MMBT4401L-AE3-R - Unisonic Technologies Co., Ltd.

UNISONIC TECHNOLOGIES CO., LTD

MMBT4401 NPN SILICON TRANSISTOR

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NPN GENERAL PURPOSE

AMPLIFIER

 DESCRIPTION

The UTC MMBT4401 is designed for use as a medium power

amplifier and switch requiring collector currents up to 500mA.

SOT-323

1

2

3

SOT-23

1

2

3

 ORDERING INFORMATION

Ordering Number Pin Assignment

Normal Lead Free Halogen Free Package 1 2 3 Packing

MMBT4401-AE3-R MMBT4401L-AE3-R MMBT4401G-AE3-R SOT-23 E B C Tape Reel

MMBT4401-AL3-R MMBT4401L-AL3-R MMBT4401G-AL3-R SOT-323 E B C Tape Reel

 MARKING

MMBT4401 NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2 of 6

www.unisonic.com.tw QW-R206-035.F

 ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified) (Note)

PARAMETER SYMBOL RATINGS UNIT

Collector-Base Voltage VCBO 60 V

Collector-Emitter Voltage VCEO 40 V

Emitter-Base Voltage VEBO 6 V

Collector Current-Continuous IC 600 mA

Total Device Dissipation

Derate above 25℃ PD 350

2.8

mW

mW/°C

Junction Temperature TJ +150 °C

Storage Temperature TSTG -40 ~ +150 °C

Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty

cycle operations.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL DATA (Ta=25°C, unless otherwise specified)

CHARACTERISTIC SYMBOL RATING UNIT

Junction to Ambient θJA 357 °C /W

 ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage BVCBO IC=0.1mA, IE=0 60 V

Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA, IB=0 40 V

Emitter-Base Breakdown Voltage BVEBO IE=0.1mA, IC=0 6 V

Collector Cut-off Current ICEX V

CE=35V, VEB=0.4V µA

Base Cut-off Current IBL V

CE=35V, VEB=0.4V µA

ON CHARACTERISTICS (note)

hFE1 V

CE=1V, IC=0.1mA 20

hFE2 V

CE=1V, IC=1mA 40

hFE3 V

CE=1V, IC=10mA 80

hFE4 V

CE=1V, IC=150mA 100 300

DC Current Gain

hFE5 V

CE=2V, IC=500mA 40

Collector-Emitter Saturation Voltage VCE(SAT1)

VCE(SAT2)

IC=150mA, IB=15mA

IC=500mA, IB=50mA

0.4

0.75

V

Base-Emitter Saturation Voltage VBE(SAT1)

VBE(SAT2)

IC=150mA, IB=15mA

IC=500mA, IB=50mA 0.75 0.95

1.2

V

SMALL SIGNAL CHARACTERISTICS1

Current Gain Bandwidth Product fT V

CE=10V, IC=20mA, f=100MHz 250 MHz

Collector-Base Capacitance Ccb V

CB=5V, IE=0, f=140kHz 6.5 pF

Emitter-Base Capacitance Ceb V

BE=0.5V, IC=0, f=140kHz 30 pF

Input Impedance hie VCE=10V, IC=1mA, f=1kHz 1 15 kΩ

Voltage Feedback Ratio hre VCE=10V, IC=1mA, f=1kHz 0.1 8 ×10-4

Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 40 500

Output Admittance hoe VCE=10V, IC=1mA, f=1kHz 1 30 µmhos

SWITCHING CHARACTERISTICS

Delay Time tD VCC=30V, VEB=2V

IC=150mA IB1=15mA 15 ns

Rise Time tR

VCC=30V, VEB=2V

IC=150mA IB1=15mA 20 ns

Storage Time tS 225 ns

Fall Time tF VCC=30V, IC=150mA

IB1= IB2=15mA 30 ns

Note: Pulse test: PulseWidth≤300μs, Duty Cycle≤2%

MMBT4401 NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 3 of 6

www.unisonic.com.tw QW-R206-035.F

 TEST CIRCUIT

6V

30V

0

Figure2. Saturated Turn-Off Switching Timer

≤220ns

-1.5V

1k

Note:BVEBO=5V 37Ω

1KΩ

50Ω

MMBT4401 NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 4 of 6

www.unisonic.com.tw QW-R206-035.F

 TYPICAL CHARACTERISTICS

0.1 110 100 300

200

0

Collector Current, IC (mA)

Typical Pulsed Current Gain

vs Collector Current

Typical Pulsed Current Gain, hFE

0.1

100

0.3

100110 500

Collector-Emitter Saturation Voltage

vs Collector Current

Collector-Emitter Voltage, VCESAT (V)

0.2

0.3 3 30

300

400

500

VCE =5V

125

25

-40

0.4

Collector Current, IC (mA)

125

25

-40

β=10

C

Base-Emitter Voltage, VBESAT (V)

Base-Emitter OnVoltage, VBEON (V)

Ambient Temperature, TA(℃)

Collector-Cutoff Current

vs Ambient Temperature

500

0.1

7525 50 100 125 150

100

1

10

VCB=40V

0.1 1 10 100

12

4

Reverse Bias Voltage (V)

Emitter Transition and Output

Capacitance vs Reverse Bias Voltage

8

16

20 f=1MHz

Cte

Cob

MMBT4401 NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 5 of 6

www.unisonic.com.tw QW-R206-035.F

 TYPICAL CHARACTERISTICS(Cont.)

10 100 1000

160

0

Collector Current, IC (mA)

Turn On and Turn Off Times

vs Collector Current

Time (ns)

80

240

320

400

VCC =25V

toff

ton

IB1=IB2=IC

10

10 100 1000

160

0

Collector Current, IC(mA)

Switching Times

vs Collector Current

Time (ns)

80

240

320

400

VCC =25V

tS

tF

IB1=IB2=IC

10

tR

tD

Power Dissipation, PD(W)

Char.Relative To Voltage At

IC=10mA

Char.Relative To Voltage at TA=25℃

Char.Relative To Voltage at VCE=10V

MMBT4401 NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 6 of 6

www.unisonic.com.tw QW-R206-035.F

 TYPICAL CHARACTERISTICS(Cont.)

VCE, Collector-Emitter Voltage (Volts)

200

600

20

010 30

S.O.A

IC, Collector Current (mA)

400

800

5040

1000

1200

100

80

60

40

20

1mS

1S

1400

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.