TIP125 - FAIRCHILD SEMICONDUCTOR

November, 2014 − Rev. 9

1Publication Order Number:

TIP120/D

TIP120, TIP121, TIP122

(NPN); TIP125, TIP126,

TIP127 (PNP)

Plastic Medium-Power

Complementary Silicon

Transistors

Designed for general−purpose amplifier and low−speed switching

applications.

Features

•High DC Current Gain −

hFE = 2500 (Typ) @ IC

= 4.0 Adc

•Collector−Emitter Sustaining Voltage − @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125

= 80 Vdc (Min) − TIP121, TIP126

= 100 Vdc (Min) − TIP122, TIP127

•Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

= 4.0 Vdc (Max) @ IC = 5.0 Adc

•Monolithic Construction with Built−In Base−Emitter Shunt Resistors

•Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220AB

CASE 221A

STYLE 1

MARKING

DIAGRAM

DARLINGTON

5 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100 VOLTS, 65 WATTS

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123

TIP12x = Device Code

x = 0, 1, 2, 5, 6, or 7

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

TIP12xG

AYWW

See detailed ordering and shipping information on page 3 of

this data sheet.

ORDERING INFORMATION

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

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MAXIMUM RATINGS

Rating Symbol

TIP120,

TIP125

TIP121,

TIP126

TIP122,

TIP127 Unit

Collector−Emitter Voltage VCEO 60 80 100 Vdc

Collector−Base Voltage VCB 60 80 100 Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current −Continuous

−Peak

IC5.0

8.0

Adc

Base Current IB120 mAdc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD65

0.52

W/°C

Total Power Dissipation @ TA = 25°C

Derate above 25°C

PD2.0

0.016

W/°C

Unclamped Inductive Load Energy (Note 1) E 50 mJ

Operating and Storage Junction, Temperature Range TJ, Tstg –65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.92 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 100 mAdc, IB = 0) TIP120, TIP125

TIP121, TIP126

TIP122, TIP127

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP120, TIP125

(VCE = 40 Vdc, IB = 0) TIP121, TIP126

(VCE = 50 Vdc, IB = 0) TIP122, TIP127

ICEO

−

0.5

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) TIP120, TIP125

(VCB = 80 Vdc, IE = 0) TIP121, TIP126

(VCB = 100 Vdc, IE = 0) TIP122, TIP127

ICBO

−

0.2

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO −2.0 mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc)

(IC = 3.0 Adc, VCE = 3.0 Vdc)

hFE 1000

1000

−

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 12 mAdc)

(IC = 5.0 Adc, IB = 20 mAdc)

VCE(sat)

−

2.0

4.0

Vdc

Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) VBE(on) −2.5 Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0 − −

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127

TIP120, TIP121, TIP122

Cob −

−

300

200

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

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Figure 1. Darlington Circuit Schematic

BASE

EMITTER

COLLECTOR

≈8.0 k ≈120

BASE

EMITTER

COLLECTOR

≈8.0 k ≈120

ORDERING INFORMATION

Device Package Shipping

TIP120 TO−220 50 Units / Rail

TIP120G TO−220

(Pb−Free)

50 Units / Rail

TIP121 TO−220 50 Units / Rail

TIP121G TO−220

(Pb−Free)

50 Units / Rail

TIP122 TO−220 50 Units / Rail

TIP122G TO−220

(Pb−Free)

50 Units / Rail

TIP125 TO−220 50 Units / Rail

TIP125G TO−220

(Pb−Free)

50 Units / Rail

TIP126 TO−220 50 Units / Rail

TIP126G TO−220

(Pb−Free)

50 Units / Rail

TIP127 TO−220 50 Units / Rail

TIP127G TO−220

(Pb−Free)

50 Units / Rail

00 20 40 60 80 100 120 160

Figure 2. Power Derating

T, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

140

4.0

2.0

1.0

3.0

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

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Figure 3. Switching Times Test Circuit

5.0

0.1

Figure 4. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

2.0

1.0

0.5

0.05

0.2 0.3 0.5 0.7 1.0 2.0 3.0 10

0.3

0.7

PNP

NPN

td @ VBE(off) = 0

approx

+8.0 V

approx

-12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 ms

51 D1

+4.0 V

VCC

-30 V

TUT

≈ 8.0 k ≈ 120

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse all polarities.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

3.0

0.2

0.1

0.07

5.0 7.0

Figure 5. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZqJC(t) = r(t) RqJC

RqJC = 1.92°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

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1.0

Figure 6. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.02

2.0 5.0 20 50 100

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

0.5

IC, COLLECTOR CURRENT (AMP)

TJ = 150°Cdc

1ms

100 ms

0.2

0.1

0.05

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

5ms

3.0 7.0 30 70

TIP120, TIP125

TIP121, TIP126

TIP122, TIP127

500 ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150°C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 150°C. TJ(pk) may be calculated from the data in Figure 5.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown

300

0.1

VR, REVERSE VOLTAGE (VOLTS)

30 2.0 5.0 10 20 100500.2 0.5 1.0

C, CAPACITANCE (pF)

100

TJ = 25°C

Cib

Cob

PNP

NPN

Figure 7. Small−Signal Current Gain

10,000

1.0

f, FREQUENCY (kHz)

20 50 100 200 10002.0 5.0 10

3000

500

100

TC = 25°C

VCE = 4.0 Vdc

IC = 3.0 Adc

1000

PNP

NPN

Figure 8. Capacitance

500

hfe , SMALL-SIGNAL CURRENT GAIN

5000

2000

300

200

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

20,000

0.1

Figure 9. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

200 0.2 0.3 0.5 1.0 2.0 10

500

1000

300

hFE, DC CURRENT GAIN

2000

3000

VCE = 4.0 V

0.7 3.0

NPN

TIP120, TIP121, TIP122

PNP

TIP125, TIP126, TIP127

Figure 10. Collector Saturation Region

3.0

0.3

IB, BASE CURRENT (mA)

1.0 0.5 1.0 2.0 10 30

1.8

IC = 2.0 A

TJ = 25°C

4.0 A

2.2

2.6

0.7 5.0

3.0

0.1

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 1.0 2.0 5.0 10

2.5

2.0

1.5

1.0

0.5

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 11. “On” Voltages

VBE @ VCE = 4.0 V

3.0

10,000

5000 TJ = 150°C

25°C

-55°C

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

VCE = 4.0 V

TJ = 150°C

25°C

-55°C

1.4

6.0 A

IB, BASE CURRENT (mA)

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 4.0 V

5.0 7.0

20,000

0.1

200 0.2 0.3 0.5 1.0 2.0 10

500

1000

300

2000

3000

0.7 3.0

10,000

5000

5.0 7.0

7000

700

3.0 7.0

3.0

0.3

1.0 0.5 1.0 2.0 10 30

1.8

2.2

2.6

0.7 5.0 20

1.4

3.0 7.0

IC = 2.0 A 4.0 A 6.0 A

0.7 7.0

3.0

0.1 0.2 0.3 0.5 1.0 2.0 5.0 10

2.5

2.0

1.5

1.0

0.5 3.00.7 7.0

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

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PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AH

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.415 9.66 10.53

C0.160 0.190 4.07 4.83

D0.025 0.038 0.64 0.96

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.024 0.36 0.61

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets

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Europe, Middle East and Africa Technical Support:

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Phone: 81−3−5817−1050

TIP120/D

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