2SD1572, 2SD1600 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1091 Outline TO-220AB 2 1 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 2.2 k (Typ) 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD1572 2SD1600 Unit Collector to base voltage VCBO 60 80 V Collector to emitter voltage VCEO 60 80 V Emitter to base voltage VEBO 7 7 V Collector current IC 8 8 A Collector peak current IC(peak) 12 12 A 40 40 W 1 Collector power dissipation PC* Junction temperature Tj 150 150 C Storage temperature Tstg -55 to +150 -55 to +150 C Note: 1. Value at TC = 25C. 2SD1572, 2SD1600 Electrical Characteristics (Ta = 25C) 2SD1572 2SD1600 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V(BR)CEO 60 -- -- 80 -- -- V IC = 25 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 7 -- -- 7 -- -- V IE = 50 mA, IC = 0 Collector cutoff current ICBO -- -- 100 -- -- 100 A VCB = 60 V, IE = 0 ICEO -- -- 10 -- -- 10 A VCE = 50 V, RBE = DC current tarnsfer ratio hFE 1000 -- 20000 1000 -- 20000 Collector to emitter VCE(sat)1 -- -- 1.5 -- -- 1.5 V IC = 4 A, IB = 8 mA* saturation voltage VCE(sat)2 -- -- 3.0 -- -- 3.0 V IC = 8 A, IB = 80 1 mA* Base to emitter VBE(sat)1 -- -- 2.0 -- -- 2.0 V IC = 4 A, IB = 8 mA* saturation voltage VBE(sat)2 -- -- 3.5 -- -- 3.5 V IC = 8 A, IB = 80 1 mA* Turn on time ton -- 0.5 -- -- 0.5 -- s IC = 4 A, Storage time tstg -- 6.0 -- -- 6.0 -- s IB1 = -IB2 = 8 mA Fall time tf -- 1.5 -- -- 1.5 -- s Note: 2 1. Pulse test. VCE = 3 V, IC = 4 A* 1 1 1 2SD1572, 2SD1600 Maximum Collector Dissipation Curve Collector power dissipation PC (W) 60 40 20 0 50 100 Case temperature TC (C) 150 Area of Safe Operation 20 1 s iC(peak) IC(max) 5 2 1.0 0.5 0.2 Ta = 25C 1 Shot Pulse 0.1 0.05 s s s 0 m 0 m ation 10 = 1 = 1 r pe PW PW C O D Collector current IC (A) 10 2SD1572 2SD1600 0.02 1 2 5 10 20 50 100 Collector to emitter voltage VCE (V) 3 2SD1572, 2SD1600 DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 30,000 VCE = 3 V Pulse 10,000 3,000 Ta 5C =7 C 25 1,000 5C -2 300 100 30 0.1 0.3 1.0 3 Collector current IC (A) 10 DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 30,000 VCE = 3 V Pulse 10,000 3,000 1,000 Ta 5C =7 C 25 5C -2 300 100 30 0.1 0.3 1.0 3 Collector current IC (A) 10 Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 4 10 500 200 3 VBE(sat) 1.0 VCE(sat) 0.3 0.1 0.1 IC/IB = 200 500 Ta = 25C Pulse 1.0 3 0.3 Collector current IC (A) 10 2SD1572, 2SD1600 Switching Time vs. Collector Current 10 Switching time t (s) Ta = 25C tstg 3 tf 1.0 ton 0.3 VCC = 30V IC = 500 IB1 = -500 IB2 0.1 0.1 3 0.3 1.0 Collector current IC (A) 10 Transient Thermal Resistance Thermal resistance j-c (C/W) 100 30 10 0.1 s to 10 s 3 0 ms 1 ms to 10 1.0 0.3 0.1 0.1 1.0 TC = 25C 1.0 10 Time t 10 (s) 100 (ms) 5 2SD1572, 2SD1600 When using this document, keep the following in mind: 1. 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