© Semiconductor Components Industries, LLC, 2018
July, 2019 − Rev. 1
1Publication Order Number:
NVHL072N65S3/D
NVHL072N65S3
MOSFET – Power,
N-Channel, SUPERFET) III,
Automotive, Easy-drive
650 V, 44 A, 72 mW
Description
SuperFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss provide superior switching performance, and with−
stand extreme dv/dt rate. Consequently, SuperFET III MOSFET
Easy−drive series helps manage EMI issues and allows for easier
design implementation.
Features
•AEC−Q101 Qualified
•Max Junction Temperature 150°C
•Typ. RDS(on) = 61 mΩ
•Ultra Low Gate Charge (Typ. QG = 82 nC)
•Low Effective Output Capacitance (Typ. COSS(eff.) = 724 pF)
•100% Avalanche Tested
•These Devices are Pb−Free and are RoHS Compliant
Typical Applications
•Automotive PHEV−BEV DC−DC Converter
•Automotive Onboard Charger for PHEV−BEV
TO−247−3LD
CASE 340CX
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
www.onsemi.com
N-Channel MOSFET
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
NVHL072N65S3 = Specific Device Code
$Y&Z&3&K
NVHL
072N65S3
BVDSS ID MAXRDS(on) MAX
650 V 44 A
72 mΩ V
D
G
S
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol Parameter Value Unit
VDSS Drain to Source Voltage 650 V
VGSS Gate to Source Voltage DC ±30 V
AC (f > 1 Hz) ±30 V
IDDrain Current Continuous (TC = 25°C) 44 A
Continuous (TC = 100°C) 28 A
IDM Pulsed Drain Current Pulsed (Note 1) 110 A
EAS Single Pulsed Avalanche Energy (Note 2) 214 mJ
EAR Repetitive Avalanche (Note 1) 3.12 mJ
dv/dt MOSFET dv/dt 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20 V/ns
PDPower Dissipation (TC = 25°C) 312 W
Derate Above 25°C 2.5 W/°C
TJ,TSTG Operating and Storage Temperature Range −55 to +150 °C
TLMaximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. IAS = 4.8 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD < 44 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RθJ CThermal Resistance, Junction to Case, Max 0.37 °C/W
RθJ AThermal Resistance, Junction to Ambient, Max 40 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Marking Package Packing Method Shipping (Qty / Packing)
NVHL072N65S3 NVHL072N65S3 TO−247−3LD Tube 30 Units / Tube
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25°C 650 − − V
VGS = 0 V, ID = 1 mA, TJ = 150°C 700 − − V
ΔBVDSS / ΔTJ Breakdown Voltage Temperature
Coefficient
ID = 1 mA, Referenced to 25°C−0.60 −V/°C
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V −0.30 1 μA
VDS = 520 V, VGS = 0 V, Tc = 125°C−7.30 −
IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1.0 mA 2.5 −4.5 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 22 A, TJ = 25°C−61 72 mΩ
VGS = 10 V, ID = 22 A, TJ = 100°C−107 −mΩ
gFS Forward Transconductance VDS = 20 V, ID = 44 A −29.7 −S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz −3300 −pF
Coss Output Capacitance −72.8 −pF
Crss Reverse Transfer Capacitance −14.6 −pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V −724 −pF
Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V −104 −pF
Qg(tot) Total Gate Charge VDS = 400 V, VGS = 10 V, ID = 44 A
(Note 4)
−82.0 −nC
Qgs Gate to Source Gate Charge −23.3 −nC
Qgd Gate to Drain “Miller” Charge −34.0 −nC
RGGate Resistance f = 1 MHz −0.685 −mΩ
SWITCHING CHARACTERISTICS
td(on) Turn−On Delay Time VDD = 400 V, ID = 44 A, VGS = 10 V,
RG = 4.7 Ω (Note 4)
−26.3 −ns
trTurn−On Rise Time −50 −ns
td(off) Turn−Off Delay Time −65.9 −ns
tfFall Time −32 −ns
DRAIN−SOURCE DIODE CHARACTERISTICS
ISMaximum Continuous Drain to Source Diode Forward Current − − 44 A
ISM Maximum Plused Drain to Source Diode Forward Current − − 110 A
VSD Drain to Source Diode Forward
Voltage
VGS = 0 V, ISD = 22 A − − 1.2 V
trr Reverse Recovery Time VGS = 0 V, ISD = 44 A dIF/dt = 100 A/μs−576 −nS
Qrr Reverse Recovery Charge −14.3 −μC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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TYPICAL CHARACTERISTICS
Figure 1. Saturation Characteristics Figure 2. Saturation Characteristics
ID, Drain Current (A)
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
VDS, Drain to Source Voltage (V)
0
30
60
90
012 3 45
0
10
20
30
40
Pulse Duration = 250 μs
TJ = 25°C
012 345
VGS
20 V Top
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Pulse Duration = 250 μs
TJ = 25°C
VGS
20 V Top
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Figure 3. Transfer Characteristic
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
1
10
100
23 45 6
Pulse Duration = 250 μs
Duty Cycle = 0.5% Max
VDS = 5 V
TJ = 25°C
TJ = −55°C
TJ = 150°C
78
Figure 4. On−Resistance Variation vs. Drain
Current and Gate Voltage
ID, Drain Current (A)
RSDS)ON), Drain−Source
On−Resistance (Ω)
0
0.05
0.10
0 20 40 60 100
TC = 25°C
VGS = 20 V
VGS = 10 V
0.15
80
Figure 5. Forward Diode Characteristics
IS, Reverse Drain Current (A)
VSD, Body Diode Forward Voltage (V)
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 150°C
TJ = 25°C
VGS = 0 V
0.01
0.001 TJ = −55°C
Figure 6. Capacitance vs. Drain to Source Volatage
Capacitance (pF)
VDS, Drain to Source Voltage (V)
10K
100K
0.1 1 10 100 1000
Ciss
Crss
Coss
f = 1 MHz
VGS = 0 V
1K
100
10
1
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TYPICAL CHARACTERISTICS (continued)
Figure 7. Gate Charge vs. Gate to Source Voltage
VGS, Gate to Source Voltage (V)
QG, Gate Charge (nC)
0
2
4
6
8
10
VDS = 400 V
VDS = 130 V
015304560 90
ID = 75 A
75
Figure 8. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Normalized Drain to Source
Breakdown Voltage
TJ, Junction Temperature (°C)
0.8
0.9
1.0
1.1
1.2
ID = 10 mA
−80 −40 0 40 80 120 160
Figure 9. Normalized RDSON vs. Junction
Temperature
Normalized Drain to Source
ON−Resistance
TJ, Junction Temperature (°C)
0
0.5
1.0
1.5
2.0
2.5
3.0
ID = 44 A
VGS = 10 V
−80 −40 0 40 80 120 160
Figure 10. Forward Bias Safe Operating Area
VDS, Drain−Source Voltage (V)
1 10 100 1000
0.1
1
10
100
ID, Drain Current (A)
Figure 11. Maximum Continuous Drain Current
vs. Case Temperature
ID, Drain Current (A)
TC, Case Temperature (°C)
0
10
40
50
60
25 50 75 100 125 150
30
20
Figure 12. EOSS vs. Drain to Source Voltage
EOSS (μJ)
VDS, Drain to Source Voltage (V)
0
2
4
6
8
10
12
14
16
18
20
0 100 300 400 500 700
200 600
Single Pulse
TJ = 150°C
TC = 25°C
Operation in this Area
is Limited by RDS(on)
DC
10 ms
1 ms
100 us
10 us
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TYPICAL CHARACTERISTICS (continued)
Figure 13. Normalized Power Dissipation vs. Case
Temperature
Figure 14. Peak Current Capability
Power Dissipation Multiplier
IDM, Peak Current (A)
t, Rectangular Pulse Duration (s)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
10
1000
TC, Case Temperature (°C)
0 25 50 75 100 125 150 0.00001 0.0001 0.001 0.01 0.1 1
100 Current Max Limited
Figure 15. EOSS vs. Drain to Source Voltage
VGS, Gate to Source Voltage (V)
0
50
100
150
200
250
689107
Figure 16. Normalized Gate Threshold Voltage
vs. Temperature
Normalized Gate Threshold Voltage
0.4
0.6
0.8
1.0
1.2
VGS = VDS
ID = 1 mA
TJ, Junction Temperature (°C)
−80 −40 0 40 80 120 160
RDS(on), On−Resistance (m)
Pulse Duration = 250 μs
Duty Cycle = 0.5% Max
ID = 44 A
TJ = 25°C
TJ = 150°C
Figure 17. Normalized Maximum Transient Thermal Impedance
0.00001 0.0001 0.001 0.1 1 10
0.001
0.1
1
10
PDM
t1
t2
Normalized Thermal Impedance, ZθJC
t, Rectangular Pulse Duration (s)
0.01 SINGLE PULSE
DUTY CYCLE − DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
ZJC(t) = r(t) x RJC
Peak TJ = PDM x ZJC(t) + TC
Duty Cycle, D = t1/t2
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