UT62L25616BSL-100L - Utron Technology, Inc.

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

1

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REVISION HISTORY

REVISION DESCRIPTION Draft Date

Preliminary Rev. 0.5 Original. Mar, 2001

Rev. 1.0 1. The symbols CE#,OE#,WE# are revised as.CE,OE,WE .

2. Separate Industrial and Consumer SPEC.

3. Add access time 55ns range.

4. The power supply is revised: 3.3V3.6V

Jul 4,2001

Rev. 1.1

1. Revised PIN CONFIGURATION

Rev 1.0 : No A17 pintyping error

Rev 1.1 : add A17 pin.

a、 TFBGA package :

ball D3 : NCA17

b、 TSOP-Ⅱ package :

pin18 : A16A17

pin19 : A15A16

pin20 : A14A15

pin21 : A13A14

pin22 : A12A13

pin23 : NCA12

Oct 18,2001

Rev. 1.2 1. Revised AC ELECTRICAL CHARACTERISTICS

tOH : 5ns10ns (Min.)

tBLZ : 0ns10ns (Min.)

2. Revised FUNCTIONAL BLOCK DIAGRAM

Mar 19,2002

Rev. 1.3

1. Revised DC ELECTRICAL CHARACTERISTICS：

Revised VIH as 2.2V

2. Revised 48-pin TFBGA package outline dimension：

a、 Rev. 1.2 : ball diameter=0.3mm

b、 Rev. 1.3 : ball diameter=0.35mm

Apr 17,2002

Rev. 1.4 1. Add under/overshoot range of VIL & VIH Nov 13,2002

Rev. 1.5

1. Revised Standby current (LL-Version) : 3uA(typ)2uA(typ)

2. Revised operating current (Iccmax) : 45/35/25mA40/30/25mA

3. Revised DC CHARACTERISTICS :

a. Operating Power Supply Current (Icc)

55ns (max) : 4540mA

70ns (typ) : 2520mA, 70ns (max) : 3530mA

100ns (Typ) : 2016mA

b. Standby current(CMOS) :

LL-version (typ) : 32uA, 2520uA

Dec 03,2002

Rev. 1.6

1. Revised VOH(Typ) : NA2.7V

2. Add VIH(max)=VCC+2.0V for pulse width less than 10ns.

V

IL(min)=VSS-2.0V for pulse width less than 10ns.

3. Add order information for lead free product

May 06,2003

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

2

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FEATURES



Fast access time : 55/70/100ns



CMOS Low power operating

Operating current : 40/30/25mA (Icc max.)

Standby current : 20uA (typ.) L-version

2uA (typ.) LL-version



Single 2.7V~3.6V power supply



Operating temperature:

Commercial : 0℃~70℃

Extended : -20℃~80℃



All TTL compatible inputs and outputs

 Fully static operation



Three state outputs



Data retention voltage : 1.5V (min)



Data byte control : LB (I/O1~I/O8)

UB(I/O9~I/O16)

 Package : 44-pin 400mil TSOPⅡ

48-pin 6mm × 8mm TFBGA

GENERAL DESCRIPTION

The UT62L25616 is a 4,19 4,304-bit low power CMOS

static random access memory organized as 262,144

words by 16 bits.

The UT62L25616 operates from a single 2.7V ~ 3.6V

power supply and all inputs and outputs are fully TTL

compatible.

The UT62L25616 is designed for low power system

applications. It is particularly suited for use in

high-density high-speed system applications.

FUNCTIONAL BLOCK DIAGRAM

DECODER

I/O DATA

CIRCUIT

CONTROL

CIRCUIT

256K

×

16

MEMORY

ARRAY

COLUMN I/O

A0-A17

Vcc

Vss

I/O1-I/O8

Lower Byte

CE

I/O9-I/O16

Upper Byte

UB

LB

OE

WE

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

3

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PIN CONFIGURATION

A1

A2

A3

A4

I/O16

I/O1

I/O2

I/O3

Vcc

Vss

A12

A17

I/O15

I/O13

I/O14

I/O12

Vss

Vcc

I/O11

I/O10

I/O4

I/O5

TSOP II

28

14

13

12

11

10

9

8

7

6

5

4

3

2

1

17

16

15

20

19

18

22 23

24

25

26

27

21

A16

A0

I/O7

I/O8

A5

A6

A7

A8

A9

I/O6

I/O9

A15

A14

A13

A10

NC

34

29

30

31

32

33

44

39

40

41

42

43

35

36

37

38

A11

OE

UB

LB

WE

CE

LB A0

OE A1 NCA2

I/O9 A3UB A4 I/O1CE

I/O10 A5I/O11 A6 I/O3I/O2

Vss A17I/O12 A7 VccI/O4

Vcc NCI/O13 A16 VssI/O5

I/O15 A14I/O14 A15 I/O7I/O6

I/O16 A12NC A13 I/O8WE

NC A9A8 A10 NCA11

123456

H

G

C

D

E

F

A

B

TFBGA

PIN DESCRIPTION

SYMBOL DESCRIPTION

A0 - A17 Address Inputs

I/O1 - I/O16 Data Inputs/Outputs

CE Chip Enable Input

WE Write Enable Input

OE Output Enable Input

LB Lower Byte Control

UB Upper Byte Control

VCC Power Supply

VSS Ground

NC No Connection

TRUTH TABLE

I/O OPERATION

MODE CE OE WE LB UB I/O1-I/O8 I/O9-I/O16

SUPPLY CURRENT

Standby H

X X

H X

H High – Z

High – Z High – Z

High – Z ISB, ISB1

Output Disable L

L H

H H

H L

X X

L High – Z

High – Z High – Z

High – Z ICC,ICC1,ICC2

Read L

L

H

L

H

L

H

L

DOUT

High – Z

DOUT

High – Z

DOUT

DOUT ICC,ICC1,ICC2

Write L

L

X

L

H

L

H

L

DIN

High – Z

DIN

High – Z

DIN

DIN ICC,ICC1,ICC2

Note: H = VIH, L=VIL, X = Don't care.

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919 4



ABSOLUTE MAXIMUM RATINGS*

PARAMETER SYMBOL RATING UNIT

Terminal Voltage with Respect to VSS V

TERM -0.5 to 4.6 V

Commercial TA 0 to 70 ℃

Operating Temperature Extended TA -20 to 80 ℃

Storage Temperature TSTG -65 to 150 ℃

Power Dissipation PD 1 W

DC Output Current IOUT 50 mA

Soldering Temperature (under 10 secs) Tsolder 260 ℃

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.

DC ELECTRICAL CHARACTERISTICS (VCC = 2.7V~3.6V, TA = 0℃ to 70℃ / -20℃ to 80℃(E))

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Power Voltage VCC 2.7 3.0 3.6 V

Input High Voltage VIH*1 2.2 - VCC+0.3 V

Input Low Voltage VIL*2 -0.2 - 0.6 V

Input Leakage Current ILI VSS ≦VIN ≦VCC - 1 - 1 µA

Output Leakage Current ILO VSS ≦VI/O ≦VCC; Output Disable - 1 - 1 µA

Output High Voltage VOH I

OH= -1mA 2.2 2.7 - V

Output Low Voltage VOL I

OL= 2.1mA - - 0.4 V

55 - 30 40 mA

70 - 20 30 mA

Operating Power

Supply Current ICC Cycle time=min, 100%duty

I/O=0mA, CE=VIL 100 - 16 25 mA

ICC1 Tcycle=

1µs - 4 5 mA

Average Operation

Current ICC2

100%duty,II/O=0mA,CE≦0.2V,

other pins at 0.2V or Vcc-0.2V Tcycle=

500ns - 8 10 mA

Standby Current (TTL) ISB CE=VIH, other pins =VIL or VIH - 0.3 0.5 mA

-L - 20 80 µA

Standby Current (CMOS) ISB1 CE=VCC-0.2V

other pins at 0.2V or Vcc-0.2V -LL - 2 20 µA

Notes:

1. Overshoot : Vcc+2.0v for pulse width less than 10ns.

2. Undershoot : Vss-2.0v for pulse width less than 10ns.

3. Overshoot and Undershoot are sampled, not 100% tested.

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919 5



CAPACITANCE (TA=25℃, f=1.0MHz)

PARAMETER SYMBOL MIN. MAX UNIT

Input Capacitance CIN - 6 pF

Input/Output Capacitance CI/O - 8 pF

Note : These parameters are guaranteed by device characterization, but not production tested.

AC TEST CONDITIONS

Input Pulse Levels 0V to 3.0V

Input Rise and Fall Times 5ns

Input and Output Timing Reference Levels 1.5V

Output Load CL = 30pF, IOH/IOL = -1mA / 2.1mA

AC ELECTRICAL CHARACTERISTICS (VCC =2.7V~3.6V, TA =0℃ to 70℃ / -20℃ to 80℃(E))

(1) READ CYCLE UT62L25616-55 UT62L25616-70 UT62L25616-100

PARAMETER SYMBOL

MIN. MAX. MIN. MAX. MIN. MAX.

UNIT

Read Cycle Time tRC 55 - 70 - 100 - ns

Address Access Time tAA - 55 - 70 - 100 ns

Chip Enable Access Time tACE - 55 - 70 - 100 ns

Output Enable Access Time tOE - 30 - 35 - 50 ns

Chip Enable to Output in Low Z tCLZ* 10 - 10 - 10 - ns

Output Enable to Output in Low Z tOLZ* 5 - 5 - 5 - ns

Chip Disable to Output in High Z tCHZ* - 20 - 25 - 30 ns

Output Disable to Output in High Z tOHZ* - 20 - 25 - 30 ns

Output Hold from Address Change tOH 10 - 10 - 10 - ns

LB ,UB Access Time tBA - 55 - 70 - 100 ns

LB ,UB to High-Z Output tBHZ - 25 - 30 - 40 ns

LB ,UB to Low-Z Output tBLZ 10 - 10 - 10 - ns

(2) WRITE CYCLE UT62L25616-55 UT62L25616-70 UT62L25616-100

PARAMETER SYMBOL MIN. MAX. MIN. MAX. MIN. MAX.

UNIT

Write Cycle Time tWC 55 - 70 - 100 - ns

Address Valid to End of Write tAW 50 - 60 - 80 - ns

Chip Enable to End of Write tCW 50 - 60 - 80 - ns

Address Set-up Time tAS 0 - 0 - 0 - ns

Write Pulse Width tWP 45 - 55 - 70 - ns

Write Recovery Time tWR 0 - 0 - 0 - ns

Data to Write Time Overlap tDW 25 - 30 - 40 - ns

Data Hold from End of Write Time tDH 0 - 0 - 0 - ns

Output Active from End of Write tOW* 5 - 5 - 5 - ns

Write to Output in High Z tWHZ* - 30 - 30 - 40 ns

LB ,UB Valid to End of Write tBW 45 - 60 - 80 - ns

*These parameters are guaranteed by device characterization, but not production tested.

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919 6



TIMING WAVEFORMS

READ CYCLE 1 (Address Controlled) (1,2) tRC

tAA

Data Valid

Address

Dout

tOH tOH

Previous data valid

READ CYCLE 2 (CEand OE Controlled) (1,3,4,5)

tRC

tAA

tACE

tBLZ

tOE tOHZ

tCLZ

tBHZ

tOH

tOLZ

High-Z D a ta Val id High-Z

tBA

tCHZ

Address

Dout

CE

L B , UB

OE

Notes :

1. WE is high for read cycle.

2.Device is continuously selectedOE =low,CE =low,LB orUB =low.

3.Address must be valid prior to or coincident withCE =low, LB orUB =low transition; otherwise tAA is the limiting parameter.

4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL=5pF. Transition is measured±500mV from steady state.

5.At any given temperature and voltage condition, tCHZ is less than tCLZ, tBHZ is less than tBLZ, tOHZ is less than tOLZ.

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919 7



WRITE CYCLE 1 (WE Controlled) (1,2,3,5,6)

tWC

tAW

tCW

tAS tWP

tBW

tWHZ tOW

tWR

High-Z

(4) (4)

Address

CE

WE

LB , U B

Dout

Din D a ta Valid

tDW tDH

WRITE CYCLE 2 (CE Controlled) (1,2,5,6) tWC

tAW

tCW

tAS tWR

tWP

tBW

tWHZ

tDW tDH

D ata V alid

High-Z

(4)

Address

CE

WE

LB , U B

Dout

Din

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919 8



WRITE CYCLE 3 (LB ,UBControlled) (1,2,5,6) tWC

tAW

tAS tWRtCW

tWP

tBW

tWHZ

tDW tDH

D ata Valid

Address

CE

WE

LB , UB

Dout

Din

High-Z

Notes :

1. WE ,CE ,LB ,UB must be high during all address transitions.

2.A write occurs during the overlap of a lowCE , low WE ,LB orUB =low.

3.During a WE controlled write cycle withOE low, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and data to be placed

on the bus.

4.During this period, I/O pins are in the output state, and input signals must not be applied.

5.If theCE ,LB ,UB low transition occurs simultaneously with or after WE low transition, the outputs remain in a high impedance state.

6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919 9



DATA RETENTION CHARACTERISTICS (TA = 0℃ to 70℃ / -20℃ to 80℃(E))

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Vcc for Data Retention

VDR CE ≧ V

CC-0.2V 1.5 - 3.6 V

- L - 1 50 µA

Data Retention Current IDR Vcc=1.5V

CE ≧ V

CC-0.2V - LL - 0.5 20 µA

Chip Disable to Data

Retention Time tCDR See Data Retention

Waveforms (below) 0 - - ms

Recovery Time

t

R 5 - - ms

DATA RETENTION WAVEFORM

Low Vcc Data Retention Waveform (1) (CE controlled)

VDR ≧ 1.5V

CE ≧ VCC-0.2V

Vcc(min.) Vcc(min.)

VIH VIH

VCC

tR

tCDR

CE

Low Vcc Data Retention Waveform (2) (LB ,UB controlled)

VDR ≧ 1.5V

LB,UB ≧ VCC-0.2V

Vcc(min.) Vcc(min.)

VIH VIH

VCC

tR

tCDR

LB,UB

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919 10



PACKAGE OUTLINE DIMENSION

44-pin 400mil TSOP-Ⅱ Package Outline Dimension

θ

DIMENSIONS IN MILLMETERS DIMENSIONS IN INCHS

SYMBOLS MIN. NOM. MAX. MIN. NOM. MAX.

A 1.00 - 1.20 0.039 - 0.047

A1 0.05 - 0.15 0.002 - 0.006

A2 0.95 1.00 1.05 0.037 0.039 0.041

b 0.30 0.35 0.45 0.012 0.014 0.018

c 0.12 - 0.21 0.0047 - 0.083

D 18.313 18.415 18.517 0.721 0.725 0.728

E 11.854 11.836 11.838 0.460 0.466 0.470

E1 10.058 10.180 10.282 0.398 0.400 0.404

e - 0.800 - - 0.0315 -

L 0.40 0.50 0.60 0.0157 0.020 0.0236

2D - 0.805 - - 0.0317 -

y 0.00 - 0.076 0.000 - 0.003

Θ 0

o - 5o 0

o - 5o

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919 11



48-pin 6mm × 8mm TFBGA Package Outline Dimension

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919 12



ORDERING INFORMATION

COMMERCIAL TEMPERATURE

PART NO. ACCESS TIME

(ns) STANDBY CURRENT

(µA) typ. PACKAGE

UT62L25616MC-55L 55 20

44 PIN TSOP-Ⅱ

UT62L25616MC-55LL 55 2

44 PIN TSOP-Ⅱ

UT62L25616MC-70L 70 20

44 PIN TSOP-Ⅱ

UT62L25616MC-70LL 70 2

44 PIN TSOP-Ⅱ

UT62L25616MC-100L 100 20

44 PIN TSOP-Ⅱ

UT62L25616MC-100LL 100 2

44 PIN TSOP-Ⅱ

UT62L25616BS-55L 55 20 48 PIN TFBGA

UT62L25616BS-55LL 55 2 48 PIN TFBGA

UT62L25616BS-70L 70 20 48 PIN TFBGA

UT62L25616BS-70LL 70 2 48 PIN TFBGA

UT62L25616BS-100L 100 20 48 PIN TFBGA

UT62L25616BS-100LL 100 2 48 PIN TFBGA

EXTENDED TEMPERATURE

PART NO. ACCESS TIME

(ns) STANDBY CURRENT

(µA) typ. PACKAGE

UT62L25616MC-55LE 55 20

44 PIN TSOP-Ⅱ

UT62L25616MC-55LLE 55 2

44 PIN TSOP-Ⅱ

UT62L25616MC-70LE 70 20

44 PIN TSOP-Ⅱ

UT62L25616MC-70LLE 70 2

44 PIN TSOP-Ⅱ

UT62L25616MC-100LE 100 20

44 PIN TSOP-Ⅱ

UT62L25616MC-100LLE 100 2 44 PIN TSOP-Ⅱ

UT62L25616BS-55LE 55 20 48 PIN TFBGA

UT62L25616BS-55LLE 55 2 48 PIN TFBGA

UT62L25616BS-70LE 70 20 48 PIN TFBGA

UT62L25616BS-70LLE 70 2 48 PIN TFBGA

UT62L25616BS-100LE 100 20 48 PIN TFBGA

UT62L25616BS-100LLE 100 2 48 PIN TFBGA

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919 13



ORDERING INFORMATION (for lead free product)

COMMERCIAL TEMPERATURE

PART NO. ACCESS TIME

(ns) STANDBY CURRENT

(µA) typ. PACKAGE

UT62L25616MCL-55L 55 20

44 PIN TSOP-Ⅱ

UT62L25616MCL-55LL 55 2

44 PIN TSOP-Ⅱ

UT62L25616MCL-70L 70 20

44 PIN TSOP-Ⅱ

UT62L25616MCL-70LL 70 2

44 PIN TSOP-Ⅱ

UT62L25616MCL-100L 100 20

44 PIN TSOP-Ⅱ

UT62L25616MCL-100LL 100 2

44 PIN TSOP-Ⅱ

UT62L25616BSL-55L 55 20 48 PIN TFBGA

UT62L25616BSL-55LL 55 2 48 PIN TFBGA

UT62L25616BSL-70L 70 20 48 PIN TFBGA

UT62L25616BSL-70LL 70 2 48 PIN TFBGA

UT62L25616BSL-100L 100 20 48 PIN TFBGA

UT62L25616BSL-100LL 100 2 48 PIN TFBGA

EXTENDED TEMPERATURE

PART NO. ACCESS TIME

(ns) STANDBY CURRENT

(µA) typ. PACKAGE

UT62L25616MCL-55LE 55 20

44 PIN TSOP-Ⅱ

UT62L25616MCL-55LLE 55 2

44 PIN TSOP-Ⅱ

UT62L25616MCL-70LE 70 20

44 PIN TSOP-Ⅱ

UT62L25616MCL-70LLE 70 2

44 PIN TSOP-Ⅱ

UT62L25616MCL-100LE 100 20 44 PIN TSOP-Ⅱ

UT62L25616MCL-100LLE 100 2 44 PIN TSOP-Ⅱ

UT62L25616BSL-55LE 55 20 48 PIN TFBGA

UT62L25616BSL-55LLE 55 2 48 PIN TFBGA

UT62L25616BSL-70LE 70 20 48 PIN TFBGA

UT62L25616BSL-70LLE 70 2 48 PIN TFBGA

UT62L25616BSL-100LE 100 20 48 PIN TFBGA

UT62L25616BSL-100LLE 100 2 48 PIN TFBGA

UTRON UT62L25616

Rev. 1.6 256K X 16 BIT LOW POWER CMOS SRAM

UTRON TECHNOLOGY INC. P80055

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919 14

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