Preliminary Data Sheet PS9402 R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 2.5 A OUTPUT CURRENT, HIGH CMR, IGBT, POWER MOS FET GATE DRIVE, 16-PIN SSOP PHOTOCOUPLER DESCRIPTION The PS9402 is an optically coupled isolator containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip. The PS9402 is designed specifically for high common mode transient immunity (CMR), high output current and high switching speed. The PS9402 includes desaturation detection and active miller clamping functions. The PS9402 is suitable for driving IGBTs and Power MOS FETs. The PS9402 is in a 16-pin plastic SSOP (Shrink Small Outline Package). And the PS9402 is able to high-density (surface) mounting. FEATURES <R> * * * * * * * * * * Long creepage distance (8 mm MIN.) Large peak output current (2.5 A MAX., 2.0 A MIN.) High speed switching (tPLH, tPHL = 200 ns MAX.) UVLO (Under Voltage Lock Out) protection with hysteresis Desaturation detection Miller clamping High common mode transient immunity (|CMH|, |CML| = 25 kV/s MIN.) Embossed tape product: PS9402-E3: 850 pcs/reel Pb-Free product Safety standards * UL approved: No. E72422 * CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) * DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option) PIN CONNECTION (Top View) 1 VS VE 16 2 VCC1 VLED 15 3 Fault Desat 14 4 VS 5 Cathode VCC2 13 VEE 12 6 Anode VO 11 7 Anode Vclamp 10 8 Cathode VEE 9 APPLICATIONS * IGBT, Power MOS FET Gate Driver * Industrial inverter * Uninterruptible Power Supply (UPS) The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 1 of 22 PS9402 Chapter Title PACKAGE DIMENSIONS (UNIT: mm) 10.310.5 1.27 0.460.1 0.25 M 10.360.4 0.20.15 3.50.2 7.49+0.5 -0.1 0.64 MIN. 0.710.3 PHOTOCOUPLER CONSTRUCTION Parameter Air Distance Outer Creepage Distance Isolation Distance R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Unit (MIN.) 8 mm 8 mm 0.4 mm Page 2 of 22 PS9402 Chapter Title BLOCK DIAGRAM (UNIT: mm) VS VE SHIELD VCC1 VLED Fault Desat VCC2 VS UVLO VEE Cathode Anode VO DESAT Anode Vclamp CLAMP Cathode VEE SHIELD IF UVLO (VCC2 - VEE) OFF ON ON ON OFF Not Active ( > VUVLO+) Not Active ( > VUVLO+) Not Active ( > VUVLO+) Active ( < VUVLO-) Active ( < VUVLO-) <R> <R> <R> <R> <R> <R> R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 DESAT (Pin 14: DESAT pin input) Not active Low ( < VDESATth) High ( > VDESATth) Not Active Not Active FAULT (Pin 3: FAULT pin output) High High Low (FAULT) High High VO Low High Low Low Low Page 3 of 22 PS9402 <R> Chapter Title MARKING EXAMPLE No. 1 pin Mark R 9402 NT231 Company Initial Type Number Assembly Lot N T 2 31 Week Assembled Year Assembled (Last 1 Digit) In-house Code (T: Pb-Free) Rank Code ORDERING INFORMATION Part Number Order Number PS9402 PS9402-E3 PS9402-AX PS9402-E3-AX PS9402-V PS9402-V-E3 PS9402-V-AX PS9402-V-E3-AX <R> <R> Note: Solder Plating Specification Pb-Free (Ni/Pd/Au) Packing Style 10 pcs (Tape 10 pcs cut) Embossed Tape 850 pcs/reel 10 pcs (Tape 10 pcs cut) Embossed Tape 850 pcs/reel Safety Standard Approval Standard products (UL and CSA Approved) DIN EN60747-5-2 (VDE0884 Part2) Approved (Option) Application *1 Part Number PS9402 *1. For the application of the Safety Standard, following part number should be used. R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 4 of 22 PS9402 Chapter Title ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) <R> <R> <R> Parameter Forward Current *1 Symbol IF Peak Transient Forward Current (Pulse Width < 1 s) Reverse Voltage Input Supply Voltage Input IC Power Dissipation *2 High Level Peak Output Current *3 Low Level Peak Output Current *3 FAULT Output Current FAULT Pin Voltage Total Output Supply Voltage Negative Output Supply Voltage Output Voltage Peak Clamping Sinking Current Miller Clamping Pin Voltage DESAT Voltage Output IC Power Dissipation *4 Isolation Voltage *5 Operating Ambient Temperature Storage Temperature IF (TRAN) Notes: *1. *2. *3. *4. *5. VR VCC1 PI IOH (PEAK) IOL (PEAK) IFAULT VFAULT (VCC2 - VEE) (VE - VEE) VO IClamp VClamp VDESAT PO BV TA Tstg Ratings 25 1.0 Unit mA A 5 0 to 5.5 80 2.5 2.5 8 0 to VCC1 0 to 33 0 to 15 0 to VCC2 1.7 0 to VCC2 VE to VE + 10 300 5 000 -40 to +110 -55 to +125 V V mW A A mA V V V V A V V mW Vr.m.s. C C Reduced to 0.52 mA/C at TA = 85C or more. Reduced to 1.6 mW/C at TA = 75C or more. Maximum pulse width = 10 s, Maximum duty cycle = 0.2% Reduced to 5.5 mW/C at TA = 70C or more. AC voltage for 1 minute at TA = 25C, RH = 60% between input and output. Pins 1-8 shorted together, 9-16 shorted together. RECOMMENDED OPERATING CONDITIONS Parameter Total Output Supply Voltage Negative Output Supply Voltage Positive Output Supply Voltage Forward Current (ON) Forward Voltage (OFF) Operating Ambient Temperature R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Symbol (VCC2 - VEE) (VE - VEE) (VCC2 - VE) IF (ON) VF (OFF) TA MIN. 15 0 15 8 -2 -40 MAX. 30 15 30 - (VE - VEE) 12 0.8 110 Unit V V V mA V C Page 5 of 22 PS9402 <R> Chapter Title ELECTRICAL CHARACTERISTICS (DC) (at RECOMMENDED OPERATING CONDITIONS, VEE = VE = GND, unless otherwise specified) Parameter Symbol FAULT Logic Low Output Voltage VFAULTL FAULT Logic High Output Current High Level Output Current IFAULTH Low Level Output Current IOL Low Level Output Current During Fault Condition High Level Output Voltage IOLF Low Level Output Voltage Clamp Pin Threshold Voltage Clamp Low Level Sinking Current High Level Supply Current Low Level Supply Current Blanking Capacitor Charging Current Blanking Capacitor Discharging Current DESAT Threshold UVLO Threshold IOH VOH VOL VtClamp ICL ICC2H ICC2L Conditions IFAULT = 1.1 mA, VCC1 = 5.5 V VFAULT = 5.5 V, VCC1 = 5.5 V, TA = 25C VO = (VCC2 - 4 V) *2 VO = (VCC2 - 15 V) *3 VO = (VEE + 2.5 V) *2 VO = (VEE + 15 V) *3 VO - VEE = 14 V IO = 100 mA *4 IO = -650 A *4 IO = 100 mA VtClamp = VEE + 2.5 V MIN. -0.5 -2.0 0.5 2.0 90 140 -0.13 IDSCHG VDESAT = 7 V 10 30 6.0 11.0 9.8 0.4 6.9 12.6 11.3 1.3 1.5 Threshold Input Voltage (H L) Input Forward Voltage Input Reverse Current Input Capacitance VFHL IO = 0 mA, VO < 5 V 0.8 VF IR CIN IF = 10 mA, TA = 25C VR = 3 V, TA = 25C f = 1 MHz, VF = 0 V 1.2 A A ICHG IFLH 0.5 1.5 2 2 -0.24 Threshold Input Current (L H) Unit V A IO = 0 mA IO = 0 mA VDESAT = 2 V VDESATth VUVLO+ VUVLO- UVLOHYS MAX. -1.5 VCC2 - 3.0 VCC2 - 1.3 VCC2 - 2.5 VCC2 - 0.8 0.15 2.0 0.35 1.5 VCC2 - VE > VUVLO-, VO < 5 V VO > 5 V VO < 5 V (VUVLO+) - (VUVLO-) IO = 0 mA, VO > 5 V UVLO Hysteresis TYP. *1 0.1 230 mA V 0.5 V V A 3 3 -0.33 mA mA mA mA 7.5 13.5 12.3 5 V V V mA V 1.56 30 1.8 10 V A pF Notes: *1. Typical values at TA = 25C. *2. Maximum pulse width = 50 s, Maximum duty cycle = 0.5% *3. Maximum pulse width = 10 s, Maximum duty cycle = 0.2% *4. VOH is measured with the DC load current in this testing (Maximum pulse width = 1 ms, Maximum duty cycle = 20%). R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 6 of 22 PS9402 <R> Chapter Title SWITCHING CHARACTERISTICS (AC) (at RECOMMENDED OPERATING CONDITIONS, VEE = VE = GND, unless otherwise specified) Parameter Symbol Propagation Delay Time (L H) tPLH Propagation Delay Time (H L) tPHL Pulse Width Distortion (PWD) |tPHL-tPLH| tPHL-tPLH Propagation Delay Time (Difference Between Any Two Products) Rise Time tr Fall Time tf Conditions Rg = 10 , Cg = 10 nF, f = 10 kHz, Duty Cycle = 50% *2, MIN. 50 50 IF = 10 mA, VCC2 = 30 V -100 CMH TA = 25C, IF = 10 mA, VCC2 = 30 V, VCM = 1.5 kV, CDESAT = 100 pF, RF = 2.1 k, VCC1 = 5 V Common Mode Transient *4 Immunity at Low Level Output CML TA = 25C, VF = 0 V, VCC2 = 30 V, VCM = 1.5 kV, RF = 2.1 k, VCC1 = 5 V DESAT Sense to 90% VO Delay tDESAT CDESAT = 100 pF, RF = 2.1 k, DESAT Sense to 10% VO Delay tDESAT (10%) DESAT Sense to Low Level FAULT Signal Delay DESAT Sense to DESAT Low Propagation Delay DESAT Input Mute *5 MAX. 200 200 100 Unit ns ns ns 100 ns 50 50 Common Mode Transient *3 Immunity at High Level Output (90%) TYP. *1 90 110 20 Rg = 10 , Cg = 10 nF VCC2 = 30 V ns ns kV/s 25 1.5 tDESAT -25 kV/s 250 500 ns 2 3 s 400 800 ns (FAULT) 250 tDESAT ns (LOW) s 5 tDESAT (MUTE) RESET to High Level FAULT Signal Delay tRESET (FAULT) VCC1 = 5.5 V VCC1 = 3.3 V 0.3 0.5 1.2 1.5 3.0 4.0 s s Notes: *1. Typical values at TA = 25C. *2. This load condition is equivalent to the IGBT load at 1 200 V/150 A. *3. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will remain in the high state (i.e., VO > 15 V or FAULT > 2 V). A 100 pF and a 2.1 k pull-up resistor is needed in fault detection mode. *4. Common mode transient immunity in the low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will remain in a low state (i.e., VO < 1.0 V or FAULT < 0.8 V). *5. During muting DESAT, even if LED (IF) input occurs, IGBT operates turn-off and Vo state is kept to low. After unmuting this DESAT, when LED is turned on, Vo/FAULT becomes high state (with automatic reset). R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 7 of 22 PS9402 <R> Chapter Title TEST CIRCUIT 1 Fig. 1 VFAULTL Test Circuit 1 VS Fig. 2 IFAULTH Test Circuit 1 VS VE 16 VE 16 IF 2 2 VCC1 VCC1 VFAULTL 3 Fault VLED 15 VCC1 Desat 14 2 VCC1 VLED 15 3 Fault Desat 14 IFAULTH 4 VS 5 Cathode 6 Anode 7 Anode 8 Cathode 4 VS VEE 12 5 Cathode VO 11 Vclamp 10 VEE 9 VEE 12 6 Anode VO 11 7 Anode Vclamp 10 8 Cathode VEE 9 Fig. 4 IOL Test Circuit 1 VS 1 VS VE 16 VE 16 2 VCC1 VLED 15 2 VCC1 VLED 15 3 Fault Desat 14 3 Fault Desat 14 5 Cathode 6 Anode 7 Anode 8 Cathode VCC2 13 VEE 12 VO 11 Vclamp 10 VEE 4 VS VO 5 Cathode IOH 0.1 F VCC2 1 VS 6 Anode 7 Anode 8 Cathode 9 Fig. 5 VOH Test Circuit VCC2 13 VEE 12 Vclamp 10 Fig. 6 VOL Test Circuit 1 VS VE 16 VE 16 VLED 15 2 VCC1 VLED 15 Desat 14 3 Fault Desat 14 VCC2 13 VEE 12 6 Anode VO 11 7 Anode Vclamp 10 8 Cathode R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 VEE 9 VCC2 VO VEE 9 3 Fault 5 Cathode 0.1 F IOL VO 11 2 VCC1 4 VS IF VCC2 13 Fig. 3 IOH Test Circuit 4 VS IF VCC2 13 4 VS 0.1 F VOH 5 Cathode VCC2 IO VCC2 13 VEE 12 6 Anode VO 11 7 Anode Vclamp 10 8 Cathode VEE 9 0.1 F VOL VCC2 IO Page 8 of 22 PS9402 <R> Chapter Title TEST CIRCUIT 2 Fig. 8 ICC2L Test Circuit Fig. 7 ICC2H Test Circuit 1 VS VE 16 1 VS VE 16 2 VCC1 VLED 15 2 VCC1 VLED 15 3 Fault Desat 14 3 Fault Desat 14 ICC2H 4 VS 5 Cathode IF VEE 12 6 Anode VO 11 7 Anode Vclamp 10 8 Cathode ICC2L VCC2 13 4 VS 0.1 F 5 Cathode VCC2 VEE 9 1 VS VLED 15 3 Fault Desat 14 4 VS 5 Cathode IF VCC2 13 VEE 12 6 Anode VO 11 7 Anode Vclamp 10 8 Cathode Vclamp 10 1 VS 2V ICHG 0.1 F VLED 15 3 Fault Desat 14 5 Cathode VCC2 VEE 9 VE 16 VCC2 13 VEE 12 6 Anode VO 11 7 Anode Vclamp 10 8 Cathode 1 VS VE 16 VLED 15 2 VCC1 VLED 15 3 Fault Desat 14 6 Anode 7 Anode 8 Cathode R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 4 VS VCC2 13 VO 11 Vclamp 10 VEE 9 0.1 F VCC2 VE 16 Desat 14 VEE 12 IDSCHG Fig. 12 VDESAT Test Circuit 3 Fault 5 Cathode 7V VEE 9 2 VCC1 4 VS VCC2 VEE 9 2 VCC1 4 VS Fig. 11 ICL Test Circuit 1 VS VO 11 7 Anode 0.1 F Fig. 10 IDSCHG Test Circuit VE 16 2 VCC1 VEE 12 6 Anode 8 Cathode Fig. 9 ICHG Test Circuit VCC2 13 0.1 F ICL 2.5 V 5 Cathode VCC2 IF VCC2 13 VEE 12 6 Anode VO 11 7 Anode Vclamp 10 8 Cathode VDESAT 0.1 F VCC2 VEE 9 Page 9 of 22 PS9402 <R> Chapter Title TEST CIRCUIT 3 Fig. 14 IFLH Test Circuit Fig. 13 VUVLO Test Circuit 1 VS VE 16 1 VS VE 16 2 VCC1 VLED 15 2 VCC1 VLED 15 3 Fault Desat 14 3 Fault Desat 14 4 VS 5 Cathode VCC2 13 4 VS 0.1 F VEE 12 VCC2 13 0.1 F VEE 12 5 Cathode VCC2 6 Anode IF 7 Anode 8 Cathode VO 11 IF Vclamp 10 VEE 9 VLED 15 3 Fault Desat 14 5 Cathode IF 7 Anode Vclamp 10 VCC2 VEE 9 Fig. 17 tPLH/tPHL Test Wave Forms VE 16 2 VCC1 4 VS VO 11 8 Cathode Fig. 15 tPLH/tPHL Test Circuit 1 VS 6 Anode IF tr tf 90% 50% 10% VCC2 13 VEE 12 6 Anode VO 11 7 Anode Vclamp 10 VOUT 0.1 F 10 tPLH tPHL VCC2 10 nF 8 Cathode VEE 9 Fig. 17 tDESAT Test Circuit 1 VS VCC1 = 5 V 2.1 k VLED 15 3 Fault Desat 14 5 Cathode IF VDESAT - VE 16 2 VCC1 4 VS Fig. 18 tDESAT Test Wave Forms 100 pF VEE 12 VO 11 7 Anode Vclamp 10 VDESET 50% + tDESET (10%) VEE 9 90% VOUT 0.1 F 10% tDESET (90%) 10 10 nF R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 tDESET (LOW) VCC2 13 6 Anode 8 Cathode IF VCC2 FAULT tDESET (FAULT) 50% tDESET (MUTE) 50% tRESET (FAULT) Page 10 of 22 PS9402 <R> Chapter Title TEST CIRCUIT 4 Fig. 19 CMH Test Circuit (LED1 ON) 1 VS Fig. 20 CML Test Circuit (LED1 OFF) VE 16 1 VS VE 16 2 VCC1 VLED 15 2 VCC1 VLED 15 3 Fault Desat 14 3 Fault Desat 14 VCC2 13 4 VS 5 Cathode VEE 12 6 Anode VO 11 7 Anode Vclamp 10 VCC2 13 4 VS 0.1 F SCOPE 5 Cathode VCC2 10 VEE 12 6 Anode VO 11 7 Anode Vclamp 10 10 nF 1 VS Fig. 22 CML Test Circuit (LED2 OFF) VE 16 2 VCC1 VCC1 VLED 15 3 Fault 2.1 k 100 pF VCC1 Desat 14 VEE 12 VE 16 2 VCC1 VLED 15 3 Fault Desat 14 VCC2 13 4 VS VCC2 13 5 Cathode 1 VS SCOPE SCOPE 4 VS - + Fig. 21 CMH Test Circuit (LED2 ON) 2.1 k 10 VEE 9 8 Cathode - + 0.1 F 5 Cathode VEE 12 0.1 F VCC2 VCC2 0.1 F 6 Anode VO 11 7 Anode Vclamp 10 10 0.1 F 10 nF - VO 11 7 Anode Vclamp 10 90% VO (CMH: IF = 10 mA) VO (CML: IF = 0 mA) R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 + Fig. 24 CMH, CML Test Wave Forms (LED2 ON, OFF) 1 500 V 90% VCM 10% tr VEE 9 - VCM 10 10 nF + Fig. 23 CMH, CML Test Wave Forms (LED1 ON, OFF) 0V 6 Anode 8 Cathode VEE 9 8 Cathode VCC2 10 nF VEE 9 8 Cathode 0.1 F SCOPE 0V tf VOH 15 V 1V VOL VFAULT (CMH: IF = 10 mA, DESAT) VFAULT (CML: IF = 0 mA, DESAT) 1 500 V 10% tr tf GND 2V 0.8 V OPEN Page 11 of 22 PS9402 TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) INPUT IC POWER DISSIPATION vs. AMBIENT TEMPERATURE OUTPUT IC POWER DISSIPATION vs. AMBIENT TEMPERATURE Output IC Power Dissipation PO (mW) Input IC Power Dissipation PI (mW) 120 100 80 60 40 20 0 0 25 50 75 100 200 150 100 50 25 50 75 100 5 TA = +100C +85C +50C +25C 0C -40C 0.01 1.0 125 THRESHOLD INPUT CURRENT vs. AMBIENT TEMPERATURE Threshold Input Current IFLH (mA) Forward Current IF (mA) 250 FORWARD CURRENT vs. FORWARD VOLTAGE 0.1 1.2 1.4 1.6 1.8 2.0 2.2 VCC2 = 30 V, VEE = GND, VO > 5 V 4 3 2 1 0 -40 2.4 -20 0 20 40 60 80 100 Forward Voltage VF (V) Ambient Temperature TA (C) OUTPUT VOLTAGE vs. FORWARD CURRENT HIGH LEVEL OUTPUT VOLTAGE - OUTPUT SUPPLY VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT 0.0 High Level Output Voltage - Output Supply Voltage VOH - VCC 2 (V) VCC = 30 V, VEE = GND 25 20 15 10 5 0 300 Ambient Temperature TA (C) 1.0 30 350 Ambient Temperature TA (C) 10 35 400 0 0 125 100 Output Voltage VO (V) <R> Chapter Title 1 2 3 4 5 Forward Current IF (mA) VCC = 30 V, VEE = GND, IF = 10 mA -1.0 -2.0 -40C -3.0 TA = 110C -4.0 -5.0 -2.5 25C -2.0 -1.5 -1.0 -0.5 0.0 High Level Output Current IOH (A) Remark The graphs indicate nominal characteristics. R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 12 of 22 PS9402 Chapter Title VCC = 30 V, VEE = GND, 4.0 IF = 0 mA 3.0 2.0 -40C 1.0 0.5 1.0 1.5 2.0 2.5 VCC2 = 30 V, VEE = GND, Rg = 10 , Cg = 10 nF, f = 10 kHz, Duty cycle = 50% 150 tPHL 100 tPLH 50 PWD 0 7 10 13 16 Forward Current IF (mA) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. OUTPUT SUPPLY VOLTAGE PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. LOAD CAPACITANCE 200 VEE = GND, IF = 10 mA, Rg = 10 , Cg = 10 nF, f = 10 kHz, Duty cycle = 50% 150 tPHL 100 tPLH 50 PWD 0 15 20 25 30 200 VCC2 = 30 V, VEE = GND, IF = 10 mA, Rg = 10 , f = 10 kHz, Duty cycle = 50% 150 tPHL 100 tPLH 50 PWD 0 0 10 30 20 40 50 Output Supply Voltage VCC2 (V) Load Capacitance Cg (nF) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. LOAD RESISTANCE PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. AMBIENT TEMPERATURE 200 VCC2 = 30 V, VEE = GND, IF = 10 mA, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% 150 tPHL 100 tPLH 50 PWD 0 0 200 Low Level Output Current IOL (A) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL - tPLH (ns) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL - tPLH (ns) 0.0 0 Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL - tPLH (ns) 25C TA = 110C 10 20 30 40 50 Load Resistance Rg () Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL - tPLH (ns) Low Level Output Voltage VOL (V) 5.0 PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. FORWARD CURRENT Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL - tPLH (ns) LOW LEVEL OUTPUT VOLTAGE vs. LOW LEVEL OUTPUT CURRENT 200 VCC2 = 30 V, VEE = GND, IF = 10 mA, Rg = 10 , Cg = 10 nF, f = 10 kHz, Duty cycle = 50% 150 tPHL 100 tPLH 50 PWD 0 -40 -20 0 20 40 60 80 100 Ambient Temperature TA (C) Remark The graphs indicate nominal characteristics. R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 13 of 22 PS9402 Chapter Title HIGH LEVEL SUPPLY CURRENT, LOW LEVEL SUPPLY CURRENT vs. OUTPUT SUPPLY VOLTAGE HIGH LEVEL SUPPLY CURRENT, LOW LEVEL SUPPLY CURRENT vs. AMBIENT TEMPERATURE 2.5 ICC2H (IF = 10 mA) 2.0 ICC2L (IF = 0 mA) 1.5 1.0 0.5 -40 -20 0 20 ICC2H (IF = 10 mA) 2.0 ICC2L (IF = 0 mA) 1.5 1.0 0.5 15 100 20 25 30 HIGH LEVEL OUTPUT VOLTAGE - OUTPUT SUPPLY VOLTAGE vs. AMBIENT TEMPERATURE LOW LEVEL OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE VCC2 = 30 V, VEE = GND, IF = 10 mA IO = -650 A -1.0 -1.5 -100 mA -2.0 -2.5 0 20 40 60 80 0.5 Low Level Output Voltage VOL (V) High Level Output Voltage - Output Supply Voltage VOH - VCC2 (V) 80 2.5 Output Supply Voltage VCC2 (V) -3.0 -40 -20 VCC2 = 30 V, VEE = GND, IF = 10 mA, IO = 100 mA 0.4 0.3 0.2 0.1 0 -40 -20 100 0 20 40 60 80 100 Ambient Temperature TA (C) Ambient Temperature TA (C) HIGH LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE LOW LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE 0 High Level Output Current IOH (A) 60 VEE = GND, VO = OPEN Ambient Temperature TA (C) 0.0 -0.5 40 3.0 High Level Supply Current ICCH (mA), Low Level Supply Current ICCL (mA) VCC2 = 30 V, VEE = GND, VO = OPEN VCC2 = 30 V, VEE = GND, IF = 10 mA -1 -2 VO = VCC2 -4 V -3 -4 -5 VCC2 -15 V -6 -7 -40 -20 0 20 40 60 80 100 Ambient Temperature TA (C) 5 Low Level Output Current IOL (A) High Level Supply Current ICCH (mA), Low Level Supply Current ICCL (mA) 3.0 VCC2 = 30 V, VEE = GND, IF = 10 mA 4 VO = VEE +15 V 3 2 VEE +2.5 V 1 0 -40 -20 0 20 40 60 80 100 Ambient Temperature TA (C) Remark The graphs indicate nominal characteristics. R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 14 of 22 Chapter Title 4 VCC2 = 30 V, VEE = VE = GND, VtClamp = 2.5 V 3 2 1 0 -40 -20 0 20 40 60 80 100 BLANKING CAPACITOR CHARGING CURRENT vs. AMBIENT TEMPERATURE -0.10 VCC2 = 30 V, VEE = VE = GND, IF = 10 mA, VDESAT = 2 V -0.15 -0.20 -0.25 -0.30 -0.35 -40 -20 0 20 40 60 80 Ambient Temperature TA (C) Ambient Temperature TA (C) BLANKING CAPACITOR DISCHARGING CURRENT vs. AMBIENT TEMPERATURE DESAT THRESHOLD vs. AMBIENT TEMPERATURE 7.5 VCC2 = 30 V, VEE = VE = GND, IF = 0 mA, VDESAT = 7 V 50 40 30 20 -40 -20 0 20 40 60 80 DESAT Threshold VDESATth (V) 60 100 VEE = VE = GND, VCC2 > VUVLO-, VO < 5 V, IF = 10 mA 7.2 6.9 6.6 6.3 6.0 -40 -20 100 0 20 40 60 80 100 Ambient Temperature TA (C) Ambient Temperature TA (C) DESAT SENSE TO 90% VO DELAY vs. AMBIENT TEMPERATURE DESAT SENSE TO 10% VO DELAY vs. AMBIENT TEMPERATURE 500 VEE = VE = GND, Rg = 10 , Cg = 10 nF, RF = 2.1 k, CDESAT = 100 pF, VCC1 = 5 V 400 VCC2 = 30 V 300 200 15 V 100 0 -40 -20 0 20 40 60 80 100 Ambient Temperature TA (C) DESAT Sense to 10% VO Delay tDESAT (10%) ( s) DESAT Sense to 90% VO Delay tDESAT (90%) (ns) Blanking Capacitor Discharging Current IDSCHG (mA) Clamp Low Level Sinking Current ICL (A) CLAMP LOW LEVEL SINKING CURRENT vs. AMBIENT TEMPERATURE Blanking Capacitor Charging Current ICHG (mA) PS9402 3.0 2.5 VCC2 = 30 V 2.0 1.5 1.0 0.5 15 V VCC1 = 5 V, VEE = VE = GND, Rg = 10 , Cg = 10 nF, RF = 2.1 k, CDESAT = 100 pF 0.0 -40 -20 0 20 40 60 80 100 Ambient Temperature TA (C) Remark The graphs indicate nominal characteristics. R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 15 of 22 Chapter Title DESAT SENSE TO 10% VO DELAY vs. LOAD RESISTANCE 3.0 VCC1 = 5 V, VEE = VE = GND, Cg = 10 nF, RF = 2.1 k, CDESAT = 100 pF 2.5 VCC2 = 30 V 2.0 1.5 15 V 1.0 0.5 0.0 10 20 30 40 50 DESAT Sense to 10% VO Delay tDESAT (10%) ( s) DESAT Sense to 10% VO Delay tDESAT (10%) (s) PS9402 12.0 VCC1 = 5 V, VEE = VE = GND, RF = 2.1 k, Rg = 10 , CDESAT = 100 pF 9.0 VCC2 = 30 V 6.0 15 V 3.0 0.0 0 10 20 30 40 50 Load Resistance Rg () Load Capacitance Cg (nF) OUTPUT VOLTAGE vs. SUPPLY VOLTAGE POWER CONSUMPTION PER CYCLE vs. LOAD RESISTANCE 14 10 8 UVLOHYS 6 4 2 0 0 VUVLO+ (12.6 V) VUVLO- (11.3 V) 5 10 15 20 Supply Voltage VCC2 - VEE (V) Power Consumption Per Cycle ESW ( J) 8 12 Output Voltage VO (V) DESAT SENSE TO 10% VO DELAY vs. LOAD CAPACITANCE IF = 10 mA, VEE = GND 7 6 5 Qg = 1 000 nC 4 3 Qg = 500 nC 2 1 0 0 Qg = 100 nC 10 20 30 40 50 Load Resistance Rg () Remark The graphs indicate nominal characteristics. R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 16 of 22 PS9402 Chapter Title TAPING SPECIFICATIONS (UNIT: mm) 1.750.1 Outline and Dimensions (Tape) 2.00.1 4.00.1 1.5+0.1 -0 4.50.1 3.5 10.80.1 240.3 11.50.1 3.80.1 0.35 1.550.1 160.1 10.90.1 Tape Direction PS9402-E3 Outline and Dimensions (Reel) 2.00.5 21.00.8 1001.0 R 1.0 3302.0 2.00.5 13.00.2 25.51.0 29.51.0 Packing: 850 pcs/reel R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 23.9 to 27.4 Outer edge of flange Page 17 of 22 PS9402 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) C D B <R> Chapter Title A Part Number PS9402 Lead Bending lead bending type (Gull-wing) for surface mount R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 A B C D 9.85 1.27 0.96 1.65 Page 18 of 22 PS9402 Chapter Title NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering * Peak reflow temperature * Time of peak reflow temperature * Time of temperature higher than 220C * Time to preheat temperature from 120 to 180C * Number of reflows * Flux 260C or below (package surface temperature) 10 seconds or less 60 seconds or less 12030 s Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260C MAX. 220C to 60 s 180C 120C 12030 s (preheating) Time (s) (2) Wave soldering * Temperature * Time * Preheating conditions * Number of times * Flux 260C or below (molten solder temperature) 10 seconds or less 120C or below (package surface temperature) One (Allowed to be dipped in solder including plastic mold portion.) Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron * Peak Temperature (lead part temperature) 350C or below * Time (each pins) 3 seconds or less * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (4) Cautions * Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler's input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 19 of 22 PS9402 Chapter Title USAGE CAUTIONS <R> <R> 1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static electricity when handling. 2. Board designing (1) By-pass capacitor of more than 0.1 F is used between VCC and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close to the input block pattern of the photocoupler. If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT output side might affect the photocoupler's LED input, leading to malfunction or degradation of characteristics. (If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the range of the recommended operating conditions, and be sure to thoroughly evaluate operation.) 3. Make sure the rise/fall time of the forward current is 0.5 s or less. 4. In order to avoid malfunctions, make sure the rise/fall slope of the VCC2 is 3 V/s or less. 5. Avoid storage at a high temperature and high humidity. R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 20 of 22 PS9402 <R> Chapter Title SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.6 x UIORM., Pd < 5 pC Spec. Unit 40/110/21 UIORM Upr 1 130 1 808 Vpeak Vpeak Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 x UIORM., Pd < 5 pC Upr 2 119 Vpeak Highest permissible overvoltage UTR 8 000 Vpeak CTI 175 Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) 2 Material group (DIN EN 60664-1 VDE0110 Part 1) III a Storage temperature range Tstg -55 to +125 C Operating temperature range TA -40 to +110 C Ris MIN. Ris MIN. 1012 11 10 Tsi Isi Psi 175 400 700 C mA mW Ris MIN. 109 Isolation resistance, minimum value VIO = 500 V dc at TA = 25C VIO = 500 V dc at TA MAX. at least 100C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = Tsi R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 21 of 22 PS9402 Caution Chapter Title GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. * Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. * Do not burn, destroy, cut, crush, or chemically dissolve the product. * Do not lick the product or in any way allow it to enter the mouth. R08DS0014EJ0100 Rev.1.00 Jun 22, 2012 Page 22 of 22 Revision History PS9402 Data Sheet Rev. Date Page Description Summary 0.01 1.00 May 09, 2011 Jun 22, 2012 - Throughout Throughout p.3 p.4 p.5 p.6 p.7 pp.8 to 11 pp.12 to 16 p.18 p.20 p.21 First edition issued Preliminary Data Sheet - > Data Sheet Safety standards approved Modification of BLOCK DIAGRAM Modification of MARKING EXAMPLE Modification of ABSOLUTE MAXIMUM RATINGS Modification of ELECTRICAL CHARACTERISTICS (DC) Modification of SWITCHING CHARACTERISTICS (AC) Modification of TEST CIRCUIT Addition of TYPICAL CHARACTERISTICS Addition of RECOMMENDED MOUNT PAD DIMENSIONS Modification of USAGE CAUTIONS Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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