AON6504 30V N-Channel AlphaMOS General Description Product Summary * Latest Trench Power AlphaMOS (MOS LV) technology * Very Low RDS(on) at 4.5VGS * Low Gate Charge * High Current Capability * RoHS and Halogen-Free Compliant Application * DC/DC Converters in Computing, Servers, and POL * Isolated DC/DC Converters in Telecom and Industrial VDS ID (at VGS=10V) 30V 85A RDS(ON) (at VGS=10V) < 2.1m RDS(ON) (at VGS = 4.5V) < 3.2m 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current C C V A 322 51 IDSM TA=70C 20 66 IDM TA=25C Continuous Drain Current Units V 85 ID TC=100C Maximum 30 A 41 IAS 60 A Avalanche energy L=0.05mH C EAS 90 mJ VDS Spike VSPIKE 36 V Avalanche Current Power Dissipation B 100ns TC=25C PD TC=100C TA=25C Power Dissipation A Junction and Storage Temperature Range Rev.2.0: February 2014 7.3 Steady-State Steady-State RJA RJC W 4.7 TJ, TSTG Symbol t 10s W 33 PDSM TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 -55 to 150 Typ 14 40 1.1 www.aosmd.com C Max 17 55 1.5 Units C/W C/W C/W Page 1 of 6 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS, ID=250A 1 TJ=55C 5 1.3 VGS=10V, ID=20A 100 nA 2.1 V 1.75 2.1 2.55 3.15 3.2 Static Drain-Source On-Resistance VGS=4.5V, ID=20A 2.4 gFS Forward Transconductance VDS=5V, ID=20A 120 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz A 1.7 RDS(ON) TJ=125C Units V VDS=30V, VGS=0V IDSS Max m m S 1 V 85 A 2719 pF 1204 pF 169 pF 2.0 3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 44 60 nC Qg(4.5V) Total Gate Charge 21 28 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.9 Qgs Gate Source Charge Qgd Qgs Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=500A/s Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 42.7 nC 9 nC Gate Drain Charge 7 nC Gate Source Charge 9 nC 7 nC 9.7 ns Body Diode Reverse Recovery Time VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75, RGEN=3 5.2 ns 32.5 ns 10.3 ns 19.6 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: February 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V 3.5V VDS=5V 80 80 10V 60 ID(A) ID (A) 60 40 40 125C VGS=3V 20 20 25C 0 0 0 1 2 3 4 0 5 4 2 3 4 5 6 Normalized On-Resistance 1.6 3 RDS(ON) (m ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 2 1 VGS=10V 0 VGS=10V ID=20A 1.4 1.2 1 VGS=4.5V ID=20A 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 5 1.0E+02 ID=20A 1.0E+01 4 125C IS (A) RDS(ON) (m ) 1.0E+00 3 1.0E-01 125C 1.0E-02 2 1.0E-03 25C 1 25C 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: February 2014 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 Ciss 3000 Capacitance (pF) VGS (Volts) 3500 VDS=15V ID=20A 8 6 4 2500 2000 1500 1000 Coss 2 500 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 500 1000.0 10s 100s 10.0 1ms DC 1.0 TJ(Max)=150C TC=25C 0.1 400 10s Power (W) RDS(ON) limited 100.0 ID (Amps) Crss 0 TJ(Max)=150C TC=25C 17 5 2 10 300 200 100 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=1.5C/W PD 0.1 Single Pulse 7.3 4.7 Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: February 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 80 80 Current rating ID(A) 100 90 Power Dissipation (W) 100 70 60 50 40 30 70 60 50 40 30 20 20 10 10 0 0 0 25 50 75 100 125 TCASE ( C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE ( C) Figure 13: Current De-rating (Note F) 150 10000 TA=25C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=55C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: February 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.2.0: February 2014 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6