M93C56-MB3P/S - STMicroelectronics, Inc.

October 2011 Doc ID 4997 Rev 12 1/34

M93C86, M93C76, M93C66

M93C56, M93C46

16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide)

MICROWIRE® serial access EEPROM

Features

■Industry standard MICROWIRE bus

■Single supply voltage:

– 4.5 V to 5.5 V for M93Cx6

– 2.5 V to 5.5 V for M93Cx6-W

– 1.8 V to 5.5 V for M93Cx6-R

■Dual organization: by word (x16) or byte (x8)

■Programming instructions that work on: byte,

word or entire memory

■Self-timed programming cycle with auto-erase:

5 ms

■READY/BUSY signal during programming

■2 MHz clock rate

■Sequential read operation

■Enhanced ESD/latch-up behavior

■More than 1 million write cycles

■More than 40 year data retention

■Packages

– SO8, TSSOP8, UFDFPN8 packages:

RoHS-compliant and Halogen-free

(ECOPACK2®)

– PDIP8 package:

RoHS-compliant (ECOPACK1®)

PDIP8 (BN)

SO8 (MN)

150 mil width

TSSOP8 (DW)

169 mil width

UFDFPN8 (MB or MC)

2 x 3 mm (MLP)

Table 1. Device summary

Part

number

Memory

size

Supply

voltage

Part

number

Memory

size

Supply

voltage

Part

number

Memory

size

Supply

voltage

M93C46 1 Kbit 4.5 V to 5.5 V M93C66

4 Kbits

4.5 V to 5.5 V M93C86 16 Kbits 4.5 V to 5.5 V

M93C46-W 2.5 V to 5.5 V M93C66-W 2.5 V to 5.5 V M93C86-W 2.5 V to 5.5 V

M93C56

2 Kbits

4.5 V to 5.5 V M93C66-R 1.8 V to 5.5 V

M93C56-W 2.5 V to 5.5 V M93C76-W 8 Kbits 2.5 V to 5.5 V

M93C56-R 1.8 V to 5.5 V M93C76-R 1.8 V to 5.5 V

www.st.com

Contents M93C46, M93C56, M93C66, M93C76, M93C86
2/34 Doc ID 4997 Rev 12
Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connecting to the serial bus  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Operating features   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
1 Supply voltage (VCC)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
1.1 Operating supply voltage (VCC)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
1.2 Power-up conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
1.3 Power-up and device reset   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
1.4 Power-down  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Memory organization   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Instructions  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
1 Read Data from Memory  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
2 Write Enable and Write Disable  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
3 Erase Byte or Word  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
4 Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
5 Erase All . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
6 Write All  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
READY/BUSY status  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Common I/O operation  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Clock pulse counter  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DC and AC parameters  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Part numbering  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Revision history   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

M93C46, M93C56, M93C66, M93C76, M93C86 List of tables
Doc ID 4997 Rev 12 3/34
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Memory size versus organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 3. Signal names  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 4. Instruction set for the M93Cx6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 5. Instruction set for the M93C46 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 6. Instruction set for the M93C56 and M93C66  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 7. Instruction set for the M93C76 and M93C86  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 8. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 9. Operating conditions (M93Cx6)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 10. Operating conditions (M93Cx6-W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 11. Operating conditions (M93Cx6-R)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 12. AC measurement conditions (M93Cx6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 13. AC measurement conditions (M93Cx6-W and M93Cx6-R)  . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 14. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 15. DC characteristics (M93Cx6, device grade 6)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 16. DC characteristics (M93Cx6, device grade 3)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 17. DC characteristics (M93Cx6-W, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 18. DC characteristics (M93Cx6-W, device grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 19. DC characteristics (M93Cx6-R)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 20. AC characteristics (M93Cx6, device grade 6 or 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 21. AC characteristics (M93Cx6-W, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 22. AC characteristics (M93Cx6-W, device grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 23. AC characteristics (M93Cx6-R)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 24. PDIP8 – 8 lead plastic dual in-line package, 300 mils body width, package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 25. SO8 narrow – 8 lead plastic small outline, 150 mils body width, package data . . . . . . . . . 28
Table 26. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead
2 x 3 mm, data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 27. TSSOP8 – 8 lead thin shrink small outline, package mechanical data. . . . . . . . . . . . . . . . 30
Table 28. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 29. Document revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

List of figures M93C46, M93C56, M93C66, M93C76, M93C86
4/34 Doc ID 4997 Rev 12
List of figures
Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. DIP, SO, TSSOP and MLP connections (top view)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 3. Bus master and memory devices on the serial bus  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. READ, WRITE, WEN, WDS sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 5. ERASE, ERAL sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 6. WRAL sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 7. Write sequence with one clock glitch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 8. AC testing input output waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 9. Synchronous timing (start and op-code input)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 10. Synchronous timing (Read or Write). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 11. Synchronous timing (Read or Write). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 12. PDIP8 – 8 lead plastic dual in-line package, 300 mils body width, package
outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 13. SO8 narrow – 8 lead plastic small outline, 150 mils body width, package outline . . . . . . . 28
Figure 14. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead
2 x 3 mm, outline  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 15. TSSOP8 – 8 lead thin shrink small outline, package outline  . . . . . . . . . . . . . . . . . . . . . . . 30

M93C46, M93C56, M93C66, M93C76, M93C86 Description

Doc ID 4997 Rev 12 5/34

1 Description

The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16

Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through

the MICROWIRE bus protocol.

M93Cx6 devices operate within a voltage supply range from 4.5 V to 5.5 V, M93Cx6-W

devices operate within a voltage supply range from 2.5 V to 5.5 V and M93Cx6-R devices

operate within a voltage supply range from 1.8 V to 5.5 V.

The memory array can be configured either in bytes (x8b ) or words (x16b).

Figure 1. Logic diagram

Table 2. Memory size versus organization

Device Number of bits Number of 8-bit bytes Number of 16-bit words

M93C86 16384 2048 1024

M93C76 8192 1024 512

M93C66 4096 512 256

M93C56 2048 256 128

M93C46 1024 128 64

Table 3. Signal names

Signal name Function Direction

S Chip Select Input

D Serial Data input Input

Q Serial Data output Output

C Serial Clock Input

ORG Organization Select Input

VCC Supply voltage

VSS Ground

AI01928

VCC

M93Cx6

VSS

ORG

Description M93C46, M93C56, M93C66, M93C76, M93C86

6/34 Doc ID 4997 Rev 12

The M93Cx6 is accessed by a set of instructions, as summarized in Table 4, and in more

detail in Table 5: Instruction set for the M93C46 to Table 7: Instruction set for the M93C76

and M93C86).

A Read Data from Memory (READ) instruction loads the address of the first byte or word to

be read in an internal address register. The data at this address is then clocked out serially.

The address register is automatically incremented after the data is output and, if Chip Select

Input (S) is held High, the M93Cx6 can output a sequential stream of data bytes or words. In

this way, the memory can be read as a data stream from eight to 16384 bits long (in the

case of the M93C86), or continuously (the address counter automatically rolls over to 00h

when the highest address is reached).

Programming is internally self-timed (the external clock signal on Serial Clock (C) may be

stopped or left running after the start of a Write cycle) and does not require an Erase cycle

prior to the Write instruction. The Write instruction writes 8 or 16 bits at a time into one of the

byte or word locations of the M93Cx6. After the start of the programming cycle, a

Busy/Ready signal is available on Serial Data Output (Q) when Chip Select Input (S) is

driven High.

An internal Power-on Data Protection mechanism in the M93Cx6 inhibits the device when

the supply is too low.

Figure 2. DIP, SO, TSSOP and MLP connections (top view)

1. See Section 12: Package mechanical data for package dimensions, and how to identify pin-1.

2. DU = Don’t Use. The DU (do not use) pin does not contribute to the normal operation of the device. It is

reserved for use by STMicroelectronics during test sequences. The pin may be left unconnected or may be

connected to VCC or VSS.

Table 4. Instruction set for the M93Cx6

Instruction Description Data

READ Read Data from Memory Byte or Word

WRITE Write Data to Memory Byte or Word

WEN Write Enable

WDS Write Disable

ERASE Erase Byte or Word Byte or Word

ERAL Erase All Memory

WRAL Write All Memory with same Data

VSS

ORG

DUC

AI01929B

M93Cx6

M93C46, M93C56, M93C66, M93C76, M93C86 Connecting to the serial bus

Doc ID 4997 Rev 12 7/34

2 Connecting to the serial bus

Figure 3 shows an example of three memory devices connected to an MCU, on a serial bus.

Only one device is selected at a time, so only one device drives the Serial Data output (Q)

line at a time, the other devices are high impedance.

The pull-down resistor R (represented in Figure 3) ensures that no device is selected if the

bus master leaves the S line in the high impedance state.

In applications where the bus master may be in a state where all inputs/outputs are high

impedance at the same time (for example, if the bus master is reset during the transmission

of an instruction), the clock line (C) must be connected to an external pull-down resistor so

that, if all inputs/outputs become high impedance, the C line is pulled low (while the S line is

pulled low): this ensures that C does not become high at the same time as S goes low, and

so, that the tSLCH requirement is met. The typical value of R is 100 kΩ.

Figure 3. Bus master and memory devices on the serial bus

AI14377b

Bus master

M93xxx

memory device

SDO

SDI

SCK

CQD

M93xxx

memory device

CQD

M93xxx

memory device

CQD

CS3 CS2 CS1

ORG ORG ORG

RR R

VCC

VCC VCC VCC

VSS

VSS VSS VSS

Operating features M93C46, M93C56, M93C66, M93C76, M93C86

8/34 Doc ID 4997 Rev 12

3 Operating features

3.1 Supply voltage (VCC)

3.1.1 Operating supply voltage (VCC)

Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage

within the specified [VCC(min), VCC(max)] range must be applied. In order to secure a stable

DC supply voltage, it is recommended to decouple the VCC line with a suitable capacitor

(usually of the order of 10 nF to 100 nF) close to the VCC/VSS package pins.

This voltage must remain stable and valid until the end of the transmission of the instruction

and, for a Write instruction, until the completion of the internal write cycle (tW).

3.1.2 Power-up conditions

When the power supply is turned on, VCC rises from VSS to VCC. During this time, the Chip

Select (S) line is not allowed to float and should be driven to VSS, it is therefore

recommended to connect the S line to VSS via a suitable pull-down resistor.

The VCC rise time must not vary faster than 1 V/µs.

3.1.3 Power-up and device reset

In order to prevent inadvertent Write operations during power-up, a power on reset (POR)

circuit is included. At power-up (continuous rise of VCC), the device does not respond to any

instruction until VCC has reached the power on reset threshold voltage (this threshold is

lower than the minimum VCC operating voltage defined in Table 9: Operating conditions

(M93Cx6), Table 10: Operating conditions (M93Cx6-W) and Table 11: Operating conditions

(M93Cx6-R)).

When VCC passes the POR threshold, the device is reset and is in the following state:

●Standby Power mode

●deselected (assuming that there is a pull-down resistor on the S line)

3.1.4 Power-down

At power-down (continuous decrease in VCC), as soon as VCC drops from the normal

operating voltage to below the power on reset threshold voltage, the device stops

responding to any instruction sent to it.

During power-down, the device must be deselected and in the Standby Power mode (that is,

there should be no internal Write cycle in progress).

M93C46, M93C56, M93C66, M93C76, M93C86 Memory organization

Doc ID 4997 Rev 12 9/34

4 Memory organization

The M93Cx6 memory is organized either as bytes (x8) or as words (x16). If Organization

Select (ORG) is left unconnected (or connected to VCC) the x16 organization is selected;

when Organization Select (ORG) is connected to Ground (VSS) the x8 organization is

selected. When the M93Cx6 is in Standby mode, Organization Select (ORG) should be set

either to VSS or VCC for minimum power consumption. Any voltage between VSS and VCC

applied to Organization Select (ORG) may increase the Standby current.

Instructions M93C46, M93C56, M93C66, M93C76, M93C86

10/34 Doc ID 4997 Rev 12

5 Instructions

The instruction set of the M93Cx6 devices contains seven instructions, as summarized in

Table 5 to Table 7. Each instruction consists of the following parts, as shown in Figure 4:

READ, WRITE, WEN, WDS sequences:

●Each instruction is preceded by a rising edge on Chip Select Input (S) with Serial Clock

●A start bit, which is the first ‘1’ read on Serial Data Input (D) during the rising edge of

Serial Clock (C).

●Two op-code bits, read on Serial Data Input (D) during the rising edge of Serial Clock

(C). (Some instructions also use the first two bits of the address to define the op-code).

●The address bits of the byte or word that is to be accessed. For the M93C46, the

address is made up of 6 bits for the x16 organization or 7 bits for the x8 organization

(see Table 5). For the M93C56 and M93C66, the address is made up of 8 bits for the

x16 organization or 9 bits for the x8 organization (see Table 6). For the M93C76 and

M93C86, the address is made up of 10 bits for the x16 organization or 11 bits for the x8

organization (see Table 7).

The M93Cx6 devices are fabricated in CMOS technology and are therefore able to run as

slow as 0 Hz (static input signals) or as fast as the maximum ratings specified in Table 20:

AC characteristics (M93Cx6, device grade 6 or 3) to Table 23: AC characteristics (M93Cx6-

R).

Table 5. Instruction set for the M93C46

Instruction Description Start

bit

Op-

code

x8 origination (ORG = 0) x16 origination (ORG = 1)

Address

(1) Data

Required

clock

cycles

Address

(1) Data

Required

clock

cycles

READ Read Data from

Memory 1 10 A6-A0 Q7-Q0 A5-A0 Q15-Q0

WRITE Write Data to

Memory 1 01 A6-A0 D7-D0 18 A5-A0 D15-D0 25

WEN Write Enable 1 00 11X

XXXX 10 11 XXXX 9

WDS Write Disable 1 00 00X

XXXX 10 00 XXXX 9

ERASE Erase Byte or

Word 1 11 A6-A0 10 A5-A0 9

ERAL Erase All Memory 1 00 10X

XXXX 10 10 XXXX 9

WRAL Write All Memory

with same Data 100 01X

XXXX D7-D0 18 01 XXXX D15-D0 25

1. X = Don't Care bit.

M93C46, M93C56, M93C66, M93C76, M93C86 Instructions

Doc ID 4997 Rev 12 11/34

Table 6. Instruction set for the M93C56 and M93C66

Instruction Description Start

bit

Op-

code

x8 origination (ORG = 0) x16 origination (ORG = 1)

Address

(1) (2) Data Required

clock cycles

Address

(1) (3) Data Required

clock cycles

READ Read Data from

Memory 1 10 A8-A0 Q7-Q0 A7-A0 Q15-Q0

WRITE Write Data to

Memory 1 01 A8-A0 D7-D0 20 A7-A0 D15-D0 27

WEN Write Enable 1 00 1 1XXX

XXXX 12 11XX

XXXX 11

WDS Write Disable 1 00 0 0XXX

XXXX 12 00XX

XXXX 11

ERASE Erase Byte or

Word 1 11 A8-A0 12 A7-A0 11

ERAL Erase All

Memory 100

1 0XXX

XXXX 12 10XX

XXXX 11

WRAL Write All Memory

with same Data 100

0 1XXX

XXXX D7-D0 20 01XX

XXXX D15-D0 27

1. X = Don't Care bit.

2. Address bit A8 is not decoded by the M93C56.

3. Address bit A7 is not decoded by the M93C56.

Table 7. Instruction set for the M93C76 and M93C86

Instruction Description Start

bit

Op-

code

x8 Origination (ORG = 0) x16 Origination (ORG = 1)

Address(1),

(2) Data

Required

clock

cycles

Address

(1) (3) Data

Required

clock

cycles

READ Read Data from

Memory 1 10 A10-A0 Q7-Q0 A9-A0 Q15-Q0

WRITE Write Data to

Memory 1 01 A10-A0 D7-D0 22 A9-A0 D15-D0 29

WEN Write Enable 1 00 11X XXXX

XXXX 14 11 XXXX

XXXX 13

WDS Write Disable 1 00 00X XXXX

XXXX 14 00 XXXX

XXXX 13

ERASE Erase Byte or Word 1 11 A10-A0 14 A9-A0 13

ERAL Erase All Memory 1 00 10X XXXX

XXXX 14 10 XXXX

XXXX 13

WRAL Write All Memory

with same Data 100

01X XXXX

XXXX D7-D0 22 01 XXXX

XXXX D15-D0 29

1. X = Don't Care bit.

2. Address bit A10 is not decoded by the M93C76.

3. Address bit A9 is not decoded by the M93C76.

Instructions M93C46, M93C56, M93C66, M93C76, M93C86

12/34 Doc ID 4997 Rev 12

5.1 Read Data from Memory

The Read Data from Memory (READ) instruction outputs data on Serial Data Output (Q).

When the instruction is received, the op-code and address are decoded, and the data from

the memory is transferred to an output shift register. A dummy 0 bit is output first, followed

by the 8-bit byte or 16-bit word, with the most significant bit first. Output data changes are

triggered by the rising edge of Serial Clock (C). The M93Cx6 automatically increments the

internal address register and clocks out the next byte (or word) as long as the Chip Select

Input (S) is held High. In this case, the dummy 0 bit is not output between bytes (or words)

and a continuous stream of data can be read.

5.2 Write Enable and Write Disable

The Write Enable (WEN) instruction enables the future execution of erase or write

instructions, and the Write Disable (WDS) instruction disables it. When power is first

applied, the M93Cx6 initializes itself so that erase and write instructions are disabled. After

an Write Enable (WEN) instruction has been executed, erasing and writing remains enabled

until an Write Disable (WDS) instruction is executed, or until VCC falls below the power-on

reset threshold voltage. To protect the memory contents from accidental corruption, it is

advisable to issue the Write Disable (WDS) instruction after every write cycle. The Read

Data from Memory (READ) instruction is not affected by the Write Enable (WEN) or Write

Disable (WDS) instructions.

M93C46, M93C56, M93C66, M93C76, M93C86 Instructions

Doc ID 4997 Rev 12 13/34

Figure 4. READ, WRITE, WEN, WDS sequences

1. For the meanings of An, Xn, Qn and Dn, see Table 5, Table 6 and Table 7.

5.3 Erase Byte or Word

The Erase Byte or Word (ERASE) instruction sets the bits of the addressed memory byte (or

word) to 1. Once the address has been correctly decoded, the falling edge of the Chip

Select Input (S) starts the self-timed Erase cycle. The completion of the cycle can be

detected by monitoring the READY/BUSY line, as described in Section 6: READY/BUSY

status.

AI00878d

1 1 0 An A0

Qn Q0

DATA OUT

Read

SWrite

ADDR

CODE

10An A0

DATA IN

CODE

Dn D01

BUSY READY

SWrite

Enable

10XnX0D

CODE

101

SWrite

Disable

10XnX0D

CODE

0 00

CHECK

STATUS

ADDR

Instructions M93C46, M93C56, M93C66, M93C76, M93C86

14/34 Doc ID 4997 Rev 12

5.4 Write

For the Write Data to Memory (WRITE) instruction, 8 or 16 data bits follow the op-code and

address bits. These form the byte or word that is to be written. As with the other bits, Serial

Data Input (D) is sampled on the rising edge of Serial Clock (C).

After the last data bit has been sampled, the Chip Select Input (S) must be taken low before

the next rising edge of Serial Clock (C). If Chip Select Input (S) is brought low before or after

this specific time frame, the self-timed programming cycle will not be started, and the

addressed location will not be programmed. The completion of the cycle can be detected by

monitoring the READY/BUSY line, as described later in this document.

Once the Write cycle has been started, it is internally self-timed (the external clock signal on

Serial Clock (C) may be stopped or left running after the start of a Write cycle). The cycle is

automatically preceded by an Erase cycle, so it is unnecessary to execute an explicit erase

instruction before a Write Data to Memory (WRITE) instruction.

Figure 5. ERASE, ERAL sequences

1. For the meanings of An and Xn, please see Table 5, Table 6 and Table 7.

5.5 Erase All

The Erase All Memory (ERAL) instruction erases the whole memory (all memory bits are set

to 1). The format of the instruction requires that a dummy address be provided. The Erase

cycle is conducted in the same way as the Erase instruction (ERASE). The completion of

the cycle can be detected by monitoring the READY/BUSY line, as described in Section 6:

READY/BUSY status.

AI00879B

SERASE

1 1D

ADDR

CODE

BUSY READY

CHECK

STATUS

SERASE

ALL

1 0D

CODE

BUSY READY

CHECK

STATUS

0 0

An A0

Xn X0

ADDR

M93C46, M93C56, M93C66, M93C76, M93C86 Instructions

Doc ID 4997 Rev 12 15/34

5.6 Write All

As with the Erase All Memory (ERAL) instruction, the format of the Write All Memory with

same Data (WRAL) instruction requires that a dummy address be provided. As with the

Write Data to Memory (WRITE) instruction, the format of the Write All Memory with same

Data (WRAL) instruction requires that an 8-bit data byte, or 16-bit data word, be provided.

This value is written to all the addresses of the memory device. The completion of the cycle

can be detected by monitoring the READY/BUSY line, as described next.

Figure 6. WRAL sequence

1. For the meanings of Xn and Dn, please see Table 5, Table 6 and Table 7.

AI00880C

SWRITE

ALL

DATA IN

ADDR

CODE

Dn D0

BUSY READY

CHECK

STATUS

1000 1 Xn X0

READY/BUSY status M93C46, M93C56, M93C66, M93C76, M93C86

16/34 Doc ID 4997 Rev 12

6 READY/BUSY status

While the Write or Erase cycle is underway, for a WRITE, ERASE, WRAL or ERAL

instruction, the Busy signal (Q=0) is returned whenever Chip Select input (S) is driven high.

(Please note, though, that there is an initial delay, of tSLSH, before this status information

becomes available). In this state, the M93Cx6 ignores any data on the bus. When the Write

cycle is completed, and Chip Select Input (S) is driven high, the Ready signal (Q=1)

indicates that the M93Cx6 is ready to receive the next instruction. Serial Data Output (Q)

remains set to 1 until the Chip Select Input (S) is brought low or until a new start bit is

decoded.

7 Initial delivery state

The device is delivered with all bits in the memory array set to 1 (each byte contains FFh).

8 Common I/O operation

Serial Data Output (Q) and Serial Data Input (D) can be connected together, through a

current limiting resistor, to form a common, single-wire data bus. Some precautions must be

taken when operating the memory in this way, mostly to prevent a short circuit current from

flowing when the last address bit (A0) clashes with the first data bit on Serial Data Output

(Q). Please see the application note AN394 for details.

M93C46, M93C56, M93C66, M93C76, M93C86 Clock pulse counter

Doc ID 4997 Rev 12 17/34

9 Clock pulse counter

In a noisy environment, the number of pulses received on Serial Clock (C) may be greater

than the number delivered by the master (the microcontroller). This can lead to a

misalignment of the instruction of one or more bits (as shown in Figure 7) and may lead to

the writing of erroneous data at an erroneous address.

To avoid this problem, the M93Cx6 has an on-chip counter that counts the clock pulses from

the start bit until the falling edge of the Chip Select Input (S). If the number of clock pulses

received is not the number expected, the WRITE, ERASE, ERAL or WRAL instruction is

aborted, and the contents of the memory are not modified.

The number of clock cycles expected for each instruction, and for each member of the

M93Cx6 family, are summarized in Table 5: Instruction set for the M93C46 to Table 7:

Instruction set for the M93C76 and M93C86. For example, a Write Data to Memory (WRITE)

instruction on the M93C56 (or M93C66) expects 20 clock cycles (for the x8 organization)

from the start bit to the falling edge of Chip Select Input (S). That is:

1 Start bit

+ 2 Op-code bits

+ 9 Address bits

+ 8 Data bits

Figure 7. Write sequence with one clock glitch

AI01395

An-1

WRITE

START D0"1""0"

Glitch

An-2

ADDRESS AND DATA

ARE SHIFTED BY ONE BIT

Maximum rating M93C46, M93C56, M93C66, M93C76, M93C86

18/34 Doc ID 4997 Rev 12

10 Maximum rating

Stressing the device above the rating listed in the absolute maximum ratings table may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the operating sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect device reliability. Refer also to the STMicroelectronics SURE

Program and other relevant quality documents.

Table 8. Absolute maximum ratings

Symbol Parameter Min. Max. Unit

TBAmbient operating temperature –40 130 °C

TSTG Storage temperature –65 150 °C

TLEAD Lead temperature during soldering PDIP 260(1)

1. TLEAD max must not be applied for more than 10 s.

other packages See note (2)

2. Compliant with JEDEC Std J-STD-020 (for small body, Sn-Pb or Pb assembly), the ST ECOPACK®

7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS)

2002/95/EU.

°C

VOUT Output range (Q = VOH or Hi-Z) –0.50 VCC+0.5 V

VIN Input range –0.50 VCC+1 V

VCC Supply voltage –0.50 6.5 V

VESD Electrostatic discharge voltage (human body model)(3)

3. Positive and negative pulses applied on pin pairs, according to the AEC-Q100-002 (compliant with JEDEC

Std JESD22-A114, C1 = 100pF, R1 = 1500Ω, R2 = 500Ω).

4000 V

M93C46, M93C56, M93C66, M93C76, M93C86 DC and AC parameters

Doc ID 4997 Rev 12 19/34

11 DC and AC parameters

This section summarizes the operating and measurement conditions, and the dc and ac

characteristics of the device. The parameters in the dc and ac characteristic tables that

follow are derived from tests performed under the measurement conditions summarized in

the relevant tables. Designers should check that the operating conditions in their circuit

match the measurement conditions when relying on the quoted parameters.

Table 9. Operating conditions (M93Cx6)

Symbol Parameter Min. Max. Unit

VCC Supply voltage 4.5 5.5 V

Ambient operating temperature (device grade 6) –40 85 °C

Ambient operating temperature (device grade 3) –40 125 °C

Table 10. Operating conditions (M93Cx6-W)

Symbol Parameter Min. Max. Unit

VCC Supply voltage 2.5 5.5 V

Ambient operating temperature (device grade 6) –40 85 °C

Ambient operating temperature (device grade 3) –40 125 °C

Table 11. Operating conditions (M93Cx6-R)

Symbol Parameter Min. Max. Unit

VCC Supply voltage 1.8 5.5 V

TAAmbient operating temperature (device grade 6) –40 85 °C

Table 12. AC measurement conditions (M93Cx6)(1)

1. Output Hi-Z is defined as the point where data out is no longer driven.

Symbol Parameter Min. Max. Unit

CLLoad capacitance 100 pF

Input rise and fall times 50 ns

Input pulse voltages 0.4 V to 2.4 V V

Input timing reference voltages 1.0 V and 2.0 V V

Output timing reference voltages 0.8 V and 2.0 V V

DC and AC parameters M93C46, M93C56, M93C66, M93C76, M93C86

20/34 Doc ID 4997 Rev 12

Figure 8. AC testing input output waveforms

Table 13. AC measurement conditions (M93Cx6-W and M93Cx6-R)(1)

1. Output Hi-Z is defined as the point where data out is no longer driven.

Symbol Parameter Min. Max. Unit

CLLoad capacitance 100 pF

Input rise and fall times 50 ns

Input pulse voltages 0.2VCC to 0.8VCC V

Input timing reference voltages 0.3VCC to 0.7VCC V

Output timing reference voltages 0.3VCC to 0.7VCC V

Table 14. Capacitance(1)

1. Sampled only, not 100% tested, at TA = 25 °C and a frequency of 1 MHz.

Symbol Parameter Test condition Min Max Unit

COUT Output capacitance VOUT = 0V 5 pF

CIN Input capacitance VIN = 0V 5 pF

Table 15. DC characteristics (M93Cx6, device grade 6)

Symbol Parameter Test condition Min. Max. Unit

ILI Input leakage current 0V ≤ VIN ≤ VCC ±2.5 µA

ILO Output leakage current 0V ≤ VOUT ≤ VCC, Q in Hi-Z ±2.5 µA

ICC Supply current VCC = 5 V, S = VIH, f = 2 MHz,

Q = open 2 mA

ICC1 Supply current (Standby)

VCC = 5 V, S = VSS, C = VSS,

ORG = VSS or VCC,

pin7 = VCC, VSS or Hi-Z

15 µA

VIL(1)

1. Please note that the input and output levels defined in this table are compatible with TTL logic levels and

are NOT fully compatible with CMOS levels (as defined in Table 17)

Input low voltage VCC = 5 V ± 10% –0.45 0.8 V

VIH(1) Input high voltage VCC = 5 V ± 10% 2 VCC + 1 V

VOL(1) Output low voltage VCC = 5 V, IOL = 2.1 mA 0.4 V

VOH(1) Output high voltage VCC = 5 V, IOH = –400 µA 0.8VCC V

AI02553

2.4V

0.4V

2.0V

0.8V

INPUT OUTPUT

0.8VCC

0.2VCC

0.7VCC

0.3VCC

M93CXX-W & M93CXX-R

M93CXX

M93C46, M93C56, M93C66, M93C76, M93C86 DC and AC parameters

Doc ID 4997 Rev 12 21/34

Table 16. DC characteristics (M93Cx6, device grade 3)

Symbol Parameter Test condition Min. Max. Unit

ILI Input leakage current 0V ≤ VIN ≤ VCC ±2.5 µA

ILO Output leakage current 0V ≤ VOUT ≤ VCC, Q in Hi-Z ±2.5 µA

ICC Supply current VCC = 5 V, S = VIH, f = 2 MHz,

Q = open 2 mA

ICC1 Supply current (Standby)

VCC = 5 V, S = VSS, C = VSS,

ORG = VSS or VCC,

pin7 = VCC, VSS or Hi-Z

15 µA

VIL(1)

1. Please note that the input and output levels defined in this table are compatible with TTL logic levels and

are NOT fully compatible with CMOS levels (as defined in Table 17)

Input low voltage VCC = 5 V ± 10% –0.45 0.8 V

VIH(1) Input high voltage VCC = 5 V ± 10% 2 VCC + 1 V

VOL(1) Output low voltage VCC = 5 V, IOL = 2.1 mA 0.4 V

VOH(1) Output high voltage VCC = 5 V, IOH = –400 µA 0.8 VCC V

Table 17. DC characteristics (M93Cx6-W, device grade 6)

Symbol Parameter Test condition Min. Max. Unit

ILI Input leakage current 0V ≤ VIN ≤ VCC ±2.5 µA

ILO Output leakage current 0V ≤ VOUT ≤ VCC, Q in Hi-Z ±2.5 µA

ICC Supply current (CMOS

inputs)

VCC = 5 V, S = VIH, f = 2 MHz,

Q = open 2 mA

VCC = 2.5 V, S = VIH, f = 2 MHz,

Q = open 1 mA

ICC1 Supply current (Standby)

VCC = 2.5 V, S = VSS, C = VSS,

ORG = VSS or VCC,

pin7 = VCC, VSS or Hi-Z

5 µA

VIL Input low voltage (D, C, S) –0.45 0.2 VCC V

VIH Input high voltage (D, C, S) 0.7 VCC VCC + 1 V

VOL Output low voltage (Q) VCC = 5 V, IOL = 2.1 mA 0.4 V

VCC = 2.5 V, IOL = 100 µA 0.2 V

VOH Output high voltage (Q) VCC = 5 V, IOH = –400 µA 0.8 VCC V

VCC = 2.5 V, IOH = –100 µA VCC–0.2 V

DC and AC parameters M93C46, M93C56, M93C66, M93C76, M93C86

22/34 Doc ID 4997 Rev 12

Table 18. DC characteristics (M93Cx6-W, device grade 3)

Symbol Parameter Test condition Min.(1)

1. New product: identified by Process Identification letter W or G or S.

Max. (1) Unit

ILI Input leakage current 0V ≤ VIN ≤ VCC ±2.5 µA

ILO Output leakage current 0V ≤ VOUT ≤ VCC, Q in Hi-Z ±2.5 µA

ICC Supply current (CMOS

inputs)

VCC = 5 V, S = VIH, f = 2 MHz,

Q = open 2 mA

VCC = 2.5 V, S = VIH, f = 2 MHz,

Q = open 1 mA

ICC1 Supply current (Standby)

VCC = 2.5 V, S = VSS, C = VSS,

ORG = VSS or VCC,

pin7 = VCC, VSS or Hi-Z

5 µA

VIL Input low voltage (D, C,

S) –0.45 0.2 VCC V

VIH Input high voltage (D, C,

S) 0.7 VCC VCC + 1 V

VOL Output low voltage (Q) VCC = 5 V, IOL = 2.1 mA 0.4 V

VCC = 2.5 V, IOL = 100 µA 0.2 V

VOH Output high voltage (Q) VCC = 5 V, IOH = –400 µA 0.8 VCC V

VCC = 2.5 V, IOH = –100 µA VCC–0.2 V

Table 19. DC characteristics (M93Cx6-R)

Symbol Parameter Test condition Min.(1)

1. This product is under development. For more information, please contact your nearest ST sales office.

Max. (1) Unit

ILI Input leakage current 0V ≤ VIN ≤ VCC ±2.5 µA

ILO Output leakage current 0V ≤ VOUT ≤ VCC, Q in Hi-Z ±2.5 µA

ICC Supply current (CMOS

inputs)

VCC = 5 V, S = VIH, f = 2 MHz,

Q = open 2 mA

VCC = 1.8 V, S = VIH, f = 1 MHz,

Q = open 1 mA

ICC1 Supply current (Standby)

VCC = 1.8 V, S = VSS, C = VSS,

ORG = VSS or VCC,

pin7 = VCC, VSS or Hi-Z

2 µA

VIL Input low voltage (D, C,

S) –0.45 0.2 VCC V

VIH Input high voltage (D, C,

S) 0.8 VCC VCC + 1 V

VOL Output low voltage (Q) VCC = 1.8 V, IOL = 100 µA 0.2 V

VOH Output high voltage (Q) VCC = 1.8 V, IOH = –100 µA VCC–0.2 V

M93C46, M93C56, M93C66, M93C76, M93C86 DC and AC parameters

Doc ID 4997 Rev 12 23/34

Table 20. AC characteristics (M93Cx6, device grade 6 or 3)

Test conditions specified in Table 12 and Table 9

Symbol Alt. Parameter Min. Max. Unit

fCfSK Clock frequency D.C. 2 MHz

tSLCH Chip Select low to Clock high 50 ns

tSHCH tCSS

Chip Select setup time

M93C46, M93C56, M93C66 50 ns

Chip Select setup time

M93C76, M93C86 50 ns

tSLSH(1)

1. Chip Select Input (S) must be brought low for a minimum of tSLSH between consecutive instruction cycles.

tCS Chip Select low to Chip Select high 200 ns

tCHCL(2)

2. tCHCL + tCLCH ≥ 1 / fC.

tSKH Clock high time 200 ns

tCLCH(2) tSKL Clock low time 200 ns

tDVCH tDIS Data in setup time 50 ns

tCHDX tDIH Data in hold time 50 ns

tCLSH tSKS Clock setup time (relative to S) 50 ns

tCLSL tCSH Chip Select hold time 0 ns

tSHQV tSV Chip Select to READY/BUSY status 200 ns

tSLQZ tDF Chip Select low to output Hi-Z 100 ns

tCHQL tPD0 Delay to output low 200 ns

tCHQV tPD1 Delay to output valid 200 ns

tWtWP Erase or Write cycle time 5 ms

Table 21. AC characteristics (M93Cx6-W, device grade 6)

Test conditions specified in Table 13 and Table 10

Symbol Alt. Parameter Min. Max. Unit

fCfSK Clock frequency D.C. 2 MHz

tSLCH Chip Select low to Clock high 50 ns

tSHCH tCSS Chip Select setup time 50 ns

tSLSH(1) tCS Chip Select low to Chip Select high 200 ns

tCHCL(2) tSKH Clock high time 200 ns

tCLCH(2) tSKL Clock low time 200 ns

tDVCH tDIS Data in setup time 50 ns

tCHDX tDIH Data in hold time 50 ns

tCLSH tSKS Clock setup time (relative to S) 50 ns

tCLSL tCSH Chip Select hold time 0 ns

tSHQV tSV Chip Select to READY/BUSY status 200 ns

DC and AC parameters M93C46, M93C56, M93C66, M93C76, M93C86

24/34 Doc ID 4997 Rev 12

tSLQZ tDF Chip Select low to output Hi-Z 100 ns

tCHQL tPD0 Delay to output low 200 ns

tCHQV tPD1 Delay to output valid 200 ns

tWtWP Erase or Write cycle time 5 ms

1. Chip Select Input (S) must be brought low for a minimum of tSLSH between consecutive instruction cycles.

2. tCHCL + tCLCH ≥ 1 / fC.

Table 22. AC characteristics (M93Cx6-W, device grade 3)

Test conditions specified in Table 13 and Table 10

Symbol Alt. Parameter Min. Max. Unit

fCfSK Clock frequency D.C. 2 MHz

tSLCH Chip Select low to Clock high 50 ns

tSHCH tCSS Chip Select set-up time 50 ns

tSLSH(1)

1. Chip Select Input (S) must be brought low for a minimum of tSLSH between consecutive instruction cycles.

tCS Chip Select low to Chip Select high 200 ns

tCHCL(2)

2. tCHCL + tCLCH ≥ 1 / fC.

tSKH Clock high time 200 ns

tCLCH(2) tSKL Clock low time 200 ns

tDVCH tDIS Data in set-up time 50 ns

tCHDX tDIH Data in hold time 50 ns

tCLSH tSKS Clock set-up time (relative to S) 50 ns

tCLSL tCSH Chip Select hold time 0 ns

tSHQV tSV Chip Select to READY/BUSY status 200 ns

tSLQZ tDF Chip Select low to output Hi-Z 100 ns

tCHQL tPD0 Delay to output low 200 ns

tCHQV tPD1 Delay to output valid 200 ns

tWtWP Erase or Write cycle time 5 ms

Table 21. AC characteristics (M93Cx6-W, device grade 6) (continued)

Test conditions specified in Table 13 and Table 10

Symbol Alt. Parameter Min. Max. Unit

M93C46, M93C56, M93C66, M93C76, M93C86 DC and AC parameters

Doc ID 4997 Rev 12 25/34

Figure 9. Synchronous timing (start and op-code input)

Table 23. AC characteristics (M93Cx6-R)

Test conditions specified in Table 13 and Table 11

Symbol Alt. Parameter Min.(1)

1. This product is under development. For more information, please contact your nearest ST sales office.

Max.(1) Unit

fCfSK Clock frequency D.C. 1 MHz

tSLCH Chip Select low to Clock high 250 ns

tSHCH tCSS Chip Select setup time 50 ns

tSLSH(2)

2. Chip Select Input (S) must be brought low for a minimum of tSLSH between consecutive instruction cycles.

tCS Chip Select low to Chip Select high 250 ns

tCHCL(3)

3. tCHCL + tCLCH ≥ 1 / fC.

tSKH Clock high time 250 ns

tCLCH(3) tSKL Clock low time 250 ns

tDVCH tDIS Data in setup time 100 ns

tCHDX tDIH Data in hold time 100 ns

tCLSH tSKS Clock setup time (relative to S) 100 ns

tCLSL tCSH Chip Select hold time 0 ns

tSHQV tSV Chip Select to READY/BUSY status 400 ns

tSLQZ tDF Chip Select low to output Hi-Z 200 ns

tCHQL tPD0 Delay to output low 400 ns

tCHQV tPD1 Delay to output valid 400 ns

tWtWP Erase or Write cycle time 10 ms

AI01428

OP CODE OP CODE

START

OP CODE INPUTSTART

tDVCH

tSHCH

tCLSH tCHCL

tCLCH

tCHDX

DC and AC parameters M93C46, M93C56, M93C66, M93C76, M93C86

26/34 Doc ID 4997 Rev 12

Figure 10. Synchronous timing (Read or Write)

Figure 11. Synchronous timing (Read or Write)

AI00820C

ADDRESS INPUT

Hi-Z

tDVCH

tCLSL

DATA OUTPUT

tCHQVtCHDX

tCHQL

tSLSH

tSLQZ

Q15/Q7 Q0

AI01429

ADDRESS/DATA INPUT

Hi-Z

tDVCH

tSLCH

A0/D0

WRITE CYCLE

tSLSHtCHDX

tCLSL

tSLQZ

BUSY

tSHQV

READY

M93C46, M93C56, M93C66, M93C76, M93C86 Package mechanical data

Doc ID 4997 Rev 12 27/34

12 Package mechanical data

In order to meet environmental requirements, ST offers the M93C86, M93C76, M93C66,

M93C56 and M93C46 in ECOPACK® packages. These packages have a lead-free second

level interconnect. The category of second level interconnect is marked on the package and

on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings

related to soldering conditions are also marked on the inner box label. ECOPACK is an ST

trademark. ECOPACK specifications are available at www.st.com.

Figure 12. PDIP8 – 8 lead plastic dual in-line package, 300 mils body width, package

outline

1. Drawing is not to scale.

Table 24. PDIP8 – 8 lead plastic dual in-line package, 300 mils body width, package

mechanical data

Symbol millimeters inches(1)

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Typ. Min. Max. Typ. Min. Max.

A 5.33 0.2098

A1 0.38 0.015

A2 3.3 2.92 4.95 0.1299 0.115 0.1949

b 0.46 0.36 0.56 0.0181 0.0142 0.022

b2 1.52 1.14 1.78 0.0598 0.0449 0.0701

c 0.25 0.2 0.36 0.0098 0.0079 0.0142

D 9.27 9.02 10.16 0.365 0.3551 0.4

E 7.87 7.62 8.26 0.3098 0.3 0.3252

E1 6.35 6.1 7.11 0.25 0.2402 0.2799

e 2.54 - - 0.1 - -

eA 7.62 - - 0.3 - -

eB 10.92 0.4299

L 3.3 2.92 3.81 0.1299 0.115 0.15

PDIP-B

Package mechanical data M93C46, M93C56, M93C66, M93C76, M93C86

28/34 Doc ID 4997 Rev 12

Figure 13. SO8 narrow – 8 lead plastic small outline, 150 mils body width, package

outline

1. Drawing is not to scale.

Table 25. SO8 narrow – 8 lead plastic small outline, 150 mils body width, package

data

Symbol millimeters inches(1)

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Typ Min Max Typ Min Max

A 1.75 0.0689

A1 0.1 0.25 0.0039 0.0098

A2 1.25 0.0492

b 0.28 0.48 0.011 0.0189

c 0.17 0.23 0.0067 0.0091

ccc 0.1 0.0039

D 4.9 4.8 5 0.1929 0.189 0.1969

E 6 5.8 6.2 0.2362 0.2283 0.2441

E1 3.9 3.8 4 0.1535 0.1496 0.1575

e 1.27 - - 0.05 - -

h 0.25 0.5 0.0098 0.0197

k 0°8° 0°8°

L 0.4 1.27 0.0157 0.05

L1 1.04 0.0409

SO-A

ccc

h x 45˚

0.25 mm

GAUGE PLANE

M93C46, M93C56, M93C66, M93C76, M93C86 Package mechanical data

Doc ID 4997 Rev 12 29/34

Figure 14. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead

2 x 3 mm, outline

1. Drawing is not to scale.

2. The central pad (area E2 by D2 in the above illustration) is pulled, internally, to VSS. It must not be allowed

to be connected to any other voltage or signal line on the PCB, for example during the soldering process.

3. The circle in the top view of the package indicates the position of pin 1

Table 26. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead

2 x 3 mm, data

Symbol millimeters inches(1)

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Typ Min Max Typ Min Max

A 0.550 0.450 0.600 0.0217 0.0177 0.0236

A1 0.020 0.000 0.050 0.0008 0.0000 0.0020

b 0.250 0.200 0.300 0.0098 0.0079 0.0118

D 2.000 1.900 2.100 0.0787 0.0748 0.0827

D2 (rev MB) 1.600 1.500 1.700 0.0630 0.0591 0.0669

D2 (rev MC) 1.200 1.600 0.0472 0.0630

E 3.000 2.900 3.100 0.1181 0.1142 0.1220

E2 (rev MB) 0.200 0.100 0.300 0.0079 0.0039 0.0118

E2 (rev MC) 1.200 1.600 0.0472 0.0630

e 0.500 0.0197

K 0.300 0.0118

L 0.300 0.500 0.0118 0.0197

L1 0.150 0.0059

L3 0.300 0.0118

eee(2)

2. Applied for exposed die paddle and terminals. Exclude embedding part of exposed die paddle from

measuring.

0.080 0.0031

ZW_MEe

eee

L3 L1

e b

Pin 1

MB MC

Package mechanical data M93C46, M93C56, M93C66, M93C76, M93C86

30/34 Doc ID 4997 Rev 12

Figure 15. TSSOP8 – 8 lead thin shrink small outline, package outline

1. Drawing is not to scale.

Table 27. TSSOP8 – 8 lead thin shrink small outline, package mechanical data

Symbol millimeters inches(1)

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Typ. Min. Max. Typ. Min. Max.

A 1.2 0.0472

A1 0.05 0.15 0.002 0.0059

A2 1 0.8 1.05 0.0394 0.0315 0.0413

b 0.19 0.3 0.0075 0.0118

c 0.09 0.2 0.0035 0.0079

CP 0.1 0.0039

D 3 2.9 3.1 0.1181 0.1142 0.122

e 0.65 - - 0.0256 - -

E 6.4 6.2 6.6 0.252 0.2441 0.2598

E1 4.4 4.3 4.5 0.1732 0.1693 0.1772

L 0.6 0.45 0.75 0.0236 0.0177 0.0295

L1 1 0.0394

α0° 8° 0° 8°

N (pin number) 8 8

TSSOP8AM

EE1

A2A

M93C46, M93C56, M93C66, M93C76, M93C86 Part numbering

Doc ID 4997 Rev 12 31/34

13 Part numbering

For a list of available options (speed, package, etc.) or for further information on any aspect

of this device, please contact your nearest ST sales office.

Table 28. Ordering information scheme

Example: M93C86 – W MN 6 T P /S

Device type

M93 = MICROWIRE serial access EEPROM

Device function

86 = 16 Kbit (2048 x 8)

76 = 8 Kbit (1024 x 8)

66 = 4 Kbit (512 x 8)

56 = 2 Kbit (256 x 8)

46 = 1 Kbit (128 x 8)

Operating voltage

blank = VCC = 4.5 to 5.5 V

W = VCC = 2.5 to 5.5 V

R = VCC = 1.8 to 5.5 V

Package

BN = PDIP8

MN = SO8 (150 mils width)

MB or MC = UFDFPN8 (MLP8)

DW = TSSOP8 (169 mils width)

Device grade

6 = Industrial temperature range, –40 to 85 °C.

Device tested with standard test flow

3 = Device tested with high reliability certified flow(1).

Automotive temperature range (–40 to 125 °C)

1. ST strongly recommends the use of the Automotive Grade devices for use in an automotive

environment. The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801.

Please ask your nearest ST sales office for a copy.

Packing

blank = standard packing

T = tape and reel packing

Plating technology

P or G = ECOPACK® (RoHS compliant)

Process(2)

2. Used only for device grade 3.

/S = F6SP36%

Revision history M93C46, M93C56, M93C66, M93C76, M93C86

32/34 Doc ID 4997 Rev 12

14 Revision history

Table 29. Document revision history

Date Revision Changes

04-Feb-2003 2.0

Document reformatted, and reworded, using the new template.

Temperature range 1 removed. TSSOP8 (3x3mm) package added. New

products, identified by the process letter W, added, with fc(max)

increased to 1MHz for -R voltage range, and to 2MHz for all other

ranges (and corresponding parameters adjusted)

26-Mar-2003 2.1

Value of standby current (max) corrected in DC characteristics tables for

-W and -R ranges

VOUT and VIN separated from VIO in the Absolute Maximum Ratings

table

04-Apr-2003 2.2 Values corrected in AC characteristics tables for -W range (tSLSH, tDVCH,

tCLSL) for devices with Process Identification Letter W

23-May-2003 2.3 Standby current corrected for -R range

27-May-2003 2.4 Turned-die option re-instated in Ordering Information Scheme

25-Nov-2003 3.0 Table of contents, and Pb-free options added. Temperature range 7

added. VIL(min) improved to –0.45V.

30-Mar-2004 4.0

MLP package added. Absolute Maximum Ratings for VIO(min) and

VCC(min) changed. Soldering temperature information clarified for

RoHS compliant devices. Device grade information clarified. Process

identification letter “G” information added

16-Aug-2004 5.0

M93C06 removed. Device grade information further clarified. Process

identification letter “S” information added. Turned-die package option

removed. Product list summary added.

27-Oct-2005 6.0

current product/new product distinction removed. ICC and ICC1 values for

current product removed from tables 15, 16 and 17 and AC

characteristics for current product removed from Tables 20 and 21.

Clock rate added to Features.

“Q = open” added to ICC Test conditions in DC Characteristics Tables 15,

16, 17, 18 and 19.

Process added to Table 28.: Ordering information scheme. POWER ON

DATA PROTECTION section removed, replaced by Operating features

and Active Power and Standby Power modes. Initial delivery state

added.

SO8N and TSSOP8 packages updated. PDIP-specific TLEAD added to

Table 8.: Absolute maximum ratings.

M93C46, M93C56, M93C66, M93C76, M93C86 Revision history
Doc ID 4997 Rev 12 33/34
31-Jul-2007 7
Document reformatted. TSSOP8 3 × 3 mm (DS) package removed.
Erase/Write Enable (EWEN) instruction replaced by Write Enable 
(WEN). Erase/Write Disable (EWDS) instruction replaced by Write 
Disable (WDS).
Section 7: Initial delivery state modified, ACTIVE POWER AND 
STANDBY POWER MODES section removed.
ICC1 test conditions modified in Table 15, Table 16, Table 17, Table 18 
and Table 19. Note 1 added to Table 15.
tW parameter description modified in Table 20, Ta ble 21, Table 22 and 
Table 23.
SO8 narrow and UFDFPN8 package specifications updated (see 
Section 12: Package mechanical data).
Table 29, Table 30, Ta ble 31, Table 32 and Table 33 added.
Blank option removed under Plating technology in Table 27: TSSOP8 – 
8 lead thin shrink small outline, package mechanical data.
Section 2: Connecting to the serial bus added. Device grade 7 removed.
29-Jan-2008 8
Small text changes.
M93C76-R root part number added.
Section 2: Connecting to the serial bus modified (pull-down resistor 
added to Figure 3: Bus master and memory devices on the serial bus 
and paragraph added).
Section 3.1.2: Power-up conditions corrected.
TLEAD modified in Table 8: Absolute maximum ratings.
VOH min guaranteed at a higher value in DC characteristics tables 15, 
16, 17 and 18.
M93C56-R is also offered in TSSOP8 package (see Table 30).
Package mechanical inch values calculated from mm and rounded to 4 
decimal digits in Section 12: Package mechanical data
TSSOP8 (DW) package specifications updated.
01-Apr-2010 9
Modified footnote in Table 15  and Table 16 on page 21
Updated Figure 14: UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual 
flat package no lead 2 x 3 mm, outline and Table 26: UFDFPN8 (MLP8) 
8-lead ultra thin fine pitch dual flat package no lead 2 x 3 mm, data
29-Apr-2010 10 Updated Figure 31: Available M93C66-x products (package, voltage 
range, temperature grade) UFDFPN option.
12-Apr-2011 11
Updated Table 8: Absolute maximum ratings, MLP8 package data in 
Section 12: Package mechanical data and process data in Section 9: 
Clock pulse counter.
Deleted Table 29: Available M93C46-x products (package, voltage 
range, temperature grade), Table 30: Available M93C56-x products 
(package, voltage range, temperature grade), Table 31: Available 
M93C66-x products (package, voltage range, temperature grade), 
Table 32: Available M93C76-x products (package, voltage range, 
temperature grade) and Table 33: Available M93C86-x products 
(package, voltage range, temperature grade).
05-Oct-2011 12
Updated Table 1: Device summary and Table 9: Operating conditions 
(M93Cx6).
Modified footnote 2 in Table 8.
Table 29. Document revision history  (continued)
Date Revision Changes

M93C46, M93C56, M93C66, M93C76, M93C86

34/34 Doc ID 4997 Rev 12

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