Ver. DEDPublication date: March 2014 1
DSA5001
Silicon PNP epitaxial planar type
For general amplification
Complementary to DSC5001
DSA2001 in SMini3 type package
Features
High forward current transfer ratio hFE with excellent linearity
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: A1
Packaging
DSA5001×0L
Embossed type (Thermo-compression sealing): 3
000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO –60 V
Collector-emitter voltage (Base open) VCEO –50 V
Emitter-base voltage (Collector open) VEBO –7 V
Collector current IC–100 mA
Peak collector current ICP –200 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Operating ambient temperature Topr –40 to +85 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = –10 mA, IE = 0 –60 V
Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V
Emitter-base voltage (Collector open) VEBO IE = –10 mA, IC = 0 –7 V
Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 – 0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCE = –10 V, IB = 0 –100 mA
Forward current transfer ratio *1hFE VCE = –10 V, IC = –2 mA 210 460
Collector-emitter saturation voltage VCE(sat) IC = –100 mA, IB = –10 mA – 0.2 – 0.5 V
Transition frequency fTVCE = –10 V, IC = –2 mA 150 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = –10 V, IE = 0, f = 1 MHz 2pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*1: Rank classification
Code R S 0
Rank R S No-rank
hFE 210 to 340 290 to 460 210 to 460
Marking Symbol A1R A1S A1
Product of no-rank is not classified and have no marking symbol for rank.
Unit: mm
1: Base
2: Emitter
3: Collector
Panasonic SMini3-F2-B
JEITA SC-85
Code
Ver. DED
DSA5001
2
PC Ta IC VCE hFE IC
VCE(sat) IC IC VBE Cob VCB
00 20016040 12080
50
200
150
100
250
DSA5001_PC-Ta
Ambient temperature Ta (°C)
Collector power dissipation PC (mW)
0
0 −12 −2 −10 −4 −8 −6
−120
−100
−80
−60
−40
−20
DSA5001_IC-VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Ta = 25°C IB = −600 µA
−500 µA
−400 µA
−300 µA
−200 µA
−100 µA
0
− 0.1
600
500
400
300
200
100
−1 −10
−100
DSA5001_hFE-IC
Forward current transfer ratio hFE
Collector current IC (mA)
25°C
−40°C
Ta = 85°C
VCE = −10 V
− 0.01
− 0.1
− 0.1
−1
−10
−1 −10 −100
DSA5001_VCEsat-IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
25°C
−40°C
Ta = 85°C
IC / IB = 10
0
0 −1.2 − 0.2 −1.0 − 0.4 − 0.8 − 0.6
−120
−100
−80
−60
−40
−20
DSA5001_IC-VBE
Collector current IC (mA)
Base-emitter voltage VBE (V)
−40°C
25°C
Ta = 85°C
VCE = −10 V
0
−1
4.0
3.0
2.0
1.0
−10 −100
DSA5001_Cob-VCB
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
IE = 0
f = 1 MHz
Ta = 25°C
fT IC
0
− 0.1
250
200
150
100
50
−1 −10 −100
DSA5001_fT-IC
Transition frequency fT (MHz)
Collector current IC (mA)
VCE = −10 V
Ta = 25°C
Ver. DED
DSA5001
3
SMini3-F2-B Unit: mm
Land Pattern (Reference) (Unit: mm)
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semiconductors described in this book
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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