Datasheet
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RCJ510N25
Nch 250V 51A Power MOSFET
Outline
V
DSS
250V
LPT(S)
(SC-83)
R
DS(on)
(Max.) 65m
I
D
51A
P
D
304W
Features Inner circuit
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be sim ple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS com p liant
6) 100% Avalanche tested Packaging specifi cations
Type
Packaging Taping
Application Reel size (mm) 330
Switching Power Supply Tape width (mm) 24
Automotive Motor Drive Basic ordering unit ( pcs) 1,000
Drain - Source voltage V
DSS
250 V
Automot ive Solenoid Drive Taping code TL
Marking RCJ510N25
Absolute maximum rati ngs (T
a
= 25°C)
Parameter Symbol Value Unit
Pulsed drain current I
D,pulse *2
160 A
T
c
= 25°C
T
c
= 100°C
Continuous drain curr ent I
D *1
A
51
I
D *1
27.7 A
P
D
1.56 W
Gate - Source voltage V
GSS
30 V
P
D
304 W
Power dissipation T
c
= 25°C
T
a
= 25°C
*4
Avalanche energy, single pulse E
AS
*3
197.9
Junction temperat ur e T
j
150 °C
Range of storage t em per ature T
stg
55 to 150 °C
mJ
Avalanche current I
AR
*3
25.5 A
(2)
(1)
(3)
1 BODY DIODE
(1) Gate
(2) Drain
(3) Source
1
(1) (2) (3)
1/12 2016.02 - Rev.B
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Data Sheet
RCJ510N25
V
m
VGS = 10V, ID = 25.5A
Tj = 125°C
nA
VDS = 10V, ID = 1mA 3.0 - 5.0Gate threshold voltage VGS (th)
155
RDS(on) *5
Zero gate voltage drain current IDSS VDS = 250V, VGS = 0V
Tj = 25°C
100
--10
VGS = 0V, ID = 1mA
Electrical characteristics (Ta = 25°C)
Parameter
Drain - Source breakdown voltage V(BR)DSS
Values
V250 - -
Unit
Min. Typ. Max.
Thermal resistance
Parameter Symbol
Symbol Conditions
Values Unit
Min. Typ. Max.
A
Gate - Source leakage current IGSS VGS = 30V, VDS = 0V --
S
Static drain - source
on - state resistance
VGS = 10V, ID = 25.5A -4865
- 110
Forward transfer admittance VDS = 10V, ID = 25.5A 10 20 -
gfs
°C/W
Thermal resistance, junction - ambient *4 RthJA - - 80 °C/W
Thermal resistance, junction - case RthJC - - 0.41
°CSoldering temperature, wavesoldering for 10s Tsold - - 265
2/12 2016.02 - Rev.B
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Data Sheet
RCJ510N25
*1 Limited only by maximum temperat ur e allowed.
*2 Pw 10s, Duty cycle 1%
*3 L 500H, V
DD
= 50V, Rg = 25, starting T
j
= 25°C
*4 Mounted a epoxy PCB FR4 (25×27×0. 8mm)
*5 Pulsed
-
Continuous source curr ent
120 -
I
S
= 25.5A
di/dt = 100A/s
Reverse recovery charge Q
rr *5
- 1100 -
Body diode electrical characterist i cs (Source-Drain)(T
a
= 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Gate plat eau voltage V
(plateau)
V
DD
125V, I
D
= 51A -6.5
nC
160 A
Forward voltage V
SD *5
V
GS
= 0V, I
S
= 51A --1.5V
175 - ns
T
c
= 25°C
Reverse recovery time t
rr *5
I
S
*1
--51A
Pulsed source current I
SM
*2
-
Electrical charact eri st i cs (T
a
= 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
pFOutput capacit ance C
oss
V
DS
= 25V - 350 -
Reverse transfer capacitance C
rss
f = 1MHz
Input capacitance C
iss
V
GS
= 0V - 7000 -
- 200 -
Turn - on delay time t
d(on) *5
V
DD
125V, V
GS
= 10V -65-
ns
Rise time t
r *5
I
D
= 25.5A - 300 -
Turn - off delay tim e t
d(off) *5
R
L
= 4.7- 170 -
Fall time t
f *5
R
G
= 10- 210 -
Gate Charge characterist ics (T
a
= 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
-
-V
I
D
= 51A
V
GS
= 10V
-40-
Gate - Drain charge Q
gd *5
-40-
nCGate - Sour ce char ge Q
gs *5
Total gate charge Q
g *5
V
DD
125V -
3/12 2016.02 - Rev.B
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Data Sheet
RCJ510N25
Electrical charact eri st i c curves
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
0.01
0.1
1
10
0.0001 0.01 1 100
Ta=25ºC
Single Pulse
Rth(j-c)(t) = r(t)×Rth(ch-c)
Rth(j-c) = 80º C /W
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
Ta=25ºC
Single Pulse
PW = 100s
PW = 1ms
PW = 10ms
Operation in this
area is limited
by RDS(on)
Fig.1 Power Dissipation Derating Curve
Power Dissipation : PD/PDmax. [%]
Junction Temperature : Tj[°C]
Fig.2 Maximum Safe Operating Area
Drain Current : ID[A]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Norm alized T r ans ient T her mal Resistance : r(t)
Pulse Width : PW [s]
Drain - Source Voltage : VDS [V]
4/12 2016.02 - Rev.B
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Data Sheet
RCJ510N25
Electrical charact eri st i c curves
0
5
10
15
20
25
0 0.2 0.4 0.6 0.8 1
Ta=25ºC
Pulsed
VGS=6.0V
VGS=10.0V
VGS=7.0V
VGS=8.0V
0
10
20
30
40
50
0246810
Ta=25ºC
Pulsed
VGS=6.0V
VGS=10.0V
VGS=7.0V
VGS=8.0V
1
10
100
1000
0.01 0.1 1 10 100
VDD=50V,RG=25
VGF=10V,VGR=0V
Starting Tch=25ºC
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
Fig.6 Typical Output Characteristics(I)
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
Fig.7 Typical Output Characteristics(II)
Drain Current : ID[A]
Drain - Source Voltage : VDS [V]
Fig.4 Avalanche Current vs Inductive Load
Avalanche Cur rent : IAS [A]
Coil Inductanc e : L [m H]
Fig.5 Avalanche Energy Derating Curve
vs Junction Temperature
Avalanche Energy : EAS / EAS max . [%]
Junction Temperature : Tj[°C]
5/12 2016.02 - Rev.B
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Data Sheet
RCJ510N25
Electrical charact eri st i c curves
220
240
260
280
300
320
340
-50 0 50 100 150
VGS = 0V
ID = 1mA
0.001
0.01
0.1
1
10
100
012345678910
VDS= 10V
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-50-250 255075100125150
VDS = 10V
ID = 1mA
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS= 10V
Ta= 25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Gate Thr es hold Voltage : VGS(th) [V]
Junction Temperature : Tj[°C]
Fig.11 Transconductance vs. Drain Current
Trans c onductanc e : gfs [S]
Drain Current : ID[A]
Fig.8 Breakdown Voltage
vs. Junction Temperature
Junction Temperature : Tj[°C]
Fig.9 Typical Transfer Characteristics
Gate - Source Voltage : VGS [V]
Drain Current : ID[A]
Norm ar ize Drain - Source Br eakdown Voltage
: V(BR)DSS [V]
6/12 2016.02 - Rev.B
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Data Sheet
RCJ510N25
Electrical charact eri st i c curves
0
50
100
150
200
0 5 10 15
Ta=25ºC
ID = 25.5A
ID = 51A
10
100
1000
0.01 0.1 1 10 100
Ta=25ºC
VGS = 10V
0
50
100
150
-50 0 50 100 150
VGS = 10V
ID= 25.5A
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Dr ain - Source O n-State Res istanc e
: RDS(on) [m]
Junction Temperature : Tj[ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Dr ain - Source O n-State Res istanc e
: RDS(on) [m]
Drain Current : ID[A]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Dr ain - Source O n-State Res istanc e
: RDS(on) [m]
Gate - Source Voltage : VGS [V]
7/12 2016.02 - Rev.B
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© 2015 ROHM Co., Ltd. All rights reserved.
Data Sheet
RCJ510N25
Electrical charact eri st i c curves
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
10
100
1000
0.01 0.1 1 10 100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
VGS= 10V
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(I)
S
tat
i
c
D
ra
i
n -
S
ource
O
n-
S
tate
R
es
i
stance
: RDS(on) [m]
Drain Current : ID[A]
Fig.16 Drain Current Derating Curve
Drain Current Dis sipation
: ID/ID max. (%)
Junction Temperature : Tj[ºC]
8/12 2016.02 - Rev.B
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Data Sheet
RCJ510N25
Electrical charact eri st i c curves
10
100
1000
10000
100000
0.01 0.1 1 10 100 1000
Coss
Crss
Ciss
Ta= 25ºC
f = 1MHz
VGS = 0V 10
100
1000
10000
0.01 0.1 1 10 100
tr
tf
td(on)
td(off)
Ta=25ºC
VDD= 125V
VGS= 10V
RG=10
0
2
4
6
8
10
12
14
16
18
20
0 50 100 150 200 250
Ta=25ºC
VDD= 125V
ID= 51A
RG=10
Fig.17 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.19 Dynamic Input Characteristics
Gate - Source Voltage : VGS [V]
Total Gate Charge : Qg[nC]
Fig.18 Switching Characteristics
Switching Tim e : t [ns]
Drain Current : ID[A]
9/12 2016.02 - Rev.B
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Data Sheet
RCJ510N25
Electrical charact eri st i c curves
10
100
1000
0.1 1 10 100
Ta=25ºC
di / dt = 100A / s
VGS = 0V
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
VGS=0V
Fig21 Reverse Recovery Time
vs.Source Current
Reverse Recovery Tim e : trr [ns]
Source Curr ent : IS[A]
Fig.20 Source Current
vs. Source - Drain Voltage
Source Curr ent : IS[A]
Source-D rain Voltage : VSD [V]
10/12 2016.02 - Rev.B
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Data Sheet
RCJ510N25
Measurement circuit s
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
V
GS
I
G(Const.)
V
DS
D.U.T.
I
D
R
L
V
DD
90%
90% 90%
10% 10%
50%
10%
50%
VGS
Pulse width
VDS
ton toff
tr
td(on) tf
td(off)
VGS
RG
VDS
D.U.T.
ID
RL
VDD
VG
VGS
Charge
Q
g
Q
gs
Q
gd
V
GS
R
G
V
DS
D.U.T.
I
AS
L
V
DD
IAS
VDD
V(BR)DSS
I
AS
2
L
EAS =V(BR)DSS
-
VDD
V(BR)DSS
1
2
11/12 2016.02 - Rev.B
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Data Sheet
RCJ510N25
Dimensions (Unit : mm)
Dimension in mm / inches
LPTS
L3
b2
b3
eb
L2E
c1
A2
L1
c
H
A3
Lp
L
L4
l3
l2 l1
b6
xBA
B
A1
eb5
DA
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
MIN MAX MIN MAX
A1
0.00 0.30 0.000 0.012
A2
4.30 4.70 0.169 0.185
A3
b
0.68 0.98 0.027 0.039
b2
b3
1.14 1.44 0.045 0.057
c
0.30 0.60 0.012 0.024
c
1
1.10 1.50 0.043 0.059
D
9.80 10.40 0.386 0.409
E
8.80 9.20 0.346 0.362
e
H
E
12.80 13.40 0.504 0.528
L
2.70 3.30 0.106 0.130
L1
0.90 1.50 0.035 0.059
L2
L3
L4
L
p
0.90 1.50 0.035 0.059
x
- 0.25 - 0.010
MIN MAX MIN MAX
b5
- 1.23 - 0.049
b6
- 10.40 - 0.409
l1
- 2.10 - 0.083
l2
- 7.55 - 0.297
l3
- 13.40 - 0.528
7.25 0.285
1.00 0.039
DIM MILIMETERS INCHES
8.90 0.350
2.54 0.100
1.10 0.043
DIM MILIMETERS INCHES
0.25 0.010
12/12 2016.02 - Rev.B