2731GN-220V 220 Watts - 50 Volts, 200 s, 10% S-Band Radar 2700 - 3100 MHz GENERAL DESCRIPTION The 2731GN-220V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 10 dB gain, 220 Watts of pulsed RF output power at 200uS pulse width, 10% duty factor across the 2700 to 3100 MHz band. This hermetically sealed transistor is designed for SBand Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. CASE OUTLINE 55-QP Common Source Market Application - 2731GN-220V is designed for S-Band Pulsed Radar ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C Maximum Voltage and Current Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) 650 W 150 V -8 to +0 V Maximum Temperatures Storage Temperature (TSTG) -55 to +125 C Operating Junction Temperature +250 C ELECTRICAL CHARACTERISTICS @ 25C Symbol Characteristics Test Conditions Min Typ Max Units Pout Output Power Pin=22.5W Freq=2700,2900,3100MHz 220 245 W Gp Power Gain Pin=22.5W Freq=2700,2900,3100MHz 9.8 10.4 dB d Drain Efficiency Pin=22.5W Freq=2700,2900,3100MHz 40 50 % Dr Droop Pin=22.5W Freq=2700,2900,3100MHz 0.8 VSWR-T Load Mismatch Tolerance Pout=220W, Freq= 2900MHz 3:1 jc Thermal Resistance Pulse Width=200uS, Duty=10% 0.33 dB C/W Bias Condition: Vdd=+50V, Idq=150mA constant current (Vgs= -2.0 ~ -4.5V typical) FUNCTIONAL CHARACTERISTICS @ 25C ID(Off) Drain leakage current VgS = -8V, VD = 150V 30 mA IG(Off) Gate leakage current VgS = -8V, VD = 0V 8 mA Export Classification: ECCN 3A001.b.3.a.3 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the Santa Clara factory at (408) 986-8031 for the latest information. 2731GN-220V 220 Watts - 50 Volts, 200 s, 10% S-Band Radar 2700 - 3100 MHz TYPICAL BROAD BAND PERFORMACE DATA Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB) Droop (dB) 2700 MHz 22.5 246 1.24 -8 43 10.4 0.6 2900 MHz 22.5 280 1.17 -14 51 11.0 0.5 3100 MHz 22.5 258 1.08 -7 51 10.6 0.4 Model 2731GN-220V Vdd = 50V, 200uS, 10% 350 24 300 Pout (W) 200 16 150 100 Gain (dB) 20 250 12 50 0 8 12 14 16 18 20 22 Pin (W) 24 2.7GHz 26 2.9GHz 3.1GHz Model 2731GN-220V Vdd = 50V, 200uS, 10% 70% Efficiency (%) 60% 50% 40% 30% 20% 10% 0% 12 14 16 18 20 Pin (W) 22 24 2.7GHz 2.9GHz 26 3.1GHz For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the Santa Clara factory at (408) 986-8031 for the latest information. 2731GN-220V 220 Watts - 50 Volts, 200 s, 10% S-Band Radar 2700 - 3100 MHz TRANSISTOR IMPEDANCE INFORMATION Note: ZSource is looking into the input circuit ZLoad is looking into the output circuit Impedance Data Freq (GHz) ZSource ZLoad 2.7 20.15 - j07.78 2.27 - j3.04 2.9 17.90 - j11.64 2.23 - j2.44 3.1 14.50 - j13.29 2.23 - j1.87 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the Santa Clara factory at (408) 986-8031 for the latest information. 2731GN-220V 220 Watts - 50 Volts, 200 s, 10% S-Band Radar 2700 - 3100 MHz TEST CIRCUIT DIAGRAM Board Material: Roger Duriod 6002 @ 20 Mil Thickness, Er=2.9 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the Santa Clara factory at (408) 986-8031 for the latest information. 2731GN-220V 220 Watts - 50 Volts, 200 s, 10% S-Band Radar 2700 - 3100 MHz 55-QP PACKAGE DIMENSION Dimension A B C D E F G H I J K L M N Min (mil) 370 498 700 830 1030 101 151 385 130 003 135 105 085 065 Min (mm) 9.40 12.65 17.78 21.08 26.16 2.56 3.84 9.78 3.30 .076 3.43 2.67 2.16 1.65 Max (mil) 372 500 702 832 1032 102 152 387 132 004 137 107 86 66 Max (mm) 9.44 12.7 17.83 21.13 26.21 2.59 3.86 9.83 3.35 0.10 3.48 2.72 2.18 1.68 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the Santa Clara factory at (408) 986-8031 for the latest information. 2731GN-220V 220 Watts - 50 Volts, 200 s, 10% S-Band Radar 2700 - 3100 MHz Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable antitamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,600 employees globally. Learn more at www.microsemi.com. (c)2016 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Revision History Revision Level / Date Para. Affected Description 0.1 / June 2013 - Initial Preliminary Release 1 / 9 Feb 2016 - Formatted, updated export classification For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the Santa Clara factory at (408) 986-8031 for the latest information.