- 522 -
.062(1.58)
.050(1.27)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
.056(1.41)
.035(0.90)
.187(4.75)
.160(4.06)
.210(5.33)
.195(4.95)
.111(2.83)
.090(2.29)
.103(2.61)
.078(1.99)
EGF1A THRU EGF1M
1.0 AMP. Surface Mount Glass Passivated Junction High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
Features
Ideal for surface mount automotive applications
Glass passivated cavity-free junction
Easy pick and place
Capable of meeting enviromental standard of
MIL-S-19500
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Compete device submersible temperature of 265OC
for 10 sec in solder bath.
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.120 gram
SMA/DO-214AC
Dime n sions in in ches an d (millime t ers)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number Symbol EGF
1A EGF
1B EGF
1C EGF
1D EGF
1G EGF
1J EGF
1K EGF
1M Units
Maximum Recurrent Peak Reverse
Voltage VRRM 50 100 150 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 105 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 150 200 400 600 800 1000 V
Maximum Average Forward Rectified
Current @TL =125 I(AV) 1.0 A
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method ) IFSM 30 A
Maximum Instantaneous Forward Voltage
@ 1.0A VF 1.0 1.3 1.7 V
Maximum DC Reverse Current
@TA =25 at Rated DC Blocking Voltage
@ TA=125 IR 5
100 uA
uA
Maximum R everse R e covery Time
(Note 1 ) Trr 50 75 nS
Typical Junction Capacitance ( Note 2 ) Cj 15 pF
Typical Thermal Resistance (Note 3)
R
θ
JA
R
θ
JL 85.0
30.0 /W
Operating Temperature Range TJ -65 to +175
Storage Temperature Range TSTG -65 to +175
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1 .0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Thermal Resistance from Junction to Ambient and from Junction to Lead P.C.B. Mounted on
0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Areas.
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RATINGS AND CHARACTERISTIC CURVES (EGF1A THRU EGF1M)
AVERAGE FORWARD RECTIFIED CURRENT (A)
LEAD TEMPERATURE ( C)
O
Tj = 150 C
O
Tj=25 C
O
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
0 25 50 75 100 125 150 175
0
0.5
1.0
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.2- MAXIMUM NON-REPETITVE PEAK FORWARD
SURGE CURRENT
FIG.4- TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
FIG.5- TYPICAL JUNCTION CAPACITANCE FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
1 10 100
5.0
0
10
15
20
25
30
0.2 0.4 0.6 0.8 1.0 1.4 1.6 1.8
0.01
1.2
0.1
1
10
50
020
40 60 80 100
0.01
0.1
1
10
100
1000
100
10
1
0.1
0.1 1 10010
0
20
10
30
40
50
70
60
0.01 1 100100.1
REVERSE VOLTAGE (V) PULSE DURATION. SECRETARY (T)
INSTANTANEOUS FORWARD CURRENT (A)
PEAK FORWARD SURGE CURRENT (A)
TRANSIENT THERMAL IMPEDANCE ( )
OC/W
RESISTIVE OR INDUCTIVE LOAD
P.C.B. MOUNTED ON 0.2 X 0.2"
(5.0X5.0mm) COPPER PAD AREAS
8.3ms Single Half Sine Wave
(JEDEC Method)
Tj = Tj MAX
Tj = 150 C
O
Tj = 100 C
O
Tj=25 C
O
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
O
PULSE WIDTH-300 S
1% DUTY CYCLE
INSTANTANEOUS REVERSE LEAKAGE CURRENT (A)
JUNCTION CAPACITANCE (pF)