PTFB183408SV
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 15 Rev. 03, 2014-03-07
15
20
25
30
35
-45
-40
-35
-30
-25
Efficiency (%)
&
ACPR (dBc )
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 8:1,
10 MHz carrier spacing, BW = 3.84 MHz
IMD Up IMD Low
0
5
10
-60
-55
-50
36 38 40 42 44 46 48 50 52
Drain
IMD
&
Average Output Power (dBm)
Efficiency
ACPR
b183408sv gr1
RF Characteristics
Single-carrier WCDMA Measurements (device with straight leads, combined outputs—tested in Infi neon test fi xture)
VDD = 30 V, IDQ = 2.65 A, POUT = 80 W average, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 16 17 — dB
Drain Efficiency ηD 24 25.5 — %
Intermodulation Distortion IMD — –35 –34 dBc
High Power RF LDMOS Field Effect Transistor
340 W, 30 V, 1805 – 1880 MHz
Description
The PTFB183408SV is a 340-watt LDMOS FET intended for use in
multi-standard cellular power amplifi er applications in the 1805 to
1880 MHz frequency band. Features include input and output match-
ing, high gain and thermally-enhanced package with earless fl ange.
Manufactured with Infi neon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB183408SV
Package H-37275G-6/2
Features
• Broadband internal input and output matching
• Wide video bandwidth
• Typical single-carrier WCDMA performance,
1880 MHz, 30 V
- Output power = 125 W
- Effi ciency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF probability
- ACPR @ 5 MHz = –37 dBc
• Increased negative gate-source voltage range for
improved performance in Doherty amplifi ers
• Capable of handling 10:1 VSWR @ 30 V, 300 W
(CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant
PTFB183408SV
Data Sheet 2 of 15 Rev. 03, 2014-03-07
RF Characteristics (cont.)
Single-carrier WCDMA Specifi cations (not subject to production test – verifi ed by design / characterization in Infi neon
test fi xture)
VDD = 30 V, IDQ = 2.6 A, IQ clipping, channel bandwidth = 3.84 MHz, Input signal PAR = 7.5 dB @ 0.01% CCDF probability
Characteristic Conditions Symbol 1805 MHz 1842 MHz 1880 MHz Unit
(Typ) (Typ) (Typ)
Gain POUT (AVG) = 49 dBm Gps 17.1 17.3 17.5 dB
P
OUT (AVG) = 51 dBm 17.0 17.15 17.4
Drain Efficiency POUT (AVG) = 49 dBm ηD 25 24.5 24 %
P
OUT (AVG) = 51 dBm 31 30 30
Output PAR at 0.01% POUT (AVG) = 49 dBm dB 6.5 6.5 6.5 dB
P
OUT (AVG) = 51 dBm 5.5 5.5 5.5
Adjacent Channel Power Ratio POUT (AVG) = 49 dBm ACPR –43 –42.5 –41 dBc
P
OUT (AVG) = 51 dBm –36 –35 –34
Two-tone Specifi cations (not subject to production test – verifi ed by design / characterization in Infi neon test fi xture)
VDD = 30 V, IDQ = 2.6 A, POUT = 310 W PEP, ƒ = 1880 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps — 17.5 — dB
Drain Efficiency ηD — 35 — %
Intermodulation Distortion IMD — 30 — dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — Ω
Operating Gate Voltage VDS = 30 V, IDQ = 2.6 A VGS 2.3 2.8 3.3 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Data Sheet 3 of 15 Rev. 03, 2014-03-07
PTFB183408SV
-55
-50
-45
-40
-35
-30
-25
36 38 40 42 44 46 48 50 52
IMD (dBc)
Average Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
=30V,I
DQ
= 2.6 A, 3GPP WCDMA,
PAR = 8:1, 10 MHz carrier spacing,
BW= 3.84 MHz
1880Lower
1880Upper
1842.5Lower
1842.5Upper
1805Lower
1805Upper
0
10
20
30
40
15
16
17
18
19
36 38 40 42 44 46 48 50 52
DrainEfficiency(%)
Gain (dB)
Average Output Power (dBm)
Two-carrier WCDMA 3GPP
V
DD
=30V,I
DQ
= 2.6 A, ƒ = 1880 MHz, 3GPP
WCDMA,PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84MHz
Efficiency
Gain
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 340 W CW) RθJC 0.2 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping
PTFB183408SV V2 R250 PTFB183408SVV2R250XTMA1 H-37275G-6/2, ceramic open-cavity, formed leads Tape & Reel, 250 pcs
Typical Performance (data taken in a production test fixture)
PTFB183408SV
Data Sheet 4 of 15 Rev. 03, 2014-03-07
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
1730 1767.5 1805 1842.5 1880 1917.5 1955
Frequency (MHz)
Two-toneBroadband
Gain, Efficiency & Return Loss
vs. Frequency
V
DD
=30V,I
DQ
=2.6A,P
OUT
=170W
Gain
Efficiency
RL
IMD3
Return Loss (dB), IMD (dBc)
Gain (dB) / Efficiency (%)
0
5
10
15
20
25
30
35
40
-65
-60
-55
-50
-45
-40
-35
-30
-25
39 41 43 45 47 49 51 53 55
Efficiency(%)
IMD (dBc)
Output Power, PEP (dBm)
Two-toneDrive-up
V
DD
=30V,I
DQ
=2.6A,
ƒ
1
= 1880 MHz, ƒ
2
= 1879 MHz
Efficienc
y
IMD3
0
10
20
30
40
50
14
15
16
17
18
19
40 42 44 46 48 50 52 54 56
Efficiency (%)
Gain (dB)
Output Power, PEP (dBm)
Two-toneDrive-up
V
DD
=30V,I
DQ
=2.6A,
ƒ
1
= 1880 MHz, ƒ
2
= 1879 MHz
Efficiency
Gain
0
10
20
30
40
50
14
15
16
17
18
19
39 41 43 45 47 49 51 53 55 57
Efficiency (%)
Gain (dB)
Output Power, PEP (dBm)
Two-toneDrive-up (over temp)
(P
OUT
-max 3rd order IMD @ -30dBc)
V
DD
=30V,I
DQ
=2.6A,
ƒ
1
= 1842.5 MHz, ƒ
2
= 1841.5 MHz
+85°C
+25°C
-30°C
Efficienc
y
Gain
Typical Performance (cont.)
Data Sheet 5 of 15 Rev. 03, 2014-03-07
PTFB183408SV
-60
-50
-40
-30
-20
39 41 43 45 47 49 51 53 55 57
IMD 3rd Order (dBc)
Output Power, PEP (dBm)
Two-toneDrive-upat
Selected Frequencies
V
DD
=30V,I
DQ
= 2.6 A, tone spacing = 1 MHz
1880MHz
1842.5MHz
1805MHz
-70
-60
-50
-40
-30
-20
39 41 43 45 47 49 51 53 55 57
IMD (dBc)
Output Power, PEP (dBm)
IntermodulationDistortion
vs. Output Power
V
DD
=30V,I
DQ
=2.6A,
ƒ
1
=1880MHz,ƒ
2
=1879MHz
3rd Order
7th
5th
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
1 10 100
IMD (dBc)
Two Tone Spacing (MHz)
IntermodulationDistortion
vs. Tone Spacing
ƒ = 1842.5 MHz, P
OUT
= 330 W (PEP),
V
DD
=30V,I
DQ
=2.6A
IMD7
IMD5
IMD3
IMD Lower
IMD Upper
0
5
10
15
20
25
30
35
-60
-55
-50
-45
-40
-35
-30
-25
36 38 40 42 44 46 48 50 52 54
Drain Efficiency (%)
ACP (dBc)
Average Output Power (dBm)
Single-carrier Drive-up, 1880 MHz
V
DD
=30V,I
DQ
= 2.6 A, ƒ = 1880 MHz,
3GPPWCDMA signal, PAR = 7.5:1,
BW= 3.84 MHz
ACP Up
Efficiency
ACP Low
Typical Performance (cont.)
PTFB183408SV
Data Sheet 6 of 15 Rev. 03, 2014-03-07
-60
-40
-20
0
20
40
0
4
8
12
16
20
36 38 40 42 44 46 48 50 52 54
Efficiency (%) / ACP (dBc)
Average Output Power (dBm)
Single-carrier Drive-up, 1880 MHz
V
DD
=30V,I
DQ
=2.6A,ƒ=1880MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW= 3.84 MHz
ACP
PARC @ .01% CCDF
Efficiency
Gain
PARC & PARC Gain (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
-5
0
5
10
15
20
25
30
35
1693 1768 1843 1918 1993
Frequency (MHz)
Single-carrier Broadband Performance
V
DD
=30V,I
DQ
=2.6A,P
OUT
=125W
Gain
Efficiency
RL
ACP
PARC
Gain & PARC (dB) / Efficiency (%)
Return Loss (dB) / ACP (dBc)
-60
-40
-20
0
20
40
0
4
8
12
16
20
36 38 40 42 44 46 48 50 52 54
Efficiency (%) / ACP(dBc)
Average Output Power (dBm)
Single-carrier Drive-up, 1842 MHz
V
DD
=30V,I
DQ
= 2.6 A, ƒ = 1842 MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW= 3.84 MHz
ACP
PARC @ .01% CCDF
Efficienc
y
Gain
PARC & PARC Gain (dB)
-60
-40
-20
0
20
40
0
4
8
12
16
20
36 38 40 42 44 46 48 50 52 54
Efficiency(%)/ ACP(dBc)
Average Output Power (dBm)
Single-carrier Drive-up, 1805 MHz
V
DD
=30V,I
DQ
= 2.6 A, ƒ = 1805 MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW= 3.84 MHz
ACP
PARC
@
.01% CCDF
Efficiency
Gain
PARC & PARC Gain (dB)
Typical Performance (cont.)
Data Sheet 7 of 15 Rev. 03, 2014-03-07
PTFB183408SV
0.1
0.3
0.2
0.1
0.2
0.1
0.3
0
.2
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
G
E
NE
R
AT
O
R
--->
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Z Source
1955 MHz 1730 MHz
1730 MHz
Z Load
1955 MHz
Z0 = 50 Ω
Z Source Z Load
G
D
GS
D
Broadband Circuit Impedance (combined leads)
Frequency Z Source Ω Z Load Ω
MHz R jX R jX
1730 1.86 –4.25 0.55 –2.78
1768 1.77 –4.06 0.54 –2.66
1805 1.68 –3.88 0.53 –7.54
1843 1.61 –3.70 0.52 –2.43
1880 1.56 –3.53 0.51 –2.32
1918 1.51 –3.37 0.51 –2.21
1955 1.47 –3.22 0.5 –2.11
See next page for reference circuit information
PTFB183408SV
Data Sheet 8 of 15 Rev. 03, 2014-03-07
Reference Circuit
Reference circuit input schematic for ƒ = 1880 MHz
ε
= 3. 66
H = 20 mil
RO/RO4350B1
r
TL114 TL113 TL152
TL115
TL116
TL117
TL118
TL119
TL120
C801
1000 pF
C802
1000 pF
C803
1000 pF
C101
4700000 pF
C102
100000 pF
TL133
TL134
TL135
TL136
TL137
TL138
TL139
TL140
TL141
TL101
TL102
TL103
TL104
TL105
TL106
TL107
TL108
TL109
TL110
TL111
TL112
TL153 TL154
TL155 TL156 TL157
TL158
TL159
TL121
TL122
TL123
TL124
TL125
TL126
TL127
TL128
TL129
TL130
TL131
TL132
12
3
TL162
1
2
3
TL163
1
2
3
TL164
12
3
TL165
12
3
TL166
12
3
TL167
1
2
3
TL168
1
2
3
TL142
1
2
3
TL143
1
2
3
TL144
12
3
TL145
TL146 TL147
TL148
TL149
TL150
TL151
C107
1.7 pF
C108
10 pF
C109
10 pF
R804
10 Ohm
C110
4700000 pF
R102
10 Ohm
C111
10 pF R103
10 Ohm
R104
10 Ohm
C112
10 pF
R101
10 Ohm
C104
10 pF
C105
100000 pF
TL160
R801
1200 Ohm
R802
1300 Ohm
R803
10 Ohm
1
2
3
TL161
PORT
3
PORT
2
PORT
1
In
Out
NC
NC
1
23 4
567
8
S3
S
C
B
E
1
2
3
4
S2
3
S1
TL175
TL176 TL174
TL173
C103
0.7 pF
R105
10 Ohm
12
3
TL169
TL170
12
3
TL171 TL172
C106
1.7 pF
RF IN
GATE DUT
GATE DUT
b183408sv_bdin_06-2 8-2012
Data Sheet 9 of 15 Rev. 03, 2014-03-07
PTFB183408SV
Reference Circuit (cont.)
Reference circuit output schematic for ƒ = 1880 MHz
ε
= 3. 66
H = 20 mil
RO/RO4350B1
r
TL212
TL213
TL214
TL215
TL216
1
2
3
4
TL217
1
2
3
4
TL218
1
2
3
TL223
1
2
3
TL224
TL225
TL226
TL227
TL228
TL229
TL230
TL231
TL232
TL233
DCVS
DCVS
C204
10000000 pF
C203
10000000 pF
TL206
TL207
TL208
TL209
TL210 TL211
C207
1000000 pF
12
3
TL237
C208
0.4 pF
C209
1.8 pF
C210
1.3 pF
C211
1.3 pF
C212
1.3 pF
C213
1.3 pF
TL238
TL239
TL240
1
2
3
4
TL219
12
3
TL220
12
3
TL221
1
2
3
TL222
PORT
2
C215
1000000 pF
C214
1000000 pF
C216
10 pF
TL201
TL202
C201
1.4 pF
C202
10000000 pF
TL203
1
2
3
TL204
TL205
1
2
3
TL234
C205
2200000 pF
C206
2200000 pF
1
2
3
TL235
TL236
PORT
4
PORT
3
PORT
1
VDD
VDD
RF OUT
DRAIN DUT
VDD
VDD
PTFB183408SV
Data Sheet 10 of 15 Rev. 03, 2014-03-07
Reference Circuit (cont.)
Reference Circuit Assembly
DUT PTFB183408SV
Test Fixture Part No. LTN/PTFB183408SV
PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66
Find Gerber fi les for this test fi xture on the Infi neon Web site at http://www.infi neon.com/rfpower
Electrical Characteristics at 1880 MHz
Transmission
Line
Electrical
Characteristics
Dimensions: mm Dimensions: mils
Input
TL101, TL129 0.017 λ, 53.11 ΩW = 1.02, L = 1.65 W = 40, L = 65
TL102, TL127 0.002 λ, 62.65 ΩW = 0.76, L = 0.20 W = 30, L = 8
TL103, TL139,
TL126, TL159
0 λ, 40.91 ΩW = 1.52, L = 0.03 W = 60, L = 1
TL104 0.212 λ, 62.65 ΩW = 0.76, L = 20.20 W = 30, L = 799
TL105, TL153 0.008 λ, 28.26 ΩW = 2.54, L = 0.76 W = 100, L = 30
TL106 0.005 λ, 62.65 ΩW = 0.76, L = 0.51 W = 30, L = 20
TL107, TL157 0.018 λ, 7.86 ΩW = 11.43, L = 5.36 W = 450, L = 211
TL108, TL172 0.004 λ, 7.86 ΩW = 11.43, L = 0.34 W = 450, L = 13
TL109, TL170 0.002 λ, 7.86 ΩW = 11.43, L = 0.20 W = 450, L = 8
TL110 0.022 λ, 31.94 ΩW = 2.16, L = 2.03 W = 85, L = 80
TL111 0.029 λ, 48.71 ΩW = 1.17, L = 2.71 W = 46, L = 107
TL112 0 λ, 62.65 ΩW = 0.76, L = 0.03 W = 30, L = 1
TL113 0.016 λ, 48.71 ΩW = 1.17, L = 1.55 W = 46, L = 61
TL114 0.029 λ, 48.71 ΩW = 1.17, L = 2.743 W = 46, L = 108
TL121, TL141 0.014 λ, 33.39 ΩW = 2.03, L = 1.27 W = 80, L = 50
TL122, TL123 0 λ, 62.65 ΩW = 0.76, L = 0.00 W = 30, L = 0
TL124, TL156 0.014 λ, 16.84 ΩW = 4.83, L = 1.27 W = 190, L = 50
TL125 0.013 λ, 62.65 ΩW = 0.76, L = 1.27 W = 30, L = 50
TL128, TL130 0.013 λ, 53.11 ΩW = 1.02, L = 1.26 W = 40, L = 50
TL131, TL138 0.015 λ, 53.11 ΩW = 1.02, L = 1.40 W = 40, L = 55
TL132, TL137 0 λ, 33.39 ΩW = 2.03, L = 0.03 W = 80, L = 1
TL133, TL136 0.080 λ, 53.11 ΩW = 1.02, L = 7.62 W = 40, L = 300
TL134, TL135 0.008 λ, 53.11 ΩW = 1.02, L = 0.76 W = 40, L = 30
TL140, TL158 0.015 λ, 62.65 ΩW = 0.76, L = 1.42 W = 30, L = 56
TL142, TL144 0.011 λ, 62.65 ΩW1 = 0.76, W2 = 0.76, W3 = 1.02 W1 = 30, W2 = 30, W3 = 40
TL143, TL168,
TL163, TL164
0.016 λ, 62.65 ΩW1 = 0.76, W2 = 0.76, W3 = 1.52 W1 = 30, W2 = 30, W3 = 60
TL145 0.008 λ, 48.71 ΩW1 = 1.17, W2 = 1.17, W3 = 0.76 W1 = 46, W2 = 46, W3 = 30
TL154, TL155 0.006 λ, 16.84 ΩW = 4.83, L = 0.51 W = 190, L = 20
TL160 0.004 λ, 62.65 ΩW = 0.76, L = 0.40 W = 30, L = 16
table continued on page 11
Data Sheet 11 of 15 Rev. 03, 2014-03-07
PTFB183408SV
Electrical Characteristics at 1880 MHz
Transmission
Line
Electrical
Characteristics
Dimensions: mm Dimensions: mils
Input (cont.)
TL161 0.024 λ, 28.26 ΩW1 = 2.54, W2 = 2.54, W3 = 2.16 W1 = 100, W2 = 100, W3 = 85
TL162, TL165 0.012 λ, 7.86 ΩW1 = 11.43, W2 = 11.43, W3 = 1.026 W1 = 450, W2 = 450, W3 = 40
TL166, TL167 0.021 λ, 53.11 ΩW1 = 1.03, W2 = 1.02, W3 = 2.03 W1 = 40, W2 = 40, W3 = 80
TL169, TL171 0.009 λ, 7.86 ΩW1 = 11.43, W2 = 11.43, W3 = 0.76 W1 = 450, W2 = 450, W3 = 30
TL173, TL174 0.044 λ, 7.13 ΩW = 12.70, L = 3.79 W = 500, L = 149
Output
TL201 (taper) 0.012 λ, 12.04 Ω /
34.02 Ω
W1 = 7.11, W2 = 1.98, L = 1.02 W1 = 280, W2 = 78, L = 40
TL202 (taper) 0.009 λ, 5.75 Ω /
7.78 Ω
W1 = 16.00, W2 = 11.56, L = 0.76 W1 = 630, W2 = 455, L = 30
TL203 0.020 λ, 20.50 ΩW = 3.81, L = 1.78 W = 150, L = 70
TL204 0.020 λ, 20.50 ΩW1 = 3.81, W2 = 3.81, W3 = 1.78 W1 = 150, W2 = 150, W3 = 70
TL205 0.003 λ, 20.50 ΩW = 3.81, L = 0.25 W = 150, L = 10
TL206 (taper) 0.024 λ, 3.59 Ω /
12.04 Ω
W1 = 26.37 W2 = 16.00, L = 2.03 W1 = 1038, W2 = 630, L = 80
TL208, TL209,
TL213, TL214,
TL239, TL240
0.000 λ, 141.78 ΩW = 0.03, L = 0.03 W = 1, L = 1
TL210 0.057 λ, 3.59 ΩW = 26.37, L = 4.80 W = 1038, L = 189
TL211 0.045 λ, 34.02 ΩW = 1.98, L = 4.12 W = 78, L = 162
TL212 0.005 λ, 46.18 ΩW = 1.27, L = 0.43 W = 50, L = 17
TL215 0.067 λ, 46.18 ΩW = 1.27, L = 6.03 W = 50, L = 248
TL216 0.014 λ, 28.26 ΩW = 2.54, L = 1.27 W = 100, L = 50
TL217 0.000 λ, 5.75 ΩW1 = 16.00, W2 = 0.03, W3 = 16.00, W4 = 0.03 W1 = 630, W2 = 1, W3 = 630, W4 = 1
TL218 0.000 λ, 7.78 ΩW1 = 11.56, W2 = 0. 03, W3 = 11.56, W4 = 0.03 W1 = 455, W2 = 1, W3 = 455, W4 = 1
TL219 0.000 λ, 12.04 ΩW1 = 7.11, W2 = 0. 03, W3 = 7.11, W4 = 0.025 W1 = 280, W2 = 1, W3 = 280, W4 = 1
TL220, TL221,
TL223, TL224
0.042 λ, 20.50 ΩW1 = 3.81, W2 = 3.81, W3 = 3.81 W1 = 150, W2 = 150, W3 = 150
TL222 0.020 λ, 20.50 ΩW1 = 3.81, W2 = 3.81, W3 = 1.78 W1 = 150, W2 = 150, W3 = 70
TL225, TL227 0.023 λ, 20.50 ΩW = 3.81, L = 2.08 W = 150, L = 82
TL226, TL228 0.067 λ, 20.50 ΩW = 3.81, L = 6.02 W = 150, L = 237
TL229, TL232 0.028 λ, 20.50 ΩW = 3.81, L = 2.54 W = 150, L = 100
TL230 0.003 λ, 20.50 ΩW = 3.81, L = 0.25 W = 150, L = 10
TL231, TL233 0.099 λ, 20.50 ΩW = 3.81, L = 8.92 W = 150, L = 351
TL234, TL235 0.020 λ, 20.50 ΩW1 = 3.81, W2 = 3.81, W3 = 1.78 W1 = 150, W2 = 150, W3 = 70
TL236 0.020 λ, 20.50 ΩW = 3.81, L = 1.78 W = 150, L = 70
TL237 0.022 λ, 46.18 ΩW1 = 1.27, W2 = 1.27, W3 = 2.03 W1 = 50, W2 = 50, W3 = 80
TL238 (taper) 0.009 λ, 7.78 Ω /
12.04 Ω
W1 = 11.56, W2 = 7.112, L = 0.79 W1 = 455, W2 = 280, L = 31
Reference Circuit (cont.)
PTFB183408SV
Data Sheet 12 of 15 Rev. 03, 2014-03-07
Reference Circuit (cont.)
Reference circuit assembly diagram (not to scale)
b183408sv_CD_03-07-2014
RO4350, .020 (60)
R803
C801
C802
C803
R103
RF_OUT
RF_IN
PTFB183408_IN_02
PTFB183408_OUT_02
RO4350, .020 (60)
R802
S1
C207
C204
C215
C206
C209
C211
C213
C208
C216
C201
C210
C212
C214
C205
C202
C203
+
10 μF
C104
R101
C101
C105
C103
C112
C108
+
R105
R801
S3
R804
C109
C102
C110
S2
C111
+
10 μF
R104
C107
C106
VDD
VDD
VDD
R102
Data Sheet 13 of 15 Rev. 03, 2014-03-07
PTFB183408SV
Reference Circuit (cont.)
Components Information
Component Description Suggested Manufacturer P/N
Input
C101, C110 Chip capacitor, 4.7 µF Panasonic Electronic Components ECS-T1CY475R
C102, C105 Chip capacitor, 0.1 µF Panasonic Electronic Components ECJ-3VB1H104K
C103 Chip capacitor, 0.7 pF ATC ATC100B0R7BW500XB
C104, C108, C109 Chip capacitor, 10 pF ATC ATC100B100JW500XB
C106, C107 Chip capacitor, 1.7 pF ATC ATC100A1R7BW150XB
C111, C112 Chip capacitor, 10 pF ATC ATC100A100JW500XB
C801, C802, C803 Chip capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K
R101, R102, R105, R803, Resistor, 10 Ω Panasonic Electronic Components ERJ-8GEYJ100V
R804
R103, R104 Resistor, 10 Ω Panasonic Electronic Components ERJ-3GEYJ100V
R801 Resistor, 1200 Ω Panasonic Electronic Components ERJ-3GEYJ122V
R802 Resistor, 1300 Ω Panasonic Electronic Components ERJ-3GEYJ132V
S1 Potentiometer, 2k Ω Bourns Inc 3224W-1-202E
S2 Transistor Infi neon Technologies BCP56
S3 Voltage Regulator Texas Instruments LM7805
Output
C201 Chip capacitor, 1.4 pF ATC ATC100B1R4BW500XB
C202, C207 Chip capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T
C203, C204 Tantalum capacitor, 10 µF AVX Corporation TPSE106K050R0400
C205, C206 Chip capacitor, 2.2 µF TDK Corporation C4532X7R1H225M160KA
C208 Chip capacitor, 0.4 pF ATC ATC100B0R4BW500XB
C209 Chip capacitor, 1.8 pF ATC ATC100B1R8BW500XB
C210, C211, C212, C213 Chip capacitor, 1.3 pF ATC ATC100B1R3BW500XB
C214, C215 Chip capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA
C216 Chip capacitor, 10 pF ATC ATC100B100JW500XB
Pinout Diagram
Pin Description
V1 VDD Device 1
V2 VDD Device 2
G1 Gate Device 1
G2 Gate Device 2
D1 Drain Device 1
D2 Drain Device 2
S Source (fl ange)
S
V2
V1
D2D1
G1 G2 H-34275G-6-2_gw_pd_10-10-2012
PTFB183408SV
Data Sheet 14 of 15 Rev. 03, 2014-03-07
Find the latest and most complete information about products and packaging at the Infi neon Internet page
http://www.infi neon.com/rfpower
Package Outline Specifications
Package H-37275G-6/2 with Formed Leads
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. D1, D2 – drains; G1, G2 – gates; S – source; V1, V2 – VDD.
5. Lead thickness: 0.10 + 0.076/–0.025 mm [0.004+0.003/–0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
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Data Sheet 15 of 15 Rev. 03, 2014-03-07
Edition 2014-03-07
Published by
Infi neon Technologies AG
85579 Neubiberg, Germany
© 2014 Infi neon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infi neon Technologies Offi ce (www.infi neon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infi neon Technologies Offi ce.
Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infi neon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFB183408SV V2
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision)
01 2012-03-23 Advance All Data Sheet refl ects advance specifi cation for product development
02 2012-06-28 Production All Data Sheet refl ects released product specifi cation
03 2014-03-07 Production All
1
3
12
13
Updated V1 to V2, updated package & package related drawings throughout
added statement "device with straight leads" into single-carrier WCDMA measurement table
updated ordering table
updated reference design circuit - corrected mislabels of R102, C102, C110
Removed R805, corrected R801, R802, R803 in component table. updated pinout diagram to
show gullwing version