8783L–DFLASH–7/2017
Features
Single 1.65V - 3.6V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI modes 0 and 3
Supports RapidS™ operation
Continuous read capability through entire array
Up to 85MHz
Low-power read option up to 15 MHz
Clock-to-output time (tV) of 6ns maximum
User configurable page size
256 bytes per page
264 bytes per page (default)
Page size can be factory pre-configured for 256 bytes
Two fully independent SRAM data buffers (256/264 bytes)
Allows receiving data while reprogramming the main memory array
Flexible programming options
Byte/Page Program (1 to 256/264 bytes) directly into main memory
Buffer Write
Buffer to Main Memory Page Program
Flexible erase options
Page Erase (256/264 bytes)
Block Erase (2KB)
Sector Erase (64KB)
Chip Erase (4-Mbits)
Program and Erase Suspend/Resume
Advanced hardware and software data protection features
Individual sector protection
Individual sector lockdown to make any sector permanently read-only
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Hardware and software controlled reset options
JEDEC Standard Manufacturer and Device ID Read
Low-power dissipation
400nA Ultra-Deep Power-Down current (typical)
3µA Deep Power-Down current (typical)
25µA Standby current (typical)
7mA Active Read current (typical @ 15 MHz))
Endurance: 100,000 program/erase cycles per page minimum
Data retention: 20 years
Complies with full industrial temperature range
Green (Pb/Halide-free/RoHS compliant) packaging options
8-lead SOIC (0.150" wide and 0.208" wide)
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
8-ball Wafer Level Chip Scale Package
Die in Wafer Form(1)
AT45DB041E
4-Mbit DataFlash (with Extra 128-Kbits), 1.65V Minimum
SPI Serial Flash Memory
Note: 1. Contact factory for availability.
2
AT45DB041E
8783L–DFLASH–7/2017
Description
The AT45DB041E is a 1.65V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety
of digital voice, image, program code, and data storage applications. The AT45DB041E also supports the RapidS serial
interface for applications requiring very high speed operation. Its 4,194,304 bits of memory are organized as 2,048 pages
of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB041E also contains two SRAM buffers of
256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed.
Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. In
addition, the SRAM buffers can be used as additional system scratch pad memory, and E2PROM emulation (bit or byte
alterability) can be easily handled with a self-contained three step read-modify-write operation.
Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the
DataFlash® uses a serial interface to sequentially access its data. The simple sequential access dramatically reduces
active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, and
reduces package size. The device is optimized for use in many commercial and industrial applications where
high-density, low-pin count, low-voltage, and low-power are essential.
To allow for simple in-system re-programmability, the AT45DB041E does not require high input voltages for
programming. The device operates from a single 1.65V to 3.6V power supply for the erase and program and read
operations. The AT45DB041E is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting
of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).
All programming and erase cycles are self-timed.
1. Pin Configurations and Pinouts
Figure 1-1. Pinouts
Note: 1. The metal pad on the bottom of the UDFN package is not internally connected to a voltage potential.
This pad can be a “no connect” or connected to GND.
2. Contact info@adestotech.com for manufacturing flow and availability.
1
2
3
4
8
7
6
5
SI
SCK
RESET
CS
SO
GND
V
CC
WP
8-lead SOIC
Top View
SI
SCK
RESET
CS
SO
GND
V
CC
WP
8
7
6
5
1
2
3
4
8-pad UDFN
Top View
(through package)
(1)
V
CC
GND
SO
CS
SCK
SI
WP
RESET
8-Ball WLCSP
Bottom View
Pin 1
(2)
3
AT45DB041E
8783L–DFLASH–7/2017
Table 1-1. Pin Configurations
Symbol Name and Function
Asserted
State Type
CS
Chip Select: Asserting the CS pin selects the device. When the CS pin is deasserted, the
device will be deselected and normally be placed in the standby mode (not Deep Power-Down
mode) and the output pin (SO) will be in a high-impedance state. When the device is
deselected, data will not be accepted on the input pin (SI).
A high-to-low transition on the CS pin is required to start an operation and a low-to-high
transition is required to end an operation. When ending an internally self-timed operation such
as a program or erase cycle, the device will not enter the standby mode until the completion of
the operation.
Low Input
SCK
Serial Clock: This pin is used to provide a clock to the device and is used to control the flow of
data to and from the device. Command, address, and input data present on the SI pin is
always latched on the rising edge of SCK, while output data on the SO pin is always clocked
out on the falling edge of SCK.
—Input
SI
Serial Input: The SI pin is used to shift data into the device. The SI pin is used for all data input
including command and address sequences. Data on the SI pin is always latched on the rising
edge of SCK. Data present on the SI pin will be ignored whenever the device is deselected (CS
is deasserted).
—Input
SO
Serial Output: The SO pin is used to shift data out from the device. Data on the SO pin is
always clocked out on the falling edge of SCK. The SO pin will be in a high-impedance state
whenever the device is deselected (CS is deasserted).
—Output
WP
Write Protect: When the WP pin is asserted, all sectors specified for protection by the Sector
Protection Register will be protected against program and erase operations regardless of
whether the Enable Sector Protection command has been issued or not. The WP pin functions
independently of the software controlled protection method. After the WP pin goes low, the
contents of the Sector Protection Register cannot be modified.
If a program or erase command is issued to the device while the WP pin is asserted, the device
will simply ignore the command and perform no operation. The device will return to the idle
state once the CS pin has been deasserted. The Enable Sector Protection command and the
Sector Lockdown command, however, will be recognized by the device when the WP pin is
asserted.
The WP pin is internally pulled-high and may be left floating if hardware controlled protection
will not be used. However, it is recommended that the WP pin also be externally connected to
VCC whenever possible.
Low Input
RESET
Reset: A low state on the reset pin (RESET) will terminate the operation in progress and reset
the internal state machine to an idle state. The device will remain in the reset condition as long
as a low level is present on the RESET pin. Normal operation can resume once the RESET pin
is brought back to a high level.
The device incorporates an internal power-on reset circuit, so there are no restrictions on the
RESET pin during power-on sequences. If this pin and feature is not utilized, then it is
recommended that the RESET pin be driven high externally.
Low Input
VCC
Device Power Supply: The VCC pin is used to supply the source voltage to the device.
Operations at invalid VCC voltages may produce spurious results and should not be attempted. —Power
GND Ground: The ground reference for the power supply. GND should be connected to the system
ground. —Ground
4
AT45DB041E
8783L–DFLASH–7/2017
2. Block Diagram
Figure 2-1. Block Diagram
Flash Memory Array
I/O Interface
SCK
CS
RESET
VCC
GND
WP
SOSI
Page (256/264 bytes)
Buffer 1 (256/264 bytes) Buffer 2 (256/264 bytes)
5
AT45DB041E
8783L–DFLASH–7/2017
3. Memory Array
To provide optimal flexibility, the AT45DB041E memory array is divided into three levels of granularity comprising of
sectors, blocks, and pages. Figure 3-1, Memory Architecture Diagram illustrates the breakdown of each level and details
the number of pages per sector and block. Program operations to the DataFlash can be done at the full page level or at
the byte level (a variable number of bytes). The erase operations can be performed at the chip, sector, block, or page
level.
Figure 3-1. Memory Architecture Diagram
Sector 0a = 8 pages
2,048/2,112 bytes
Sector 0b = 248 pages
63,488/65,472 bytes
Block = 2,048/2,112 bytes
8 Pages
Sector 0a
Sector 0b
Page = 256/264 bytes
Page 0
Page 1
Page 6
Page 7
Page 8
Page 9
Page 2,046
Page 2,047
Block 0
Page 14
Page 15
Page 16
Page 17
Page 18
Block 1
Sector Architecture Block Architecture Page Architecture
Block 0
Block 1
Block 30
Block 31
Block 32
Block 33
Block 254
Block 255
Block 62
Block 63
Block 64
Block 65
Sector 1Sector 2
Sector 7 = 256 pages
65,536/67,584 bytes
Block 2
Sector 1 = 256 pages
65,536/67,584 bytes
Sector 6 = 256 pages
65,536/67,584 bytes
Sector 2 = 256 pages
65,536/67,584 bytes
6
AT45DB041E
8783L–DFLASH–7/2017
4. Device Operation
The device operation is controlled by instructions from the host processor. The list of instructions and their associated
opcodes are contained in Table 15-1 on page 40 through Table 15-4 on page 41. A valid instruction starts with the falling
edge of CS followed by the appropriate 8-bit opcode and the desired buffer or main memory address location. While the
CS pin is low, toggling the SCK pin controls the loading of the opcode and the desired buffer or main memory address
location through the SI (Serial Input) pin. All instructions, addresses, and data are transferred with the Most Significant
Bit (MSB) first.
Three address bytes are used to address memory locations in either the main memory array or in one of the SRAM
buffers. The three address bytes will be comprised of a number of dummy bits and a number of actual device address
bits, with the number of dummy bits varying depending on the operation being performed and the selected device page
size. Buffer addressing for the standard DataFlash page size (264 bytes) is referenced in the datasheet using the
terminology BFA8 - BFA0 to denote the 9 address bits required to designate a byte address within a buffer. The main
memory addressing is referenced using the terminology PA10 - PA0 and BA8 - BA0, where PA10 - PA0 denotes the
11 address bits required to designate a page address, and BA8 - BA0 denotes the 9 address bits required to designate a
byte address within the page. Therefore, when using the standard DataFlash page size, a total of 20 address bits are
used.
For the “power of 2” binary page size (256 bytes), the buffer addressing is referenced in the datasheet using the
conventional terminology BFA7 - BFA0 to denote the eight address bits required to designate a byte address within a
buffer. Main memory addressing is referenced using the terminology A18 - A0, where A18 - A8 denotes the 11 address
bits required to designate a page address, and A7 - A0 denotes the eight address bits required to designate a byte
address within a page. Therefore, when using the binary page size, a total of 19 address bits are used.
7
AT45DB041E
8783L–DFLASH–7/2017
5. Read Commands
By specifying the appropriate opcode, data can be read from the main memory or from either one of the two SRAM data
buffers. The DataFlash supports RapidS protocols for Mode 0 and Mode 3. Please see Section 25., Detailed Bit-level
Read Waveforms: RapidS Mode 0/Mode 3 diagrams in this datasheet for details on the clock cycle sequences for each
mode.
5.1 Continuous Array Read (Legacy Command: E8h Opcode)
By supplying an initial starting address for the main memory array, the Continuous Array Read command can be utilized to
sequentially read a continuous stream of data from the device by simply providing a clock signal; no additional addressing
information or control signals need to be provided. The DataFlash incorporates an internal address counter that will
automatically increment on every clock cycle, allowing one continuous read from memory to be performed without the
need for additional address sequences. To perform a Continuous Array Read using the standard DataFlash page size
(264 bytes), an opcode of E8h must be clocked into the device followed by three address bytes (which comprise the 24-bit
page and byte address sequence) and four dummy bytes. The first 11 bits (PA10 - PA0) of the 20-bit address sequence
specify which page of the main memory array to read and the last nine (BA8 - BA0) of the 20-bit address sequence specify
the starting byte address within the page. To perform a Continuous Array Read using the binary page size
(256 bytes), an opcode of E8h must be clocked into the device followed by three address bytes and four dummy bytes.
The first 11 bits (A18 - A8) of the 19-bit address sequence specify which page of the main memory array to read and the
last eight bits (A7 - A0) of the 19-bit address sequence specify the starting byte address within the page. The dummy
bytes that follow the address bytes are needed to initialize the read operation. Following the dummy bytes, additional clock
pulses on the SCK pin will result in data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, the dummy bytes, and the reading of
data. When the end of a page in the main memory is reached during a Continuous Array Read, the device will continue
reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossover from
the end of one page to the beginning of the next page). When the last bit in the main memory array has been read, the
device will continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no
delays will be incurred when wrapping around from the end of the array to the beginning of the array.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum
SCK frequency allowable for the Continuous Array Read is defined by the fCAR1 specification. The Continuous Array Read
bypasses the data buffers and leaves the contents of the buffers unchanged.
Warning: This command is not recommended for new designs.
5.2 Continuous Array Read (High Frequency Mode: 1Bh Opcode)
This command can be used to read the main memory array sequentially at the highest possible operating clock
frequency up to the maximum specified by fCAR4. To perform a Continuous Array Read using the standard DataFlash
page size (264 bytes), the CS pin must first be asserted, and then an opcode of 1Bh must be clocked into the device
followed by three address bytes and two dummy bytes. The first 11 bits (PA10 - PA0) of the 20-bit address sequence
specify which page of the main memory array to read and the last 9 bits (BA8 - BA0) of the 20-bit address sequence
specify the starting byte address within the page. To perform a Continuous Array Read using the binary page size (256
bytes), the opcode 1Bh must be clocked into the device followed by three address bytes (A18 - A0) and two dummy
bytes. Following the dummy bytes, additional clock pulses on the SCK pin will result in data being output on the SO
(Serial Output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, the dummy bytes, and the reading of
data. When the end of a page in the main memory is reached during a Continuous Array Read, the device will continue
reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossover
from the end of one page to the beginning of the next page). When the last bit in the main memory array has been read,
the device will continue reading back at the beginning of the first page of memory. As with crossing over page
boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array.
8
AT45DB041E
8783L–DFLASH–7/2017
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum
SCK frequency allowable for the Continuous Array Read is defined by the fCAR1 specification. The Continuous Array
Read bypasses both data buffers and leaves the contents of the buffers unchanged.
5.3 Continuous Array Read (High Frequency Mode: 0Bh Opcode)
This command can be used to read the main memory array sequentially at higher clock frequencies up to the maximum
specified by fCAR1. To perform a Continuous Array Read using the standard DataFlash page size (264 bytes), the CS pin
must first be asserted, and then an opcode of 0Bh must be clocked into the device followed by three address bytes and
one dummy byte. The first 11 bits (PA10 - PA0) of the 20-bit address sequence specify which page of the main memory
array to read and the last 9 bits (BA8 - BA0) of the 20-bit address sequence specify the starting byte address within the
page. To perform a Continuous Array Read using the binary page size (256 bytes), the opcode 0Bh must be clocked into
the device followed by three address bytes (A18 - A0) and one dummy byte. Following the dummy byte, additional clock
pulses on the SCK pin will result in data being output on the SO pin.
The CS pin must remain low during the loading of the opcode, the address bytes, the dummy byte, and the reading of
data. When the end of a page in the main memory is reached during a Continuous Array Read, the device will continue
reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossover
from the end of one page to the beginning of the next page). When the last bit in the main memory array has been read,
the device will continue reading back at the beginning of the first page of memory. As with crossing over page
boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum
SCK frequency allowable for the Continuous Array Read is defined by the fCAR1 specification. The Continuous Array
Read bypasses both data buffers and leaves the contents of the buffers unchanged.
5.4 Continuous Array Read (Low Frequency Mode: 03h Opcode)
This command can be used to read the main memory array sequentially at lower clock frequencies up to maximum
specified by fCAR2. Unlike the previously described read commands, this Continuous Array Read command for the lower
clock frequencies does not require the clocking in of dummy bytes after the address byte sequence. To perform a
Continuous Array Read using the standard DataFlash page size (264 bytes), the CS pin must first be asserted, and then
an opcode of 03h must be clocked into the device followed by three address bytes. The first 11 bits (PA10 - PA0) of the
20-bit address sequence specify which page of the main memory array to read and the last 9 bits (BA8 - BA0) of the
address sequence specify the starting byte address within the page. To perform a Continuous Array Read using the
binary page size (256 bytes), the opcode 03h must be clocked into the device followed by three address bytes (A18 -
A0). Following the address bytes, additional clock pulses on the SCK pin will result in data being output on the SO pin.
The CS pin must remain low during the loading of the opcode, the address bytes, and the reading of data. When the end
of a page in the main memory is reached during a Continuous Array Read, the device will continue reading at the
beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the end of
one page to the beginning of the next page). When the last bit in the main memory array has been read, the device will
continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will
be incurred when wrapping around from the end of the array to the beginning of the array.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum
SCK frequency allowable for the Continuous Array Read is defined by the fCAR2 specification. The Continuous Array
Read bypasses both data buffers and leaves the contents of the buffers unchanged.
5.5 Continuous Array Read (Low Power Mode: 01h Opcode)
This command is ideal for applications that want to minimize power consumption and do not need to read the memory
array at high frequencies. Like the 03h opcode, this Continuous Array Read command allows reading the main memory
array sequentially without the need for dummy bytes to be clocked in after the address byte sequence. The memory can
be read at clock frequencies up to maximum specified by fCAR3. To perform a Continuous Array Read using the standard
DataFlash page size (264 bytes), the CS pin must first be asserted, and then an opcode of 01h must be clocked into the
device followed by three address bytes. The first 11 bits (PA10 - PA0) of the 20-bit address sequence specify which page
9
AT45DB041E
8783L–DFLASH–7/2017
of the main memory array to read and the last 9 bits (BA8 - BA0) of the 20-bit address sequence specify the starting byte
address within the page. To perform a Continuous Array Read using the binary page size (256 bytes), the opcode 01h
must be clocked into the device followed by three address bytes (A18 - A0). Following the address bytes, additional clock
pulses on the SCK pin will result in data being output on the SO pin.
The CS pin must remain low during the loading of the opcode, the address bytes, and the reading of data. When the end
of a page in the main memory is reached during a Continuous Array Read, the device will continue reading at the
beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the end of
one page to the beginning of the next page). When the last bit in the main memory array has been read, the device will
continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will
be incurred when wrapping around from the end of the array to the beginning of the array.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum
SCK frequency allowable for the Continuous Array Read is defined by the fCAR3 specification. The Continuous Array
Read bypasses both data buffers and leaves the contents of the buffers unchanged.
5.6 Main Memory Page Read
A Main Memory Page Read allows the reading of data directly from a single page in the main memory, bypassing both of
the data buffers and leaving the contents of the buffers unchanged. To start a page read using the standard DataFlash
page size (264 bytes), an opcode of D2h must be clocked into the device followed by three address bytes (which
comprise the 24-bit page and byte address sequence) and four dummy bytes. The first 11 bits (PA10 - PA0) of the 20-bit
address sequence specify the page in main memory to be read and the last nine bits (BA8 - BA0) of the 20-bit address
sequence specify the starting byte address within that page. To start a page read using the binary page size (256 bytes),
the opcode D2h must be clocked into the device followed by three address bytes and four dummy bytes. The first 11 bits
(A18 - A8) of the 19-bit address sequence specify which page of the main memory array to read, and the last eight bits
(A7 - A0) of the 19-bit address sequence specify the starting byte address within that page. The dummy bytes that follow
the address bytes are sent to initialize the read operation. Following the dummy bytes, the additional pulses on SCK
result in data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, the dummy bytes, and the reading of
data. Unlike the Continuous Array Read command, when the end of a page in main memory is reached, the device will
continue reading back at the beginning of the same page rather than the beginning of the next page.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum
SCK frequency allowable for the Main Memory Page Read is defined by the fSCK specification. The Main Memory Page
Read bypasses both data buffers and leaves the contents of the buffers unchanged.
5.7 Buffer Read
The SRAM data buffers can be accessed independently from the main memory array, and utilizing the Buffer Read
command allows data to be sequentially read directly from either one of the buffers. Four opcodes, D4h or D1h for
Buffer 1 and D6h or D3h for Buffer 2, can be used for the Buffer Read command. The use of each opcode depends on
the maximum SCK frequency that will be used to read data from the buffers. The D4h and D6h opcode can be used at
any SCK frequency up to the maximum specified by fCAR1 while the D1h and D3h opcode can be used for lower
frequency read operations up to the maximum specified by fCAR2.
To perform a Buffer Read using the standard DataFlash buffer size (264 bytes), the opcode must be clocked into the
device followed by three address bytes comprised of 15 dummy bits and 9 buffer address bits (BFA8 - BFA0). To perform
a Buffer Read using the binary buffer size (256 bytes), the opcode must be clocked into the device followed by three
address bytes comprised of 16 dummy bits and eight buffer address bits (BFA7 - BFA0). Following the address bytes,
one dummy byte must be clocked into the device to initialize the read operation if using opcodes D4h or D6h. The CS pin
must remain low during the loading of the opcode, the address bytes, the dummy byte (if using opcodes D4h or D6h),
and the reading of data. When the end of a buffer is reached, the device will continue reading back at the beginning of
the buffer. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO).
10
AT45DB041E
8783L–DFLASH–7/2017
6. Program and Erase Commands
6.1 Buffer Write
Utilizing the Buffer Write command allows data clocked in from the SI pin to be written directly into either one of the
SRAM data buffers.
To load data into a buffer using the standard DataFlash buffer size (264 bytes), an opcode of 84h for Buffer 1 or 87h for
Buffer 2 must be clocked into the device followed by three address bytes comprised of 15 dummy bits and nine buffer
address bits (BFA8 - BFA0). The nine buffer address bits specify the first byte in the buffer to be written.
To load data into a buffer using the binary buffer size (256 bytes), an opcode of 84h for Buffer 1 or 87h for Buffer 2, must
be clocked into the device followed by 16 dummy bits and eight buffer address bits (BFA7 - BFA0). The eight buffer
address bits specify the first byte in the buffer to be written.
After the last address byte has been clocked into the device, data can then be clocked in on subsequent clock cycles. If
the end of the data buffer is reached, the device will wrap around back to the beginning of the buffer. Data will continue to
be loaded into the buffer until a low-to-high transition is detected on the CS pin.
6.2 Buffer to Main Memory Page Program with Built-In Erase
The Buffer to Main Memory Page Program with Built-In Erase command allows data that is stored in one of the SRAM
buffers to be written into an erased or programmed page in the main memory array. It is not necessary to pre-erase the
page in main memory to be written because this command will automatically erase the selected page prior to the
program cycle.
To perform a Buffer to Main Memory Page Program with Built-In Erase using the standard DataFlash page size
(264 bytes), an opcode of 83h for Buffer 1 or 86h for Buffer 2 must be clocked into the device followed by three address
bytes comprised of four dummy bits, 11 page address bits (PA10 - PA0) that specify the page in the main memory to be
written, and nine dummy bits.
To perform a Buffer to Main Memory Page Program with Built-In Erase using the binary page size (256 bytes), an opcode
of 83h for Buffer 1 or 86h for Buffer 2 must be clocked into the device followed by three address bytes comprised of five
dummy bits, 11 page address bits (A18 - A8) that specify the page in the main memory to be written, and eight dummy
bits.
When a low-to-high transition occurs on the CS pin, the device will first erase the selected page in main memory (the
erased state is a Logic 1) and then program the data stored in the appropriate buffer into that same page in main
memory. Both the erasing and the programming of the page are internally self-timed and should take place in a
maximum time of tEP. During this time, the RDY/BUSY bit in the Status Register will indicate that the device is busy.
The device also incorporates an intelligent erase and program algorithm that can detect when a byte location fails to
erase or program properly. If an erase or programming error arises, it will be indicated by the EPE bit in the Status
Register.
6.3 Buffer to Main Memory Page Program without Built-In Erase
The Buffer to Main Memory Page Program without Built-In Erase command allows data that is stored in one of the SRAM
buffers to be written into a pre-erased page in the main memory array. It is necessary that the page in main memory to be
written be previously erased in order to avoid programming errors.
To perform a Buffer to Main Memory Page Program without Built-In Erase using the standard DataFlash page size
(264 bytes), an opcode of 88h for Buffer 1 or 89h for Buffer 2 must be clocked into the device followed by three address
bytes comprised of four dummy bits, 11 page address bits (PA10 - PA0) that specify the page in the main memory to be
written, and nine dummy bits.
To perform a Buffer to Main Memory Page Program using the binary page size (256 bytes), an opcode of 88h for Buffer
1 or 89h for Buffer 2 must be clocked into the device followed by three address bytes comprised of three dummy bits,
11 page address bits (A18 - A8) that specify the page in the main memory to be written, and eight dummy bits.
11
AT45DB041E
8783L–DFLASH–7/2017
When a low-to-high transition occurs on the CS pin, the device will program the data stored in the appropriate buffer into
the specified page in the main memory. The page in main memory that is being programmed must have been previously
erased using one of the erase commands (Page Erase, Block Erase, Sector Erase, or Chip Erase). The programming of
the page is internally self-timed and should take place in a maximum time of tP. During this time, the RDY/BUSY bit in the
Status Register will indicate that the device is busy.
The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program
properly. If a programming error arises, it will be indicated by the EPE bit in the Status Register.
6.4 Main Memory Page Program through Buffer with Built-In Erase
The Main Memory Page Program through Buffer with Built-In Erase command combines the Buffer Write and Buffer to
Main Memory Page Program with Built-In Erase operations into a single operation to help simplify application firmware
development. With the Main Memory Page Program through Buffer with Built-In Erase command, data is first clocked
into either Buffer 1 or Buffer 2, the addressed page in memory is then automatically erased, and then the contents of the
appropriate buffer are programmed into the just-erased main memory page.
To perform a Main Memory Page Program through Buffer using the standard DataFlash page size (264 bytes), an
opcode of 82h for Buffer 1 or 85h for Buffer 2 must first be clocked into the device followed by three address bytes
comprised of four dummy bits, 11 page address bits (PA10 - PA0) that specify the page in the main memory to be written,
and nine buffer address bits (BFA8 - BFA0) that select the first byte in the buffer to be written.
To perform a Main Memory Page Program through Buffer using the binary page size (256 bytes), an opcode of 82h for
Buffer 1 or 85h for Buffer 2 must first be clocked into the device followed by three address bytes comprised of five dummy
bits, 11 page address bits (A18 - A8) that specify the page in the main memory to be written, and eight buffer address bits
(BFA7 - BFA0) that select the first byte in the buffer to be written.
After all address bytes have been clocked in, the device will take data from the input pin (SI) and store it in the specified
data buffer. If the end of the buffer is reached, the device will wrap around back to the beginning of the buffer. When
there is a low-to-high transition on the CS pin, the device will first erase the selected page in main memory (the erased
state is a Logic 1) and then program the data stored in the buffer into that main memory page. Both the erasing and the
programming of the page are internally self-timed and should take place in a maximum time of tEP. During this time, the
RDY/BUSY bit in the Status Register will indicate that the device is busy.
The device also incorporates an intelligent erase and programming algorithm that can detect when a byte location fails to
erase or program properly. If an erase or program error arises, it will be indicated by the EPE bit in the Status Register.
6.5 Main Memory Byte/Page Program through Buffer 1 without Built-In Erase
The Main Memory Byte/Page Program through Buffer 1 without Built-In Erase command combines both the Buffer Write
and Buffer to Main Memory Program without Built-In Erase operations to allow any number of bytes (1 to 256/264 bytes)
to be programmed directly into previously erased locations in the main memory array. With the Main Memory Byte/Page
Program through Buffer 1 without Built-In Erase command, data is first clocked into Buffer 1, and then only the bytes
clocked into the buffer are programmed into the pre-erased byte locations in main memory. Multiple bytes up to the page
size can be entered with one command sequence.
To perform a Main Memory Byte/Page Program through Buffer 1 using the standard DataFlash page size (264 bytes), an
opcode of 02h must first be clocked into the device followed by three address bytes comprised of four dummy bits,
11 page address bits (PA10 - PA0) that specify the page in the main memory to be written, and nine buffer address bits
(BFA8 - BFA0) that select the first byte in the buffer to be written. After all address bytes are clocked in, the device will
take data from the input pin (SI) and store it in Buffer 1. Any number of bytes (1 to 264) can be entered. If the end of the
buffer is reached, then the device will wrap around back to the beginning of the buffer.
To perform a Main Memory Byte/Page Program through Buffer 1 using the binary page size (256 bytes), an opcode of
02h for Buffer 1 using must first be clocked into the device followed by three address bytes comprised of three dummy
bits, 11 page address bits (A18 - A8) that specify the page in the main memory to be written, and eight buffer address bits
(BFA7 - BFA0) that selects the first byte in the buffer to be written. After all address bytes are clocked in, the device will
take data from the input pin (SI) and store it in Buffer 1. Any number of bytes (1 to 256) can be entered. If the end of the
12
AT45DB041E
8783L–DFLASH–7/2017
buffer is reached, then the device will wrap around back to the beginning of the buffer. When using the binary page size,
the page and buffer address bits correspond to a 19-bit logical address (A18-A0) in the main memory.
After all data bytes have been clocked into the device, a low-to-high transition on the CS pin will start the program
operation in which the device will program the data stored in Buffer 1 into the main memory array. Only the data bytes
that were clocked into the device will be programmed into the main memory.
Example: If only two data bytes were clocked into the device, then only two bytes will be programmed into main
memory and the remaining bytes in the memory page will remain in their previous state.
The CS pin must be deasserted on a byte boundary (multiples of eight bits); otherwise, the operation will be aborted and
no data will be programmed. The programming of the data bytes is internally self-timed and should take place in a
maximum time of tP (the program time will be a multiple of the tBP time depending on the number of bytes being
programmed). During this time, the RDY/BUSY bit in the Status Register will indicate that the device is busy.
The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program
properly. If a programming error arises, it will be indicated by the EPE bit in the Status Register.
6.6 Read-Modify-Write
A completely self-contained read-modify-write operation can be performed to reprogram any number of sequential bytes
in a page in the main memory array without affecting the rest of the bytes in the same page. This command allows the
device to easily emulate an EEPROM by providing a method to modify a single byte or more in the main memory in a
single operation, without the need for pre-erasing the memory or the need for any external RAM buffers. The
Read-Modify-Write command is essentially a combination of the Main Memory Page to Buffer Transfer, Buffer Write, and
Buffer to Main Memory Page Program with Built-in Erase commands.
To perform a Read-Modify-Write using the standard DataFlash page size (264 bytes), an opcode of 58h for Buffer 1 or
59h for Buffer 2 must be clocked into the device followed by three address bytes comprised of four dummy bits, 11 page
address bits (PA10 - PA0) that specify the page in the main memory to be written, and nine byte address bits (BA8 - BA0)
that designate the starting byte address within the page to reprogram.
To perform a Read-Modify-Write using the binary page size (256 bytes), an opcode of 58h for Buffer 1 or 59h for Buffer 2
must be clocked into the device followed by three address bytes comprised of five dummy bits, 11 page address bits
(A18 - A8) that specify the page in the main memory to be written, and eight byte address bits (A7 - A0) designate the
starting byte address within the page to reprogram.
After the address bytes have been clocked in, any number of sequential data bytes from one to 256/264 bytes can be
clocked into the device. If the end of the buffer is reached when clocking in the data, then the device will wrap around
back to the beginning of the buffer. After all data bytes have been clocked into the device, a low-to-high transition on the
CS pin will start the self-contained, internal read-modify-write operation. Only the data bytes that were clocked into the
device will be reprogrammed in the main memory.
Example: If only one data byte was clocked into the device, then only one byte in main memory will be reprogrammed
and the remaining bytes in the main memory page will remain in their previous state.
The CS pin must be deasserted on a byte boundary (multiples of eight bits); otherwise, the operation will be aborted and
no data will be programmed. The reprogramming of the data bytes is internally self-timed and should take place in a
maximum time of tP. During this time, the RDY/BUSY bit in the Status Register will indicate that the device is busy.
The device also incorporates an intelligent erase and programming algorithm that can detect when a byte location fails to
erase or program properly. If an erase or program error arises, it will be indicated by the EPE bit in the Status Register.
Note: The Read-Modify-Write command uses the same opcodes as the Auto Page Rewrite command. If no data
bytes are clocked into the device, then the device will perform an Auto Page Rewrite operation. See the
Auto Page Rewrite command description on page 27 for more details.
13
AT45DB041E
8783L–DFLASH–7/2017
6.7 Page Erase
The Page Erase command can be used to individually erase any page in the main memory array allowing the Buffer to
Main Memory Page Program without Built-In Erase command or the Main Memory Byte/Page Program through Buffer 1
command to be utilized at a later time.
To perform a Page Erase with the standard DataFlash page size (264 bytes), an opcode of 81h must be clocked into the
device followed by three address bytes comprised of four dummy bits, 11 page address bits (PA10 - PA0) that specify the
page in the main memory to be erased, and nine dummy bits.
To perform a Page Erase with the binary page size (256 bytes), an opcode of 81h must be clocked into the device
followed by three address bytes comprised of five dummy bits, 11 page address bits (A18 - A8) that specify the page in
the main memory to be erased, and eight dummy bits.
When a low-to-high transition occurs on the CS pin, the device will erase the selected page (the erased state is a
Logic 1). The erase operation is internally self-timed and should take place in a maximum time of tPE. During this time, the
RDY/BUSY bit in the Status Register will indicate that the device is busy.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If
an erase error arises, it will be indicated by the EPE bit in the Status Register.
6.8 Block Erase
The Block Erase command can be used to erase a block of eight pages at one time. This command is useful when
needing to pre-erase larger amounts of memory and is more efficient than issuing eight separate Page Erase
commands.
To perform a Block Erase with the standard DataFlash page size (264 bytes), an opcode of 50h must be clocked into the
device followed by three address bytes comprised of four dummy bits, eight page address bits (PA10 - PA3), and
12 dummy bits. The eight page address bits are used to specify which block of eight pages is to be erased.
To perform a Block Erase with the binary page size (256 bytes), an opcode of 50h must be clocked into the device
followed by three address bytes comprised of five dummy bits, eight page address bits (A18 - A11), and 11 dummy bits.
The eight page address bits are used to specify which block of eight pages is to be erased.
When a low-to-high transition occurs on the CS pin, the device will erase the selected block of eight pages. The erase
operation is internally self-timed and should take place in a maximum time of tBE. During this time, the RDY/BUSY bit in
the Status Register will indicate that the device is busy.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If
an erase error arises, it will be indicated by the EPE bit in the Status Register.
Table 6-1. Block Erase Addressing
PA10/
A18
PA9/
A17
PA8/
A16
PA7/
A15
PA6/
A14
PA5/
A13
PA4/
A12
PA3/
A11
PA2/
A10
PA1/
A9
PA0/
A8 Block
0 0 0 0 0 0 0 0 X X X 0
0 0 0 0 0 0 0 1 X X X 1
0 0 0 0 0 0 1 0 X X X 2
0 0 0 0 0 0 1 1 X X X 3
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1 1 1 1 1 1 0 0 X X X 252
1 1 1 1 1 1 0 1 X X X 253
1 1 1 1 1 1 1 0 X X X 254
1 1 1 1 1 1 1 1 X X X 255
14
AT45DB041E
8783L–DFLASH–7/2017
6.9 Sector Erase
The Sector Erase command can be used to individually erase any sector in the main memory.
The main memory array is comprised of nine sectors, and only one sector can be erased at a time. To perform an erase
of Sector 0a or Sector 0b with the standard DataFlash page size (264 bytes), an opcode of 7Ch must be clocked into the
device followed by three address bytes comprised of four dummy bits, eight page address bits (PA10 - PA3), and
12 dummy bits. To perform a Sector 1-7 erase, an opcode of 7Ch must be clocked into the device followed by three
address bytes comprised of four dummy bits, three page address bits (PA10 - PA8), and 17 dummy bits.
To perform a Sector 0a or Sector 0b erase with the binary page size (256 bytes), an opcode of 7Ch must be clocked into
the device followed by three address bytes comprised of five dummy bits, eight page address bits (A18 - A11), and
11 dummy bits. To perform a Sector 1-7 erase, an opcode of 7Ch must be clocked into the device followed by three
dummy bits, three page address bits (A18 - A16), and 16 dummy bits.
The page address bits are used to specify any valid address location within the sector to be erased. When a
low-to high transition occurs on the CS pin, the device will erase the selected sector. The erase operation is internally
self-timed and should take place in a maximum time of tSE. During this time, the RDY/BUSY bit in the Status Register will
indicate that the device is busy.
The device also incorporates an intelligent algorithm that can detect when a byte location fails to erase properly. If an
erase error arises, it will be indicated by the EPE bit in the Status Register.
Table 6-2. Sector Erase Addressing
6.10 Chip Erase
The Chip Erase command allows the entire main memory array to be erased can be erased at one time.
To execute the Chip Erase command, a 4-byte command sequence of C7h, 94h, 80h, and 9Ah must be clocked into the
device. Since the entire memory array is to be erased, no address bytes need to be clocked into the device, and any data
clocked in after the opcode will be ignored. After the last bit of the opcode sequence has been clocked in, the CS pin
must be deasserted to start the erase process. The erase operation is internally self-timed and should take place in a
time of tCE. During this time, the RDY/BUSY bit in the Status Register will indicate that the device is busy.
The Chip Erase command will not affect sectors that are protected or locked down; the contents of those sectors will
remain unchanged. Only those sectors that are not protected or locked down will be erased.
The WP pin can be asserted while the device is erasing, but protection will not be activated until the internal erase cycle
completes.
PA10/
A18
PA9/
A17
PA8/
A16
PA7/
A15
PA6/
A14
PA5/
A13
PA4/
A12
PA3/
A11
PA2/
A10
PA1/
A9
PA0/
A8 Sector
0 0 0 0 0 0 0 0 X X X 0a
0 0 0 0 0 0 0 1 X X X 0b
0 0 1 X X X X X X X X 1
0 1 0 X X X X X X X X 2
0 1 1 X X X X X X X X 3
1 0 0 X X X X X X X X 4
1 0 1 X X X X X X X X 5
1 1 0 X X X X X X X X 6
1 1 1 X X X X X X X X 7
15
AT45DB041E
8783L–DFLASH–7/2017
The device also incorporates an intelligent algorithm that can detect when a byte location fails to erase properly. If an
erase error arises, it will be indicated by the EPE bit in the Status Register.
Table 6-3. Chip Erase Command
Figure 6-1. Chip Erase
6.11 Program/Erase Suspend
In some code and data storage applications, it may not be possible for the system to wait the milliseconds required for
the Flash memory to complete a program or erase cycle. The Program/Erase Suspend command allows a program or
erase operation in progress to a particular 64KB sector of the main memory array to be suspended so that other device
operations can be performed.
Example: By suspending an erase operation to a particular sector, the system can perform functions such as a
program or read operation within a different 64KB sector. Other device operations, such as Read Status
Register, can also be performed while a program or erase operation is suspended.
To perform a Program/Erase Suspend, an opcode of B0h must be clocked into the device. No address bytes need to be
clocked into the device, and any data clocked in after the opcode will be ignored. When the CS pin is deasserted, the
program or erase operation currently in progress will be suspended within a time of tSUSP. One of the Program Suspend
bits (PS1 or PS2) or the Erase Suspend bit (ES) in the Status Register will then be set to the Logic 1 state. In addition,
the RDY/BUSY bit in the Status Register will indicate that the device is ready for another operation.
Read operations are not allowed to a 64KB sector that has had its program or erase operation suspended. If a read is
attempted to a suspended sector, then the device will output undefined data. Therefore, when performing a Continuous
Array Read operation and the device's internal address counter increments and crosses the sector boundary to a
suspended sector, the device will then start outputting undefined data continuously until the address counter increments
and crosses a sector boundary to an unsuspended sector.
A program operation is not allowed to a sector that has been erase suspended. If a program operation is attempted to an
erase suspended sector, then the program operation will abort.
During an Erase Suspend, a program operation to a different 64KB sector can be started and subsequently suspended.
This results in a simultaneous Erase Suspend/Program Suspend condition and will be indicated by the states of both the
ES and PS1 or PS2 bits in the Status Register being set to a Logic 1.
If a Reset command is performed, or if the RESET pin is asserted while a sector is erase suspended, then the suspend
operation will be aborted and the contents of the sector will be left in an undefined state. However, if a reset is performed
while a page is program or erase suspended, the suspend operation will abort but only the contents of the page that was
being programmed or erased will be undefined; the remaining pages in the 64KB sector will retain their previous
contents.
Command Byte 1 Byte 2 Byte 3 Byte 4
Chip Erase C7h 94h 80h 9Ah
C7h 94h 80h 9Ah
CS
Each transition represents eight bits
16
AT45DB041E
8783L–DFLASH–7/2017
Table 6-4. Operations Allowed and Not Allowed During Suspend
Command
Operation During
Program Suspend in
Buffer 1 (PS1)
Operation During
Program Suspend in
Buffer 2 (PS2)
Operation During
Erase Suspend (ES)
Read Commands
Read Array (All Opcodes) Allowed Allowed Allowed
Read Buffer 1 (All Opcodes) Allowed Allowed Allowed
Read Buffer 2 (All Opcodes) Allowed Allowed Allowed
Program and Erase Commands
Buffer 1 Write Not Allowed Allowed Allowed
Buffer 2 Write Allowed Not Allowed Allowed
Buffer 1 to Memory Program w/ Erase Not Allowed Not Allowed Not Allowed
Buffer 2 to Memory Program w/ Erase Not Allowed Not Allowed Not Allowed
Buffer 1 to Memory Program w/o Erase Not Allowed Not Allowed Allowed
Buffer 2 to Memory Program w/o Erase Not Allowed Not Allowed Allowed
Memory Program through Buffer 1 w/ Erase Not Allowed Not Allowed Not Allowed
Memory Program through Buffer 2 w/ Erase Not Allowed Not Allowed Not Allowed
Memory Program through Buffer 1 w/o Erase Not Allowed Not Allowed Allowed
Auto Page Rewrite through Buffer 1 Not Allowed Not Allowed Not Allowed
Auto Page Rewrite through Buffer 2 Not Allowed Not Allowed Not Allowed
Read-Modify-Write through Buffer 1 Not Allowed Not Allowed Not Allowed
Read-Modify-Write through Buffer 2 Not Allowed Not Allowed Not Allowed
Page Erase Not Allowed Not Allowed Not Allowed
Block Erase Not Allowed Not Allowed Not Allowed
Sector Erase Not Allowed Not Allowed Not Allowed
Chip Erase Not Allowed Not Allowed Not Allowed
Protection and Security Commands
Enable Sector Protection Not Allowed Not Allowed Not Allowed
Disable Sector Protection Not Allowed Not Allowed Not Allowed
Erase Sector Protection Register Not Allowed Not Allowed Not Allowed
Program Sector Protection Register Not Allowed Not Allowed Not Allowed
Read Sector Protection Register Allowed Allowed Allowed
Sector Lockdown Not Allowed Not Allowed Not Allowed
Read Sector Lockdown Allowed Allowed Allowed
Freeze Sector Lockdown State Not Allowed Not Allowed Not Allowed
Program Security Register Not Allowed Not Allowed Not Allowed
Read Security Register Allowed Allowed Allowed
Additional Commands
Main Memory to Buffer 1 Transfer Not Allowed Allowed Allowed
Main Memory to Buffer 2 Transfer Allowed Not Allowed Allowed
Main Memory to Buffer 1 Compare Not Allowed Allowed Allowed
Main Memory to Buffer 2 Compare Allowed Not Allowed Allowed
Enter Deep Power-Down Not Allowed Not Allowed Not Allowed
Resume from Deep Power-Down Not Allowed Not Allowed Not Allowed
Enter Ultra-Deep Power-Down mode Not Allowed Not Allowed Not Allowed
Read Configuration Register Allowed Allowed Allowed
Read Status Register Allowed Allowed Allowed
Read Manufacturer and Device ID Allowed Allowed Allowed
Reset (via Hardware or Software) Allowed Allowed Allowed
17
AT45DB041E
8783L–DFLASH–7/2017
6.12 Program/Erase Resume
The Program/Erase Resume command allows a suspended program or erase operation to be resumed and continue
where it left off.
To perform a Program/Erase Resume, an opcode of D0h must be clocked into the device. No address bytes need to be
clocked into the device, and any data clocked in after the opcode will be ignored. When the CS pin is deasserted, the
program or erase operation currently suspended will be resumed within a time of tRES. The PS1 bit, PS2 bit, or ES bit in
the Status Register will then be reset back to a Logic 0 state to indicate that the program or erase operation is no longer
suspended. In addition, the RDY/BUSY bit in the Status Register will indicate that the device is busy performing a
program or erase operation.
During a simultaneous Erase Suspend/Program Suspend condition, issuing the Program/Erase Resume command will
result in the program operation resuming first. After the program operation has been completed, the Program/Erase
Resume command must be issued again in order for the erase operation to be resumed.
While the device is busy resuming a program or erase operation, any attempts at issuing the Program/Erase Suspend
command will be ignored. Therefore, if a resumed program or erase operation needs to be subsequently suspended
again, the system must either wait the entire tRES time before issuing the Program/Erase Suspend command, or it must
check the status of the RDY/BUSY bit or the appropriate PS1, PS2, or ES bit in the Status Register to determine if the
previously suspended program or erase operation has resumed.
18
AT45DB041E
8783L–DFLASH–7/2017
7. Sector Protection
Two protection methods, hardware and software controlled, are provided for protection against inadvertent or erroneous
program and erase cycles. The software controlled method relies on the use of software commands to enable and
disable sector protection while the hardware controlled method employs the use of the Write Protect (WP) pin. The
selection of which sectors that are to be protected or unprotected against program and erase operations is specified in
the Nonvolatile Sector Protection Register. The status of whether or not sector protection has been enabled or disabled
by either the software or the hardware controlled methods can be determined by checking the Status Register.
7.1 Software Sector Protection
Software controlled protection is useful in applications in which the WP pin is not or cannot be controlled by a host
processor. In such instances, the WP pin may be left floating (the WP pin is internally pulled high) and sector protection
can be controlled using the Enable Sector Protection and Disable Sector Protection commands.
If the device is power cycled, then the software controlled protection will be disabled. Once the device is powered up, the
Enable Sector Protection command should be reissued if sector protection is desired and if the WP pin is not used.
7.1.1 Enable Sector Protection
Sectors specified for protection in the Sector Protection Register can be protected from program and erase operations by
issuing the Enable Sector Protection command. To enable the sector protection, a 4-byte command sequence of 3Dh,
2Ah, 7Fh, and A9h must be clocked into the device. After the last bit of the opcode sequence has been clocked in, the
CS pin must be deasserted to enable the Sector Protection.
Table 7-1. Enable Sector Protection Command
Figure 7-1. Enable Sector Protection
7.1.2 Disable Sector Protection
To disable the sector protection, a 4-byte command sequence of 3Dh, 2Ah, 7Fh, and 9Ah must be clocked into the
device. After the last bit of the opcode sequence has been clocked in, the CS pin must be deasserted to disable the
sector protection.
Table 7-2. Disable Sector Protection Command
Command Byte 1 Byte 2 Byte 3 Byte 4
Enable Sector Protection 3Dh 2Ah 7Fh A9h
3Dh 2Ah 7Fh 9Ah
CS
Each transition represents eight bits
SI
Command Byte 1 Byte 2 Byte 3 Byte 4
Disable Sector Protection 3Dh 2Ah 7Fh 9Ah
19
AT45DB041E
8783L–DFLASH–7/2017
Figure 7-2. Disable Sector Protection
7.2 Hardware Controlled Protection
Sectors specified for protection in the Sector Protection Register and the Sector Protection Register itself can be
protected from program and erase operations by asserting the WP pin and keeping the pin in its asserted state. The
Sector Protection Register and any sector specified for protection cannot be erased or programmed as long as the WP
pin is asserted. In order to modify the Sector Protection Register, the WP pin must be deasserted. If the WP pin is
permanently connected to GND, then the contents of the Sector Protection Register cannot be changed. If the WP pin is
deasserted or permanently connected to VCC, then the contents of the Sector Protection Register can be modified.
The WP pin will override the software controlled protection method but only for protecting the sectors.
Example: If the sectors were not previously protected by the Enable Sector Protection command, then simply
asserting the WP pin would enable the sector protection within the maximum specified tWPE time. When the
WP pin is deasserted, however, the sector protection would no longer be enabled (after the maximum
specified tWPD time) as long as the Enable Sector Protection command was not issued while the WP pin was
asserted. If the Enable Sector Protection command was issued before or while the WP pin was asserted,
then simply deasserting the WP pin would not disable the sector protection. In this case, the Disable Sector
Protection command would need to be issued while the WP pin is deasserted to disable the sector
protection. The Disable Sector Protection command is also ignored whenever the WP pin is asserted.
A noise filter is incorporated to help protect against spurious noise that may inadvertently assert or deassert the WP pin.
Figures 7-3 and Table 7-3 detail the sector protection status for various scenarios of the WP pin, the Enable Sector
Protection command, and the Disable Sector Protection command.
Figure 7-3. WP Pin and Protection Status
Table 7-3. WP Pin and Protection Status
3Dh 2Ah 7Fh 9Ah
CS
Each transition represents eight bits
SI
Time
Period WP Pin Enable Sector Protection Command
Disable Sector
Protection Command
Sector
Protection
Status
Sector
Protection
Register
1High
Command Not Issued Previously XDisabled Read/Write
—Issue Command Disabled Read/Write
Issue Command —Enabled Read/Write
2Low X X Enabled Read
3High
Command Issued During Period 1 or 2 Not Issued Yet Enabled Read/Write
—Issue Command Disabled Read/Write
Issue Command —Enabled Read/Write
WP
12
3
20
AT45DB041E
8783L–DFLASH–7/2017
7.3 Sector Protection Register
The nonvolatile Sector Protection Register specifies which sectors are to be protected or unprotected with either the
software or hardware controlled protection methods. The Sector Protection Register contains eight bytes of data, of
which byte locations zero through seven contain values that specify whether Sectors 0 through 7 will be protected or
unprotected. The Sector Protection Register is user modifiable and must be erased before it can be reprogrammed.
Table 7-4 illustrates the format of the Sector Protection Register.
Table 7-4. Sector Protection Register
Note: 1. The default values for bytes 0 through 7 are 00h when shipped from Adesto.
Table 7-5. Sector 0 (0a, 0b) Sector Protection Register Byte Value
Note: 1. x = Don’t care
7.3.1 Erase Sector Protection Register
In order to modify and change the values of the Sector Protection Register, it must first be erased using the Erase Sector
Protection Register command.
To erase the Sector Protection Register, a 4-byte command sequence of 3Dh, 2Ah, 7Fh, and CFh must be clocked into
the device. After the last bit of the opcode sequence has been clocked in, the CS pin must be deasserted to initiate the
internally self-timed erase cycle. The erasing of the Sector Protection Register should take place in a maximum time of
tPE. During this time, the RDY/BUSY bit in the Status Register will indicate that the device is busy. If the device is
powered-down before the completion of the erase cycle, then the contents of the Sector Protection Register cannot be
guaranteed.
The Sector Protection Register can be erased with sector protection enabled or disabled. Since the erased state (FFh) of
each byte in the Sector Protection Register is used to indicate that a sector is specified for protection, leaving the sector
protection enabled during the erasing of the register allows the protection scheme to be more effective in the prevention
of accidental programming or erasing of the device. If for some reason an erroneous program or erase command is sent
to the device immediately after erasing the Sector Protection Register and before the register can be reprogrammed,
then the erroneous program or erase command will not be processed because all sectors would be protected.
Table 7-6. Erase Sector Protection Register Command
Sector Number 0 (0a, 0b) 1 to 7
Protected
See Table 7-5
FFh
Unprotected 00h
Bit 7:6 Bit 5:4 Bit 3:2 Bit 1:0
Data
Value
Sector 0a
(Page 0-7)
Sector 0b
(Page 8-15) N/A N/A
Sectors 0a and 0b Unprotected 00 00 XX XX 0xh
Protect Sector 0a 11 00 XX XX Cxh
Protect Sector 0b 00 11 XX XX 3xh
Protect Sectors 0a and 0b 11 11 XX XX Fxh
Command Byte 1 Byte 2 Byte 3 Byte 4
Erase Sector Protection Register 3Dh 2Ah 7Fh CFh
21
AT45DB041E
8783L–DFLASH–7/2017
Figure 7-4. Erase Sector Protection Register
7.3.2 Program Sector Protection Register
Once the Sector Protection Register has been erased, it can be reprogrammed using the Program Sector Protection
Register command.
To program the Sector Protection Register, a 4-byte command sequence of 3Dh, 2Ah, 7Fh, and FCh must be clocked
into the device followed by eight bytes of data corresponding to Sectors 0 through 7. After the last bit of the opcode
sequence and data have been clocked in, the CS pin must be deasserted to initiate the internally self-timed program
cycle. The programming of the Sector Protection Register should take place in a maximum time of tP. During this time,
the RDY/BUSY bit in the Status Register will indicate that the device is busy. If the device is powered-down before the
completion of the erase cycle, then the contents of the Sector Protection Register cannot be guaranteed.
If the proper number of data bytes is not clocked in before the CS pin is deasserted, then the protection status of the
sectors corresponding to the bytes not clocked in cannot be guaranteed.
Example: If only the first two bytes are clocked in instead of the complete eight bytes, then the protection status of the
last 14 sectors cannot be guaranteed. Furthermore, if more than eight bytes of data is clocked into the
device, then the data will wrap back around to the beginning of the register. For instance, if nine bytes of
data are clocked in, then the ninth byte will be stored at byte location 0 of the Sector Protection Register.
The data bytes clocked into the Sector Protection Register need to be valid values (0xh, 3xh, Cxh, and Fxh for Sector 0a
or Sector 0b, and 00h or FFh for other sectors) in order for the protection to function correctly. If a non-valid value is
clocked into a byte location of the Sector Protection Register, then the protection status of the sector corresponding to
that byte location cannot be guaranteed.
Example: If a value of 17h is clocked into byte location 2 of the Sector Protection Register, then the protection status
of Sector 2 cannot be guaranteed.
The Sector Protection Register can be reprogrammed while the sector protection is enabled or disabled. Being able to
reprogram the Sector Protection Register with the sector protection enabled allows the user to temporarily disable the
sector protection to an individual sector rather than disabling sector protection completely.
The Program Sector Protection Register command utilizes Buffer 1 for processing. Therefore, the contents of Buffer 1
will be altered from its previous state when this command is issued.
Table 7-7. Program Sector Protection Register Command
Figure 7-5. Program Sector Protection Register
3Dh 2Ah 7Fh CFh
CS
Each transition represents eight bits
SI
Command Byte 1 Byte 2 Byte 3 Byte 4
Program Sector Protection Register 3Dh 2Ah 7Fh FCh
Data Byte
n
3Dh 2Ah 7Fh FCh Data Byte
n + 1
Data Byte
n + 7
CS
Each transition represents eight bits
SI
22
AT45DB041E
8783L–DFLASH–7/2017
7.3.3 Read Sector Protection Register
To read the Sector Protection Register, an opcode of 32h and three dummy bytes must be clocked into the device. After
the last bit of the opcode and dummy bytes have been clocked in, any additional clock pulses on the SCK pin will result
in the Sector Protection Register contents being output on the SO pin. The first byte (byte location 0) corresponds to
Sector 0 (0a and 0b), the second byte corresponds to Sector 1, and the last byte (byte location 7) corresponds to
Sector 7. Once the last byte of the Sector Protection Register has been clocked out, any additional clock pulses will result
in undefined data being output on the SO pin. The CS pin must be deasserted to terminate the Read Sector Protection
Register operation and put the output into a high-impedance state.
Table 7-8. Read Sector Protection Register Command
Note: 1. XX = Dummy byte
Figure 7-6. Read Sector Protection Register
7.3.4 About the Sector Protection Register
The Sector Protection Register is subject to a limit of 10,000 erase/program cycles. Users are encouraged to carefully
evaluate the number of times the Sector Protection Register will be modified during the course of the application’s life
cycle. If the application requires that the Security Protection Register be modified more than the specified limit of 10,000
cycles because the application needs to temporarily unprotect individual sectors (sector protection remains enabled
while the Sector Protection Register is reprogrammed), then the application will need to limit this practice. Instead, a
combination of temporarily unprotecting individual sectors along with disabling sector protection completely will need to
be implemented by the application to ensure that the limit of 10,000 cycles is not exceeded.
Command Byte 1 Byte 2 Byte 3 Byte 4
Read Sector Protection Register 32h XXh XXh XXh
32h XX XX XX
Data
n
Data
n + 1
CS
Data
n + 7
SI
SO
Each transition represents eight bits
23
AT45DB041E
8783L–DFLASH–7/2017
8. Security Features
8.1 Sector Lockdown
The device incorporates a sector lockdown mechanism that allows each individual sector to be permanently locked so
that it becomes read-only (ROM). This is useful for applications that require the ability to permanently protect a number of
sectors against malicious attempts at altering program code or security information.
Warning: Once a sector is locked down, it can never be erased or programmed, and it can never be unlocked.
To issue the sector lockdown command, a 4-byte command sequence of 3Dh, 2Ah, 7Fh, and 30h must be clocked into
the device followed by three address bytes specifying any address within the sector to be locked down. After the last
address bit has been clocked in, the CS pin must be deasserted to initiate the internally self-timed lockdown sequence.
The lockdown sequence should take place in a maximum time of tP. During this time, the RDY/BUSY bit in the Status
Register will indicate that the device is busy. If the device is powered-down before the completion of the lockdown
sequence, then the lockdown status of the sector cannot be guaranteed. In this case, it is recommended that the user
read the Sector Lockdown Register to determine the status of the appropriate sector lockdown bits or bytes and re-issue
the Sector Lockdown command if necessary.
Table 8-1. Sector Lockdown Command
Figure 8-1. Sector Lockdown
8.1.1 Read Sector Lockdown Register
The nonvolatile Sector Lockdown Register specifies which sectors in the main memory are currently unlocked or have
been permanently locked down. The Sector Lockdown Register is a read-only register and contains eight bytes of data
which correspond to Sectors 0 through 7. To read the Sector Lockdown Register, an opcode of 35h must be clocked into
the device followed by three dummy bytes. After the last bit of the opcode and dummy bytes have been clocked in, the
data for the contents of the Sector Lockdown Register will be clocked out on the SO pin. The first byte (byte
location 0) corresponds to Sector 0 (0a and 0b), the second byte corresponds to Sector 1, and the last byte (byte location
7) corresponds to Sector 7. After the last byte of the Sector Lockdown Register has been read, additional pulses on the
SCK pin will result in undefined data being output on the SO pin.
Deasserting the CS pin will terminate the Read Sector Lockdown Register operation and put the SO pin into a
high-impedance state. Table 8-2 details the format the Sector Lockdown Register.
Table 8-2. Sector Lockdown Register
Command Byte 1 Byte 2 Byte 3 Byte 4
Sector Lockdown 3Dh 2Ah 7Fh 30h
3Dh 2Ah 7Fh 30h
CS
Address
byte
Address
byte
Address
byte
SI
Each transition represents eight bits
Sector Number 0 (0a, 0b) 1 to 7
Locked See Table 8-3 FFh
Unlocked 00h
24
AT45DB041E
8783L–DFLASH–7/2017
Table 8-3. Sector 0 (0a and 0b) Sector Lockdown Register Byte Value
Table 8-4. Read Sector Lockdown Register Command
Figure 8-2. Read Sector Lockdown Register
8.1.2 Freeze Sector Lockdown
The Sector Lockdown command can be permanently disabled, and the current sector lockdown state can be
permanently frozen so that no additional sectors can be locked down aside from those already locked down. Any
attempts to issue the Sector Lockdown command after the Sector Lockdown State has been frozen will be ignored.
To issue the Freeze Sector Lockdown command, the CS pin must be asserted and the opcode sequence of 34h, 55h,
AAh, and 40h must be clocked into the device. Any additional data clocked into the device will be ignored. When the CS
pin is deasserted, the current sector lockdown state will be permanently frozen within a time of tLOCK. In addition, the SLE
bit in the Status Register will be permanently reset to a Logic 0 to indicate that the Sector Lockdown command is
permanently disabled.
Table 8-5. Freeze Sector Lockdown
Figure 8-3. Freeze Sector Lockdown
Bit 7:6 Bit 5:4 Bit 3:2 Bit 1:0
Data
Value
Sector 0a
(Page 0-7)
Sector 0b
(Page 8-15) N/A N/A
Sectors 0a and 0b Unlocked 00 00 00 00 00h
Sector 0a Locked 11 00 00 00 C0h
Sector 0b Locked 00 11 00 00 30h
Sectors 0a and 0b Locked 11 11 00 00 F0h
Command Byte 1 Byte 2 Byte 3 Byte 4
Read Sector Lockdown Register 35h XXh XXh XXh
32h XX XX XX
Data
n
Data
n + 1
CS
Data
n + 7
SI
SO
Each transition represents eight bits
Command Byte 1 Byte 2 Byte 3 Byte 4
Freeze Sector Lockdown 34h 55h AAh 40h
34h 55h AAh 40h
CS
SI
Each transition represents eight bits
25
AT45DB041E
8783L–DFLASH–7/2017
8.2 Security Register
The device contains a specialized Security Register that can be used for purposes such as unique device serialization or
locked key storage. The register is comprised of a total of 128 bytes that is divided into two portions. The first 64 bytes
(byte locations 0 through 63) of the Security Register are allocated as a One-Time Programmable space. Once these
64 bytes have been programmed, they cannot be erased or reprogrammed. The remaining 64 bytes of the register (byte
locations 64 through 127) are factory programmed by Adesto and will contain a unique value for each device. The factory
programmed data is fixed and cannot be changed.
Table 8-6. Security Register
8.2.1 Programming the Security Register
The user programmable portion of the Security Register does not need to be erased before it is programmed.
To program the Security Register, a 4-byte opcode sequence of 9Bh, 00h, 00h, and 00h must be clocked into the device.
After the last bit of the opcode sequence has been clocked into the device, the data for the contents of the 64-byte user
programmable portion of the Security Register must be clocked in.
After the last data byte has been clocked in, the CS pin must be deasserted to initiate the internally self-timed program
cycle. The programming of the Security Register should take place in a time of tP, during which time the RDY/BUSY bit in
the Status Register will indicate that the device is busy. If the device is powered-down during the program cycle, then the
contents of the 64-byte user programmable portion of the Security Register cannot be guaranteed.
If the full 64 bytes of data are not clocked in before the CS pin is deasserted, then the values of the byte locations not
clocked in cannot be guaranteed.
Example: If only the first two bytes are clocked in instead of the complete 64 bytes, then the remaining 62 bytes of the
user programmable portion of the Security Register cannot be guaranteed. Furthermore, if more than
64 bytes of data is clocked into the device, then the data will wrap back around to the beginning of the
register. For example, if 65 bytes of data are clocked in, then the 65th byte will be stored at byte location 0 of
the Security Register.
Warning: The user programmable portion of the Security Register can only be programmed one time.
Therefore, it is not possible, for example, to only program the first two bytes of the register and then program
the remaining 62 bytes at a later time.
The Program Security Register command utilizes Buffer 1 for processing. Therefore, the contents of
Buffer 1 will be altered from its previous state when this command is issued.
Figure 8-4. Program Security Register
Security Register Byte Number
0 1 · · · 63 64 65 · · · 127
Data Type One-Time User Programmable Factory Programmed by Adesto
Data
n
9Bh 00h 00h 00h Data
n + 1 Data
n + 63
CS
SI
Each transition represents eight bits
26
AT45DB041E
8783L–DFLASH–7/2017
8.2.2 Reading the Security Register
To read the Security Register, an opcode of 77h and three dummy bytes must be clocked into the device. After the last
dummy bit has been clocked in, the contents of the Security Register can be clocked out on the SO pin. After the last
byte of the Security Register has been read, additional pulses on the SCK pin will result in undefined data being output
on the SO pin.
Deasserting the CS pin will terminate the Read Security Register operation and put the SO pin into a high-impedance
state.
Figure 8-5. Read Security Register
77h XX XX XX
Data
n
Data
n + 1
CS
Data
n + x
SI
SO
Each transition represents eight bits
27
AT45DB041E
8783L–DFLASH–7/2017
9. Additional Commands
9.1 Main Memory Page to Buffer Transfer
A page of data can be transferred from the main memory to either Buffer 1 or Buffer 2. To transfer a page of data using
the standard DataFlash page size (264 bytes), an opcode of 53h for Buffer 1 or 55h for Buffer 2 must be clocked into the
device followed by three address bytes comprised of four dummy bits, 11 page address bits (PA10 - PA0) which specify
the page in main memory to be transferred, and nine dummy bits. To transfer a page of data using the binary page size
(256 bytes), an opcode of 53h for Buffer 1 and 55h for Buffer 2 must be clocked into the device followed by three address
bytes comprised of five dummy bits, 11 page address bits (A18 - A8) which specify the page in the main memory to be
transferred, and eight dummy bits.
The CS pin must be low while toggling the SCK pin to load the opcode and the three address bytes from the input pin
(SI). The transfer of the page of data from the main memory to the buffer will begin when the CS pin transitions from a
low to a high state. During the page transfer time (tXFR), the RDY/BUSY bit in the Status Register can be read to
determine whether or not the transfer has been completed.
9.2 Main Memory Page to Buffer Compare
A page of data in main memory can be compared to the data in Buffer 1 or Buffer 2 as a method to ensure that data was
successfully programmed after a Buffer to Main Memory Page Program command. To compare a page of data with the
standard DataFlash page size (264 bytes), an opcode of 60h for Buffer 1 or 61h for Buffer 2 must be clocked into the
device followed by three address bytes comprised of four dummy bits, 11 page address bits (PA10 - PA0) which specify
the page in the main memory to be compared to the buffer, and nine dummy bits. To compare a page of data with the
binary page size (256 bytes), an opcode of 60h for Buffer 1 or 61h for Buffer 2 must be clocked into the device followed
by three address bytes comprised of five dummy bits, 11 page address bits (A18 - A8) which specify the page in the main
memory to be compared to the buffer, and eight dummy bits.
The CS pin must be low while toggling the SCK pin to load the opcode and the address bytes from the input pin (SI). On
the low-to-high transition of the CS pin, the data bytes in the selected Main Memory Page will be compared with the data
bytes in Buffer 1 or Buffer 2. During the compare time (tCOMP), the RDY/BUSY bit in the Status Register will indicate that
the part is busy. On completion of the compare operation, bit 6 of the Status Register will be updated with the result of the
compare.
9.3 Auto Page Rewrite
This command only needs to be used if the possibility exists that static (non-changing) data may be stored in a page or
pages of a sector and the other pages of the same sector are erased and programmed a large number of times.
Applications that modify data in a random fashion within a sector may fall into this category. To preserve data integrity of
a sector, each page within a sector must be updated/rewritten at least once within every 50,000 cumulative page
erase/program operations within that sector. The Auto Page Rewrite command provides a simple and efficient method to
“refresh” a page in the main memory array in a single operation.
The Auto Page Rewrite command is a combination of the Main Memory Page to Buffer Transfer and Buffer to Main
Memory Page Program with Built-In Erase commands. With the Auto Page Rewrite command, a page of data is first
transferred from the main memory to Buffer 1 or Buffer 2 and then the same data (from Buffer 1 or Buffer 2) is
programmed back into the same page of main memory, essentially “refreshing” the contents of that page. To start the
Auto Page Rewrite operation with the standard DataFlash page size (264 bytes), a 1-byte opcode, 58H for Buffer 1 or
59H for Buffer 2, must be clocked into the device followed by three address bytes comprised of four dummy bits, 11 page
address bits (PA10-PA0) that specify the page in main memory to be rewritten, and nine dummy bits.
28
AT45DB041E
8783L–DFLASH–7/2017
To initiate an Auto Page Rewrite with the a binary page size (256 bytes), the opcode 58H for Buffer 1 or 59H for Buffer 2,
must be clocked into the device followed by three address bytes consisting of five dummy bits, 11 page address bits
(A18 - A8) that specify the page in the main memory that is to be rewritten, and eight dummy bits. When a low-to-high
transition occurs on the CS pin, the part will first transfer data from the page in main memory to a buffer and then
program the data from the buffer back into same page of main memory. The operation is internally self-timed and should
take place in a maximum time of tEP. During this time, the RDY/BUSY Status Register will indicate that the part is busy.
If a sector is programmed or reprogrammed sequentially page by page and the possibility does not exist that there will be
a page or pages of static data, then the programming algorithm shown in Figure 26-1 on page 61 is recommended.
Otherwise, if there is a chance that there may be a page or pages of a sector that will contain static data, then the
programming algorithm shown in Figure 26-2 on page 62 is recommended. Please contact Adesto for availability of
devices that are specified to exceed the 50,000 cycle cumulative limit.
Note: The Auto Page Rewrite command uses the same opcodes as the Read-Modify-Write command. If data
bytes are clocked into the device, then the device will perform a Read-Modify-Write operation. See the
Read-Modify-Write command description on page 12 for more details.
9.4 Status Register Read
The 2-byte Status Register can be used to determine the device's ready/busy status, page size, a Main Memory Page to
Buffer Compare operation result, the sector protection status, Freeze Sector Lockdown status, erase/program error
status, Program/Erase Suspend status, and the device density. The Status Register can be read at any time, including
during an internally self-timed program or erase operation.
To read the Status Register, the CS pin must first be asserted and then the opcode D7h must be clocked into the device.
After the opcode has been clocked in, the device will begin outputting Status Register data on the SO pin during every
subsequent clock cycle. After the second byte of the Status Register has been clocked out, the sequence will repeat
itself, starting again with the first byte of the Status Register, as long as the CS pin remains asserted and the clock pin is
being pulsed. The data in the Status Register is constantly being updated, so each repeating sequence may output new
data. The RDY/BUSY status is available for both bytes of the Status Register and is updated for each byte.
Deasserting the CS pin will terminate the Status Register Read operation and put the SO pin into a high-impedance
state. The CS pin can be deasserted at any time and does not require that a full byte of data be read.
Table 9-1. Status Register Format – Byte 1
Note: 1. R = Readable only
Bit Name Type(1) Description
7RDY/BUSY Ready/Busy Status R
0Device is busy with an internal operation.
1Device is ready.
6COMP Compare Result R
0Main memory page data matches buffer data.
1Main memory page data does not match buffer data.
5:2 DENSITY Density Code R0111 4-Mbit
1PROTECT Sector Protection Status R
0Sector protection is disabled.
1Sector protection is enabled.
0PAGE SIZE Page Size Configuration R
0Device is configured for standard DataFlash page size (264 bytes).
1Device is configured for “power of 2” binary page size (256 bytes).
29
AT45DB041E
8783L–DFLASH–7/2017
Table 9-2. Status Register Format – Byte 2
Note: 1. R = Readable only
9.4.1 RDY/BUSY Bit
The RDY/BUSY bit is used to determine whether or not an internal operation, such as a program or erase, is in progress.
To poll the RDY/BUSY bit to detect the completion of an internally timed operation, new Status Register data must be
continually clocked out of the device until the state of the RDY/BUSY bit changes from a Logic 0 to a Logic 1.
9.4.2 COMP Bit
The result of the most recent Main Memory Page to Buffer Compare operation is indicated using the COMP bit. If the
COMP bit is a Logic 1, then at least one bit of the data in the Main Memory Page does not match the data in the buffer.
9.4.3 DENSITY Bits
The device density is indicated using the DENSITY bits. For the AT45DB041E, the four bit binary value is 0111. The
decimal value of these four binary bits does not actually equate to the device density; the four bits represent a
combinational code relating to differing densities of DataFlash devices. The DENSITY bits are not the same as the
density code indicated in the JEDEC Device ID information. The DENSITY bits are provided only for backward
compatibility to older generation DataFlash devices.
9.4.4 PROTECT Bit
The PROTECT bit provides information to the user on whether or not the sector protection has been enabled or disabled,
either by the software-controlled method or the hardware-controlled method.
9.4.5 PAGE SIZE Bit
The PAGE SIZE bit indicates whether the buffer size and the page size of the main memory array is configured for the
“power of 2” binary page size (256 bytes) or the standard DataFlash page size (264 bytes).
Bit Name Type(1) Description
7RDY/BUSY Ready/Busy Status R
0Device is busy with an internal operation.
1Device is ready.
6RES Reserved for Future Use R 0 Reserved for future use.
5EPE Erase/Program Error R
0Erase or program operation was successful.
1Erase or program error detected.
4RES Reserved for Future Use R 0 Reserved for future use.
3SLE Sector Lockdown Enabled R
0Sector Lockdown command is disabled.
1Sector Lockdown command is enabled.
2PS2 Program Suspend Status
(Buffer 2) R
0No program operation has been suspended while using Buffer 2.
1A sector is program suspended while using Buffer 2.
1PS1 Program Suspend Status
(Buffer 1) R
0No program operation has been suspended while using Buffer 1.
1A sector is program suspended while using Buffer 1.
0ES Erase Suspend R
0No sectors are erase suspended.
1A sector is erase suspended.
30
AT45DB041E
8783L–DFLASH–7/2017
9.4.6 EPE Bit
The EPE bit indicates whether the last erase or program operation completed successfully or not. If at least one byte
during the erase or program operation did not erase or program properly, then the EPE bit will be set to the Logic 1 state.
The EPE bit will not be set if an erase or program operation aborts for any reason, such as an attempt to erase or
program a protected region or a locked down sector or an attempt to erase or program a suspended sector. The EPE bit
is updated after every erase and program operation.
9.4.7 SLE Bit
The SLE bit indicates whether or not the Sector Lockdown command is enabled or disabled. If the SLE bit is a Logic 1,
then the Sector Lockdown command is still enabled and sectors can be locked down. If the SLE bit is a Logic 0, then the
Sector Lockdown command has been disabled and no further sectors can be locked down.
9.4.8 PS2 Bit
The PS2 bit indicates if a program operation has been suspended while using Buffer 2. If the PS2 bit is a Logic 1, then a
program operation has been suspended while Buffer 2 was being used, and any command attempts that would modify
the contents of Buffer 2 will be ignored.
9.4.9 PS1 Bit
The PS1 bit indicates if a program operation has been suspended while using Buffer 1. If the PS1 bit is a Logic 1, then a
program operation has been suspended while Buffer 1 was being used, and any command attempts that would modify
the contents of Buffer 1 will be ignored.
9.4.10 The ES bit
The ES bit indicates whether or not an erase has been suspended. If the ES bit is a Logic 1, then an erase operation
(page, block, sector, or chip) has been suspended.
31
AT45DB041E
8783L–DFLASH–7/2017
10. Deep Power-Down
During normal operation, the device will be placed in the standby mode to consume less power as long as the CS pin
remains deasserted and no internal operation is in progress. The Deep Power-Down command offers the ability to place
the device into an even lower power consumption state called the Deep Power-Down mode.
When the device is in the Deep Power-Down mode, all commands including the Status Register Read command will be
ignored with the exception of the Resume from Deep Power-Down command. Since all commands will be ignored, the
mode can be used as an extra protection mechanism against program and erase operations.
Entering the Deep Power-Down mode is accomplished by simply asserting the CS pin, clocking in the opcode B9h, and
then deasserting the CS pin. Any additional data clocked into the device after the opcode will be ignored. When the CS
pin is deasserted, the device will enter the Deep Power-Down mode within the maximum time of tEDPD.
The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must be deasserted on an
even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and return to the standby mode
once the CS pin is deasserted. In addition, the device will default to the standby mode after a power cycle.
The Deep Power-Down command will be ignored if an internally self-timed operation such as a program or erase cycle is
in progress. The Deep Power-Down command must be reissued after the internally self-timed operation has been
completed in order for the device to enter the Deep Power-Down mode.
Figure 10-1. Deep Power-Down
SCK
CS
SI
SO
MSB
I
CC
2310
10111001
6754
OPCODE
HIGH-IMPEDANCE
Standby Mode Current
Active Current
Deep Power-Down Mode Current
t
EDPD
32
AT45DB041E
8783L–DFLASH–7/2017
10.1 Resume from Deep Power-Down
In order to exit the Deep Power-Down mode and resume normal device operation, the Resume from Deep Power-Down
command must be issued. The Resume from Deep Power-Down command is the only command that the device will
recognize while in the Deep Power-Down mode.
To resume from the Deep Power-Down mode, the CS pin must first be asserted and then the opcode ABh must be
clocked into the device. Any additional data clocked into the device after the opcode will be ignored. When the CS pin is
deasserted, the device will exit the Deep Power-Down mode and return to the standby mode within the maximum time of
tRDPD. After the device has returned to the standby mode, normal command operations such as Continuous Array Read
can be resumed.
If the complete opcode is not clocked in before the CS pin is deasserted, or if the CS pin is not deasserted on an even
byte boundary (multiples of eight bits), then the device will abort the operation and return to the Deep Power-Down
mode.
Figure 10-2. Resume from Deep Power-Down
SCK
CS
SI
SO
MSB
ICC
2310
10101011
6754
Opcode
High-impedance
Deep Power-Down Mode Current
Active Current
Standby Mode Current
t
RDPD
33
AT45DB041E
8783L–DFLASH–7/2017
10.2 Ultra-Deep Power-Down
The Ultra-Deep Power-Down mode allows the device to consume far less power compared to the standby and Deep
Power-Down modes by shutting down additional internal circuitry. Since almost all active circuitry is shutdown in this
mode to conserve power, the contents of the SRAM buffers cannot be maintained. Therefore, any data stored in the
SRAM buffers will be lost once the device enters the Ultra-Deep Power-Down mode.
When the device is in the Ultra-Deep Power-Down mode, all commands including the Status Register Read and Resume
from Deep Power-Down commands will be ignored. Since all commands will be ignored, the mode can be used as an
extra protection mechanism against program and erase operations.
Entering the Ultra-Deep Power-Down mode is accomplished by simply asserting the CS pin, clocking in the opcode 79h,
and then deasserting the CS pin. Any additional data clocked into the device after the opcode will be ignored. When the
CS pin is deasserted, the device will enter the Ultra-Deep Power-Down mode within the maximum time of tEUDPD.
The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must be deasserted on an
even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and return to the standby mode
once the CS pin is deasserted. In addition, the device will default to the standby mode after a power cycle.
The Ultra-Deep Power-Down command will be ignored if an internally self-timed operation such as a program or erase
cycle is in progress. The Ultra-Deep Power-Down command must be reissued after the internally self-timed operation
has been completed in order for the device to enter the Ultra-Deep Power-Down mode.
Figure 10-3. Ultra-Deep Power-Down
SCK
CS
SI
SO
MSB
ICC
2310
0
6754
Opcode
High-impedance
Ultra-Deep Power-Down Mode Current
Active Current
Standby Mode Current
tEUDPD
1111001
34
AT45DB041E
8783L–DFLASH–7/2017
10.2.1 Exit Ultra-Deep Power-Down
To exit from the Ultra-Deep Power-Down mode, the CS pin must simply be pulsed by asserting the CS pin, waiting the
minimum necessary tCSLU time, and then deasserting the CS pin again. To facilitate simple software development, a
dummy byte opcode can also be entered while the CS pin is being pulsed just as in a normal operation like the Program
Suspend operation; the dummy byte opcode is simply ignored by the device in this case. After the CS pin has been
deasserted, the device will exit from the Ultra-Deep Power-Down mode and return to the standby mode within a
maximum time of tXUDPD. If the CS pin is reasserted before the tXUDPD time has elapsed in an attempt to start a new
operation, then that operation will be ignored and nothing will be performed. The system must wait for the device to return
to the standby mode before normal command operations such as Continuous Array Read can be resumed.
Since the contents of the SRAM buffers cannot be maintained while in the Ultra-Deep Power-Down mode, the SRAM
buffers will contain undefined data when the device returns to the standby mode.
Figure 10-4. Exit Ultra-Deep Power-Down
CS
SO
ICC
High-impedance
Ultra-Deep Power-Down Mode Current
Active Current
Standby Mode Current
t
XUDPD
tCSLU
35
AT45DB041E
8783L–DFLASH–7/2017
11. Buffer and Page Size Configuration
The memory array of DataFlash devices is actually larger than other Serial Flash devices in that extra user-accessible
bytes are provided in each page of the memory array. For the AT45DB041E, there are an extra eight bytes of memory in
each page for a total of an extra 16KB (128-Kbits) of user-accessible memory.
Some applications, however, may not want to take advantage of this extra memory and instead architect their software to
operate on a “power of 2” binary, logical addressing scheme. To allow this, the DataFlash can be configured so that the
buffer and page sizes are 256 bytes instead of the standard 264 bytes. In addition, the configuration of the buffer and
page sizes is reversible and can be changed from 264 bytes to 256 bytes or from 256 bytes to 264 bytes. The configured
setting is stored in an internal nonvolatile register so that the buffer and page size configuration is not affected by power
cycles. The nonvolatile register has a limit of 10,000 erase/program cycles; therefore, care should be taken to not switch
between the size options more than 10,000 times.
Devices are initially shipped from Adesto with the buffer and page sizes set to 264 bytes. Devices can be ordered from
Adesto pre-configured for the “power of 2” binary size of 256 bytes. For details, see Section 27., Ordering Information on
page 63.
To configure the device for “power of 2” binary page size (256 bytes), a 4-byte opcode sequence of 3Dh, 2Ah, 80h, and
A6h must be clocked into the device. After the last bit of the opcode sequence has been clocked in, the CS pin must be
deasserted to initiate the internally self-timed configuration process and nonvolatile register program cycle. The
programming of the nonvolatile register should take place in a time of tEP, during which time the RDY/BUSY bit in the
Status Register will indicate that the device is busy. The device does not need to be power cycled after the completion of
the configuration process and register program cycle in order for the buffer and page size to be configured to 256 bytes.
To configure the device for standard DataFlash page size (264 bytes), a 4-byte opcode sequence of 3Dh, 2Ah, 80h, and
A7h must be clocked into the device. After the last bit of the opcode sequence has been clocked in, the CS pin must be
deasserted to initiate the internally self-timed configuration process and nonvolatile register program cycle. The
programming of the nonvolatile register should take place in a time of tEP, during which time the RDY/BUSY bit in the
Status Register will indicate that the device is busy. The device does not need to be power cycled after the completion of
the configuration process and register program cycle in order for the buffer and page size to be configured to 264 bytes.
Table 11-1. Buffer and Page Size Configuration Commands
Figure 11-1. Buffer and Page Size Configuration
Command Byte 1 Byte 2 Byte 3 Byte 4
“Power of 2” binary page size (256 bytes) 3Dh 2Ah 80h A6h
DataFlash page size (264 bytes) 3Dh 2Ah 80h A7h
CS
SI
3Dh 2Ah 80h Opcode
Byte 4
Each transition represents eight bits
36
AT45DB041E
8783L–DFLASH–7/2017
12. Manufacturer and Device ID Read
Identification information can be read from the device to enable systems to electronically query and identify the device
while it is in the system. The identification method and the command opcode comply with the JEDEC Standard for
“Manufacturer and Device ID Read Methodology for SPI Compatible Serial Interface Memory Devices”. The type of
information that can be read from the device includes the JEDEC-defined Manufacturer ID, the vendor-specific
Device ID, and the vendor-specific Extended Device Information.
The Read Manufacturer and Device ID command is limited to a maximum clock frequency of fCLK. Since not all Flash
devices are capable of operating at very high clock frequencies, applications should be designed to read the
identification information from the devices at a reasonably low clock frequency to ensure that all devices to be used in the
application can be identified properly. Once the identification process is complete, the application can then increase the
clock frequency to accommodate specific Flash devices that are capable of operating at the higher clock frequencies.
To read the identification information, the CS pin must first be asserted and then the opcode 9Fh must be clocked into
the device. After the opcode has been clocked in, the device will begin outputting the identification data on the SO pin
during the subsequent clock cycles. The first byte to be output will be the Manufacturer ID, followed by two bytes of the
Device ID information. The fourth byte output will be the Extended Device Information (EDI) String Length, which will be
01h indicating that one byte of EDI data follows. After the one byte of EDI data is output, the SO pin will go into a
high-impedance state; therefore, additional clock cycles will have no affect on the SO pin and no data will be output. As
indicated in the JEDEC Standard, reading the EDI String Length and any subsequent data is optional.
Deasserting the CS pin will terminate the Manufacturer and Device ID Read operation and put the SO pin into a
high-impedance state. The CS pin can be deasserted at any time and does not require that a full byte of data be read.
Table 12-1. Manufacturer and Device ID Information
Table 12-2. Manufacturer and Device ID Details
Byte No. Data Type Value
1Manufacturer ID 1Fh
2Device ID (Byte 1) 24h
3Device ID (Byte 2) 00h
4Extended Device Information (EDI) String Length 01h
5[Optional to Read] EDI Byte 1 00h
Data Type Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
Hex
Value Details
Manufacturer ID
JEDEC Assigned Code
1Fh JEDEC code: 0001 1111 (1Fh for Adesto)
00011111
Device ID (Byte 1)
Family Code Density Code
24h Family code: 001 (AT45Dxxx Family)
Density code: 00100 (4-Mbit)
00100100
Device ID (Byte 2)
Sub Code Product Variant
00h Sub code: 000 (Standard Series)
Product variant: 00000
00000000
37
AT45DB041E
8783L–DFLASH–7/2017
Table 12-3. EDI Data
Figure 12-1. Read Manufacturer and Device ID
Byte Number Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
Hex
Value Details
5
RFU Device Revision
00h RFU: Reserved for Future Use
Device revision: 00000 (Initial Version)
0 0 0 0 0 0 0 0
SCK
CS
SI
SO
60
9Fh
87 47
Opcode
1Fh 00h 01h 00h
Manufacturer ID Device ID
Byte 1
Device ID
Byte 2
EDI
String Length
EDI
Data Byte 1
High-impedance
14 1615 22 2423 38 403930 3231
Note: Each transition shown for SI and SO represents one byte (8 bits)
24h
38
AT45DB041E
8783L–DFLASH–7/2017
13. Software Reset
In some applications, it may be necessary to prematurely terminate a program or erase cycle early rather than wait the
hundreds of microseconds or milliseconds necessary for the program or erase operation to complete normally. The
Software Reset command allows a program or erase operation in progress to be ended abruptly and returns the device
to an idle state.
To perform a Software Reset, the CS pin must be asserted and a 4-byte command sequence of F0h, 00h, 00h, and 00h
must be clocked into the device. Any additional data clocked into the device after the last byte will be ignored. When the
CS pin is deasserted, the program or erase operation currently in progress will be terminated within a time tSWRST. Since
the program or erase operation may not complete before the device is reset, the contents of the page being programmed
or erased cannot be guaranteed to be valid.
The Software Reset command has no effect on the states of the Sector Protection Register, the Sector Lockdown
Register, or the buffer and page size configuration. The PS2, PS1, and ES bits of the Status Register, however, will be
reset back to their default states. If a Software Reset operation is performed while a sector is erase suspended, the
suspend operation will abort and the contents of the page or block being erased in the suspended sector will be left in an
undefined state. If a Software Reset is performed while a sector is program suspended, the suspend operation will abort
and the contents of the page that was being programmed and subsequently suspended will be undefined. The remaining
pages in the sector will retain their previous contents.
The complete 4-byte opcode must be clocked into the device before the CS pin is deasserted, and the CS pin must be
deasserted on a byte boundary (multiples of eight bits); otherwise, no reset operation will be performed.
Table 13-1. Software Reset
Figure 13-1. Software Reset
Command Byte 1 Byte 2 Byte 3 Byte 4
Software Reset F0h 00h 00h 00h
CS
SI
F0h 00h 00h 00h
Each transition represents eight bits
39
AT45DB041E
8783L–DFLASH–7/2017
14. Operation Mode Summary
The commands described previously can be grouped into four different categories to better describe which commands
can be executed at what times.
Group A commands consist of:
1. Main Memory Page Read
2. Continuous Array Read (SPI)
3. Read Sector Protection Register
4. Read Sector Lockdown Register
5. Read Security Register
6. Buffer 1 (or 2) Read
Group B commands consist of:
1. Page Erase
2. Block Erase
3. Sector Erase
4. Chip Erase
5. Main Memory Page to Buffer 1 (or 2) Transfer
6. Main Memory Page to Buffer 1 (or 2) Compare
7. Buffer 1 (or 2) to Main Memory Page Program with Built-In Erase
8. Buffer 1 (or 2) to Main Memory Page Program without Built-In Erase
9. Main Memory Page Program through Buffer 1 (or 2) with Built-In Erase
10. Main Memory Byte/Page Program through Buffer 1 without Built-In Erase
11. Auto Page Rewrite
12. Read-Modify-Write
Group C commands consist of:
1. Buffer 1 (or 2) Write
2. Status Register Read
3. Manufacturer and Device ID Read
Group D commands consist of:
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
5. Buffer and Page Size Configuration
6. Freeze Sector Lockdown
If a Group A command is in progress (not fully completed), then another command in Group A, B, C, or D should not be
started. However, during the internally self-timed portion of Group B commands, any command in Group C can be
executed. The Group B commands using Buffer 1 should use Group C commands using Buffer 2 and vice versa. Finally,
during the internally self-timed portion of a Group D command, only the Status Register Read command should be
executed.
Most of the commands in Group B can be suspended and resumed, except the Buffer Transfer, Buffer Compare, Auto
Page Rewrite and Read-Modify-Write operations. If a Group B command is suspended, all of the Group A commands
can be executed. See Table 6-4 to determine which of the Group B, Group C, and Group D commands are allowed.
40
AT45DB041E
8783L–DFLASH–7/2017
15. Command Tables
Table 15-1. Read Commands
Table 15-2. Program and Erase Commands
Command Opcode
Main Memory Page Read D2h
Continuous Array Read (Low Power Mode) 01h
Continuous Array Read (Low Frequency) 03h
Continuous Array Read (High Frequency) 0Bh
Continuous Array Read (High Frequency) 1Bh
Continuous Array Read (Legacy Command – Not Recommended for New Designs) E8h
Buffer 1 Read (Low Frequency) D1h
Buffer 2 Read (Low Frequency) D3h
Buffer 1 Read (High Frequency) D4h
Buffer 2 Read (High Frequency) D6h
Command Opcode
Buffer 1 Write 84h
Buffer 2 Write 87h
Buffer 1 to Main Memory Page Program with Built-In Erase 83h
Buffer 2 to Main Memory Page Program with Built-In Erase 86h
Buffer 1 to Main Memory Page Program without Built-In Erase 88h
Buffer 2 to Main Memory Page Program without Built-In Erase 89h
Main Memory Page Program through Buffer 1 with Built-In Erase 82h
Main Memory Page Program through Buffer 2 with Built-In Erase 85h
Main Memory Byte/Page Program through Buffer 1 without Built-In Erase 02h
Page Erase 81h
Block Erase 50h
Sector Erase 7Ch
Chip Erase C7h + 94h + 80h + 9Ah
Program/Erase Suspend B0h
Program/Erase Resume D0h
Read-Modify-Write through Buffer 1 58h
Read-Modify-Write through Buffer 2 59h
41
AT45DB041E
8783L–DFLASH–7/2017
Table 15-3. Protection and Security Commands
Table 15-4. Additional Commands
Table 15-5. Legacy Commands(1)
Note: 1. Legacy commands are not recommended for new designs.
Command Opcode
Enable Sector Protection 3Dh + 2Ah + 7Fh + A9h
Disable Sector Protection 3Dh + 2Ah + 7Fh + 9Ah
Erase Sector Protection Register 3Dh + 2Ah + 7Fh + CFh
Program Sector Protection Register 3Dh + 2Ah + 7Fh + FCh
Read Sector Protection Register 32h
Sector Lockdown 3Dh + 2Ah + 7Fh + 30h
Read Sector Lockdown Register 35h
Freeze Sector Lockdown 34h + 55h + AAh + 40h
Program Security Register 9Bh + 00h + 00h + 00h
Read Security Register 77h
Command Opcode
Main Memory Page to Buffer 1 Transfer 53h
Main Memory Page to Buffer 2 Transfer 55h
Main Memory Page to Buffer 1 Compare 60h
Main Memory Page to Buffer 2 Compare 61h
Auto Page Rewrite 58h
Auto Page Rewrite 59h
Deep Power-Down B9h
Resume from Deep Power-Down ABh
Ultra-Deep Power-Down 79h
Status Register Read D7h
Manufacturer and Device ID Read 9Fh
Configure “Power of 2” (Binary) Page Size 3Dh + 2Ah + 80h + A6h
Configure Standard DataFlash Page Size 3Dh + 2Ah + 80h + A7h
Software Reset F0h + 00h + 00h + 00h
Command Opcode
Buffer 1 Read 54H
Buffer 2 Read 56H
Main Memory Page Read 52H
Continuous Array Read 68H
Status Register Read 57H
42
AT45DB041E
8783L–DFLASH–7/2017
Table 15-6. Detailed Bit-level Addressing Sequence for Binary Page Size (256 bytes)
Note: 1. Shown to indicate when the Auto Page Rewrite operation is executed.
2. Shown to indicate when the Read-Modify-Write operation is executed.
3. X = Dummy Bit
Page Size = 256 bytes Address Byte Address Byte Address Byte
Additional
Dummy
Bytes
Opcode Opcode
Reserved
Reserved
Reserved
Reserved
Reserved
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
01h 0 0 0 0 0 0 0 1 X X X X X A A A A A A A A A A A A A A A A A A A N/A
02h 0 0 0 0 0 0 1 0 X X X X X A A A A A A A A A A A A A A A A A A A N/A
03h 0 0 0 0 0 0 1 1 X X X X X A A A A A A A A A A A A A A A A A A A N/A
0Bh 0 0 0 0 1 0 1 1 X X X X X A A A A A A A A A A A A A A A A A A A 1
1Bh 0 0 0 1 1 0 1 1 X X X X X A A A A A A A A A A A A A A A A A A A 2
32h 0 0 1 1 0 0 1 0 X X X X X X X X X X X X X X X X X X X X X X X X N/A
35h 0 0 1 1 0 1 0 1 X X X X X X X X X X X X X X X X X X X X X X X X N/A
50h 0 1 0 1 0 0 0 0 X X X X X A A A A A A A A X X X X X X X X X X X N/A
53h 0 1 0 1 0 0 1 1 X X X X X A A A A A A A A A A A X X X X X X X X N/A
55h 0 1 0 1 0 1 0 1 X X X X X A A A A A A A A A A A X X X X X X X X N/A
58h(1) 0 1 0 1 1 0 0 0 X X X X X A A A A A A A A A A A X X X X X X X X N/A
59h(1) 0 1 0 1 1 0 0 1 X X X X X A A A A A A A A A A A X X X X X X X X N/A
58h(2) 0 1 0 1 1 0 0 0 X X X X X A A A A A A A A A A A A A A A A A A A N/A
59h(2) 0 1 0 1 1 0 0 1 X X X X X A A A A A A A A A A A A A A A A A A A N/A
60h 0 1 1 0 0 0 0 0 X X X X X A A A A A A A A A A A X X X X X X X X N/A
61h 0 1 1 0 0 0 0 1 X X X X X A A A A A A A A A A A X X X X X X X X N/A
77h 0 1 1 1 0 1 1 1 X X X X X X X X X X X X X X X X X X X X X X X X N/A
79h 0 1 1 1 1 0 0 1 N/A N/A N/A N/A
7Ch 0 1 1 1 1 1 0 0 X X X X X A A A X X X X X X X X X X X X X X X X N/A
81h 1 0 0 0 0 0 0 1 X X X X X A A A A A A A A A A A X X X X X X X X N/A
82h 1 0 0 0 0 0 1 0 X X X X X A A A A A A A A A A A A A A A A A A A N/A
83h 1 0 0 0 0 0 1 1 X X X X X A A A A A A A A A A A X X X X X X X X N/A
84h 1 0 0 0 0 1 0 0 X X X X X X X X X X X X X X X X A A A A A A A A N/A
85h 1 0 0 0 0 1 0 1 X X X X X A A A A A A A A A A A A A A A A A A A N/A
86h 1 0 0 0 0 1 1 0 X X X X X A A A A A A A A A A A X X X X X X X X N/A
87h 1 0 0 0 0 1 1 1 X X X X X X X X X X X X X X X X A A A A A A A A N/A
88h 1 0 0 0 1 0 0 0 X X X X X A A A A A A A A A A A X X X X X X X X N/A
89h 1 0 0 0 1 0 0 1 X X X X X A A A A A A A A A A A X X X X X X X X N/A
9Fh 1 0 0 1 1 1 1 1 N/A N/A N/A N/A
B9h 1 0 1 1 1 0 0 1 N/A N/A N/A N/A
ABh 1 0 1 0 1 0 1 1 N/A N/A N/A N/A
B0h 1 0 1 1 0 0 0 0 N/A N/A N/A N/A
D0h 1 1 0 1 0 0 0 0 N/A N/A N/A N/A
D1h 1 1 0 1 0 0 0 1 X X X X X X X X X X X X X X X X A A A A A A A A N/A
D2h 1 1 0 1 0 0 1 0 X X X X X A A A A A A A A A A A A A A A A A A A 4
D3h 1 1 0 1 0 0 1 1 X X X X X X X X X X X X X X X X A A A A A A A A N/A
D4h 1 1 0 1 0 1 0 0 X X X X X X X X X X X X X X X X A A A A A A A A 1
D6h 1 1 0 1 0 1 1 0 X X X X X X X X X X X X X X X X A A A A A A A A 1
D7h 1 1 0 1 0 1 1 1 N/A N/A N/A N/A
43
AT45DB041E
8783L–DFLASH–7/2017
Table 15-7. Detailed Bit-level Addressing Sequence for Standard DataFlash Page Size (264 bytes)
Notes: 1. Shown to indicate when the Auto Page Rewrite operation is executed.
2. Shown to indicate when the Read-Modify-Write operation is executed.
3. P = Page Address Bit, B = Byte/Buffer Address Bit, X = Dummy Bit
Page Size = 264 bytes Address Byte Address Byte Address Byte
Additional
Dummy
Bytes
Opcode Opcode
Reserved
Reserved
Reserved
Reserved
PA10
PA9
PA8
PA7
PA6
PA5
PA4
PA3
PA2
PA1
PA0
BA8
BA7
BA6
BA5
BA4
BA3
BA2
BA1
BA0
01h 0 0 0 0 0 0 0 1 X X X X P P P P P P P P P P P B B B B B B B B B N/A
02h 0 0 0 0 0 0 1 0 X X X X P P P P P P P P P P P B B B B B B B B B N/A
03h 0 0 0 0 0 0 1 1 X X X X P P P P P P P P P P P B B B B B B B B B N/A
0Bh 0 0 0 0 1 0 1 1 X X X X P P P P P P P P P P P B B B B B B B B B 1
1Bh 0 0 0 1 1 0 1 1 X X X X P P P P P P P P P P P B B B B B B B B B 2
32h 0 0 1 1 0 0 1 0 X X X X X X X X X X X X X X X X X X X X X X X X N/A
35h 0 0 1 1 0 1 0 1 X X X X X X X X X X X X X X X X X X X X X X X X N/A
50h 0 1 0 1 0 0 0 0 X X X X P P P P P P P P X X X X X X X X X X X X N/A
53h 0 1 0 1 0 0 1 1 X X X X P P P P P P P P P P P X X X X X X X X X N/A
55h 0 1 0 1 0 1 0 1 X X X X P P P P P P P P P P P X X X X X X X X X N/A
58h(1) 0 1 0 1 1 0 0 0 X X X X P P P P P P P P P P P X X X X X X X X X N/A
59h(1) 0 1 0 1 1 0 0 1 X X X X P P P P P P P P P P P X X X X X X X X X N/A
58h(2) 0 1 0 1 1 0 0 0 X X X X P P P P P P P P P P P B B B B B B B B B N/A
59h(2) 0 1 0 1 1 0 0 1 X X X X P P P P P P P P P P P B B B B B B B B B N/A
60h 0 1 1 0 0 0 0 0 X X X X P P P P P P P P P P P X X X X X X X X X N/A
61h 0 1 1 0 0 0 0 1 X X X X P P P P P P P P P P P X X X X X X X X X N/A
77h 0 1 1 1 0 1 1 1 X X X X X X X X X X X X X X X X X X X X X X X X N/A
79h 0 1 1 1 1 0 0 1 N/A N/A N/A N/A
7Ch 0 1 1 1 1 1 0 0 X X X X P P P P P P P P X X X X X X X X X X X X N/A
81h 1 0 0 0 0 0 0 1 X X X X P P P P P P P P P P P P X X X X X X X X N/A
82h 1 0 0 0 0 0 1 0 X X X X P P P P P P P P P P P B B B B B B B B B N/A
83h 1 0 0 0 0 0 1 1 X X X X P P P P P P P P P P P X X X X X X X X X N/A
84h 1 0 0 0 0 1 0 0 X X X X X X X X X X X X X X X B B B B B B B B B N/A
85h 1 0 0 0 0 1 0 1 X X X X P P P P P P P P P P P B B B B B B B B B N/A
86h 1 0 0 0 0 1 1 0 X X X X P P P P P P P P P P P X X X X X X X X X N/A
87h 1 0 0 0 0 1 1 1 X X X X X X X X X X X X X X X B B B B B B B B B N/A
88h 1 0 0 0 1 0 0 0 X X X X P P P P P P P P P P P X X X X X X X X X N/A
89h 1 0 0 0 1 0 0 1 X X X X P P P P P P P P P P P X X X X X X X X X N/A
9Fh 1 0 0 1 1 1 1 1 N/A N/A N/A N/A
B9h 1 0 1 1 1 0 0 1 N/A N/A N/A N/A
ABh 1 0 1 0 1 0 1 1 N/A N/A N/A N/A
B0h 1 0 1 1 0 0 0 0 N/A N/A N/A N/A
D0h 1 1 0 1 0 0 0 0 N/A N/A N/A N/A
D1h 1 1 0 1 0 0 0 1 X X X X X X X X X X X X X X X B B B B B B B B B N/A
D2h 1 1 0 1 0 0 1 0 X X X X P P P P P P P P P P P B B B B B B B B B 4
D3h 1 1 0 1 0 0 0 1 X X X X X X X X X X X X X X X B B B B B B B B B N/A
D4h 1 1 0 1 0 1 0 0 X X X X X X X X X X X X X X X B B B B B B B B B 1
D6h 1 1 0 1 0 1 1 0 X X X X X X X X X X X X X X X B B B B B B B B B 1
D7h 1 1 0 1 0 1 1 1 N/A N/A N/A N/A
44
AT45DB041E
8783L–DFLASH–7/2017
16. Power-On/Reset State
When power is first applied to the device, or when recovering from a reset condition, the output pin (SO) will be in a high
impedance state, and a high-to-low transition on the CSB pin will be required to start a valid instruction. The SPI mode
(Mode 3 or Mode 0) will be automatically selected on every falling edge of CSB by sampling the inactive clock state.
16.1 Power-Up/Power-Down Voltage and Timing Requirements
As the device initializes, there will be a transient current demand. The system needs to be capable of providing this
current to ensure correct initialization. During power-up, the device must not be READ for at least the minimum tVCSL time
after the supply voltage reaches the minimum VPOR level (VPOR min). While the device is being powered-up, the internal
Power-On Reset (POR) circuitry keeps the device in a reset mode until the supply voltage rises above the minimum Vcc.
During this time, all operations are disabled and the device will not respond to any commands.
If the first operation to the device after power-up will be a program or erase operation, then the operation cannot be
started until the supply voltage reaches the minimum VCC level and an internal device delay has elapsed. This delay will
be a maximum time of tPUW. After the tPUW time, the device will be in the standby mode if CSB is at logic high or active
mode if CSB is at logic low. For the case of Power-down then Power-up operation, or if a power interruption occurs (such
that VCC drops below VPOR max), the Vcc of the Flash device must be maintained below VPWD for at least the minimum
specified TPWD time. This is to ensure the Flash device will reset properly after a power interruption.
Table 16-1. Voltage and Timing Requirements for Power-Up/Power-Down
Figure 16-1. Power-Up Timing
Symbol Parameter Min Max Units
VPWD (1)
1. Not 100% tested (value guaranteed by design and characterization).
VCC for device initialization 1.0 V
tPWD(1) Minimum duration for device initialization 300 µs
tVCSL Minimum VCC to chip select low time for Read command 70 µs
tVR(1) VCC rise time 1500000 µs/V
VPOR Power on reset voltage 1.45 1.6 V
tPUW Power up delay time before Program or Erase is allowed 3ms
VCC
VPOR max
Max VPWD
Time
tPWD
tPUW
Full Operation Permitted
tVR
tVCSL
Read Operation
Permitted
45
AT45DB041E
8783L–DFLASH–7/2017
17. System Considerations
The serial interface is controlled by the Serial Clock (SCK), Serial Input (SI), and Chip Select (CS) pins. These signals
must rise and fall monotonically and be free from noise. Excessive noise or ringing on these pins can be misinterpreted
as multiple edges and cause improper operation of the device. PCB traces must be kept to a minimum distance or
appropriately terminated to ensure proper operation. If necessary, decoupling capacitors can be added on these pins to
provide filtering against noise glitches.
As system complexity continues to increase, voltage regulation is becoming more important. A key element of any
voltage regulation scheme is its current sourcing capability. Like all Flash memories, the peak current for DataFlash
devices occurs during the programming and erasing operations. The supply voltage regulator needs to be able to supply
this peak current requirement. An under specified regulator can cause current starvation. Besides increasing system
noise, current starvation during programming or erasing can lead to improper operation and possible data corruption.
46
AT45DB041E
8783L–DFLASH–7/2017
18. Electrical Specifications
18.1 Absolute Maximum Ratings*
18.2 DC and AC Operating Range
Temperature under Bias . . . . . . . -55C to +125C*Notice: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only
and functional operation of the device at these or
any other conditions beyond those indicated in
the operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.Voltage extremes referenced in the
“Absolute Maximum Ratings” are intended to
accommodate short duration
undershoot/overshoot conditions and does not
imply or guarantee functional device operation at
these levels for any extended period of time.
Storage Temperature. . . . . . . . . . -65C to +150C
Absolute Maximum Vcc . . . . . . . . . . . . . . . . .3.96V
All Output Voltages with Respect to Ground
. . . . . . . . -0.6V to 4.2V (Max VCC of 3.6V + 0.6V)
All Input Voltages with Respect to Ground
(excluding VCC pin, including NC pins)
. . . . . . . . -0.6V to 4.2V (Max VCC of 3.6V + 0.6V)
AT45DB041E
Operating Temperature (Case) Industrial -40C to 85C
VCC Power Supply 1.65V to 3.6V
47
AT45DB041E
8783L–DFLASH–7/2017
18.3 DC Characteristics
Notes: 1. Typical values measured at 1.8V at 25C for the 1.65V to 3.6V range.
2. Typical values measured at 3.0V at 25C for the 2.3V to 3.6V range.
Symbol Parameter Condition Min Typ Max Min Typ Max Units
IUDPD
Ultra-Deep Power-Down
Current
CS= VCC. All other inputs
at 0V or VCC
0.4 10.4 1µA
IDPD Deep Power-Down Current CS= VCC. All other inputs
at 0V or VCC
4.5 12 512 µA
ISB Standby Current CS= VCC. All other inputs
at 0V or VCC
25 40 25 40 µA
ICC1(1) Active Current, Low Power
Read (01h) Operation
f = 1MHz; IOUT = 0mA 6 9 6 9 mA
f = 15MHz; IOUT = 0mA 710 710 mA
ICC2(1)(2) Active Current,
Read Operation
f = 50MHz; IOUT = 0mA 10 12 10 12 mA
f = 85MHz; IOUT = 0mA 12 15 12 15 mA
ICC3
Active Current,
Program Operation CS=VCC 14 16 14 16 mA
ICC4
Active Current,
Erase Operation CS=VCC 812 812 mA
ILI Input Load Current All inputs at CMOS levels 1 1 µA
ILO Output Leakage Current All inputs at CMOS levels 1 1 µA
VIL Input Low Voltage VCC x
0.3
VCC x
0.3 V
VIH Input High Voltage VCC x
0.7
VCC +
0.6
VCC x
0.7
VCC +
0.6 V
VOL Output Low Voltage IOL = 100µA 0.4 0.4 V
VOH Output High Voltage IOH = -100µA VCC -
0.2V
VCC -
0.2V V
1.65V to 3.6V
1
2.3V to 3.6V
48
AT45DB041E
8783L–DFLASH–7/2017
18.4 AC Characteristics
Symbol Parameter
1.65 to 3.6V 2.3V to 3.6V
Min Max Min Max Units
fSCK SCK Frequency 70 85 MHz
fCAR1 SCK Frequency for Continuous Read (0x0B) 70 85 MHz
fCAR2
SCK Frequency for Continuous Read (0x03)
(Low Frequency) 40 50 MHz
fCAR3
SCK Frequency for Continuous Read
(Low Power Mode – 01h Opcode) 15 15 MHz
fCAR4 SCK Frequency for Continuous Read (0x1B) 85 104
tWH SCK High Time 4 4 ns
tWL SCK Low Time 4 4 ns
tSCKR(1) SCK Rise Time, Peak-to-peak 0.1 0.1 V/ns
tSCKF(1) SCK Fall Time, Peak-to-peak 0.1 0.1 V/ns
tCS Minimum CS High Time 20 20 ns
tCSS CS Setup Time 6 5 ns
tCSH CS Hold Time 5 5 ns
tSU Data In Setup Time 2 2 ns
tHData In Hold Time 1 1 ns
tHO Output Hold Time 0 0 ns
tDIS(1) Output Disable Time 8 6 ns
tVOutput Valid 7 6 ns
tWPE WP Low to Protection Enabled 1 1 µs
tWPD WP High to Protection Disabled 1 1 µs
tLOCK Freeze Sector Lockdown Time (from CS High) 200 200 µs
tEUDPD(1) CS High to Ultra-Deep Power-Down 3 3 µs
tCSLU Minimum CS Low Time to Exit Ultra-Deep Power-Down 20 20 ns
tXUDPD Exit Ultra-Deep Power-Down Time 280 140 µs
tEDPD(1) CS High to Deep Power-Down 2 2 µs
tRDPD Resume from Deep Power-Down Time 35 35 µs
tXFR Page to Buffer Transfer Time 100 100 µs
tCOMP Page to Buffer Compare Time 100 100 µs
tRST RESET Pulse Width 10 10 µs
tREC RESET Recovery Time 1 1 µs
tSWRST Software Reset Time 35 35 µs
49
AT45DB041E
8783L–DFLASH–7/2017
Note: 1. Values are based on device characterization, not 100% tested in production.
18.5 Program and Erase Characteristics
19. Input Test Waveforms and Measurement Levels
20. Output Test Load
Symbol Parameter Typ Max Typ Max Units
tEP Page Erase and Programming Time (256/264 bytes) 10 25 15 25 ms
tPPage Programming Time 1.5 31.5 3ms
tBP Byte Programming Time 8 8 µs
tPE Page Erase Time 12 25 12 25 ms
tBE Block Erase Time 30 35 30 35 ms
tSE Sector Erase Time .7 1.1 .7 1.1 s
tCE Chip Erase Time 617 517 s
tSUSP Suspend Time
Program 815 815
µs
Erase 20 30 20 30
tRES Resume Time
Program 815 815
µs
Erase 20 30 20 30
tOTPP OTP Security Register Program Time 200 500 200 500 µs
AC
Driving
Levels
AC
Measurement
Level
0.1VCC
VCC/2
0.9VCC
tR, tF < 2ns (10% to 90%)
Device
Under
Test
30pF
1.65V to 3.6V 2.3V to 3.6V
50
AT45DB041E
8783L–DFLASH–7/2017
21. Utilizing the RapidS Function
To take advantage of the RapidS function's ability to operate at higher clock frequencies, a full clock cycle must be used
to transmit data back and forth across the serial bus. The DataFlash is designed to always clock its data out on the falling
edge of the SCK signal and clock data in on the rising edge of SCK.
For full clock cycle operation to be achieved, when the DataFlash is clocking data out on the falling edge of SCK, the host
controller should wait until the next falling edge of SCK to latch the data in. Similarly, the host controller should clock its
data out on the rising edge of SCK in order to give the DataFlash a full clock cycle to latch the incoming data in on the
next rising edge of SCK.
Figure 21-1. RapidS Mode
SCK
MOSI
MISO
1234567812345678
MOSI = Master Out, Slave In
MISO = Master In, Slave Out
The Master is the host controller and the Slave is the DataFlash.
The Master always clocks data out on the rising edge of SCK and always clocks data in on the falling edge of SCK.
The Slave always clocks data out on the falling edge of SCK and always clocks data in on the rising edge of SCK.
A. Master clocks out first bit of BYTE-MOSI on the rising edge of SCK
B. Slave clocks in first bit of BYTE-MOSI on the next rising edge of SCK
C. Master clocks out second bit of BYTE-MOSI on the same rising edge of SCK
D. Last bit of BYTE-MOSI is clocked out from the Master
E. Last bit of BYTE-MOSI is clocked into the slave
F. Slave clocks out first bit of BYTE-SO
G. Master clocks in first bit of BYTE-SO
H. Slave clocks out second bit of BYTE-SO
I. Master clocks in last bit of BYTE-SO
ABC D E
FG
1
H
BYTE-MOSI
MSB LSB
BYTE-SO
MSB LSB
Slave CS
I
51
AT45DB041E
8783L–DFLASH–7/2017
Figure 21-2. Command Sequence for Read/Write Operations for Page Size 256 bytes
(Except Status Register Read, Manufacturer and Device ID Read)
Figure 21-3. Command Sequence for Read/Write Operations for Page Size 264 bytes
(Except Status Register Read, Manufacturer and Device ID Read)
SI (INPUT) CMD 8-bits 8-bits 8-bits
Page Address
(A18 - A8)
X X X X X X X X X X X X X X X X LSB
X X X X X X X X
Byte/Buffer Address
(A7 - A0/BFA7 - BFA0)
MSB
5 Dummy Bits
Page Address
(PA10 - PA0)
Byte/Buffer Address
(BA8 - BA0/BFA8 - BFA0)
SI (INPUT) CMD 8-bits 8-bits 8-bits
X X X X X X X X X X X X LSB
X X X X X X X X
MSB
4
Dummy Bits
X X X X
52
AT45DB041E
8783L–DFLASH–7/2017
22. AC Waveforms
Four different timing waveforms are shown in Figure 22-1 through Figure 22-4. Waveform 1 shows the SCK signal being
low when CS makes a high-to-low transition and Waveform 2 shows the SCK signal being high when CS makes a
high-to-low transition. In both cases, output SO becomes valid while the SCK signal is still low (SCK low time is specified
as tWL). Timing Waveforms 1 and 2 conform to RapidS serial interface but for frequencies up to 85MHz. Waveforms 1
and 2 are compatible with SPI Mode 0 and SPI Mode 3, respectively.
Waveform 3 and 4 illustrate general timing diagram for RapidS serial interface. These are similar to Waveform 1 and 2,
except that output SO is not restricted to become valid during the tWL period. These timing waveforms are valid over the
full frequency range (maximum frequency = 85MHz) of the RapidS serial case.
Figure 22-1. Waveform 1 = SPI Mode 0 Compatible
Figure 22-2. Waveform 2 = SPI Mode 3 Compatible
CS
SCK
SI
SO
t
CSS
Valid In
t
H
t
SU
t
WH
t
WL
t
CSH
t
CS
t
V
High-impedance Valid Out
t
HO
t
DIS
High-impedance
CS
SCK
SO
tCSS
Valid In
tH
tSU
tWL tWH tCSH
tCS
tV
High Z Valid Out
tHO tDIS
High-impedance
SI
53
AT45DB041E
8783L–DFLASH–7/2017
Figure 22-3. Waveform 3 = RapidS Mode 0
Figure 22-4. Waveform 4 = RapidS Mode 3
CS
SCK
SI
SO
t
CSS
Valid In
t
H
t
SU
t
WH
t
WL
t
CSH
t
CS
t
V
High-impedance Valid Out
t
HO
t
DIS
High-impedance
CS
SCK
SO
t
CSS
Valid In
t
H
tSU
tWL tWH tCSH
tCS
tV
High Z Valid Out
t
HO tDIS
High-impedance
SI
54
AT45DB041E
8783L–DFLASH–7/2017
23. Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
Figure 23-1. Block Diagram
Figure 23-2. Buffer Write
Figure 23-3. Buffer to Main Memory Page Program
Flash Memory Array
I/O Interface
SCK
CS
RESET
VCC
GND
WP
SOSI
Page (256/264 bytes)
Buffer 1 (256/264 bytes) Buffer 2 (256/264 bytes)
CS
SI (Input) CMD X X BFA7-0 n n + 1 Last Byte
Completes Writing into Selected Buffer
Binary Page Size
16 Dummy Bits + BFA7-BFA0
n = 1st byte read
n+1 = 2nd byte read
Each transition represents eight bits
CS
SI (Input) CMD A15-A8 XXXX XXXXXXXXX,A18-A16
Starts Self-timed Erase/Program Operation
Binary Page Size
A18-A8 + 8 Dummy Bits
Each transition represents eight bits
55
AT45DB041E
8783L–DFLASH–7/2017
24. Read Operations
The following block diagram and waveforms illustrate the various read sequences available.
Figure 24-1. Block Diagram
Figure 24-2. Main Memory Page Read
Flash Memory Array
Page (256/264 bytes)
Buffer 2 (256/264 bytes)Buffer 1 (256/264 bytes)
I/O Interface
Main Memory
Page To
Buffer 1
Main Memory
Page To
Buffer 2
Main Memory
Page Read
Buffer 1
Read
Buffer 2
Read
SO
CS
SI (Input)
SO (Output) n
CMD XXXX,PA10-7 PA6-0, BA8 BA7-0 X X
Address for Binary Page Size
XXXXX,A18-A16 A15-A8 A7-A0
n n + 1
4 Dummy Bytes
56
AT45DB041E
8783L–DFLASH–7/2017
Figure 24-3. Main Memory Page to Buffer Transfer
Data From the selected Flash Page is read into either SRAM Buffer
Figure 24-4. Buffer Read
CS
SI (Input)
CMD XXXX, PA10-7 PA6-0, XX XXXX XXXX
Starts Reading Page Data into Buffer
Binary Page Size
XXXXX, A18-A16 + A15- A8 + 8 Dummy Bits
SO (Output)
CS
SI (Input)
SO (Output)
n
CMD XXXX XXXX XXXX XXXX BFA7-0 X
Address for Binary Page Size
16 Dummy Bits + BFA7-BFA0
n n + 1
No Dummy Byte (opcodes D1H and D3H)
1 Dummy Byte (opcodes D4H and D6H)
Each transition represents eight bits
57
AT45DB041E
8783L–DFLASH–7/2017
25. Detailed Bit-level Read Waveforms: RapidS Mode 0/Mode 3
Figure 25-1. Continuous Array Read (Legacy Opcode E8h)
Figure 25-2. Continuous Array Read (Opcode 0Bh)
Figure 25-3. Continuous Array Read (Opcode 01h or 03h)
SCK
CS
SI
SO
MSB MSB
2 3 1 0
1 1 1 0 1 0 0 0
6 7 5 4 10 11 9 8 12 63 66 67 65 64 62 33 34 31 32 29 30 68 71 72 70 69
Opcode
A A A A A A A A A
MSB
X X X X X X
MSB MSB
D D D D D D D D D D
Address Bits 32 Dummy Bits
Data Byte 1
High-impedance
Bit 2048/2112
of Page n
Bit 0 of
Page n+1
SCK
CS
SI
SO
MSB MSB
2 3 1 0
0 0 0 0 1 0 1 1
6 7 5 4 10 11 9 8 12 39 42 43 41 40 38 33 34 31 32 29 30 44 47 48 46 45
Opcode
A A A A A A A A A
MSB
X X X X X X
MSB MSB
D D D D D D D D D D
Address Bits A18 - A0 Dummy Bits
Data Byte 1
High-impedance
36 37 35
X X
SCK
CS
SI
SO
MSB MSB
2 3 1 0
0 0 0 0 0 0 1 1
6 7 5 4 10 11 9 8 12 37 38 33 36 35 34 31 32 29 30 39 40
Opcode
A A A A A A A A A
MSB MSB
D D D D D D D D D D
Address Bits A18-A0
Data Byte 1
High-impedance
58
AT45DB041E
8783L–DFLASH–7/2017
Figure 25-4. Main Memory Page Read (Opcode D2h)
Figure 25-5. Buffer Read (Opcode D4h or D6h)
Figure 25-6. Buffer Read – Low Frequency (Opcode D1h or D3h)
SCK
CS
SI
SO
MSB MSB
2 3 1 0
1 1 0 1 0 0 1 0
6 7 5 4 10 11 9 8 12 63 66 67 65 64 62 33 34 31 32 29 30 68 71 72 70 69
Opcode
A A A A A A A A A
MSB
X X X X X X
MSB MSB
D D D D D D D D D D
Address Bits 32 Dummy Bits
Data Byte 1
High-impedance
SCK
CS
SI
SO
MSB MSB
2 3 1 0
1 1 0 1 0 1 0 0
6 7 5 4 10 11 9 8 12 39 42 43 41 40 37 38 33 36 35 34 31 32 29 30 44 47 48 46 45
Opcode
X X X X A A A X X
MSB
X X X X X X X X
MSB MSB
D D D D D D D D D D
Address Bits
Binary Page Size = 16 Dummy Bits + BFA7-BFA0
Standard DataFlash Page Size =
15 Dummy Bits + BFA8-BFA0 Dummy Bits
Data Byte 1
High-impedance
SCK
CS
SI
SO
MSB MSB
2 3 1 0
1 1 0 1 0 0 0 1
6 7 5 4 10 11 9 8 12 37 38 33 36 35 34 31 32 29 30 39 40
Opcode
X X X X A A A X X
MSB MSB
D D D D D D D D D D
Data Byte 1
High-impedance
Address Bits
Binary Page Size = 16 Dummy Bits + BFA7-BFA0
Standard DataFlashPage Size =
15 Dummy Bits + BFA8-BFA0
59
AT45DB041E
8783L–DFLASH–7/2017
Figure 25-7. Read Sector Protection Register (Opcode 32h)
Figure 25-8. Read Sector Lockdown Register (Opcode 35h)
Figure 25-9. Read Security Register (Opcode 77h)
SCK
CS
SI
SO
MSB MSB
2 3 1 0
0 0 1 1 0 0 1 0
6 7 5 4 10 11 9 8 12 37 38 33 36 35 34 31 32 29 30 39 40
Opcode
X X X X X X X X X
MSB MSB
D D D D D D D D D
Dummy Bits
Data Byte 1
High-impedance
SCK
CS
SI
SO
MSB MSB
2 3 1 0
0 0 1 1 0 1 0 1
6 7 5 4 10 11 9 8 12 37 38 33 36 35 34 31 32 29 30 39 40
Opcode
X X X X X X X X X
MSB MSB
D D D D D D D D D
Dummy Bits
Data Byte 1
High-impedance
SCK
CS
SI
SO
MSB MSB
2 3 1 0
0 1 1 1 0 1 1 1
6 7 5 4 10 11 9 8 12 37 38 33 36 35 34 31 32 29 30 39 40
Opcode
X X X X X X X X X
MSB MSB
D D D D D D D D D
Dummy Bits
Data Byte 1
High-impedance
60
AT45DB041E
8783L–DFLASH–7/2017
Figure 25-10. Status Register Read (Opcode D7h)
Figure 25-11. Manufacturer and Device Read (Opcode 9Fh)
Figure 25-12.Reset Timing
Note: 1. The CS signal should be in the high state before the RESET signal is deasserted.
SCK
CS
SI
SO
MSB
2 3 1 0
1 1 0 1 0 1 1 1
6 7 5 4 10 11 9 8 12 21 22 17 20 19 18 15 16 13 14 23 24
Opcode
MSB MSB
D D D D D D D D D D
MSB
D D D D D D D D
Status Register Data Status Register Data
High-impedance
SCK
CS
SI
SO
60
9Fh
87 47
Opcode
1Fh 00h 01h 00h
Manufacturer ID Device ID
Byte 1
Device ID
Byte 2
EDI
String Length
EDI
Data Byte 1
High-impedance
14 1615 22 2423 38 403930 3231
Note: Each transition shown for SI and SO represents one byte (8 bits)
24h
CS
SCK
RESET
SO (Output) High Impedance High Impedance
SI (Input)
tRST
tREC tCSS
61
AT45DB041E
8783L–DFLASH–7/2017
26. Auto Page Rewrite Flowchart
Figure 26-1. Algorithm for Programming or Re-programming of the Entire Array Sequentially
Notes: 1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the
array page-by-page.
2. A page can be written using either a Main Memory Page Program operation or a buffer write operation
followed by a buffer to Main Memory Page Program operation.
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially
for each page within the entire array.
START
Main Memory Page Program
through Buffer
(82h, 85h)
END
Provide Address
and Data
Buffer Write
(84h, 87h)
Buffer To Main
Memory Page Program
(83h, 86h)
62
AT45DB041E
8783L–DFLASH–7/2017
Figure 26-2. Algorithm for Programming or Re-programming of the Entire Array Randomly
Notes: 1. To preserve data integrity, each page of an DataFlash sector must be updated/rewritten at least once within
every 50,000 cumulative page erase and program operations.
2. A page address pointer must be maintained to indicate which page is to be rewritten. The Auto Page
Rewrite command must use the address specified by the page address pointer.
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to
wait until 50,000 cumulative page erase and program operations have accumulated before rewriting all
pages of the sector.
START
Main Memory Page
to Buffer Transfer
(53h, 55h)
Increment Page
Address Pointer(2)
Auto Page Rewrite(2)
(58h, 59h)
END
Provide Address of
Page to Modify
If planning to modify multiple
bytes currently stored within
a page of the Flash array
Main Memory Page Program
through Buffer
(82h, 85h)
Buffer Write
(84h, 87h)
Buffer to Main
Memory Page Program
(83h, 86h)
63
AT45DB041E
8783L–DFLASH–7/2017
27. Ordering Information
27.1 Ordering Detail
27.2 Ordering Codes (Standard DataFlash Page Size)
Notes: 1. The shipping carrier suffix is not marked on the device.
2. Not recommended for new design. Use the 8S1 package option.
3. Contact info@adestotech.com for mechanical drawing or Die Sales information.
4. Contact info@adestotech.com for manufacturing flow and availability.
Device Grade
H = Green, NiPdAu lead finish,
Industrial temperature range
(–40°C to +85°C)
U = Green, Matte Sn or Sn alloy,
Industrial temperature range
(–40°C to +85°C)
Designator
Product Family
Device Density
Device Revision
Shipping Carrier Option
Package Option
04 = 4-Mbit
Interface
1 = Serial
45DB = DataFlash
B = Bulk (tubes)
T = Tape and reel
Y = Trays
Operating Voltage
N = 1.65V minimum (1.65V to 3.6V)
SS = 8-lead, 0.150” narrow SOIC
S = 8-lead, 0.208” wide SOIC
M = 8-pad, 5 x 6 x 0.6mm UDFN
U = 8-ball WLCSP
DWF = Die in Wafer Form
AT45DB041E-SSHN2B-B
Page Size Option
“ ” = Standard (264 bytes/page)
2B = Binary (256 bytes/page)
Ordering Code Package Lead Finish Operating Voltage fSCK Device Grade
AT45DB041E-SSHN-B (1)
8S1
NiPdAu 1.65V to 3.6V 85MHz Industrial
(-40C to 85C)
AT45DB041E-SSHN-T(1)
AT45DB041E-SHN-B(1)(2)
8S2
AT45DB041E-SHN-T(1)(2)
AT45DB041E-MHN-Y(1)
8MA1
AT45DB041E-MHN-T(1)
AT45DB041E-UUN-T(1)(4) CS4-8A
AT45DB041E-DWF(3) DWF
64
AT45DB041E
8783L–DFLASH–7/2017
27.3 Ordering Codes (Binary Page Size)
Notes: 1. The shipping carrier suffix is not marked on the device.
2. Not recommended for new design. Use the 8S1 package option.
3. Parts ordered with suffix code ‘2B’ are shipped in tape and reel (T&R) with the page size set to
256 bytes. This option is only available for shipping in T&R (-T).
4. Contact info@adestotech.com for manufacturing flow and availability.
27.4 Ordering Codes (Reserved)
Notes: 1. The shipping carrier suffix is not marked on the device.
2. Parts ordered with suffix code ‘HA’ are shipped in tape and reel (T&R) only with the page size set to 264 bytes.
3. Parts ordered with suffix code ‘HC’ are shipped in tape and reel (T&R) only with the page size set to 256 bytes.
4. Please contact Adesto for a description of these ‘Reserved’ codes.
Ordering Code Package Lead Finish Operating Voltage fSCK Device Grade
AT45DB041E-SSHN2B-T(1)(3) 8S1
NiPdAu 1.65V to 3.6V 85MHz Industrial
(-40C to 85C)
AT45DB041E-SHN2B-T(1)(2)(3) 8S2
AT45DB041E-MHN2B-T (1)(3) 8MA1
AT45DB041E-UUN2B-T(1)(3)(4) CS4-8A
Package Type
8S1 8-lead 0.150" wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8S2 8-lead 0.208" wide, Plastic Gull Wing Small Outline (EIAJ SOIC)
8MA1 8-pad (5 x 6 x 0.6mm body), Thermally Enhanced Plastic Ultra Thin Dual Flat No-lead (UDFN)
CS4-8A 8-ball Wafer Level Chip Scale Package
DWF Die in Wafer Form
Ordering Code Package Lead Finish Operating Voltage fSCK Device Grade
AT45DB041E-SSHNHA-T(1)(2) 8S1
NiPdAu 1.65V to 3.6V 85MHz Industrial
(-40C to 85C)
AT45DB041E-SHNHA-T(1)(2) 8S2
AT45DB041E-SSHNHC-T(1)(3) 8S1
AT45DB041E-SHNHC-T(1)(3) 8S2
Package Type
8S1 8-lead 0.150" wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8S2 8-lead 0.208" wide, Plastic Gull Wing Small Outline (EIAJ SOIC)
65
AT45DB041E
8783L–DFLASH–7/2017
28. Packaging Information
28.1 8S1 – 8-lead JEDEC SOIC
DRAWING NO. REV. TITLE GPC
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A1 0.10 – 0.25
A 1.35 – 1.75
b 0.31 – 0.51
C 0.17 – 0.25
D 4.80 – 5.05
E1 3.81 – 3.99
E 5.79 – 6.20
e 1.27 BSC
L 0.40 – 1.27
ØØ 0° – 8°
Ø
E
1
N
TOP VIEW
C
E1
END VIEW
A
b
L
A1
e
D
SIDE VIEW
Package Drawing Contact:
contact@adestotech.com
8S1 G
6/22/11
Notes: This drawing is for general information only.
Refer to JEDEC Drawing MS-012, Variation AA
for proper dimensions, tolerances, datums, etc.
8S1, 8-lead (0.150” Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC) SWB
66
AT45DB041E
8783L–DFLASH–7/2017
28.2 8S2 – 8-lead EIAJ SOIC
TITLE DRAWING NO. GPC REV.
Package Drawing Contact:
contact@adestotech.com
8S2 STN F
8S2, 8-lead, 0.208” Body, Plastic Small
Outline Package (EIAJ)
4/15/08
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs aren't included.
3. Determines the true geometric position.
4. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
A 1.70 2.16
A1 0.05 0.25
b 0.35 0.48 4
C 0.15 0.35 4
D 5.13 5.35
E1 5.18 5.40 2
E 7.70 8.26
L 0.51 0.85
q 0° 8°
e 1.27 BSC 3
qq
1 1
N N
E E
TOP VIEW TOP VIEW
C C
E1 E1
END VIEW END VIEW
A A
b b
L L
A1 A1
e e
D D
SIDE VIEW SIDE VIEW
67
AT45DB041E
8783L–DFLASH–7/2017
28.3 8MA1 – 8-pad UDFN
TITLE DRAWING NO.GPC REV.
Package Drawing Contact:
contact@adestotech.com 8MA1YFG D
8MA1, 8-pad (5 x 6 x 0.6 mm Body), Thermally
Enhanced Plastic Ultra Thin Dual Flat No Lead
Package (UDFN)
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A 0.45 0.55 0.60
A1 0.00 0.02 0.05
b 0.35 0.40 0.48
C 0.152 REF
D 4.90 5.00 5.10
D2 3.80 4.00 4.20
E 5.90 6.00 6.10
E2 3.20 3.40 3.60
e 1.27
L 0.50 0.60 0.75
y 0.00 – 0.08
K 0.20 – –
4/15/08
Pin 1 ID
TOP VIEW
E
D
A1
A
SIDE VIEW
y
C
BOTTOM VIEW
E2
D2
L
b
e
1
2
3
4
8
7
6
5
Pin #1 Notch
(0.20 R)
0.45
K
Pin #1
Chamfer
(c 0.35)
Option A
(Option B)
68
AT45DB041E
8783L–DFLASH–7/2017
28.4 CS4-8A – 8-ball WLCSP
TITLE DRAWING NO.GPC REV.
Package Drawing Contact:
contact@adestotech.com
®
CS4-8A
YFG A
CS4-8A, 8-ball, Wafer Level Chip Scale
Package (WLCSP)
COMMON DIMENSIONS
(Unit of Measure = mm)
10/15/15
Pin 1 ID
TOP VIEW
1.453±0.05
SIDE VIEW
0.45
0.173±0.017
0.022±0.005
0.3±0.015
0.52 (MAX)
0.05 AA
0.527
+0.03
-0
(0.25)
0.5±0.015
(1.5)
0.5±0.015
(0.25) 0.477
+0.03
-0
Ø0.303±0.03 (8X)
BOTTOM VIEW
A
B
C
D
A
B
C
D
12
1
2
2.553±0.05
Pin Assignment Matrix
A B C D
1
2VCC GND SO
CS SCK SI
WP
RESET
69
AT45DB041E
8783L–DFLASH–7/2017
29. Revision History
30. Errata
30.1 The specification for Exit Ultra Deep Power Down has been updated. The new specification for the 1.65-
3.6V range is 280 µs. The new specification for the 2.3-3.6V range is 140 µs.
Doc. Rev. Date Comments
8783A 09/2012 Initial document release.
8783B 11/2012 Added Legacy Commands table.
Updated to Adesto template.
8783C 6/2013
Updated power and electrical specifications. Removed CCUN-T package (not available with this
device) and other UBGA references. “Buffer 1 (or 2) Read” moved from Group C to Group A in
Operation Mode Summary.
8783D 7/2013 Updated electrical specification for fCAR1 for 1.65V to 3.6V to 70 MHz - (SCK Frequency for
Continuous Read (0x0B)). Removed Preliminary Status.
8783E 7/2013 Updated Auto Page Rewrite cycle to 50,000 cumulative page erase/program operations.
Added reserved part order codes.Updated DC conditions for VOL, ICC3 and ICC4.
8783F 10/2013
Updated spec in Continuous Array Read (1Bh Opcode) to fCAR4. Corrected Low Power Read
Option (up to 15MHz). Corrected Ultra-Deep Power-Down current (400nA typical). Updated spec
for Input High Voltage (Max) to VCC + 0.6V.
8783G 1/2014 Removed mention of 9-ball Ultra-thin UBGA (6 x 6 x 0.6mm). Not available in this package.
8783H 7/2015
Expanded explanation of Power up/Power down (Section 16). Added Die in Wafer Form package
option. Updated Table 6-4 (Main Memory to Buffer Compare). Corrected references in Section
9.3 (Auto Page Rewrite). Corrected Table 15-7. Added information on Power Up (Section 16.1).
Updated Tables 12-1 and 12-3. Updated condition description for IUDPD, IDPD, and ISB. Updated
Deep Power Down and Ultra Deep Power Down timing diagrams.
8783I 3/2016
Added WLCSP package option. Updated Condition description for IDPD, ISB, Icc1 and Icc2.
Added footnote to Icc1 , tDIS, tEUDPD, tEPD. Updated footnote 2 on Table 18.3. Removed footnotes
from Table 18.5.
8783J 1/2017 Updated tXUDPD. Added patent information.
8783K 2/2017 Added Errata section.
8783L 7/2017 Added clarification of Absolute Maximum Ratings. Corrected Active Read and Standby specs on
Features page. Added footnote and updated WLCSP references.
Corporate Office
California | USA
Adesto Headquarters
3600 Peterson Way
Santa Clara, CA 95054
Phone: (+1) 408.400.0578
Email: contact@adestotech.com
© 2017 Adesto Technologies. All rights reserved. / Rev.: 8783L–DFLASH–7/2017
Disclaimer: Adesto Technologies Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Adesto's Terms
and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications
detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Adesto are granted by the
Company in connection with the sale of Adesto products, expressly or by implication. Adesto's products are not authorized for use as critical components in life support devices or systems.
Adesto®, the Adesto logo, CBRAM®, and DataFlash® are registered trademarks or trademarks of Adesto Technologies. All other marks are the property of their respective
owners. Adesto products in this datasheet are covered by certain Adesto patents registered in the United States and potentially other countries. Please refer to
http://www.adestotech.com/patents for details.
