2SD1572, 2SD1600
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB1091
Outline
TO-220AB
2.2 kΩ
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
123
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD1572 2SD1600 Unit
Collector to base voltage VCBO 60 80 V
Collector to emitter voltage VCEO 60 80 V
Emitter to base voltage VEBO 77V
Collector current IC88A
Collector peak current IC(peak) 12 12 A
Collector power dissipation PC*140 40 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SD1572, 2SD1600
2
Electrical Characteristics (Ta = 25°C)
2SD1572 2SD1600
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to emitter
breakdown voltage V(BR)CEO 60 — — 80 — — V IC = 25 mA, RBE = ∞
Emitter to base
breakdown voltage V(BR)EBO 7—— 7—— VI
E
= 50 mA, IC = 0
Collector cutoff current ICBO — — 100 — — 100 µA VCB = 60 V, IE = 0
ICEO ——10 ——10 µAV
CE = 50 V, RBE = ∞
DC current tarnsfer
ratio hFE 1000 — 20000 1000 — 20000 VCE = 3 V, IC = 4 A*1
Collector to emitter VCE(sat)1 — — 1.5 — — 1.5 V IC = 4 A, IB = 8 mA*1
saturation voltage VCE(sat)2 — — 3.0 — — 3.0 V IC = 8 A, IB = 80
mA*1
Base to emitter VBE(sat)1 — — 2.0 — — 2.0 V IC = 4 A, IB = 8 mA*1
saturation voltage VBE(sat)2 — — 3.5 — — 3.5 V IC = 8 A, IB = 80
mA*1
Turn on time ton — 0.5 — — 0.5 — µs IC = 4 A,
Storage time tstg — 6.0 — — 6.0 — µs IB1 = –IB2 = 8 mA
Fall time tf— 1.5 — — 1.5 — µs
Note: 1. Pulse test.
2SD1572, 2SD1600
3
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Collector power dissipation PC (W)
20
10
5
2
1.0
0.2
0.5
0.1
Collector current IC (A)
0.02
0.05
110502 5 20 100
Collector to emitter voltage VCE (V)
iC(peak)
IC(max)
DC Operation
PW = 10 ms
PW =
1 ms
Area of Safe Operation
Ta = 25°C
1 Shot Pulse 2SD1572
2SD1600
1 µs
100 µs
2SD1572, 2SD1600
4
30,000
10,000
3,000
1,000
300
100
30
0.1
DC current transfer ratio hFE
0.3 1.0 3
Collector current IC (A) 10
DC Current Transfer Ratio
vs. Collector Current
25°C
VCE = 3 V
Pulse
–25°C
Ta = 75°C
30,000
10,000
3,000
1,000
300
100
30
0.1
DC current transfer ratio hFE
0.3 1.0 3
Collector current IC (A) 10
DC Current Transfer Ratio
vs. Collector Current
25°C
VCE = 3 V
Pulse
–25°C
Ta = 75°C
Saturation Voltage vs.
Collector Current
Ta = 25°C
Pulse
10
3
1.0
0.3
0.1
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
0.1 0.3
Collector current IC (A)
31.0 10
VBE(sat)
VCE(sat) 500 IC/IB = 200
500 200
2SD1572, 2SD1600
5
tf
ton
tstg
VCC = 30V
IC = 500 IB1 = –500 IB2
Switching Time
vs. Collector Current
Switching time t (µs)
10
3
1.0
0.3
0.1 0.30.1 1.0
Collector current IC (A)
310
Ta = 25°C
Transient Thermal Resistance
100
30
10
3
1.0
0.3
0.10.1 1.0 10 (s)
1.0 10 100 (ms)
Time t
Thermal resistance θj-c (°C/W)
TC = 25°C
0.1 s to 10 s
1 ms to 100 ms
2SD1572, 2SD1600
6
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examples described herein.
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