Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 HiPak IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values 1) Parameter Collector-emitter voltage DC collector current Symbol VCES Conditions VGE = 0 V, Tvj min 25 C IC TC = 85 C, Tvj = 125 C Peak collector current ICM tp = 1 ms Gate-emitter voltage VGES Total power dissipation Ptot DC forward current Peak forward current -20 TC = 25 C, Tvj = 125 C IF max Unit 6500 V 500 A 1000 A 20 V 6250 W 500 A IFRM tp = 1 ms 1000 A Surge current IFSM VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave 5000 A IGBT short circuit SOA tpsc 10 s Isolation voltage Visol 10200 V Junction temperature Tvj 125 C Junction operating temperature VCC = 4400 V, VCEM CHIP VGE 15 V, Tvj 6500 V 125 C 1 min, f = 50 Hz Tvj(op) -50 125 C Case temperature TC -50 125 C Storage temperature Tstg C Mounting torques 2) 1) 2) -50 125 Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 for detailed mounting instructions refer to ABB Document No. 5SYA2039 Nm IGBT characteristic values 3) Parameter Symbol Collector (-emitter) breakdown voltage Collector-emitter saturation voltage 4) Collector cut-off current Gate leakage current Gate-emitter threshold voltage Conditions min V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 6500 VCE sat IC = 500 A, VGE = 15 V ICES IGES VGE(TO) Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) VCE = 6500 V, VGE = 0 V VCE = 0 V, VGE = Turn-on switching energy Eon VCC = 3600 V, IC = 500 A, RG = 3.9 , CGE = 150 nF, VGE = 15 V, L = 280 nH, inductive load Turn-off switching energy Eoff VCC = 3600 V, IC = 500 A, RG = 22 , CGE = 150 nF, VGE = 15 V, L = 280 nH, inductive load Short circuit current ISC tpsc 10 s, VGE = 15 V, VCC = 4400 V, VCEM CHIP 6500 V 3) 4) Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level 2 5SNA 0500J650300 | Doc. No. 5SYA 1413-02 04-2012 2.9 4.5 8 mA 40 70 mA -500 500 nA 5.5 7.5 V Tvj = 25 C Tvj = 125 C VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C tf V 3.9 IC = 500 A, VCE = 3600 V, VGE = -15 V ..15 V Fall time Unit Tvj = 25 C 20 V, Tvj = 125 C VCC = 3600 V, IC = 500 A, RG = 22 , CGE = 150 nF, VGE = 15 V, L = 280 nH, inductive load max Tvj = 125 C IC = 160 mA, VCE = VGE, Tvj = 25 C VCC = 3600 V, IC = 500 A, RG = 3.9 , CGE = 150 nF, VGE = 15 V, L = 280 nH, inductive load typ V V 5.3 C 75.6 nF 4.4 nF 1.3 nF Tvj =25 C 780 ns Tvj =125 C 710 ns Tvj =25 C 200 ns Tvj =125 C 240 ns Tvj =25 C 4750 ns Tvj =125 C 5300 ns Tvj =25 C 530 ns Tvj =125 C 660 ns Tvj =25 C 2750 mJ Tvj =125 C 3950 mJ Tvj =25 C 2700 mJ Tvj =125 C 3500 mJ Tvj =125 C 2250 A Diode characteristic values 5) Parameter Symbol Forward voltage 6) VF Reverse recovery current Qrr Reverse recovery time trr Reverse recovery energy 6) min typ max Unit 3.2 3.8 V Tvj =125 C 3.4 4.0 V Tvj =25 C 610 Tvj =125 C 650 A Tvj =25 C 550 C Tvj =125 C 950 C Tvj =25 C 1800 ns Tvj =125 C 2800 ns Tvj =25 C 900 mJ Tvj =125 C 1850 mJ Tvj =25 C IF = 500 A Irr Recovered charge 5) Conditions VCC = 3600 V, IF = 500 A, VGE = 15 V, RG = 3.9 , CGE = 150 nF, di/dt = 2 kA/s L = 280 nH, inductive load Erec A Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance min typ max Unit Rth(j-c)IGBT 0.016 K/W Rth(j-c)DIODE 0.032 K/W 2) case to heatsink Diode thermal resistance case to heatsink Rth(c-s)IGBT IGBT per switch, Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 0.012 K/W 0.024 K/W 2) Partial discharge extinction voltage Ve Comparative tracking index CTI Module stray inductance L Resistance, terminal-chip 2) Conditions f = 50 Hz, QPD grease = 1W/m x K 10 pC (acc. To IEC 61287) 5100 V > 600 27 CE RCC'+EE' TC =25 C 0.1 TC =125 C 0.15 nH m for detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties 7) Parameter Symbol Conditions Dimensions LxWxH Typical Clearance distance in air da Surface creepage distance ds Mass m 7) Package and mechanical properties according to IEC 60747 - 15 3 5SNA 0500J650300 | Doc. No. 5SYA 1413-02 04-2012 min typ 130 x 140 x 48 according to IEC 60664-1 and EN 50124-1 Term. to base: 40 Term. to term: 26 according to IEC 60664-1 Term. to base: 64 and EN 50124-1 Term. to term: 56 max Unit mm mm mm 1150 g Electrical configuration 5 7 4 6 3 2 1 Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. 4 5SNA 0500J650300 | Doc. No. 5SYA 1413-02 04-2012 1000 1000 900 900 VCE = VGE 800 800 25 C 700 700 600 125 C IC [A] IC [A] 600 500 500 400 400 300 300 200 200 125 C 100 25 C 100 VGE = 15 V 0 0 0 1 2 3 4 5 6 5 6 7 8 VCE [V] Fig. 1 9 10 11 12 13 6 7 8 VGE [V] Typical on-state characteristics, chip level Fig. 2 1000 Typical transfer characteristics, chip level 1000 Tvj = 25 C Tvj = 125 C 900 900 17 V 17 V 800 800 15 V 15 V 700 700 13 V 13 V 600 IC [A] IC [A] 600 500 11 V 400 500 11 V 400 300 300 200 200 9V 9V 100 100 0 0 0 1 2 3 4 5 6 0 VCE [V] Fig. 3 Typical output characteristics, chip level 5 5SNA 0500J650300 | Doc. No. 5SYA 1413-02 04-2012 1 2 3 4 5 VCE [V] Fig. 4 Typical output characteristics, chip level 16 VCC = 3600 V VGE = 15 V RGon = 3.9 Ohm RGoff = 22 Ohm CGE = 150 nF T vj = 125 C L = 280 nH Eon, Eoff [J] 8 VCC = 3600 V IC = 500 A CGE = 150 nF VGE = 15 V Tvj = 125 C L = 280 nH 14 12 Eon Eon 10 Eon, Eoff [J] 10 6 Eoff 8 6 4 Eoff 4 2 2 0 0 0 200 400 600 800 0 1000 5 10 Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 20 30 tf 1 td(off) td(on tr td(on), tr, td(off), tf [s] VCC = 3600 V RGon = 3.9 Ohm RGoff = 22 Ohm CGE = 150 nF VGE = 15 V Tvj = 125 C L = 280 nH td(off) 10 35 Typical switching energies per pulse vs gate resistor 1 tf VCC = 3600 V IC = 500 A CGE = 150 nF VGE = 15 V Tvj = 125 C L = 280 nH td(on) tr 0.1 0.1 0 200 400 600 800 0 1000 Typical switching times vs collector current 6 5SNA 0500J650300 | Doc. No. 5SYA 1413-02 04-2012 5 10 15 20 RG [Ohm] IC [A] Fig. 7 25 10 100 td(on), tr, td(off), tf [s] 15 RG [ohm] IC [A] Fig. 8 Typical switching times vs gate resistor 25 30 35 20 100 Cies VCC = 3600 V 15 10 VCC = 4500 V VGE [V] C [nF] Coes Cres 10 1 5 VGE = 0V fOSC = 1MHz VOSC = 50mV IC = 500 A Tvj = 25 C 0.1 0 0 5 10 15 20 25 30 35 0 Fig. 9 Typical capacitances vs collector-emitter voltage Fig. 10 2.5 VCC 4400 V, Tvj = 125 C VGE = 15 V, RG = 22 Ohm, CGE = 150 nF 2 ICpulse / IC 1.5 1 0.5 Chip Module 0 0 1000 2000 3000 4000 5000 VCE [V] Fig. 11 1 2 3 Qg [C] VCE [V] Turn-off safe operating area (RBSOA) 7 5SNA 0500J650300 | Doc. No. 5SYA 1413-02 04-2012 6000 7000 Typical gate charge characteristics 4 5 3000 VCC = 3600 V VGE = 15 V RG = 3.9 Ohm CGE = 150 nF Tvj = 125 C L = 280 nH 500 500 RG = 3.9 Ohm Irr VCC = 3600 V IF = 500 A CGE = 150 nF Tvj = 125 C L = 280 nH 0 0 0 200 400 600 800 0 1000 1 2 3 di/dt [kA/s] IF [A] Fig. 12 RG = 8.2 Ohm Irr Qrr RG = 15 Ohm 1000 1000 RG = 33 Ohm Qrr 1500 RG = 4.7 ohm RG = 5.6 Ohm 1500 2000 RG = 3.3 Ohm Erec Erec Erec [mJ], Irr [A], Qrr [C] Erec [mJ], I rr [A], Qrr [C] 2500 2000 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 1000 VCC 4400 V di/dt 4 kA/s Tvj = 125 C L = 280 nH 1000 900 800 25 C 800 700 125 C IR [A] IF [A] 600 500 600 400 400 300 200 200 100 0 0 0 1 2 3 4 0 5 Fig. 14 Typicial diode forward characteristics chip level 8 5SNA 0500J650300 | Doc. No. 5SYA 1413-02 04-2012 1000 2000 3000 4000 5000 6000 7000 VR [V] VF [V] Fig. 15 Safe operating area diode (SOA) 0.1 Analytical function for transient thermal impedance: Z th(j-c) [K/W] IGBT, DIODE Z th(j-c) Diode n Z th(j-c) IGBT 0.01 R i (1 - e -t/ i ) Z th (j-c) (t) = IGBT i 1 i 1 2 Ri(K/kW) 12.75 2.99 i(ms) 151 5.84 Ri(K/kW) 25.5 6.3 i(ms) 144 5.83 3 4 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time Related documents: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2053 Applying IGBT 5SYA 2058 Surge currents for IGBT diodes 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded. 5SNA 0500J650300| Doc. No. 5SYA 1413-02 04-2012 DIODE 0.001