07/2014
AWT6651
AWT6651
High Efciency ProEcientTM
UMTS2100 (Band 1)
LTE/WCDMA/TD-SCDMA Linear PAM
DATA SHEET - Rev 2.3
10 Pin 3 mm x 3 mm x 0.9 mm
Surface Mount Module
Figure 1: Block Diagram
FEATURES
WCDMA/HSPA, LTE and TD-SCDMA Compliant
High Efciency (R99 waveform):
• 48% @ POUT = +28.5 dBm
• 25% @ POUT = +17 dBm in LPM, without DC/
DC Converter
Simple Calibration with only 2 Bias Modes
• Optimized for SMPS Supply
Low Leakage Current in Shutdown Mode: <5 µA
Internal Voltage Regulator
Integrated “daisy chainable” directional couplers
with CPLIN and CPLOUT Ports
Optimized for a 50 System
Internal DC blocks on IN/OUT RF ports
1.8 V Control Logic
RoHS Compliant Package, 260 oC MSL-3
APPLICATIONS
Wireless Handsets and Data Devices for:
WCDMA/HSPA/LTE IMT-Band
TD-SCDMA 1.8/2.0 GHz Band
TD-LTE Bands 33, 34, 39
PRODUCT DESCRIPTION
The AWT6651 PA is designed to provide highly linear
output for WCDMA, LTE and TD-SCDMA handsets
and data devices with high efciency at both high and
low power modes. This ProEcientTM PA can be used
with an external switch mode power supply (SMPS) to
improve its efciency and reduce current consumption
further at medium and low output powers. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. There are two
selectable bias modes that optimize efciency for
different output power levels, and a shutdown mode
with low leakage current, which increases handset talk
and standby time. The self-contained 3 mm x 3 mm x
0.9 mm surface mount package incorporates matching
networks optimized for output power, efciency, and
linearity in a 50 system.
1
2
3
4
5
10
9
8
7
6
V
BATT
RFIN
VMODE2 (N/C)
VMODE1
VEN CPLOUT
GND
CPLIN
RFOUT
VCC
Bias Control
Voltage Regulation
CPL
GND at Slug (pad)
2DATA SHEET - Rev 2.3
07/2014
AWT6651
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
V
BATT
RF
IN
N/C
V
MODE1
V
EN
1
2
3
4
56
7
8
9
10
CPL
OUT
GND
CPL
IN
RF
OUT
V
CC
1
2
3
4
56
7
8
9
10
PINNAME DESCRIPTION
1V
BATT
Battery Voltage
2RF
IN
RF Input
3N/C No Connection
4V
MODE1
Mode Control Voltage 1
5V
EN
PA Enable Voltage
6
7GND Ground
8
9RF
OUT
RF Output
10 V
CC
Supply Voltage
CPLOUT
CPLIN
Coupler Output
Coupler Input
3DATA SHEET - Rev 2.3
07/2014
AWT6651
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Functional operation to the specied performance is not implied under these conditions.
Operation of any single parameter in excess of the absolute ratings may cause permanent
damage. No damage occurs if one parameter is set at the limit while all other parameters
are set within normal operating ranges.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions dened in the electrical specications.
Notes:
(1) For operation at Vcc = +3.1 V, Pout is derated by 0.8 dB.
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency (f)
1920
1880
2010
-
-
-
1980
1920
2025
MHz
UMTS Band 1
TD-SCDMA Band
TD-SCDMA Band
Supply Voltage (VCC) +0.5 +3.4 +4.4 V POUT < +28.5 dBm
Battery Voltage (VBATT) +3.1 +3.4 +4.4 V POUT < +28.5 dBm
Enable Voltage (VENABLE)+1.35
0
+1.8
0
+3.1
+0.5 VPA “on”
PA “shut down”
Mode Control Voltage (VMODE1)+1.35
0
+1.8
0
+3.1
+0.5 VLow Bias Mode
High Bias Mode
RF Output Power (POUT) (1)
R99 WCDMA, HPM
HSPA (MPR = 0), HPM
LTE, HPM
R99 WCDMA, LPM
HSPA (MPR = 0), LPM
LTE, LPM
27.7
26.45
26.45
16.2
15.2
15.2
28.5
27.25
27.25
17
16
16
28.5
27.25
27.25
17
16
16
dBm
3GPP TS 34.121-1, Rel 8
Table C.11.1.3, for WCDMA
Subtest 1
TS 36.101 Rel 8 for LTE
RF Output Power (POUT) (1)
TD-SCDMA (HPM)
TD-SCDMA (LPM)
26.7
15.7
27.5
16.5
27.5
16.5 dBm 3GPP TS 25.62
Section 6.2.1
Case Temperature (TC) -30 -+90 °C
PARAMETER MIN TYP MAX UNIT
RF Input (PIN)- 0 10 dBm
VCC 03.4 5 V
VBATT 03.4 6 V
Control Voltage (VENABLE, VMODE)01.8 3.5 V
Storage Temperature (TSTORAGE)-40 25 150 °C
4DATA SHEET - Rev 2.3
07/2014
AWT6651
Table 4: Electrical Specications - WCDMA Operation (R99 waveform)
(TC = +25 °C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 system, unless otherwise specied)
Notes:
(1) ACLR and Efciency measured at 1950 MHz.
(2) Noise measured at 2110 MHz to 2170 MHz.
PARAMETER MIN TYP MAX UNIT COMMENTS
POUT VCC VMODE1
Gain
24.5
-
12
27
20
15
30
-
17.5
dB
+28.5 dBm
+17 dBm
+17 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
ACLR1 at 5 MHz offset (1)
-
-
-
-40
-40
-42
-36
-36
-36
dBc
+28.5 dBm
+17 dBm
+17 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
ACLR2 at 10 MHz offset (1)
-
-
-
-52
-55
-55
-47
-47
-47
dBc
+28.5 dBm
+17 dBm
+17 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
Power-Added Efciency (1)
43
20
17
48
25
23
-
-
-
%
+28.5 dBm
+17 dBm
+17 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
Quiescent Current (Icq)
Low Bias Mode - 17 - mA through VCC pin, VMODE1 = +1.8 V
Mode Control Current -0.1 -mA through VMODE pin, VMODE1 = 1.8 V
Enable Current -0.1 -mA through VENABLE pin
BATT Current -2.5 -mA through VBATT pin, VMODE1 = +1.8 V
Leakage Current - 4 10 µA VBATT = +4.4 V, VCC = +4.4 V
VENABLE = 0 V, VMODE1 = 0 V
Noise in Receive Band (2) -
-
-135
-140
-
-dBm/Hz POUT < +28.5 dBm, VMODE1 = 0 V
POUT < 17 dBm, VMODE1 = +1.8 V
Harmonics
2fO
3fO, 4fO
-
-
-43
-55
-
-dBc POUT < +28.5 dBm
Input Impedance - - 2:1 VSWR
Coupling Factor 18 20 23 dB
Directivity - 20 - dB
Coupler IN-OUT
Daisy Chain Insertion Loss -<0.25 -dB
698 to 2620 MHz
Pin 8 to 6
Shutdown Mode
Spurious Output Level
(all suprious outputs) - - -70 dBc
POUT < +28.5 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Load mismatch stress with no
permanent degradation or failure 8:1 - - VSWR Applies over full operating range
Phase Delta (HPM-LPM) - 10 - Deg
5DATA SHEET - Rev 2.3
07/2014
AWT6651
Table 5: Electrical Specications - LTE Operation (RB = 12, START = 0, QPSK)
(TC = +25 °C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 system, unless otherwise specied)
PARAMETER MIN TYP MAX UNIT COMMENTS
POUT VCC VMODE1
Gain
24.5
-
12
27
20
15
30
-
17.5
dB
+27.25 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
ACLR E-UTRA (1)
at ± 10 MHz offset
-
-
-
-38
-38
-38
-34
-34
-34
dBc
+27.25 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
ACLR1 UTRA (1)
at ± 7.5 MHz offset
-
-
-
-39
-39
-39
-36
-36
-36
dBc
+27.25 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
ACLR2 UTRA (1)
at ± 12.5 MHz offset
-
-
-
-60
-60
-60
-48
-48
-48
dBc
+27.25 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
Power-Added Efciency (1)
-
-
-
41
20
19
-
-
-
%
+27.25 dBm
+16 dBm
+16 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
Noise emissions B34 --38 -dBm/MHz
2010 - 2025 MHz, 100 RB QPSK
LTE signal centered at 1970 MHz at
LTE max power
LTE NS_05 PHS emissions - -48 - dBm/
300 kHz 1884.5 - 1919.6 MHz
Spurious Output Level
(all spurious outputs) - - <-70 dBc
POUT < +27.25 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Load mismatch stress with
no permanent degradation or
failure
8:1 - - VSWR Applies over full operating range
Notes:
(1) ACLR and Efciency measured at 1950 MHz.
6DATA SHEET - Rev 2.3
07/2014
AWT6651
Table 6: Electrical Specications - TD-SCDMA Operation
(TC = +25 °C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 system, unless otherwise specied)
PARAMETER MIN TYP MAX UNIT COMMENTS
POUT VCC VMODE1
Gain
24.5
-
12
27
20
15
30
-
17.5
dB
+27.5 dBm
+16.5 dBm
+16.5 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
ACLR1 at 1.6 MHz offset
-
-
-
-42
-42
-46
-36
-36
-36
dBc
+27.5 dBm
+16.5 dBm
+16.5 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
ACLR2 at 3.2 MHz offset
-
-
-
-55
-55
-64
-48
-48
-48
dBc
+27.5 dBm
+16.5 dBm
+16.5 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
Power-Added Efciency
35
15
15
42
20
19
-
-
-
%
+27.5 dBm
+16.5 dBm
+16.5 dBm
3.4 V
1.5 V
3.4 V
0 V
0 V
1.8 V
Quiescent Current (Icq)
Low Bias Mode - 20 - mA VMODE1 = +1.8 V
Mode Control Current -0.1 -mA through VMODE pin, VMODE1 = +1.8 V
Enable Current -0.1 -mA through VENABLE pin, VEN = +1.8 V
BATT Current -2.5 -mA through VBATT pin, VMODE1 = +1.8 V
Leakage Current -<5 10 µAVBATT = +4.4 V, VCC = +4.4 V,
VENABLE = 0 V, VMODE1 = 0 V
Harmonics
2fO
3fO, 4fO
-
-
-43
-55
-
-dBc POUT < +27.5 dBm
Input Impedance - - 2:1 VSWR
Load mismatch stress with
no permanent degradation or
failure
8:1 - - VSWR Applies over full operating range
7DATA SHEET - Rev 2.3
07/2014
AWT6651
Table 7: Electrical Specications - TD-LTE Operation, Band 39 (10 MHz QPSK, 12 RB, Start = 0)
(TC = +25 °C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system)
Notes:
(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.
(2) ACLR and Efciency measured at 1900 MHz.
PARAMETER MIN TYP MAX UNITS COMMENTS
Operating Frequency (f) 1900
1880
-
-
1920
1920 MHz UMTS Band 33
UMTS Band 39
RF Output Power (Pmax) (1)
LTE (MPR = 0), HPM
LTE (MPR = 0), LPM
26
15.5
27
16
27
16 dBm TS 36.101 Rel 8 for LTE
Gain 24.5
12
27
15
30
17.5 dB HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
LTE to LTE, E-UTRA (2) -
-
-37
-40
-36
-36 dBc HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
UTRA ACLR1 (2) -
-
-38
-40
-36
-36 dBc HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
UTRA ACLR2 (2) -
-
-60
-60
-42
-42 dBc HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Power-Added Efciency (2) -
-
34
22
-
-%HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Quiescent Current (Icq)
Low Bias Mode - 8 - mA through VCC pin
Harmonics
2fO
3fO, 4fO
-
-
-
-
-35
-50 dBc POUT +27 dBm
Spurious Output Level
(all spurious outputs) - - -70 dBc
POUT +27 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Load mismatch stress with
no permanent degradation or
failure
8:1 - - VSWR Applies over full operating range
8DATA SHEET - Rev 2.3
07/2014
AWT6651
Table 8: Electrical Specications - TD-LTE Operation, Band 34 (10 MHz QPSK, 12 RB, Start = 0)
(TC = +25 °C, VCC = VBATT = +3.4 V, VEN = 0 V, 50 Ω system)
Notes:
(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.
(2) ACLR and Efciency measured at 2017.5 MHz.
PARAMETER MIN TYP MAX UNITS COMMENTS
Operating Frequency (f) 2010 - 2025 MHz Band 34
RF Output Power (Pmax) (1)
LTE (MPR = 0), HPM
LTE (MPR = 0), LPM
25
15.5
26
16
26
16 dBm TS 36.101 Rel 8 for LTE
Gain 24.5
12
27
15
30
17.5 dB HPM, POUT = 26 dBm
LPM, POUT = 16 dBm
LTE to LTE, E-UTRA (2) -
-
-38
-38
-36
-36 dBc HPM, POUT = 26 dBm
LPM, POUT = 16 dBm
UTRA ACLR1 (2) -
-
-39
-38
-36
-36 dBc HPM, POUT = 26 dBm
LPM, POUT = 16 dBm
UTRA ACLR2 (2) -
-
-62
-60
-42
-42 dBc HPM, POUT = 26 dBm
LPM, POUT = 16 dBm
Power-Added Efciency (2) -
-
35
23
-
-%HPM, POUT = 26 dBm
LPM, POUT = 16 dBm
Quiescent Current (Icq)
Low Bias Mode - 8 - mA through VCC pin
Harmonics
2fO
3fO, 4fO
-
-
-
-
-35
-50 dBc POUT +26 dBm
Spurious Output Level
(all spurious outputs) - - -70 dBc
POUT +26 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Load mismatch stress with
no permanent degradation or
failure
8:1 - - VSWR Applies over full operating range
9DATA SHEET - Rev 2.3
07/2014
AWT6651
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VENABLE and VMODE1 voltages.
Bias Modes
The power amplier may be placed in either a Low Bias
mode or a High Bias mode by applying the appropriate
logic level (see Operating Ranges table) to VMODE1.
The Bias Control table lists the recommended modes
of operation for various applications. VMODE2 is not
necessary for this PA.
Two operating modes are available to optimize current
consumption. High Bias/High Power operating mode
is for POUT levels > 16 dBm. At around 17 dBm output
power, the PA should be “Mode Switched” to Low power
mode for lowest quiescent current consumption.
Figure 3: Recommended ON/OFF Timing Sequence
VEN
VCC
note 1
RF
IN
notes 1,2
OFF Sequence
Referenced After 90% of Rise
Time Referenced Before 10% of Fall
Time
ON Sequence
On Sequence Start
T_0N =
T_0N+1µS T_0N+3 µS
Off Sequence Start
T_ 0FF =
T_0FF+ST_0 FF+3 µS
Vcontrols
Venable/Vmode(s)
Rise/Fall Max 1µS
Defined at 10% to 90%
of Min/Max Voltage
Notes:
(1) Level might be changed after RF is ON.
(2) RF OFF dened as PIN ≤ -30 dBm.
(3) Switching simultaneously between VMODE and VEN is not recommended.
10 DATA SHEET - Rev 2.3
07/2014
AWT6651
Table 9: Bias Control (WCDMA and LTE)
Table 10: Bias Control (TD-SCDMA)
APPLICATION POUT
LEVELS BIAS MODE VENABLE VMODE1 VCC VB AT T
High power
(High Bias Mode) > +16 dBm High +1.8 V 0 V 1.5 - 4.35 V > 3.1 V
Med/low power
(Low Bias Mode) +17 dBm Low +1.8 V +1.8 V 0.5 - 4.35 V > 3.1 V
Shutdown -Shutdown 0 V 0 V 0.5 - 4.35 V > 3.1 V
APPLICATIONP
OUT
LEVELSBIAS MODE V
ENABLE
V
MODE1
V
CC
V
BATT
TD-SCDMA - high power
(High Bias Mode) > +15 dBmHigh+1.8 V0 V1.5 - 4.35 V> 3.1 V
TD-SCDMA - med/low
power (Low Bias Mode) +16 dBmLow+1.8 V+1.8 V0.5 - 4.35 V> 3.1 V
Shutdown -Shutdown0 V0 V0.5 - 4.35 V> 3.1 V
11 DATA SHEET - Rev 2.3
07/2014
AWT6651
Figure 4: Evaluation Board Schematic
Figure 5: Evaluation Board Layout
C4
2.2µF ceramic
RF
IN
1
6
7
10
8
5
4
3
VBATT
VMODE1
RF
OUT
RFIN
GND
VCC
VEN CPL
OUT
VCC
C1
VBATT
VMODE1
V
EN
29
N/C
C2
2.2 µF
C3
0.1µF
GND at slug
CPL
IN
RF
OUT
33pF
VMODE2
CPL
IN
CPL
OUT
GND
GND
CPLOUT
VBATT
VCC
C3
C4
C2
C1
VEN
RFIN
VMODE1
RFOUT
CPLIN
GND
GND
VMODE2
12 DATA SHEET - Rev 2.3
07/2014
AWT6651
ProEcientTM
The AWT6651 power amplier module is based on
ANADIGICS proprietary ProEcient™ technology.
The PA is designed to operate up to 17 dBm in the low
power mode, thus eliminating the need for three gain
states, while still maintaining low quiescent current
and high efciency in low and medium power levels.
Average weighted efciency can be increased by
using an external switch mode power supply (SMPS)
or DC/DC converter to reduce VCC.
The directional “daisy chainable” coupler is integrated
within the PA module, therefore there is no need for
external couplers.
Figure 6: Typical Application Circuit
The AWT6651 has an integrated voltage regulator,
which eliminates the need for an external constant
voltage source. The PA is turn on/off is controlled
by VEN pin. A single VMODE control logic (VMODE1) is
needed to operate this device. AWT6651 requires
only two calibration sweeps for system calibration,
thus saving calibration time.
Figure 6 shows one application example on mobile
board. C1, C2 and C4 are RF bypass caps and should
be placed nearby pin 1 and pin 10. RF Bypassing
is used to optimize unwanted out of band (OOB)
emissions and reduce OOB gain.
VBATT
RFIN
VMODE2
VMODE1
VEN
RFOUT
GND
VCC
1 C2
RFOUT
TX filter
PA_R0
PA_0N
C5
C4
BB
GND
at slug
RFIN
50ǡ
GND
GND
GND
GND
GND
C
Duplexer
VBATT
SMPS
C6
GNDGND
C3
Input
Matching
Output
Matching
CPLIN
CPLOUT
Optional jumper for non-APT
application
To
Detector
13 DATA SHEET - Rev 2.3
07/2014
AWT6651
Figure 7: Package Outline - 10 Pin 3 mm x 3 mm x 0.9 mm Surface Mount Module
Figure 8: Branding Specication
PACKAGE OUTLINE
6651
LLLLNN
YYWWCC
Pin 1 Identifier
Part Number
Date Code
YY=Year; WW=Work week Country Code (CC)
Lot Number
14 DATA SHEET - Rev 2.3
07/2014
AWT6651
Figure 9: Recommended PCB Layout Information
PCB AND STENCIL DESIGN GUIDELINE
15 DATA SHEET - Rev 2.3
07/2014
AWT6651
COMPONENT PACKAGING
Figure 10: Carrier Tape
Pin 1
Figure 11: Reel
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
DATA SHEET - Rev 2.3
07/2014
16
AWT6651
ORDERING INFORMATION
ORDER NUMBERTEMPERAT URE
RANGE
PACKAGE
DESCRIPTIONCOMPONENT PACKAGING
AWT6651Q7-30
o
C to +90
o
C
RoHS Compliant 10 Pin
3 mm x 3 mm x 0.9 mm
Surface Mount Module
Tape and Reel, 2500 pieces per Reel
AWT6651P9-30
o
C to +90
o
C
RoHS Compliant 10 Pin
3 mm x 3 mm x 0.9 mm
Surface Mount Module
Partial Tape and Reel