07/2014
AWT6651
AWT6651
High Efciency ProEcientTM
UMTS2100 (Band 1)
LTE/WCDMA/TD-SCDMA Linear PAM
DATA SHEET - Rev 2.3
10 Pin 3 mm x 3 mm x 0.9 mm
Surface Mount Module
Figure 1: Block Diagram
FEATURES
• WCDMA/HSPA, LTE and TD-SCDMA Compliant
• High Efciency (R99 waveform):
• 48% @ POUT = +28.5 dBm
• 25% @ POUT = +17 dBm in LPM, without DC/
DC Converter
• Simple Calibration with only 2 Bias Modes
• Optimized for SMPS Supply
• Low Leakage Current in Shutdown Mode: <5 µA
• Internal Voltage Regulator
• Integrated “daisy chainable” directional couplers
with CPLIN and CPLOUT Ports
• Optimized for a 50 Ω System
• Internal DC blocks on IN/OUT RF ports
• 1.8 V Control Logic
• RoHS Compliant Package, 260 oC MSL-3
APPLICATIONS
• Wireless Handsets and Data Devices for:
• WCDMA/HSPA/LTE IMT-Band
• TD-SCDMA 1.8/2.0 GHz Band
• TD-LTE Bands 33, 34, 39
PRODUCT DESCRIPTION
The AWT6651 PA is designed to provide highly linear
output for WCDMA, LTE and TD-SCDMA handsets
and data devices with high efciency at both high and
low power modes. This ProEcientTM PA can be used
with an external switch mode power supply (SMPS) to
improve its efciency and reduce current consumption
further at medium and low output powers. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. There are two
selectable bias modes that optimize efciency for
different output power levels, and a shutdown mode
with low leakage current, which increases handset talk
and standby time. The self-contained 3 mm x 3 mm x
0.9 mm surface mount package incorporates matching
networks optimized for output power, efciency, and
linearity in a 50 Ω system.
1
2
3
4
5
10
9
8
7
6
V
BATT
RFIN
VMODE2 (N/C)
VMODE1
VEN CPLOUT
GND
CPLIN
RFOUT
VCC
Bias Control
Voltage Regulation
CPL
GND at Slug (pad)