
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
@T
A
=
75 C
1N4933L thru 1N4937L
FEATURES
Fast switching for high efficiency
Low cost
Diffus ed junction
Low reverse leakage current
Low forward volt age dro p
High current capability
The plastic material carries UL recognition 94V-0
MECHANICAL DATA
Case : JEDEC A-405 molded plastic
Polarity : Color b and denotes cathode
Weight : 0.008 ounces, 0.22 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARA CT ERIST I CS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
200
140
200
50
35
50
100
70
100
1N4937L
600
420
600
400
280
400
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super im posed on rated load(JEDEC Method)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
1.0
30
T
J
Operating Temperature Range
-55 to +125 C
T
STG
Storage Temperature Range
-55 to + 150
Typical Thermal Resistance (Note 3)
R
0JA
50
C/W
C
J
Typical Junction
Capacitance (Note 2)
15
pF
I
R
Maximum DC Re verse Current
at Rated DC Blocking Voltage
@T
J
=100 C
@T
J
=25 C 5.0
100
uA
uA
V
F
Maximum forward Voltage at 1.0A DC
1.2
V
A
A
V
UNIT
V
V
Maximum Reverse Recovery Time (Note 1) T
RR
200
ns
SYMBOL
CHARACTERISTICS
C
FAST RECOVERY RECTIFIERS
REVERSE VOL TAGE
- 50
to
600
Volts
FORWARD CURRENT
- 1.0
Ampere
1N4936L1N4935L
1N4934L
1N4933L
All Dimensions in millim ete r
Max.
Min.
A-405
Dim.
A
D
C
B 25. 4 5.20
-
4.1 0
0.5 3
2.00 2.70
0.64
A
C
D
A
B
A-405
Maximum Reverse Recovery Time (Note 1) T
RR
130
ns
NOTES : 1.Measured with I
F
=1.0A,V
R
=30V,di/dt=50A/us.
2.Measured with I
F
=0.5A,I
R
=1A,I
RR
=0.25A.
3.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4.Thermal Resistance Junction to Ambient.
SEMICONDUCTOR
LITE-ON
REV. 2, 0 1 -Dec -2000 , K DBB01