VRF191 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF191 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. T11 FEATURES * Improved Ruggedness V(BR)DSS = 270V min * 5:1 Load VSWR Capability at Specified Operating Conditions * 150W with 22dB Typical Gain @ 30MHz, 100V * Nitride Passivated * 150W with 14dB Typical Gain @ 150MHz, 100V * Refractory Gold Metallization * Excellent Stability & Low IMD * High Performance Flangeless Package * Common Source Configuration * RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25C unless otherwise specified Parameter Drain-Source Voltage VRF191 Unit 270 V Continuous Drain Current @ TC = 25C 12 A VGS Gate-Source Voltage 40 V PD Total Device dissipation @ TC = 25C 300 W TSTG TJ Storage Temperature Range -65 to 200 Operating Junction Temperature C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 270 280 VDS(ON) On State Drain Voltage (ID(ON) = 5A, VGS = 10V) 3.5 Max 5.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) 1.0 mA IGSS Gate-Source Leakage Current (VDS = 20V, VDS = 0V) 1.0 A gfs Forward Transconductance (VDS = 10V, ID = 5A) 4.0 6 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit mhos Thermal Characteristics Characteristic RJC Junction to Case Thermal Resistance RJS Junction to Sink (Use high efficiancy thermal joint compound and planar heat sink surface.) 0.35 .45 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com C/W 050-4960 Rev A 07-2010 Symbol Dynamic Characteristics Symbol VRF191 Parameter Test Conditions CISS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min Typ VGS = 0V 460 VDS = 100V 80 f = 1MHz 6 Max Unit pF Functional Characteristics Symbol Parameter GPS f1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 150W GPS f1 = 150MHz, VDD = 100V, IDQ = 250mA, Pout = 150W D f 1= 30MHz, VDD = 100V, IDQ = 250mA, Pout = 150W f1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 150W Phase Angles Min Typ 18 22 Max dB 14 50 5:1 VSWR - All % No Degradation in Output Power 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 14 20 10 8 6V 6 5.5V 4 5V 2 4.5V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 12 0 V 4 8 12 16 20 24 28 TJ= -55C 14 TJ= 25C 12 10 TJ= 125C 8 6 4 2 4V 0 250s PULSE TEST<0.5 % DUTY CYCLE 18 17V 13V 8V 0 32 0 , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics DS(ON) 30 1000 IDMax Ciss Crss 10 ID, DRAIN CURRENT (V) C, CAPACITANCE (pF) 10 100 Coss Rds(on) 1 PD Max TJ = 125C TC = 75C 050-4960 Rev A 07-2010 1 0 50 100 150 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage 0.1 1 Unit 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area Typical Performance Curves VRF191 0.35 D = 0.9 0.30 0.7 0.25 0.20 0.5 Note: 0.15 PDM ZJC, THERMAL IMPEDANCE (C/W) 0.40 0.3 0.10 t1 t2 t1 = Pulse Duration 0 t 0.1 0.05 0.05 10 -5 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC SINGLE PULSE 10 10-3 -4 10-2 10 -1 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 250 OUTPUT POWER (WPEP) Vdd=50V, Idq = 250mA, Freq=150MHz 200 100V 150 80V 100 50 0 0 1 2 3 4 5 Pout, INPUT POWER (WATTS PEP) Figure 6. POUT versus PIN 6 050-4944 Rev A 4-2008 150 MHz Test Circuit VRF191 30 MHz Test Circuit 30 MHz Test Circuit R1 Bias 0-12V + L1 R2 C6 C7 C9 C8 C10 + C5 C4 T2 R4 RF Output DUT C11 R3 RF Input + 100VDC C3 C2 C1 C1 -- 470 pF ATC 100B C2, C5 - C9 -- 0.1uF 100V C3 -- 180pF metal-clad mica C4 -- 33uF 35V Electrolytic C10 -- 10uF, 100V Electrolytic C11 -- 15pF, ATC 100B L1 -- 2 Ferrite beads, 2.0 uH R1, R2 -- 1k W 1/4W SMT R3 -- 3.3 W 1W SMT R4 -- 1k W 1/4W T1 -- 9:1 Transformer T2 -- 1:2 Transformer, 2t:3t DUT -- VRF191 T11 Package Outline 1.141 0.04 0.16 0.009 0.963 0.135 0.890 S D S 0.237 R0.125 0.507 0.257 0.980 D 0.125 R0.050 050-4944 Rev A 4-2008 S 0.100 x 4 G S 0.140 x 6 Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.