-FFFH immediate data or label
pmem FC0H-FFFH immediate data or label
addr 0000H-3FFFH immediate data or label
addr1 0000H-7FFFH immediate data or label (Mk II mode only)
caddr 12-bit immediate data or label
faddr 11-bit immediate data or label
taddr 20H-7FH immediate data (however, bit0 = 0) or label
PORTn PORT0-PORT7
IEXXX IEBT, IECSI, IET0, IET1, IET2, IE0-IE2, IE4, IEW
RBn RB0-RB3
MBn MB0-MB3, MB15
Note When processing 8-bit data, only even-numbered addresses can be specified.
µ
PD75P3018A
21
Data Sheet U11917EJ2V1DS
(2) Operation legend
A: A register; 4-bit accumulator
B: B register
C: C register
D: D register
E: E register
H: H register
L: L register
X: X register
XA : Register pair (XA); 8-bit accumulator
BC : Register pair (BC)
DE : Register pair (DE)
HL : Register pair (HL)
XA’ : Expansion register pair (XA’)
BC’ : Expansion register pair (BC’)
DE’ : Expansion register pair (DE’)
HL’ : Expansion register pair (HL’)
PC : Program counter
SP : Stack pointer
CY : Carry flag; bit accumulator
PSW : Program status word
MBE : Memory bank enable flag
RBE : Register bank enable flag
PORTn : Port n (n = 0 to 7)
IME : Interrupt master enable flag
IPS : Interrupt priority selection register
IEXXX : Interrupt enable flag
RBS : Register bank selection register
MBS : Memory bank selection register
PCC : Processor clock control register
.: Delimiter for address and bit
(XX) : Addressed data
XXH : Hexadecimal data
µ
PD75P3018A
22 Data Sheet U11917EJ2V1DS
(3) Description of symbols used in addressing area
Remarks 1. MB indicates access-enabled memory banks.
2. In area *2, MB = 0 for both MBE and MBS.
3. In areas *4 and *5, MB = 15 for both MBE and MBS.
4. Areas *6 to *11 indicate corresponding address-enabled areas.
MB = 0 (000H-07FH)
MB = 15 (F80H-FFFH)
MB = MBS
MBS = 0-3, 15
MB = MBE • MBS
MBS = 0-3, 15
*1
MB = 0
*2
MBE = 1 :
MBE = 0 :
*3
MB = 15, fmem = FB0H-FBFH, FF0H-FFFH
MB = 15, pmem = FC0H-FFFH
addr = 0000H-3FFFH
*4
*5
*6
addr, addr1 =
*7 (Current PC) –15 to (Current PC) –1
(Current PC) +2 to (Current PC) +16
*8 caddr = 0000H-0FFFH (PC
14
,
13
,
12
= 000B) or
1000H-1FFFH (PC
14
,
13
,
12
= 001B) or
2000H-2FFFH (PC
14
,
13
,
12
= 010B) or
3000H-3FFFH (PC
14
,
13
,
12
= 011B) or
4000H-4FFFH (PC
14
,
13
,
12
= 100B: Mk II mode only) or
5000H-5FFFH (PC
14
,
13
,
12
= 101B: Mk II mode only) or
6000H-6FFFH (PC
14
,
13
,
12
= 110B: Mk II mode only) or
7000H-7F7FH (PC
14
,
13
,
12
= 111B: Mk II mode only)
faddr = 0000H-07FFH
taddr = 0020H-007FH
addr1 = 0000H-7FFFH (Mk II mode only)
*9
*10
*11
Program memory
addressing
Data memory
addressing
µ
PD75P3018A
23
Data Sheet U11917EJ2V1DS
(4) Description of machine cycles
S indicates the number of machine cycles required for skipping of skip-specified instructions. The value of S varies as
shown below.
• No skip ..................................................................... S = 0
• Skipped instruction is 1-byte or 2-byte instruction .... S = 1
• Skipped instruction is 3-byte instructionNote .............. S = 2
Note 3-byte instructions: BR !addr, BRA !addr1, CALL !addr, CALLA !addr1
Caution The GETI instruction is skipped for one machine cycle.
One machine cycle equals one cycle (= tCY) of the CPU clock Φ. Use the PCC setting to select among four cycle times.
µ
PD75P3018A
24 Data Sheet U11917EJ2V1DS
Instruction Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
Group
Bytes Cycle Area
Condition
Transfer MOV A, #n4 1 1 A n4 String-effect A
reg1, #n4 2 2 reg1 n4
XA, #n8 2 2 XA n8 String-effect A
HL, #n8 2 2 HL n8 String-effect B
rp2, #n8 2 2 rp2 n8
A, @HL 1 1 A (HL) *1
A, @HL+ 1 2+S A (HL), then L L+1 *1 L=0
A, @HL– 1 2+S A (HL), then L L–1 *1 L=FH
A, @rpa1 1 1 A (rpa1) *2
XA, @HL 2 2 XA (HL) *1
@HL, A 1 1 (HL) A*1
@HL, XA 2 2 (HL) XA *1
A, mem 2 2 A (mem) *3
XA, mem 2 2 XA (mem) *3
mem, A 2 2 (mem) A*3
mem, XA 2 2 (mem) XA *3
A, reg 2 2 A reg
XA, rp’ 2 2 XA rp’
reg1, A 2 2 reg1 A
rp’1, XA 2 2 rp’1 XA
XCH A, @HL 1 1 A (HL) *1
A, @HL+ 1 2+S A (HL), then L L+1 *1 L=0
A, @HL– 1 2+S A (HL), then L L–1 *1 L=FH
A, @rpa1 1 1 A (rpa1) *2
XA, @HL 2 2 XA (HL) *1
A, mem 2 2 A (mem) *3
XA, mem 2 2 XA (mem) *3
A, reg1 1 1 A reg1
XA, rp’ 2 2 XA rp’
Table MOVTNote 1 XA, @PCDE 1 3 XA (PC13-8+DE)ROM
reference XA (PC14-8+DE)ROM
XA, @PCXA 1 3 XA (PC13-8+XA)ROM
XA (PC14-8+XA)ROM
XA, @BCDE 1 3 XA (BCDE)ROMNote 2 *6
XA (BCDE)ROMNote 2 *11
XA, @BCXA 1 3 XA (BCXA)ROMNote 2 *6
XA (BCXA)ROMNote 2 *11
Notes 1. Shaded areas indicate support for Mk II mode only. Other areas indicate support for Mk I mode only.
2. Only the low-order 3 bits in the B register are valid.
µ
PD75P3018A
25
Data Sheet U11917EJ2V1DS
Instruction Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
Group
Bytes Cycle Area
Condition
Bit transfer MOV1 CY, fmem.bit 2 2 CY(fmem.bit) *4
CY, pmem.@L 2 2 CY (pmem7-2+L3-2.bit(L1-0)) *5
CY, @H+mem.bit 2 2 CY (H+mem3-0.bit) *1
fmem.bit, CY 2 2 (fmem.bit) CY *4
pmem.@L, CY 2 2 (pmem7-2+L3-2.bit(L1-0)) CY *5
@H+mem.bit, CY 2 2 (H+mem3-0.bit) CY *1
Arithmetic ADDS A, #n4 1 1+S A A+n4 carry
XA, #n8 2 2+S XA XA+n8 carry
A, @HL 1 1+S A A+(HL) *1 carry
XA, rp’ 2 2+S XA XA+rp’ carry
rp’1, XA 2 2+S rp’1 rp’1+XA carry
ADDC A, @HL 1 1 A, CY A+(HL)+CY *1
XA, rp’ 2 2 XA, CY XA+rp’+CY
rp’1, XA 2 2 rp’1, CY rp’1+XA+CY
SUBS A, @HL 1 1+S A A–(HL) *1 borrow
XA, rp’ 2 2+S XA XA–rp’ borrow
rp’1, XA 2 2+S rp’1 rp’1–XA borrow
SUBC A, @HL 1 1 A, CY A–(HL)–CY *1
XA, rp’ 2 2 XA, CY XA–rp’–CY
rp’1, XA 2 2 rp’1, CY rp’1–XA–CY
AND A, #n4 2 2 A A n4
A, @HL 1 1 A A (HL) *1
XA, rp’ 2 2 XA XA rp’
rp’1, XA 2 2 rp’1 rp’1 XA
OR A, #n4 2 2 A A n4
A, @HL 1 1 A A (HL) *1
XA, rp’ 2 2 XA XA rp’
rp’1, XA 2 2 rp’1 rp’1 XA
XOR A, #n4 2 2 A A n4
A, @HL 1 1 A A (HL) *1
XA, rp’ 2 2 XA XA rp’
rp’1, XA 2 2 rp’1 rp’1 XA
Accumulator RORC A 1 1 CY A0, A3 CY, An-1 An
manipulation NOT A 2 2 A A
Increment/ INCS reg 1 1+S reg reg+1 reg=0
decrement rp1 1 1+S rp1 rp1+1 rp1=00H
@HL 2 2+S (HL) (HL)+1 *1 (HL)=0
mem 2 2+S (mem) (mem)+1 *3 (mem)=0
DECS reg 1 1+S reg reg–1 reg=FH
rp’ 2 2+S rp’ rp’–1 rp’=FFH
µ
PD75P3018A
26 Data Sheet U11917EJ2V1DS
Instruction Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
Group
Bytes Cycle Area
Condition
Comparison SKE reg, #n4 2 2+S Skip if reg=n4 reg=n4
@HL, #n4 2 2+S Skip if (HL)=n4 *1 (HL)=n4
A, @HL 1 1+S Skip if A=(HL) *1 A=(HL)
XA, @HL 2 2+S Skip if XA=(HL) *1 XA=(HL)
A, reg 2 2+S Skip if A=reg A=reg
XA, rp’ 2 2+S Skip if XA=rp’ XA=rp’
Carry flag SET1 CY 1 1 CY 1
manipulation CLR1 CY 1 1 CY 0
SKT CY 1 1+S Skip if CY=1 CY=1
NOT1 CY 1 1 CY CY
Memory bit SET1 mem.bit 2 2 (mem.bit) 1*3
manipulation fmem.bit 2 2 (fmem.bit) 1 *4
pmem.@L 2 2 (pmem7-2+L3-2.bit(L1-0)) 1*5
@H+mem.bit 2 2 (H+mem3-0.bit) 1*1
CLR1 mem.bit 2 2 (mem.bit) 0*3
fmem.bit 2 2 (fmem.bit) 0*4
pmem.@L 2 2 (pmem7-2+L3-2.bit(L1-0)) 0*5
@H+mem.bit 2 2 (H+mem3-0.bit) 0*1
SKT mem.bit 2 2+S Skip if(mem.bit)=1 *3 (mem.bit)=1
fmem.bit 2 2+S Skip if(fmem.bit)=1 *4 (fmem.bit)=1
pmem.@L 2 2+S Skip if(pmem7-2+L3-2.bit(L1-0))=1 *5 (pmem.@L)=1
@H+mem.bit 2 2+S Skip if(H+mem3-0.bit)=1 *1
(@H+mem.bit)=1
SKF mem.bit 2 2+S Skip if(mem.bit)=0 *3 (mem.bit)=0
fmem.bit 2 2+S Skip if(fmem.bit)=0 *4 (fmem.bit)=0
pmem.@L 2 2+S Skip if(pmem7-2+L3-2.bit(L1-0))=0 *5 (pmem.@L)=0
@H+mem.bit 2 2+S Skip if(H+mem3-0.bit)=0 *1
(@H+mem.bit)=0
SKTCLR fmem.bit 2 2+S Skip if(fmem.bit)=1 and clear *4 (fmem.bit)=1
pmem.@L 2 2+S
Skip if(pmem7-2+L3-2.bit (L1-0))=1 and clear
*5 (pmem.@L)=1
@H+mem.bit 2 2+S Skip if(H+mem3-0.bit)=1 and clear *1
(@H+mem.bit)=1
AND1 CY, fmem.bit 2 2 CY CY (fmem.bit) *4
CY, pmem.@L 2 2 CY CY (pmem7-2+L3-2.bit(L1-0)) *5
CY, @H+mem.bit 2 2 CY C (H+mem3-0.bit) *1
OR1 CY, fmem.bit 2 2 CY CY (fmem.bit) *4
CY, pmem.@L 2 2 CY CY (pmem7-2+L3-2.bit(L1-0)) *5
CY, @H+mem.bit 2 2 CY CY (H+mem3-0.bit) *1
XOR1 CY, fmem.bit 2 2 CY CY (fmem.bit) *4
CY, pmem.@L 2 2 CY CY (pmem7-2+L3-2.bit(L1-0)) *5
CY, @H+mem.bit 2 2 CY C (H+mem3-0.bit) *1
µ
PD75P3018A
27
Data Sheet U11917EJ2V1DS
Instruction Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
Group
Bytes Cycle Area
Condition
Branch BRNote 1 addr PC14 0, PC13-0 addr *6
Use the assembler to select the
most appropriate instruction
among the following.
• BR !addr
• BRCB !caddr
• BR $addr
addr1 PC14-0 addr1 *11
Use the assembler to select
the most appropriate instruction
among the following.
• BRA !addr1
• BR !addr
• BRCB !caddr
• BR $addr1
!addr 3 3 PC14 0, PC13-0 addr *6
$addr 1 2 PC14 0, PC13-0 addr *7
$addr1 1 2 PC14-0 addr1
PCDE 2 3 PC14 0, PC13-0 PC13-8+DE
PC14-0 PC14-8+DE
PCXA 2 3 PC14 0, PC13-0 PC13-8+XA
PC14-0 PC14-8+XA
BCDE 2 3 PC14 0, PC13-0 BCDENote 2 *6
PC14-0 BCDENote 2 *11
BCXA 2 3 PC14 0, PC13-0 BCXANote 2 *6
PC14-0 BCXANote 2 *11
BRANote 1 !addr 3 3 PC14 0, PC13-0 addr *6
33PC14-0 addr1 *11
BRCBNote 1 !caddr 2 2 PC14 0, PC13-0 PC13, 12+caddr11-0 *8
PC14-0 PC14, 13, 12+caddr11-0
Notes 1. Shaded areas indicate support for Mk II mode only. Other areas indicate support for Mk I mode only.
2. The only following bits are valid in the B register.
For Mk I mode : Low-order 2 bits
For Mk II mode : Low-order 3 bits
µ
PD75P3018A
28 Data Sheet U11917EJ2V1DS
Instruction Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
Group
Bytes Cycle Area
Condition
Subroutine CALLANote !addr1 3 3 (SP–5) 0, PC14-12 *11
stack control (SP–6)(SP–3)(SP–4) PC11-0
(SP–2) X, X, MBE, RBE
PC14–0 addr1, SP SP–6
CALLNote !addr 3 3 (SP–4)(SP–1)(SP–2) PC11-0 *6
(SP–3) MBE, RBE, PC13, 12
PC14 0, PC13–0 addr, SP SP–4
4 (SP–5) 0, PC14-12
(SP–6)(SP–3)(SP–4) PC11-0
(SP–2) X, X, MBE, RBE
PC14 0, PC13-0 addr, SP SP–6
CALLFNote !faddr 2 2 (SP–4)(SP–1)(SP–2) PC11-0 *9
(SP–3) MBE, RBE, PC13, 12
PC14 0, PC13-0 000+faddr, SP SP–4
3 (SP–5) 0, PC14-12
(SP–6)(SP–3)(SP–4) PC11-0
(SP–2) X, X, MBE, RBE
PC14-0 0000+faddr, SP SP–6
RETNote 13MBE, RBE, PC13, 12 (SP+1)
PC11-0 (SP)(SP+3)(SP+2)
PC14 0, SP SP+4
X, X, MBE, RBE (SP+4)
0, PC14-12 (SP+1)
PC11-0 (SP)(SP+3)(SP+2)
SP SP+6
RETSNote 13+S MBE, RBE, PC13, 12 (SP+1) Unconditional
PC11-0 (SP)(SP+3)(SP+2)
PC14 0, SP SP+4
then skip unconditionally
X, X, MBE, RBE (SP+4)
0, PC14-12 (SP+1)
PC11-0 (SP)(SP+3)(SP+2)
SP SP+6
then skip unconditionally
RETINote 13
MBE, RBE, PC
13, 12
(SP+1), PC
14
0
PC11-0 (SP)(SP+3)(SP+2)
PSW (SP+4)(SP+5), SP SP+6
0, PC14-12 (SP+1)
PC11-0 (SP)(SP+3)(SP+2)
PSW (SP+4)(SP+5), SP SP+6
Note Shaded areas indicate support for Mk II mode only. Other areas indicate support for Mk I mode only.
µ
PD75P3018A
29
Data Sheet U11917EJ2V1DS
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
- - - - - - - - - - - - - - - - - - - - - - - - - - -
Instruction Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
Group
Bytes Cycle Area
Condition
Subroutine PUSH rp 1 1 (SP–1)(SP–2) rp, SP SP–2
stack control BS 2 2
(SP–1) MBS, (SP–2) RBS, SP SP–2
POP rp 1 1 rp (SP+1)(SP), SP SP+2
BS 2 2
MBS (SP+1), RBS (SP), SP SP+2
Interrupt EI 2 2 IME(IPS.3) 1
control IEXXX 2 2 IEXXX 1
DI 2 2 IME(IPS.3) 0
IEXXX 2 2 IEXXX 0
I/O INNote 1 A, PORTn 2 2 A PORTn (n=0-7)
XA, PORTn 2 2
XA PORTn+1, PORTn
(n=4, 6)
OUTNote 1 PORTn, A 2 2 PORTn
A (n=2-7)
PORTn, XA 2 2
PORTn+1, PORTn XA
(n=4, 6)
CPU control HALT 2 2 Set HALT Mode(PCC.2
1)
STOP 2 2 Set STOP Mode(PCC.3
1)
NOP 1 1 No Operation
Special SEL RBn 2 2 RBS
n (n=0-3)
MBn 2 2 MBS
n (n=0-3, 15)
GETINote 2, 3 taddr 1 3 • When using TBR instruction *10
PC13-0 (taddr)5-0+(taddr+1), PC14 0
• When using TCALL instruction
(SP–4)(SP–1)(SP–2)
PC11-0
(SP–3) MBE, RBE, PC
13, 12
, PC
14
0
PC13-0
(taddr)5-0+(taddr+1)
SP
SP–4
• When using instruction other than Determined by
TBR or TCALL referenced
Execute (taddr)(taddr+1) instructions instruction
13• When using TBR instruction *10
PC13-0 (taddr)5-0+(taddr+1), PC14 0
4• When using TCALL instruction
(SP–5)
0, PC14-12
(SP–6)(SP–3)(SP–4)
PC11-0
(SP–2)
X, X, MBE, RBE, PC14
0
PC13-0
(taddr)5-0+(taddr+1)
SP
SP–6
3• When using instruction other than Determined by
TBR or TCALL referenced
Execute (taddr)(taddr+1) instructions instruction
Notes 1. Before executing the IN or OUT instruction, set MBE to 0 or 1 and set MBS to 15.
2. TBR and TCALL instructions are assembler pseudo-instructions for the GETI instruction’s table definitions.
3. Shaded areas indicate support for Mk II mode only. Other areas indicate support for Mk I mode only.
- - - - - - - - - - - - - - - - - - - - - - - - - - -
- - - - - - - - - - - -
- - - - - - - - - - - -
- - - - - - - - - - - -
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
µ
PD75P3018A
30 Data Sheet U11917EJ2V1DS
8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY
The program memory contained in the
µ
PD75P3018A is a 32768 × 8-bit one-time PROM that can be electrically written
one time only. The pins listed in the table below are used for this one-time PROM’s write/verify operations. Clock input
from the X1 pin is used instead of address input as a method for updating addresses.
Pin Function
VPP Pin where program voltage is applied during program memory
write/verify (usually VDD potential)
X1, X2 Clock input pins for address updating during program memory
write/verify. Input the X1 pin’s inverted signal to the
X2 pin.
MD0-MD3 Operation mode selection pin for program memory write/verify
D0/P40 to D3/P43 8-bit data I/O pins for program memory write/verify
(low-order 4 bits)
D4/P50 to D7/P53
(high-order 4 bits)
VDD Pin where power supply voltage is applied.
Applies VDD = 1.8 to 5.5 V in normal operation mode and +6 V
for program memory write/verify.
Caution Pins not used for program memory write/verify should be connected to VSS via a resistor individually.
8.1 Operation Modes for Program Memory Write/Verify
When +6 V is applied to the VDD pin and +12.5 V to the VPP pin, the
µ
PD75P3018A enters the program memory write/verify
mode. The following operation modes can be specified by setting pins MD0 to MD3 as shown below.
Operation Mode Specification Operation Mode
VPP VDD MD0 MD1 MD2 MD3
+12.5 V +6 V H L H L Zero-clear program memory address
LHHHWrite mode
LLHHVerify mode
HXHHProgram inhibit mode
X: L or H
µ
PD75P3018A
31
Data Sheet U11917EJ2V1DS
8.2 Program Memory Write Procedure
Program memory can be written at high speed using the following procedure.
(1) Pull unused pins to Vss through resistors. Set the X1 pin low.
(2) Supply 5 V to the VDD and VPP pins.
(3) Wait 10
µ
s.
(4) Select the zero-clear program memory address mode.
(5) Supply 6 V to the VDD and 12.5 V to the VPP pins.
(6) Write data in the 1 ms write mode.
(7) Select the verify mode. If the data is correct, go to step (8) and if not, repeat steps (6) and (7).
(8) (X : number of write operations from steps (6) and (7)) × 1 ms additional write.
(9) Apply four pulses to the X1 pin to increment the program memory address by one.
(10) Repeat steps (6) to (9) until the end address is reached.
(11) Select the zero-clear program memory address mode.
(12) Return the VDD and VPP pins back to 5 V.
(13) Turn off the power.
The following figure shows steps (2) to (9).
VPP
VDD
VDD + 1
VDD
VPP
VDD
X1
D0/P40 to D3/P43
D4/P50 to D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
X repetitions
Write Verify
Additional
write
Address
increment
Data input
Data
output
Data input
µ
PD75P3018A
32 Data Sheet U11917EJ2V1DS
8.3 Program Memory Read Procedure
The
µ
PD75P3018A can read program memory contents using the following procedure.
(1) Pull unused pins to Vss through resistors. Set the X1 pin low.
(2) Supply 5 V to the VDD and VPP pins.
(3) Wait 10
µ
s.
(4) Select the zero-clear program memory address mode.
(5) Supply 6 V to the VDD and 12.5 V to the VPP pins.
(6) Select the verify mode. Apply four pulses to the X1 pin. Every four clock pulses will output the data stored in one
address.
(7) Select the zero-clear program memory address mode.
(8) Return the VDD and VPP pins back to 5 V.
(9) Turn off the power.
The following figure shows steps (2) to (7).
V
PP
V
DD
V
DD
+ 1
V
DD
V
PP
V
DD
X1
D0/P40 to D3/P43
D4/P50 to D7/P53
MD0/P30
MD2/P32
MD3/P33
MD1/P31
“L”
Data output Data output
µ
PD75P3018A
33
Data Sheet U11917EJ2V1DS
8.4 One-time PROM Screening
Due to its structure, the one-time PROM cannot be fully tested before shipment by NEC Electronics. Therefore, NEC
Electronics recommends that after the required data is written and the PROM is stored under the temperature and time
conditions shown below, the PROM should be verified via a screening.
Storage Temperature Storage Time
125°C24 hours
µ
PD75P3018A
34 Data Sheet U11917EJ2V1DS
9. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings (TA = 25°C)
Parameter Symbol Conditions Ratings Unit
Supply voltage VDD –0.3 to +7.0 V
PROM supply voltage VPP –0.3 to +13.5 V
Input voltage VI1 Other than ports 4 and 5 –0.3 to VDD + 0.3 V
VI2
Ports 4 and 5 (During N-ch open drain)
–0.3 to +14 V
Output voltage VO–0.3 to VDD + 0.3 V
High-level output current IOH Per pin –10 mA
Total of all pins –30 mA
Low-level output current IOL Per pin 30 mA
Total of all pins 220 mA
Operating ambient TA–40 to +85Note °C
temperature
Storage temperature Tstg –65 to +150 °C
Note To drive LCD in normal mode, TA = –10 to +85°C
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge
of suffering physical damage, and therefore the product must be used under conditions that ensure
that the absolute maximum ratings are not exceeded.
Capacitance (TA = 25°C, VDD = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input capacitance CIN f = 1 MHz 15 pF
Output capacitance COUT Unmeasured pins returned to 0 V 15 pF
I/O capacitance CIO 15 pF
µ
PD75P3018A
35
Data Sheet U11917EJ2V1DS
Main System Clock Oscillator Characteristics (TA = –40 to +85°C, VDD = 1.8 to 5.5 V)
Resonator Recommended Circuit Parameter Conditions MIN. TYP. MAX. Unit
Ceramic Oscillation frequency 1.0 6.0Note 2 MHz
resonator (fX)Note 1
Oscillation After VDD has 4 ms
stabilization timeNote 3 reached MIN. value
of oscillation voltage
range
Crystal Oscillation frequency 1.0 6.0Note 2 MHz
resonator (fX)Note 1
Oscillation VDD = 4.5 to 5.5 V 10 ms
stabilization timeNote 3
30
External X1 input frequency 1.0 6.0Note 2 MHz
clock (fX)Note 1
X1 input high-/ 83.3 500 ns
low-level width
(tXH, tXL)
Notes 1. The oscillation frequency and X1 input frequency shown above indicate characteristics of the oscillator only.
For the instruction execution time, refer to AC Characteristics.
2. If the oscillation frequency is 4.19 MHz < fX 6.0 MHz at 1.8 V V DD < 2.7 V, do not select processor clock control
register (PCC) = 0011. If PCC = 0011, one machine cycle is less than 0.95
µ
s, falling short of the rated value
of 0.95
µ
s.
3. The oscillation stabilization time is the time required for oscillation to be stabilized after VDD has been applied
or STOP mode has been released.
Caution When using the main system clock oscillator, wire the portion enclosed in the broken line in the above
figure as follows to prevent adverse influence due to wiring capacitance:
• Keep the wiring length as short as possible.
• Do not cross the wiring with other signal lines.
• Do not route the wiring in the vicinity of a line through which a high alternating current flows.
• Always keep the ground point of the capacitor of the oscillator at the same potential as VDD.
• Do not ground to a power supply pattern through which a high current flows.
• Do not extract signals from the oscillator.
Remark For the resonator selection and oscillator constant, customers are requested to either evaluate the oscillation
themselves or apply to the resonator manufacturer for evaluation.
X1 X2
C1 C2
VDD
X1 X2
C1 C2
V
DD
X1 X2
µ
PD75P3018A
36 Data Sheet U11917EJ2V1DS
Subsystem Clock Oscillator Characteristics (TA = –40 to +85°C, VDD = 1.8 to 5.5 V)
Resonator Recommended Circuit Parameter Conditions MIN. TYP. MAX. Unit
Crystal Oscillation frequency 32 32.768 35 kHz
resonator (fXT)Note 1
Oscillation VDD = 4.5 to 5.5 V 1.0 2 s
stabilization timeNote 2
10
External XT1 input frequency 32 100 kHz
clock (fXT)Note 1
XT1 input high-/ 5 15
µ
s
low-level width
(tXTH, tXTL)
Notes 1. The oscillation frequency and XT1 input frequency shown above indicate characteristics of the oscillator only.
For the instruction execution time, refer to AC Characteristics.
2. The oscillation stabilization time is the time required for oscillation to be stabilized after VDD has been applied.
Caution When using the subsystem clock oscillator , wire the portion enclosed in the broken line in the above
figure as follows to prevent adverse influence due to wiring capacitance:
• Keep the wiring length as short as possible.
• Do not cross the wiring with other signal lines.
• Do not route the wiring in the vicinity of a line through which a high alternating current flows.
• Always keep the ground point of the capacitor of the oscillator at the same potential as VDD.
• Do not ground to a power supply pattern through which a high current flows.
• Do not extract signals from the oscillator.
The subsystem clock oscillator has a low amplification factor to reduce current consumption and is
more susceptible to noise than the main system clock oscillator. Therefore, exercise utmost care in
wiring the subsystem clock oscillator.
Remark For the resonator selection and oscillator constant, customers are requested to either evaluate the oscillation
themselves or apply to the resonator manufacturer for evaluation.
XT1 XT2
C3 C4
R
VDD
XT1 XT2
µ
PD75P3018A
37
Data Sheet U11917EJ2V1DS
DC Characteristics (TA = –40 to +85°C, VDD = 1.8 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Low-level output IOL Per pin 15 mA
current Total of all pins 150 mA
High-level input VIH1 Ports 2, 3 2.7 V VDD 5.5 V 0.7VDD VDD V
voltage 1.8 V VDD < 2.7 V 0.9VDD VDD V
VIH2 Ports 0, 1, 6, 7, RESET 2.7 V VDD 5.5 V 0.8VDD VDD V
1.8 V VDD < 2.7 V 0.9VDD VDD V
VIH3 Ports 4, 5 2.7 V VDD 5.5 V 0.7VDD 13 V
(N-ch open-drain) 1.8 V VDD < 2.7 V 0.9VDD 13 V
VIH4 X1, XT1 VDD – 0.1 VDD V
Low-level input VIL1 Ports 2 to 5 2.7 V VDD 5.5 V 0 0.3VDD V
voltage 1.8 V VDD < 2.7 V 0 0.1VDD V
VIL2 Ports 0, 1, 6, 7, RESET 2.7 V VDD 5.5 V 0 0.2VDD V
1.8 V VDD < 2.7 V 0 0.1VDD V
VIL3 X1, XT1 0 0.1 V
High-level output VOH SCK, SO, Ports 2, 3, 6, 7, BP0 to BP7 VDD – 0.5 V
voltage IOH = –1.0 mA
Low-level output VOL1 SCK, SO, Ports 2 to 7, IOL = 15 mA 0.2 2.0 V
voltage BP0 to BP7 VDD = 4.5 to 5.5 V
IOL = 1.6 mA 0.4 V
VOL2 SB0, SB1 N-ch open-drain 0.2VDD V
Pull-up resistor 1 k
High-level input ILIH1 VIN = VDD Pins other than X1, XT1 3
µ
A
leakage current ILIH2 X1, XT1 20
µ
A
ILIH3 VIN = 13 V Ports 4, 5 (N-ch open-drain) 20
µ
A
Low-level input ILIL1 VIN = 0 V Pins other than X1, XT1, Ports 4, 5 –3
µ
A
leakage current ILIL2 X1, XT1 –20
µ
A
ILIL3 Ports 4, 5 (N-ch open-drain) –3
µ
A
When input instruction is not executed
Ports 4, 5 (N-ch open- –30
µ
A
drain). When input VDD = 5.0 V –10 –27
µ
A
instruction is executed VDD = 3.0 V –3 –8
µ
A
High-level output ILOH1 VOUT = VDD SCK, SO/SB0, SB1, Ports 2, 3, 6, 7 3
µ
A
leakage current ILOH2 VOUT = 13 V Ports 4, 5 (N-ch open-drain) 20
µ
A
Low-level output ILOL VOUT = 0 V –3
µ
A
leakage current
Internal pull-up RLVIN = 0 V Ports 0 to 3, 6, 7 (except P00 pin) 50 100 200 k
resistor
µ
PD75P3018A
38 Data Sheet U11917EJ2V1DS
VDD = 3.0 V ±10% 3.5 12
µ
A
VDD = 3.0 V, TA = 25°C3.5 7
µ
A
VDD = 3.0 V ±10% 39 117
µ
A
VDD = 3.0 V, TA = 25°C3978
µ
A
DC Characteristics (TA = –40 to +85°C, VDD = 1.8 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
LCD drive voltage VLCD VAC0 = 0 TA = –40 to +85°C2.7 VDD V
T
A
= –10 to +85°C2.2 V
DD
V
VAC0 = 1 1.8 V
DD
V
VAC current
Note 1
IVAC
VAC0 = 1, V
DD
= 2.0 V ±10% 1 4
µ
A
LCD output voltage
VODC IO = ±1.0
µ
AVLCD0 = VLCD 0±0.2 V
deviationNote 2 VLCD1 = VLCD × 2/3
(common) VLCD2 = VLCD × 1/3
LCD output voltage
VODS IO = ±0.5
µ
A1.8 V VLCD VDD 0±0.2 V
deviationNote 2
(segment)
Supply current
Note 3
IDD1 6.0 MHzNote 4 VDD = 5.0 V ±10%Note 5 3.7 11.0 mA
crystal VDD = 3.0 V ±10%Note 6 0.73 2.2 mA
IDD2 oscillation HALT VDD = 5.0 V ±10% 0.92 2.6 mA
C1 = C2 = 22 pF
mode VDD = 3.0 V ±10% 0.3 0.9 mA
IDD1
4.19 MHz
Note 4
VDD = 5.0 V ±10%Note 5 2.7 8.0 mA
crystal VDD = 3.0 V ±10%Note 6 0.57 1.7 mA
IDD2 oscillation HALT VDD = 5.0 V ±10% 0.90 2.5 mA
C1 = C2 = 22 pF
mode VDD = 3.0 V ±10% 0.28 0.8 mA
IDD3 32.768 Low- VDD = 3.0 V ±10% 42 126
µ
A
kHzNote 7 voltage VDD = 2.0 V ±10% 37 110
µ
A
crystal
mode
Note 8
VDD = 3.0 V, TA = 25°C4284
µ
A
oscillation
IDD4 HALT Low- VDD = 3.0 V ±10% 8.5 25
µ
A
mode voltage VDD = 2.0 V ±10% 5.8 17
µ
A
mode
Note 8
VDD = 3.0 V, TA = 25°C8.5 17
µ
A
IDD5
XT1 = 0 V
Note 10
VDD = 5.0 V ±10% 0.05 10
µ
A
STOP mode VDD = 3.0 V ±10% 0.02 5
µ
A
TA = 25°C0.02 3
µ
A
Notes 1. Clear VAC0 to 0 in the low current consumption mode and STOP mode. When VAC0 is set to 1, the current
increases by about 1
µ
A.
2. Voltage deviation is the difference between the ideal values (VLCDn ; n = 0, 1, 2) of the segment and common
outputs and the output voltage.
3. The current flowing through the internal pull-up resistor is not included.
4. Including the case when the subsystem clock oscillates.
5. When the device operates in high-speed mode with the processor clock control register (PCC) set to 0011.
6. When the device operates in low-speed mode with PCC set to 0000.
7. When the device operates on the subsystem clock, with the system clock control register (SCC) set to 1001
and oscillation of the main system clock stopped.
8. When the sub-oscillation circuit control register (SOS) is set to 0000.
9. When the SOS is set to 0010.
10. When the SOS is set to 00x1, and the feedback resistor of the sub-oscillator is cut (x: don’t care).
Low current
consump-
tion
mode
Note 9
Low current
consump-
tion
mode
Note 9
µ
PD75P3018A
39
Data Sheet U11917EJ2V1DS
AC Characteristics (TA = –40 to +85°C, VDD = 1.8 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
CPU clock cycle time Note 1 tCY Operation with
VDD = 2.7 to 5.5 V
0.67 64
µ
s
(minimum instruction execution
main system clock 0.95 64
µ
s
time = 1 machine cycle) Operation with subsystem clock 114 122 125
µ
s
TI0, TI1, TI2 input frequency
fTI VDD = 2.7 to 5.5 V 0 1.0 MHz
0275 kHz
TI0, TI1, TI2 input high-/
tTIH
,
tTIL VDD = 2.7 to 5.5 V 0.48
µ
s
low-level
width 1.8
µ
s
Interrupt input high-/low-level
tINTH
,
tINTL INT0 IM02 = 0 Note 2
µ
s
width IM02 = 1 10
µ
s
INT1, 2, 4 10
µ
s
KR0-7 10
µ
s
RESET low-level
width tRSL 10
µ
s
Notes 1. The cycle time (minimum instruc-
tion execution time) of the CPU
clock (Φ) is determined by the
oscillation frequency of the
connected resonator (and
external clock), the system clock
control register (SCC), and
processor clock control register
(PCC).
The figure on the right shows the
supply voltage VDD vs. cycle time
tCY characteristics when the
device operates with the main
system clock.
2. 2tCY or 128/fX depending on the
setting of the interrupt mode
register (IM0).
Operation
guaranteed range
Supply voltage
VDD
[V]
0123456
0.5
1
2
3
4
5
6
60
64
Cycle time t
CY
[µs]
tCY vs VDD
(with main system clock)
µ
PD75P3018A
40 Data Sheet U11917EJ2V1DS
Serial transfer operation
2-wire and 3-wire serial I/O modes (SCK ... internal clock output): (TA = –40 to +85°C, VDD = 1.8 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
SCK cycle time tKCY1 VDD = 2.7 to 5.5 V 1300 ns
3800 ns
SCK high-/low-level width tKL1
,
tKH1 VDD = 2.7 to 5.5 V
t
KCY1
/2–50
ns
t
KCY1
/2–150
ns
SI
Note 1
setup time (to SCK )
tSIK1 VDD = 2.7 to 5.5 V 150 ns
500 ns
SI
Note 1
hold time (from SCK )
tKSI1 VDD = 2.7 to 5.5 V 400 ns
600 ns
SCK ↓ → SO
Note 1
output
tKSO1 RL = 1 k, Note 2 VDD = 2.7 to 5.5 V 0 250 ns
delay
time CL = 100 pF 0 1000 ns
Notes 1. In 2-wire serial I/O mode, read SB0 or SB1 instead.
2. RL and CL respectively indicate the load resistance and load capacitance of the SO output line.
2-wire and 3-wire serial I/O modes (SCK ... external clock input): (TA = –40 to +85°C, VDD = 1.8 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
SCK cycle time tKCY2 VDD = 2.7 to 5.5 V 800 ns
3200 ns
SCK high-/low-level width tKL2
,
tKH2 VDD = 2.7 to 5.5 V 400 ns
1600 ns
SI
Note 1
setup time (to SCK )
tSIK2 VDD = 2.7 to 5.5 V 100 ns
150 ns
SI
Note 1
hold time (from SCK )
tKSI2 VDD = 2.7 to 5.5 V 400 ns
600 ns
SCK ↓ → SO
Note 1
output
tKSO2 RL = 1 k, Note 2 VDD = 2.7 to 5.5 V 0 300 ns
delay
time CL = 100 pF 0 1000 ns
Notes 1. In 2-wire serial I/O mode, read SB0 or SB1 instead.
2. RL and CL respectively indicate the load resistance and load capacitance of the SO output line.
µ
PD75P3018A
41
Data Sheet U11917EJ2V1DS
SBI mode (SCK ... internal clock output (master)): (TA = –40 to +85°C, VDD = 1.8 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
SCK cycle time tKCY3 VDD = 2.7 to 5.5 V 1300 ns
3800 ns
SCK high-/low-level width tKL3
,
tKH3 VDD = 2.7 to 5.5 V
t
KCY3
/2–50
ns
t
KCY3
/2–150
ns
SB0, 1 setup time
tSIK3 VDD = 2.7 to 5.5 V 150 ns
(to SCK )
500 ns
SB0, 1 hold time (from SCK )
tKSI3 tKCY3/2 ns
SCK ↓ → SB0, 1 output
tKSO3 RL = 1 k, Note VDD = 2.7 to 5.5 V 0 250 ns
delay
time CL = 100 pF 0 1000 ns
SCK ↑ → SB0, 1
tKSB tKCY3 ns
SB0, 1 ↓ → SCK
tSBK tKCY3 ns
SB0, 1 low-level width tSBL tKCY3 ns
SB0, 1 high-level width tSBH tKCY3 ns
Note RL and CL respectively indicate the load resistance and load capacitance of the SB0, 1 output line.
SBI mode (SCK ... external clock input (slave)): (TA = –40 to +85°C, VDD = 1.8 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
SCK cycle time tKCY4 VDD = 2.7 to 5.5 V 800 ns
3200 ns
SCK high-/low-level width tKL4
,
tKH4 VDD = 2.7 to 5.5 V 400 ns
1600 ns
SB0, 1 setup time
tSIK4 VDD = 2.7 to 5.5 V 100 ns
(to SCK )
150 ns
SB0, 1 hold time (from SCK )
tKSI4 tKCY4/2 ns
SCK ↓ → SB0, 1 output
tKSO4 RL = 1 k, Note VDD = 2.7 to 5.5 V 0 300 ns
delay
time CL = 100 pF 0 1000 ns
SCK ↑ → SB0, 1
tKSB tKCY4 ns
SB0, 1 ↓ → SCK
tSBK tKCY4 ns
SB0, 1 low-level width tSBL tKCY4 ns
SB0, 1 high-level width tSBH tKCY4 ns
Note RL and CL respectively indicate the load resistance and load capacitance of the SB0, 1 output line.
µ
PD75P3018A
42 Data Sheet U11917EJ2V1DS
AC Timing Test Points (except X1 and XT1 inputs)
Clock Timing
TI0, TI1, TI2 Timing
V
IH
(MIN.)
V
IL
(MAX.)
V
IH
(MIN.)
V
IL
(MAX.)
V
OH
(MIN.)
V
OL
(MAX.)
V
OH
(MIN.)
V
OL
(MAX.)
XT1 input
1/fXT
tXTL tXTH
VDD–0.1 V
0.1 V
X1 input
1/fX
tXL tXH
VDD–0.1 V
0.1 V
TI0, TI1, TI2
1/fTI
tTIL tTIH
µ
PD75P3018A
43
Data Sheet U11917EJ2V1DS
Serial Transfer Timing
3-wire Serial I/O Mode
2-wire Serial I/O Mode
SCK
t
KCY1,2
t
KL1,2
t
KH1,2
t
SIK1,2
t
KSI1,2
SI
t
KSO1,2
Input data
Output data
SO
SCK
t
KCY1,2
t
KL1,2
t
KH1,2
t
SIK1,2
t
KSI1,2
t
KSO1,2
SB0, 1
µ
PD75P3018A
44 Data Sheet U11917EJ2V1DS
Serial Transfer Timing
Bus Release Signal Transfer
Command Signal Transfer
Interrupt Input Timing
RESET Input Timing
t
KSB
t
SBL
t
SBH
t
SBK
t
KCY3, 4
t
KL3, 4
t
KH3, 4
t
SIK3, 4
t
KSI3, 4
t
KSO3, 4
SCK
SB0, 1
t
KCY3, 4
t
KL3, 4
t
KH3, 4
t
KSB
t
SBK
t
SIK3, 4
t
KSO3, 4
SB0, 1
SCK
t
KSI3, 4
t
INTL
t
INTH
INT0, 1, 2, 4
KR0-7
t
RSL
RESET
µ
PD75P3018A
45
Data Sheet U11917EJ2V1DS
Data retention characteristics of data memory in STOP mode and at low supply voltage (TA = –40 to +85°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Data retention power VDDDR 1.8 5.5 V
supply voltage
Release signal setup time tSREL 0
µ
s
Oscillation stabilization tWAIT Released by RESET 215/fXms
wait timeNote 1 Released by interrupt request Note 2 ms
Notes 1. The oscillation stabilization wait time is the time during which the CPU stops operating to prevent unstable
operation when oscillation is started.
2. Set by the basic interval timer mode register (BTM). (Refer to the table below.)
Wait Time
BTM3 BTM2 BTM1 BTM0
fX = 4.19 MHz fX = 6.0 MHz
0002
20/fX (approx. 250 ms) 220/fX (approx. 175 ms)
0112
17/fX (approx. 31.3 ms) 217/fX (approx. 21.8 ms)
1012
15/fX (approx. 7.81 ms) 215/fX (approx. 5.46 ms)
1112
13/fX (approx. 1.95 ms) 213/fX (approx. 1.37 ms)
Data Retention Timing (standby release signal: when STOP mode released by interrupt signal)
STOP mode
V
DD
Operation mode
Internal reset operation
HALT mode
Data retention mode
t
SREL
t
WAIT
STOP instruction execution
RESET
V
DDDR
STOP mode
V
DD
Operation mode
HALT mode
Data retention mode
t
SREL
t
WAIT
STOP instruction execution
Standby release signal
(interrupt request)
V
DDDR
Data Retention Timing (when STOP mode released by RESET)
µ
PD75P3018A
46 Data Sheet U11917EJ2V1DS
DC Programming Characteristics (TA = 25 ±5°C, VDD = 6.0 ±0.25 V, VPP = 12.5 ±0.3 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
High-level input voltage VIH1 Pins other than X1, X2 0.7VDD VDD V
VIH2 X1, X2 VDD – 0.5 VDD V
Low-level input voltage VIL1 Pins other than X1, X2 0 0.3VDD V
VIL2 X1, X2 0 0.4 V
Input leakage current ILI VIN = VIL or VIH 10
µ
A
High-level output voltage VOH IOH = –1 mA VDD – 1.0 V
Low-level output voltage VOL IOL = 1.6 mA 0.4 V
VDD supply current IDD 30 mA
VPP supply current IPP MD0 = VIL, MD1 = VIH 30 mA
Cautions 1. Ensure that VPP does not exceed +13.5 V including overshoot.
2. VDD must be applied before VPP, and cut after VPP.
AC Programming Characteristics (TA = 25 ±5°C, VDD = 6.0 ±0.25 V, VPP = 12.5 ±0.3 V, VSS = 0 V)
Parameter Symbol Note 1 Conditions MIN. TYP. MAX. Unit
Address setup timeNote 2 (to MD0)tAS tAS 2
µ
s
MD1 setup time (to MD0)tM1S tOES 2
µ
s
Data setup time (to MD0)tDS tDS 2
µ
s
Address hold timeNote 2 (from MD0)tAH tAH 2
µ
s
Data hold time (from MD0)tDH tDH 2
µ
s
MD0↑→Data output float delay time
tDF tDF 0130 ns
VPP setup time (to MD3)tVPS tVPS 2
µ
s
VDD setup time (to MD3)tVDS tVCS 2
µ
s
Initial program pulse width tPW tPW 0.95 1.0 1.05 ms
Additional program pulse width tOPW tOPW 0.95 21.0 ms
MD0 setup time (to MD1)tM0S tCES 2
µ
s
MD0
Data output delay time
tDV tDV MD0 = MD1 = VIL 1
µ
s
MD1 hold time (from MD0)tM1H tOEH tM1H + tM1R 50
µ
s2
µ
s
MD1 recovery time (from MD0)tM1R tOR 2
µ
s
Program counter reset time tPCR —10
µ
s
X1 input high-/low-level widths tXH, tXL 0.125
µ
s
X1 input frequency fX 4.19 MHz
Initial mode setting time tI—2
µ
s
MD3 setup time (to MD1)tM3S —2
µ
s
MD3 hold time (from MD1)tM3H —2
µ
s
MD3 setup time (to MD0)tM3SR Program memory read 2
µ
s
Data output delay time from address
Note 2
tDAD tACC Program memory read 2
µ
s
Data output hold time from address
Note 2
tHAD tOH Program memory read 0 130
µ
s
MD3 hold time (from MD0)tM3HR Program memory read 2
µ
s
MD3
Data output float delay time
tDFR Program memory read 2
µ
s
Notes 1. Symbol of corresponding
µ
PD27C256A
2. The internal address signal is incremented by 1 on the 4th rise of the X1 input, and is not connected to a pin.
µ
PD75P3018A
47
Data Sheet U11917EJ2V1DS
Program Memory Write Timing
Program Memory Read Timing
VPP
VDD
VDD+1
VDD
X1
D0/P40-D3/P43
D4/P50-D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
VPP
VDD
Data Input
Data Output
Data Input Data Input
tVPS
tVDS
tXH
tXL
tI
tDS
tDH
tPW
tDV tDF
tM1R
tM0S
tDS tDH
tOPW
tAH tAS
tM1S tM1H
tPCR
tM3S
tM3H
VPP
VDD
VDD+1
VDD
X1
D0/P40-D3/P43
D4/P50-D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
VDD
VPP
Data Output Data Output
tVPS
tVDS
tXH
tXL tDAD
tHAD
tDV tDFR
tM3HR
tI
tPCR
tM3SR
µ
PD75P3018A
48 Data Sheet U11917EJ2V1DS
10. PACKAGE DRAWINGS
80-PIN PLASTIC QFP (14x14)
NOTE
Each lead centerline is located within 0.13 mm of
its true position (T.P.) at maximum material condition.
ITEM MILLIMETERS
A
B
D
G
17.2±0.4
14.0±0.2
0.13
0.825
I
17.2±0.4
J
C14.0±0.2
H0.30±0.10
0.65 (T.P.)
K1.6±0.2
L0.8±0.2
F0.825
S80GC-65-3B9-6
N
P
Q
0.10
2.7±0.1
0.1±0.1
R
S
5°±5°
3.0 MAX.
M0.15+0.10
0.05
60
61 40
80
121
20
41
S
SN
J
detail of lead end
C D
A
B
R
K
M
L
P
I
S
Q
G
F
M
H
µ
PD75P3018A
49
Data Sheet U11917EJ2V1DS
80-PIN PLASTIC QFP (14x14)
NOTE
Each lead centerline is located within 0.13 mm of
its true position (T.P.) at maximum material condition.
ITEM MILLIMETERS
A
B
D
G
17.20±0.20
14.00±0.20
0.13
0.825
I
17.20±0.20
J
C14.00±0.20
H 0.32±0.06
0.65 (T.P.)
K1.60±0.20
P1.40±0.10
Q0.125±0.075
L0.80±0.20
F0.825
N 0.10
M 0.17
+0.03
0.07
P80GC-65-8BT-1
S1.70 MAX.
R3°+7°
3°
4160 4061
2180 201
S
SN
J
detail of lead end
C D
A
B
R
K
M
L
P
I
S
Q
G
F
M
H
µ
PD75P3018A
50 Data Sheet U11917EJ2V1DS
20
1
S
80 PIN PLASTIC TQFP (FINE PITCH) (12x12)
ITEM MILLIMETERS
I
J0.50 (T.P.)
0.10
A14.00±0.20
B12.00±0.20
C12.00±0.20
D14.00±0.20
F
G1.25
1.25
H0.22
P80GK-50-BE9-6
S1.27 MAX.
K1.00±0.20
L0.50±0.20
M0.145
N0.10
P1.05±0.07
Q0.10±0.05
R5°±5°
+0.05
–0.04
+0.055
–0.045
J
NS L
K
M
detail of lead end
61
60 41
40
21
80
A
B
C D
S
QR
G
F
P
HI
M
NOTE
Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.
µ
PD75P3018A
51
Data Sheet U11917EJ2V1DS
80-PIN PLASTIC TQFP (FINE PITCH) (12x12)
ITEM MILLIMETERS
G
H0.22±0.05
1.25
A14.0±0.2
C12.0±0.2
D
F1.25
14.0±0.2
B12.0±0.2
M
N0.08
0.145±0.05
P
Q0.1±0.05
1.0
J0.5 (T.P.)
K
L0.5
1.0±0.2
I0.08
S1.1±0.1
R3°+4°
3°
R
H
K
L
J
FQ
GI
T
U
S
P
detail of lead end
NOTE
Each lead centerline is located within 0.08 mm of
its true position (T.P.) at maximum material condition.
60 41
40
21
61
80
120
M
S
S
CD
A
B
NM
P80GK-50-9EU-1
T0.25
U0.6±0.15
µ
PD75P3018A
52 Data Sheet U11917EJ2V1DS
11. RECOMMENDED SOLDERING CONDITIONS
The
µ
PD75P3018A should be soldered and mounted under the following recommended conditions.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Table 11-1. Surface Mounting Type Soldering Conditions (1/3)
(1)
µ
PD75P3018AGC-3B9: 80-pin plastic QFP (14 × 14 mm, resin thickness 2.7 mm)
Soldering Method Soldering Conditions Recommended
Condition Symbol
Infrared reflow Package peak temperature: 235˚C, Time: 30 seconds max. IR35-00-3
(at 210˚C or higher), Count: Three times or less
VPS Package peak temperature: 215˚C, Time: 40 seconds max. VP15-00-3
(at 200˚C or higher), Count: Three times or less
Wave soldering Solder bath temperature: 260˚C max., Time: 10 seconds max., Count: Once WS60-00-1
Preheating temperature: 120˚C max. (package surface temperature)
Partial heating
Pin temperature: 350
˚C
max., Time: 3 seconds max. (per pin row)
Caution Do not use different soldering methods together (except for partial heating).
Remark For soldering methods and conditions other than those recommended above, contact an NEC Electronics
sales representative.
(2)
µ
PD75P3018AGC-8BT: 80-pin plastic QFP (14 × 14 mm, resin thickness 1.4 mm)
Soldering Method Soldering Conditions Recommended
Condition Symbol
Infrared reflow Package peak temperature: 235˚C, Time: 30 seconds max. IR35-00-2
(at 210˚C or higher), Count: Twice or less
VPS Package peak temperature: 215˚C, Time: 40 seconds max. VP15-00-2
(at 200˚C or higher), Count: Twice or less
Wave soldering Solder bath temperature: 260˚C max., Time: 10 seconds max., Count: Once WS60-00-1
Preheating temperature: 120˚C max. (package surface temperature)
Partial heating
Pin temperature: 350
˚C
max., Time: 3 seconds max. (per pin row)
Caution Do not use different soldering methods together (except for partial heating).
Remark For soldering methods and conditions other than those recommended above, contact an NEC Electronics
sales representative.
µ
PD75P3018A
53
Data Sheet U11917EJ2V1DS
Table 11-1. Surface Mounting Type Soldering Conditions (2/3)
(3)
µ
PD75P3018AGK-BE9: 80-pin plastic TQFP (fine pitch) (12 × 12 mm, resin thickness 1.05 mm)
Soldering Method Soldering Conditions Recommended
Condition Symbol
Infrared reflow Package peak temperature: 235˚C, Time: 30 seconds max. IR35-107-3
(at 210˚C or higher), Count: Three times or less,
Exposure limit: 7 daysNote (after that, prebake at 125˚C for 10 to 72 hours)
VPS Package peak temperature: 215˚C, Time: 40 seconds max. VP15-107-3
(at 200˚C or higher), Count: Three times or less,
Exposure limit: 7 daysNote (after that, prebake at 125˚C for 10 to 72 hours)
Partial heating
Pin temperature: 350
˚C
max., Time: 3 seconds max. (per pin row)
Note After opening the dry pack, store it at 25˚C or less and 65% RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
Remark For soldering methods and conditions other than those recommended above, contact an NEC Electronics
sales representative.
(4)
µ
PD75P3018AGK-9EU: 80-pin plastic TQFP (fine pitch) (12 × 12 mm, resin thickness 1.00 mm)
Soldering Method Soldering Conditions Recommended
Condition Symbol
Infrared reflow Package peak temperature: 235˚C, Time: 30 seconds max. IR35-107-2
(at 210˚C or higher), Count: Twice or less,
Exposure limit: 7 daysNote (after that, prebake at 125˚C for 10 to 72 hours)
VPS Package peak temperature: 215˚C, Time: 40 seconds max. VP15-107-2
(at 200˚C or higher), Count: Twice or less,
Exposure limit: 7 daysNote (after that, prebake at 125˚C for 10 to 72 hours)
Partial heating
Pin temperature: 350
˚C
max., Time: 3 seconds max. (per pin row)
Note After opening the dry pack, store it at 25˚C or less and 65% RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
Remark For soldering methods and conditions other than those recommended above, contact an NEC Electronics
sales representative.
µ
PD75P3018A
54 Data Sheet U11917EJ2V1DS
Table 11-1. Surface Mounting Type Soldering Conditions (3/3)
(5)
µ
PD75P3018AGC-3B9-A: 80-pin plastic QFP (14 × 14 mm, resin thickness 2.7 mm)
µ
PD75P3018AGC-8BT-A: 80-pin plastic QFP (14 × 14 mm, resin thickness 1.4 mm)
Soldering Method Soldering Conditions Recommended
Condition Symbol
Infrared reflow Package peak temperature: 260˚C, Time: 60 seconds max. IR60-207-3
(at 220˚C or higher), Count: Three times or less,
Exposure limit: 7 daysNote (after that, prebake at 125˚C for 20 to 72 hours)
Wave soldering For details, contact an NEC Electronics sales representative.
Partial heating
Pin temperature: 350
˚C
max., Time: 3 seconds max. (per pin row)
Note After opening the dry pack, store it at 25˚C or less and 65% RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
Remarks 1. Products with “-A” at the end of the part number are lead-free products.
2. For soldering methods and conditions other than those recommended above, contact an NEC Electronics
sales representative.
(6)
µ
PD75P3018AGK-9EU-A: 80-pin plastic TQFP (fine pitch) (12 × 12 mm, resin thickness 1.00 mm)
Soldering Method Soldering Conditions Recommended
Condition Symbol
Infrared reflow Package peak temperature: 260˚C, Time: 60 seconds max. IR60-207-3
(at 220˚C or higher), Count: Three times or less,
Exposure limit: 7 daysNote (after that, prebake at 125˚C for 20 to 72 hours)
Partial heating
Pin temperature: 350
˚C
max., Time: 3 seconds max. (per pin row)
Note After opening the dry pack, store it at 25˚C or less and 65% RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
Remarks 1. Products with “-A” at the end of the part number are lead-free products.
2. For soldering methods and conditions other than those recommended above, contact an NEC Electronics
sales representative.
µ
PD75P3018A
55
Data Sheet U11917EJ2V1DS
APPENDIX A.
µ
PD75316B, 753017A AND 75P3018A FUNCTION LIST
Parameter
µ
PD75316B
µ
PD753017A
µ
PD75P3018A
Program memory Mask ROM Mask ROM One-time PROM
0000H-3F7FH 0000H-5FFFH 0000H-7FFFH
(16256 × 8 bits) (24576 × 8 bits) (32768 × 8 bits)
Data memory 000H-3FFH (1024 × 4 bits)
CPU 75X Standard 75XL CPU
Instruction When main system 0.95, 1.91, or 15.3
µ
s• 0.95, 1.91, 3.81, or 15.3
µ
s (at 4.19 MHz operation)
execution time clock is selected (at 4.19 MHz operation) • 0.67, 1.33, 2.67, or 10.7
µ
s (at 6.0 MHz operation)
When subsystem 122
µ
s (at 32.768 kHz operation)
clock is selected
Pin connection 29 to 32 P40 to P43 P40/D0 to P43/D3
34 to 37 P50 to P53 P50/D4 to P53/D7
44 P12/INT2 P12/INT2/TI1/TI2
47 P21 P21/PTO1
48 P22/PCL P22/PCL/PTO2
50 to 53 P30 to P33 P30/MD0 to P33/MD3
57 IC VPP
Stack SBS register None SBS.3 = 1; Mk I mode selection
SBS.3 = 0; Mk II mode selection
Stack area 000H-0FFH n00H-nFFH (n = 0-3)
Subroutine call instruction
2-byte stack Mk I mode: 2-byte stack
stack operation Mk II mode: 3-byte stack
Instruction BRA !addr1 Unavailable Mk I mode: unavailable
CALLA !addr1 Mk II mode: available
MOVT XA, @BCDE Available
MOVT XA, @BCXA
BR BCDE
BR BCXA
CALL !addr 3 machine cycles
Mk I mode: 3 machine cycles, Mk II mode: 4 machine cycles
CALLF !faddr 2 machine cycles
Mk I mode: 2 machine cycles, Mk II mode: 3 machine cycles
Mask option Yes None
Timer 3 channels: 5 channels:
• Basic interval timer • Basic interval timer/watchdog timer: 1 channel
: 1 channel • 8-bit timer/event counter: 3 channels
• 8-bit timer/event counter
(can be used as 16-bit timer/event counter, carrier generator,
: 1 channel timer with gate)
• Watch timer: 1 channel • Watch timer: 1 channel
µ
PD75P3018A
56 Data Sheet U11917EJ2V1DS
Parameter
µ
PD75316B
µ
PD753017A
µ
PD75P3018A
Clock output (PCL) Φ, 524, 262, 65.5 kHz Φ, 524, 262, 65.5 kHz
(Main system clock: (Main system clock: at 4.19 MHz operation)
at 4.19 MHz operation) Φ, 750, 375, 93.8 kHz
(Main system clock: at 6.0 MHz operation)
BUZ output (BUZ) 2 kHz • 2, 4, 32 kHz
(Main system clock: (Main system clock: at 4.19 MHz operation or
at 4.19 MHz operation) subsystem clock: at 32.768 kHz operation)
• 2.93, 5.86, 46.9 kHz
(Main system clock: at 6.0 MHz operation)
Serial interface 3 modes are available
• 3-wire serial I/O mode ... MSB/LSB can be selected for transfer first bit
• 2-wire serial I/O mode
• SBI mode
SOS register
Feedback resistor cut flag
None Provided
(SOS.0)
Sub-oscillator current None Provided
cut flag
(SOS.1)
Register bank selection register (RBS) None Yes
Standby release by INT0 Unavailable Available
Interrupt priority selection register (IPS) None Yes
Vectored interrupt External: 3, Internal: 3 External: 3, Internal: 5
Supply voltage VDD = 2.0 to 6.0 V VDD = 1.8 to 5.5 V
Operating ambient temperature TA = –40 to +85°C
Package • 80-pin plastic TQFP (fine pitch) (12 × 12 mm)
• 80-pin plastic QFP (14 × 14 mm)
µ
PD75P3018A
57
Data Sheet U11917EJ2V1DS
APPENDIX B. DEVELOPMENT TOOLS
The following development tools have been provided for system development using the
µ
PD75P3018A. In the 75XL
Series, the relocatable assembler common to series is used in combination with the device file of each type.
RA75X relocatable assembler Host machine Part No. (name)
OS Supply medium
PC-9800 Series MS-DOSTM 3.5" 2HD
µ
S5A13RA75X
Ver.3.30 to
Ver.6.2Note
IBM PC/ATTM Refer to "OS for 3.5" 2HC
µ
S7B13RA75X
or compatible IBM PCs"
Device file Host machine Part No. (name)
OS Supply medium
PC-9800 Series MS-DOS 3.5" 2HD
µ
S5A13DF753017
Ver.3.30 to
Ver.6.2Note
IBM PC/AT Refer to "OS for 3.5" 2HC
µ
S7B13DF753017
or compatible IBM PCs"
Note Ver. 5.00 or later includes a task swapping function, but this software is not able to use that function.
Remark Operation of the assembler and device file is guaranteed only when using the host machine and OS described
above.
µ
PD75P3018A
58 Data Sheet U11917EJ2V1DS
PROM Write Tools
Hardware PG-1500 This is a PROM programmer that can program single-chip microcontroller with PROM in stand
alone mode or under control of host machine when connected with supplied accessory board
and optional programmer adapter.
It can also program typical PROMs in capacities ranging from 256 K to 4 M bits.
PA-75P316BGC This is a PROM programmer adapter for the
µ
PD75P3018AGC-3B9.
It can be used when connected to a PG-1500.
PA-75P316BGK This is a PROM programmer adapter for the
µ
PD75P3018AGK-BE9.
It can be used when connected to a PG-1500.
PA-75P3018AGC-8BT
This is a PROM programmer adapter for the
µ
PD75P3018AGC-8BT.
It can be used when connected to a PG-1500.
PA-75P3018AGK-9EU
This is a PROM programmer adapter for the
µ
PD75P3018AGK-9EU.
It can be used when connected to a PG-1500.
Software PG-1500 controller Connects PG-1500 to host machine with serial and parallel interface and controls PG-1500 on
host machine.
Host machine Part No. (name)
OS Supply medium
PC-9800 Series MS-DOS 3.5" 2HD
µ
S5A13PG1500
Ver.3.30 to
Ver.6.2Note
IBM PC/AT Refer to "OS for 3.5" 2HD
µ
S7B13PG1500
or compatible IBM PCs"
Note Ver. 5.00 or later includes a task swapping function, but this software is not able to use that function.
Remark Operation of the PG-1500 controller is guaranteed only when using the host machine and OS described above.
µ
PD75P3018A
59
Data Sheet U11917EJ2V1DS
Debugging Tools
In-circuit emulators (IE-75000-R and IE-75001-R) are provided as program debugging tools for the
µ
PD75P3018A.
Various system configurations using these in-circuit emulators are listed below.
Hardware IE-75000-RNote 1 The IE-75000-R is an in-circuit emulator to be used for hardware and software debugging during
development of application systems using the 75X or 75XL Series products.
For development of the
µ
PD75P3018A, the IE-75000-R is used with optional emulation board
(IE-75300-R-EM) and emulation probe (EP-753018GC-R or EP-753018GK-R).
Highly efficient debugging can be performed when connected to host machine and PROM
programmer.
The IE-75000-R includes a connected emulation board (IE-75000-R-EM).
IE-75001-R The IE-75001-R is an in-circuit emulator to be used for hardware and software debugging during
development of application systems using the 75X or 75XL Series products.
The IE-75001-R is used with optional emulation board (IE-75300-R-EM) and emulation probe
(EP-753018GC-R or EP-753018GK-R).
Highly efficient debugging can be performed when connected to host machine and PROM
programmer.
IE-75300-R-EM This is an emulation board for evaluating application systems using the
µ
PD75P3018A.
It is used in combination with the IE-75000-R or IE-75001-R.
EP-753018GC-R This is an emulation probe for the
µ
PD75P3018AGC.
When being used, it is connected with the IE-75000-R or IE-75001-R and the IE-75300-R-EM.
EV-9200GC-80 It includes a 80-pin conversion socket (EV-9200GC-80) to facilitate connections with target
system.
EP-753018GK-R This is an emulation probe for the
µ
PD75P3018AGK.
When being used, it is connected with the IE-75000-R or IE-75001-R and the IE-75300-R-EM.
TGK-080SDW
Note 2
It includes a 80-pin conversion adapter (TGK-080SDW) to facilitate connections with target
system.
Software IE control program This program can control the IE-75000-R or IE-75001-R on a host machine when connected to
the IE-75000-R or IE-75001-R via an RS-232-C or Centronics interface.
Host machine Part No. (name)
OS Supply medium
PC-9800 Series MS-DOS 3.5" 2HD
µ
S5A13IE75X
Ver.3.30 to 5" 2HD
µ
S5A10IE75X
Ver.6.2Note 3
IBM PC/AT Refer to "OS for 3.5" 2HC
µ
S7B13IE75X
or compatible IBM PCs" 5" 2HC
µ
S7B10IE75X
Notes 1. This is a maintenance product.
2. This is a product of TOKYO ELETECH CORPORATION.
For further information, contact: Daimaru Kogyo, Ltd.
Tokyo Electronics Department (TEL +81-3-3820-7112)
Osaka Electronics 2nd Department (TEL +81-6-6244-6672)
3. Ver. 5.00 or later includes a task swapping function, but this software is not able to use that function.
Remark Operation of the IE control program is guaranteed only when using the host machine and OS described above.
µ
PD75P3018A
60 Data Sheet U11917EJ2V1DS
OS for IBM PCs
The following operating systems for the IBM PC are supported.
OS Version
PC DOSTM Ver.5.02 to Ver.6.3
J6.1/V to J6.3/V
MS-DOS Ver.5.0 to Ver.6.22
5.0/V to 6.2/V
IBM DOSTM J5.02/V
Caution Ver. 5.0 or later includes a task swapping function, but this software is not able to use that function.
µ
PD75P3018A
61
Data Sheet U11917EJ2V1DS
APPENDIX C. RELATED DOCUMENTS
The related documents indicated in this publication may include preliminary versions. However, preliminary versions are
not marked as such.
Device Related Documents
Document No.
Document Name
Japanese English
µ
PD753012A, 753016A, 753017A Data Sheet U11662J U11662E
µ
PD75P3018A Data Sheet U11917J U11917E
(This document)
µ
PD753017 User's Manual U11282J U11282E
µ
PD753017 Instruction Table IEM-5598
75XL Series Selection Guide U10453J U10453E
Development Tool Related Documents
Document No.
Document Name
Japanese English
Hardware IE-75000-R/IE-75001-R User's Manual EEU-846 EEU-1416
IE-75300-R-EM User's Manual U11354J U11354E
EP-753017GC/GK-R User's Manual EEU-967 EEU-1495
PG-1500 User's Manual U11940E U11940E
Software RA75X Assembler Package Operation U12622J U12622E
User's Manual Language U12385J U12385E
PG-1500 Controller User's Manual PC-9800 Series EEU-704 EEU-1291
(MS-DOS) base
IBM PC Series EEU-5008 U10540E
(PC DOS) base
Other Related Documents
Document No.
Document Name
Japanese English
SEMICONDUCTOR SELECTION GUIDE Products & Package (CD-ROM) X13769X
Semiconductor Device Mounting Technology Manual C10535J C10535E
Quality Grades on NEC Semiconductor Devices C11531J C11531E
NEC Semiconductor Device Reliability/Quality Control System C10983J C10983E
Guide to Prevent Damage for Semiconductor Devices Electrostatic C11892J C11892E
Discharge (ESD)
Guide to Microcontroller-Related Products by Third Parties U11416J
Caution The above related documents are subject to change without notice. For design purpose, etc., be sure
to use the latest documents.
µ
PD75P3018A
62 Data Sheet U11917EJ2V1DS
1
2
3
4
VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the
CMOS device stays in the area between V
IL
(MAX) and V
IH
(MIN) due to noise, etc., the device may
malfunction. Take care to prevent chattering noise from entering the device when the input level is
fixed, and also in the transition period when the input level passes through the area between V
IL
(MAX)
and V
IH
(MIN).
HANDLING OF UNUSED INPUT PINS
Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is
possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS
devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to V
DD
or
GND via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins
must be judged separately for each device and according to related specifications governing the device.
PRECAUTION AGAINST ESD
A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it when it has occurred. Environmental control must be
adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that
easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static
container, static shielding bag or conductive material. All test and measurement tools including work
benches and floors should be grounded. The operator should be grounded using a wrist strap.
Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for
PW boards with mounted semiconductor devices.
STATUS BEFORE INITIALIZATION
Power-on does not necessarily define the initial status of a MOS device. Immediately after the power
source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does
not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the
reset signal is received. A reset operation must be executed immediately after power-on for devices
with reset functions.
POWER ON/OFF SEQUENCE
In the case of a device that uses different power supplies for the internal operation and external
interface, as a rule, switch on the external power supply after switching on the internal power supply.
When switching the power supply off, as a rule, switch off the external power supply and then the
internal power supply. Use of the reverse power on/off sequences may result in the application of an
overvoltage to the internal elements of the device, causing malfunction and degradation of internal
elements due to the passage of an abnormal current.
The correct power on/off sequence must be judged separately for each device and according to related
specifications governing the device.
INPUT OF SIGNAL DURING POWER OFF STATE
Do not input signals or an I/O pull-up power supply while the device is not powered. The current
injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and
the abnormal current that passes in the device at this time may cause degradation of internal elements.
Input of signals during the power off state must be judged separately for each device and according to
related specifications governing the device.
NOTES FOR CMOS DEVICES
5
6
µ
PD75P3018A
63
Data Sheet U11917EJ2V1DS
Regional Information
Device availability
Ordering information
Product release schedule
Availability of related technical literature
Development environment specifications (for example, specifications for third-party tools and
components, host computers, power plugs, AC supply voltages, and so forth)
Network requirements
In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary
from country to country.
[GLOBAL SUPPORT]
http://www.necel.com/en/support/support.html
NEC Electronics America, Inc. (U.S.)
Santa Clara, California
Tel: 408-588-6000
800-366-9782
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Hong Kong
Tel: 2886-9318
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Tel: 02-558-3737
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J05.6
N
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Tel: 08-63 87 200
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Tel: 01908-691-133
Some information contained in this document may vary from country to country. Before using any NEC
Electronics product in your application, pIease contact the NEC Electronics office in your country to
obtain a list of authorized representatives and distributors. They will verify:
µ
PD75P3018A
MS-DOS is either a registered trademark or a trademark of Microsoft Corporation in the United States and/
or other countries.
IBM DOS, PC/AT, and PC DOS are trademarks of International Business Machines Corporation.
The information in this document is current as of August, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
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NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
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or any other liability arising from the use of such products. No license, express, implied or otherwise, is
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Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
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NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
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The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
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(Note)
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
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"Standard":
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"Specific":
These commodities, technology or software, must be exported in accordance
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