LT4293
1
Rev. 0
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TYPICAL APPLICATION
FEATURES DESCRIPTION
LTPoE++/IEEE 802.3bt
PD Interface Controller
The LT
®
4293 is an LTPoE++/IEEE 802.3af/at/bt-compliant
powered device (PD) interface controller. The T2P output
distinguishes between LTPoE++ and IEEE 802.3bt power
sourcing equipment (PSE) during mutual identification
and negotiation of available power.
The LT4293 utilizes an external, low RDS(ON), N-channel,
hot swap MOSFET and supports the LT4320/LT4321 ideal
bridges, to extend the end-to-end power delivery effi-
ciency and eliminate costly heat sinks. The LT4293 also
includes a power good output, onboard signature resistor,
undervoltage lockout, and thermal protection. Start-up
inrush current is adjustable with an external capacitor.
Auxiliary power override is supported as low as 9V with
the AUX pin.
The LT4293 can be configured to support all possible
LTPoE++, 802.3bt, 802.3at and 802.3af power levels
with external component changes. Pin-for-pin compat-
ibility with the LT4275 and LT4294 family of PD Interface
Controllers enables easy migration between LTPoE++ PDs
and IEEE 802.3bt-compliant PDs.
LTPoE++/IEEE 802.3bt Single-Signature Powered Device Interface
APPLICATIONS
n LTPoE++
®
/IEEE 802.3bt Powered Device (PD)
Controller
n Supports Up to 90W PDs
n Distinguishes Between LTPoE++ and IEEE 802.3bt PSEs
n 5-Event Classification Sensing
n Superior Surge Protection (100V Absolute Maximum)
n Wide Junction Temperature Range
(–40°Cto125°C)
n Overtemperature Protection
n Integrated Signature Resistor
n External Hot Swap N-Channel MOSFET for Lowest
Power Dissipation and Highest System Efficiency
n Configurable Aux Power Support as Low as 9V
n Pin Compatible with LT4275A/B/C and LT4294
n Available in 10-Lead MSOP and 3mm × 3mm
DFNPackages
n High Power Wireless Data Systems
n Outdoor Security Camera Equipment
n Commercial and Public Information Displays
n High Temperature Industrial Applications
CLASS
SINGLE-SIGNATURE
POWER CLASSIFICATION
(AT PD INPUT)
LTPoE++ IEEE 802.3bt
0 13W 13W
1 3.84W 3.84W
2 6.49W 6.49W
3 13W 13W
4 25.5W 25.5W
5 38.7W 40W
6 52.7W 51W
7 70W 62W
8 90W 71.3W
LT4293
VPORT HSGATE
GND
4293 TA01a
HSSRC
AUX
RCLASS
RCLASS++
RCLS++
PWRGD
T2P
RCLS
CPD
0.1µF
VPORT
DATA
PAIR
SPARE
PAIR
RUN
47nF
3.3k
PSMN040-100MSE
VIN
VOUT
+
ISOLATED
POWER
SUPPLY
OPTO PSE TYPE
(TO µP)
+
~
~
+
~
~
+
CPORT
VAUX (9V TO 60V)
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LT4293
2
Rev. 0
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ORDER INFORMATION
ABSOLUTE MAXIMUM RATINGS
VPORT, HSSRC Voltages ......................... 0.3V to 100V
HSGATE Current.................................................. ±20mA
RCLASS, RCLASS++
Voltages .......................... 0.3V to 8V (and VPORT)
AUX Current ........................................................ ±1.4mA
T2P, PWRGD Voltage ............................... 0.3V to 100V
T2P, PWRGD Current ...............................................5mA
(Notes 1, 3)
TUBE TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE
LT4293IDD#PBF LT4293IDD#TRPBF LHJX 10-Lead (3mm × 3mm) Plastic DFN –40°C to 85°C
LT4293HDD#PBF LT4293HDD#TRPBF LHJX 10-Lead (3mm × 3mm) Plastic DFN –40°C to 125°C
LT4293IMS#PBF LT4293IMS#TRPBF LTHJY 10-Lead Plastic MSOP –40°C to 85°C
LT4293HMS#PBF LT4293HMS#TRPBF LTHJY 10-Lead Plastic MSOP –40°C to 125°C
Contact the factory for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.
Tape and reel specifications. Some packages are available in 500 unit reels through designated sales channels with #TRMPBF suffix.
TOP VIEW
11
GND
DD PACKAGE
10-LEAD (3mm × 3mm) PLASTIC DFN
TJMAX = 150°C, θJC = 5°C/W
EXPOSED PAD (PIN 11) IS GND, MUST BE SOLDERED TO PCB GND
10
9
6
7
8
4
5
3
2
1VPORT
HSGATE
HSSRC
PWRGD
T2P
GND
AUX
RCLASS
RCLASS++
GND
1
2
3
4
5
GND
AUX
RCLASS
RCLASS++
GND
10
9
8
7
6
VPORT
HSGATE
HSSRC
PWRGD
T2P
TOP VIEW
MS PACKAGE
10-LEAD PLASTIC MSOP
TJMAX = 150°C, θJC = 45°C/W
PIN CONFIGURATION
Operating Junction Temperature Range (Note 4)
LT4293I ................................................40°C to 85°C
LT4293H ............................................ 40°C to 125°C
Storage Temperature Range .................. 65°C to 150°C
Lead Temperature
(Soldering, 10 sec.) ..................... 300°C (MSOP Only)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VPORT Operating Input Voltage At VPORT Pin l60 V
VSIG VPORT Signature Range At VPORT Pin l1.5 10 V
VCLASS VPORT Classification Range At VPORT Pin l12.5 21 V
VMARK VPORT Mark Range At VPORT Pin, Preceded by VCLASS l5.6 10 V
VPORT Aux Mode Range At VPORT Pin, AUX > VAUXT l8 60 V
Signature/Class Hysteresis Window l1.0 V
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. (Note 3)
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ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. (Note 3)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VRESET Reset Threshold At VPORT Pin, Preceded by VCLASS l2.6 5.6 V
VHSON Hot Swap Turn-On Voltage l35 37 V
VHSOFF Hot Swap Turn-Off Voltage l30 31 V
Hot Swap On/Off Hysteresis Window l3 V
Supply Current
Supply Current VVPORT = VHSSRC = 57V l2 mA
Supply Current During Classification VVPORT = 17.5V, RCLASS and RCLASS++ Open l0.4 0.7 0.9 mA
Supply Current During Mark Event VVPORT = VMARK After 1st Classification Event l0.5 2.2 mA
Detection and Classification Signature
Detection Signature Resistance VSIG (Note 2) l23.7 24.4 25.2
Resistance During Mark Event VMARK (Note 2) l5.8 8.3 11
RCLASS/RCLASS++ Operating Voltage –10mA ≥ IRCLASS ≥ –36mA, VCLASS l1.32 1.40 1.43 V
Classification Signature Stability Time VVPORT Step to 17.5V,
34.8Ω from RCLASS or RCLASS++ to GND
l2 ms
Analog/Digital Interface
VAUXT AUX Threshold l6.1 6.3 6.5 V
IAUXH AUX Pin Hysteresis Current VAUX = 6.1V l3.2 5 7 µA
T2P Output Low 1mA Load l0.8 V
PWRGD Output Low 1mA Load l0.8 V
PWRGD Leakage Current VPWRGD = 60V l5 µA
T2P Leakage Current T2P = 60V l5 µA
Hot Swap Control
IGPU HSGATE Pull-Up Current VHSGATE – VHSSRC = 5V (Note 6) l–27 –22 –18 µA
VGOC HSGATE Open Circuit Voltage –10µA Load, with Respect to HSSRC l10 18 V
HSGATE Pull-Down Current VHSGATE – VHSSRC = 5V l200 µA
Timing
T2P Frequency VAUX > VAUXT, and RCLASS++ Has Resistor to GND l690 840 990 Hz
T2P Duty Cycle in PoE Operation (Note 5) After LTPoE++ 3-Event Classification
After 4-Event Classification
After 5-Event Classification
(RCLASS++ Has Resistor to GND)
75
50
25
%
%
%
T2P Duty Cycle in Auxiliary
Supply Operation (Note 5)
VAUX > VAUXT, and RCLASS++ Has Resistor to GND 75 %
1st Classification Event Timing
Threshold
l31 87 ms
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Signature resistance specifications do not include resistance
added by the external diode bridge which can add as much as 1.1k to the
port resistance.
Note 3: All voltages with respect to GND unless otherwise noted.
Positive currents are into pins; negative currents are out of pins unless
otherwisenoted.
Note 4: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 150°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
Note 5: Specified as the percentage of the period which T2P is low
impedance with respect to GND. Appears after PWRGD valid.
Note 6: IGPU available in PoE powered operation. That is, available after
VVPORT > VHSON and VAUX < VAUXT, over the range where VVPORT is
between VHSOFF and 60V.
LT4293
4
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TYPICAL PERFORMANCE CHARACTERISTICS
Detection Signature Resistance
vs Input Voltage Reset Threshold
PWRGD, T2P Output Low
Voltage vs Current VPORT Classification Thresholds T2P Frequency
Input Current vs Input Voltage 25k
Detection Signature Range
VPORT Hot Swap Thresholds Supply Current During Power-On
VPORT VOLTAGE (V)
0
VPORT CURRENT (mA)
0.2
0.3
0.4
0.5
0.1
08
4293 G01
1062 4
T = –40°C
T = 25°C
T = 75°C
T = 125°C
TEMPERATURE (°C)
–50
VPORT VOLTAGE (V)
32
33
34
35
36
37
31
30 100
4293 G02
12575–25 50250
HOT SWAP OFF
HOT SWAP ON
VPORT VOLTAGE (V)
35
SUPPLY CURRENT (mA)
1.0
1.5
2.0
0.5
055
4293 G03
605040 45
T = –40°C
T = 25°C
T = 75°C
T = 125°C
VPORT VOLTAGE (V)
1
SIGNATURE RESISTANCE (kΩ)
25.25
25.75
26.25
24.75
24.25
23.75
4293 G04
973 5
T = –40°C
T = 25°C
T = 75°C
T = 125°C
TEMPERATURE (°C)
–50
VPORT VOLTAGE (V)
3.6
4.1
5.1
4.6
5.6
3.1
2.6 100
4293 G05
12575–25 50250
CURRENT (mA)
0
VOLTAGE (V)
2
3
4
1
04
4293 G06
531 2
T = –40°C
T = 25°C
T = 75°C
T = 125°C
TEMPERATURE (°C)
–50
VPORT VOLTAGE (V)
11.0
11.5
12.0
12.5
10.5
10.0 100
4293 G07
12575–25 50250
DETECT OR MARK TO CLASS
CLASS TO MARK
TEMPERATURE (°C)
–50
T2P FREQUENCY (Hz)
840
740
890
940
990
790
690 100
4293 G08
12575–25 50250
LT4293
5
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PIN FUNCTIONS
GND (Pins 1, 5, DFN Exposed Pad Pin 11): Device
Ground. Exposed pad must be electrically and thermally
connected to pin 5 and PCB GND.
AUX (Pin 2): Auxiliary Sense. A resistive divider from the
auxiliary power input to AUX sets the voltage at which the
auxiliary supply takes over. In auxiliary power operation,
HSGATE pulls down, the signature resistor disconnects,
classification is disabled, the PWRGD pin is high imped-
ance and T2P indicates max available power. The AUX pin
sinks IAUXH when below its threshold voltage of VAUXT to
provide hysteresis. Connect to GND when not used.
RCLASS (Pin 3): Configurable PoE Classification Resistor.
See Table2.
RCLASS++ (Pin 4): Configurable PoE Classification
Resistor. See Table2.
T2P (Pin 6): PSE Type Indicator, Open-Drain Output. See
the T2P Output section in Applications Information for
pin behavior.
PWRGD (Pin 7): Power Good Indicator, Open-Drain
Output. Pulls to GND during VCLASS and inrush.
HSSRC (Pin 8): External Hot Swap MOSFET Source.
Connect to source of the external MOSFET.
HSGATE (Pin 9): External Hot Swap MOSFET Gate Control,
Output. Connect to gate of the external MOSFET.
VPORT (Pin 10): PD interface upper power rail and exter-
nal Hot Swap MOSFET drain connection.
LT4293
6
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BLOCK DIAGRAM
4293 BD
CONTROL
LOGIC
CLASSIFICATION
LOGIC
VOLTAGE AND
CURRENT REFERENCES
CHARGE
PUMP
OVERTEMP
ON
GND
VPORT VPORT
VGOC
6.3V
~6.5V
1.4V 1.4V
+
+
EN
+
EN
VPORT
VPORT
AUX
RCLASS RCLASS++
T2P
HSSRC
HSGATE
PWRGD
LT4293
7
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APPLICATIONS INFORMATION
OVERVIEW
Power over Ethernet (PoE) continues to gain popularity
as products take advantage of DC power and high speed
data available from a single RJ45 connector. Powered
device(PD) equipment vendors are running into the 25.5W
power limit established by the IEEE 802.3at standard.
The LT4293 is an LTPoE++/IEEE 802.3bt-compliant PD
interface controller, and allows up to 90W operation while
maintaining backwards compatibility with existing PSE
systems. The T2P output distinguishes between LTPoE++
and IEEE 802.3bt power sourcing equipment (PSE) during
mutual identification and negotiation of available power.
The LT4293 controls a low RDS(ON) N-channel MOSFET
to maximize efficiency and deliveredpower.
Analog Devices also provides a complete family of PSE,
PD and ideal bridge solutions. See Related Parts section
at the end of this data sheet.
MODES OF OPERATION
Detection Signature
During detection, the PSE looks for a 25k signature resis-
tor which identifies the device as a PD. The PSE will apply
two voltages in the range of 2.7V to 10.1V and measure
the corresponding currents. Figure1 shows the detec-
tion voltages. The PSE calculates the signature resistance
using a ∆V/∆I measurement technique.
The LT4293 presents its precision, temperature-compen-
sated 24.4k resistor between the VPORT and GND pins,
allowing the PSE to recognize a PD is present and request-
ing power to be applied. The LT4293 signature resistor is
smaller than 25k to compensate for the additional series
resistance introduced by the IEEE required bridge or the
LT4321-based ideal bridge.
IEEE 802.3bt Single-Signature vs Dual-Signature PDs
IEEE 802.3bt defines two PD topologies: single-signature
and dual-signature. The LT4293 primarily targets single-
signature PD topologies, eliminating the need for a sec-
ond PD controller. All PD descriptions and IEEE 802.3
Figure1. Type 3 or 4 PSE, 1-Event Class Sequence
standard references in this data sheet are limited in scope
to single-signature PDs.
The LT4293 may be deployed in dual-signature PD appli-
cations. For more information, contact Analog Devices
Applications.
Classification Signature and Mark
The classification/mark process varies depending on the
PSE type. A PSE, after a successful detection, may apply
a classification probe voltage of 14.5V to 20.5V and mea-
sure the PD classification signature current. Once the PSE
applies a classification probe voltage, the PSE returns
the PD voltage to the mark voltage range before apply-
ing another classification probe voltage, or powering up
thePD.
An example of 1-Event classification is shown in Figure1.
In 2-Event classification, a PSE probes for power clas-
sification twice as shown in Figure2. An IEEE 802.3bt
PSE may apply as many as 5 events before powering up
the PD.
IEEE 802.3bt Physical Classification and Demotion
IEEE 802.3bt defines physical classification to allow a PD
to request a power allocation from the connected PSE and
to allow the PSE to inform the PD of the PSEs available
power. Demotion is provided if the PD Requested Power
level is not available at the PSE. If demoted, the PD must
operate in a lower power state.
4293 F01
V
VPORT
VHSON
VHSOFF
VCLASSMIN
VMARKMAX
VSIGMIN
VRESET
DETECT
1ST MARK
1ST CLASS
POWER ON
LT4293
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Figure2. Type 2 PSE, 2-Event Class Sequence
APPLICATIONS INFORMATION
Table2. LTPoE++/IEEE802.3bt Single-Signature Classification, Power Levels and Resistor Selection
PD REQUESTED CLASS
PD REQUESTED POWER
LTPoE++/IEEE802.3bt
PD TYPE
LTPoE++/IEEE802.3bt NOMINAL CLASS CURRENT
RESISTOR (1%)
RCLS RCLS++
0 13W Type 1 2.5mA 1.00kΩ Open
1 3.84W Type 1 or 3 10.5mA 140Ω Open
2 6.49W Type 1 or 3 18.5mA 76.8Ω Open
3 13W Type 1 or 3 28mA 49.9Ω Open
4 25.5W Type 2 or 3 40mA 34.8Ω Open
LTPoE++ 38.7W or 5 38.7W 40W LTPoE++ or Type 3 40mA/2.5mA 1.00kΩ 37.4Ω
LTPoE++ 52.7W or 6 52.7W 51W LTPoE++ or Type 3 40mA/10.5mA 140Ω 46.4Ω
LTPoE++ 70W or 7 70W 62W LTPoE++ or Type 4 40mA/18.5mA 76.8Ω 64.9Ω
LTPoE++ 90W or 8 90W 71.3W LTPoE++ or Type 4 40mA/28mA 49.9Ω 118Ω
Figure3. Type 3 or 4 PSE, 3-Event Class Sequence
The number of class/mark events issued by the PSE
directly indicates the power allocated to the PD and is
summarized in Table1.
IEEE 802.3bt provides nine PD classes and four PD types,
as shown in Table2. The LT4293 class is configured by
setting the RCLS and RCLS++ resistor values.
IEEE 802.3bt PSEs present a single classification event
(see Figure 1) to Class 0 through 3 PDs. A Class 0
through 3 PD presents its class signature to the PSE and
is then powered on if sufficient power is available. Power
limited IEEE 802.3bt PSEs may issue a single event to
Class 4 and higher PDs in order to demote those PDs to
Class3(13W).
Table1. IEEE 802.3bt PSE Allocated Power
PD REQUESTED
CLASS
NUMBER OF PSE CLASS/MARK EVENTS
12345
0 13W
1 3.84W
2 6.49W
3 13W
413W 25.5W
513W 25.5W 40W
613W 25.5W 51W
713W 25.5W 51W 62W
813W 25.5W 51W 71.3W
Note: Bold indicates the PD has been demoted.
4293 F02
V
PORT
VHSON
VHSOFF
VCLASSMIN
VMARKMAX
VSIGMIN
VRESET
DETECT
1ST CLASS
1ST MARK 2ND MARK
2ND CLASS
POWER ON
4293 F03
V
PORT
VHSON
VHSOFF
VCLASSMIN
VMARKMAX
VSIGMIN
VRESET
DETECT
1ST CLASS
1ST MARK 2ND MARK 3RD MARK
2ND CLASS 3RD CLASS
POWER ON
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IEEE 802.3bt PSEs present up to three classification
events to Class 4 PDs (see Figure3). Class 4 PDs pres-
ent a class signature 4 on all events. The third event dif-
ferentiates a Class 4 PD from a higher Class PD. Power-
limited IEEE 802.3bt PSEs may issue three events to
Class 5 and higher PDs in order to demote those PDs to
Class4(25.5W).
IEEE 802.3bt PSEs present four classification events (see
Figure4) to Class 5 and 6 PDs. Class 5 and 6 PDs present
a class signature 4 on the first two events, then present
a class signature 0 or 1, respectively, on the remaining
events. Power limited IEEE 802.3bt PSEs may issue four
events to Class 7 and higher PDs in order to demote those
PDs to Class 6 (51W).
IEEE 802.3bt PSEs present five classification events
(seeFigure5) to Class 7 and 8 PDs. Class 7 and 8 PDs
present a class signature 4 on the first two events, then
present a class signature 2 or 3, respectively, on the
remaining events.
The number of class/mark events is communicated
through the LT4293 T2Ppin. See T2P Output section for
more details.
LTPoE++ Demotion and Denial
Both LTPoE++ and IEEE 802.3 PSEs may demote PDs
to a lower power state when the PD Requested Power
exceeds the PSE available power. In addition, a power-
limited LTPoE++ PSE may deny power to a PD requesting
Class 6 or higher. When 2 or fewer class/mark events are
received, PD allocated power is at or below 25.5W and
LTPoE++ PSEs are considered equivalent to IEEE 802.3
PSEs, as shown in Table5.
Table3. LTPoE++ PSE Allocated Power
PD REQUESTED
CLASS
NUMBER OF PSE CLASS/MARK EVENTS
123
0 13W
1 3.84W
2 6.49W
3 13W
413W 25.5W
513W 25.5W 38.7W
613W 25.5W 52.7W
713W 25.5W 70W
813W 25.5W 90W
Note: Bold indicates the PD has been demoted.
Classification Resistors (RCLS and RCLS++)
The RCLS and RCLS++ resistors set the classification cur-
rents corresponding to the PD power classification. Select
the value of RCLS and RCLS++ from Table2 and connect
each 1% resistor between the RCLASS, RCLASS++ pins
and GND.
Detection Signature Corrupt During Mark Event
During the mark event, the LT4293 presents <11kΩ to the
port as required by the LTPoE++/IEEE 802.3 specifications.
Inrush and Power On
Once the PSE detects and classifies the PD, the PSE then
powers on the PD. When the port voltage rises above
the VHSON threshold, it begins to source IGPU out of the
Figure5. Type 4 PSE, 5-Event Class Sequence
APPLICATIONS INFORMATION
Figure4. Type 3 or 4 PSE, 4-Event Class Sequence
VPORT
VHSON
VHSOFF
VCLASSMIN
VMARKMAX
VSIGMIN
VRESET
DETECT
1ST
CLASS
2ND
CLASS
3RD
CLASS
4TH
CLASS
POWER ON
1ST
MARK
2ND
MARK
3RD
MARK
4TH
MARK
4293 F05
VPORT
VHSON
VHSOFF
VCLASSMIN
VMARKMAX
VSIGMIN
VRESET
DETECT
1ST
CLASS
2ND
CLASS
3RD
CLASS
4TH
CLASS
5TH
CLASS
POWER ON
1ST
MARK
2ND
MARK
3RD
MARK
4TH
MARK
5TH
MARK
LT4293
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Figure6. Configuring IINRUSH
LT4293
HSGATE
GND
4293 F06
VPORT HSSRC
CGATE
3.3k
+
C
PORT
VPORT
I
INRUSH
HSGATE pin. This current flows into an external capaci-
tor, CGATE in Figure6, that causes a voltage to ramp up
the gate of the external MOSFET. The external MOSFET
acts as a source follower and ramps the voltage up on
the output bulk capacitor, CPORT, thereby determining the
inrush current, IINRUSH. Design IINRUSH to be approxi-
mately ~100mA. See equation below:
IINRUSH =IGPU
C
PORT
C
GATE
APPLICATIONS INFORMATION
Auxiliary Supply Override
If the AUX pin is held above V
AUXT
, the LT4293 enters
auxiliary power supply override mode. In this mode the
signature resistor disconnects, classification is disabled,
HSGATE pulls down, the PWRGD pin is open drain and
T2P pin indicates max available power.
The AUX pin allows for setting the auxiliary supply turn
on and turn off voltage thresholds, VAUXON, and VAUXOFF
respectively. The auxiliary supply hysteresis voltage,
VAUXHYS, is generated with sinking current, IAUXH, and is
active only when the AUX pin voltage is less than VAUXT.
Use the following equations to set VAUXON and VAUXOFF
via R1 and R2 in Figure7. Note that an internal 6.5V Zener
limits the voltage on the AUX pin.
Figure7. AUX Threshold and Hysteresis Calculation
LT4293
GND
4293 F07
AUX
R1
VAUX
+
R2
R1=
V
AUXON
V
AUXOFF
IAUXH
=
V
AUXHYS
IAUXH
R2 =R1
VAUXOFF
VAUXT
1
R1VAUX(MAX) VAUXT
1.4mA
The LT4293 internal charge pump provides an N-channel
MOSFET solution, eliminating a larger and more costly
P-channel MOSFET. The low RDS(ON) MOSFET also maxi-
mizes power delivery and efficiency, reduces power and
heat dissipation, and eases thermal design.
Power Good
The PWRGD pin is held low by its open drain output until
HSGATE charges up to approximately 7V above HSSRC.
The PWRGD pin is used to hold off the downstream cir-
cuitry until inrush is complete and the external MOSFET
is fully enhanced. The HSGATE pin remains high and the
PWRGD pin remains open-drain until the port voltage falls
below VHSOFF.
Delay Start
When the PSE powers up the port, the PD application
should not draw more than 350mA for 80ms to comply
with the IEEE 802.3 standard.
A capacitor up to 1000pF may be placed between the AUX
pin and GND to improve noise immunity. VAUXON must be
lower than VHSOFF.
T2P Output
The LT4293 communicates the PSE allocated power to the
PD application via the T2P pin. The T2P pin state is deter-
mined by the AUX pin, the RCLASS++ pin, and the number
of classification events. The LT4293 uses a 5-state encod-
ing for the T2P output. T2P state and the associated PSE
allocated power are shown in Table4 and Table5.
Table4. T2P Response During Auxiliary Power Operation
PD REQUESTED CLASS T2P*
0 − 4 Low-Z
5 − 8 75%
*Specified as the percentage of the period which T2P is low impedance
with respect to GND.
LT4293
11
Rev. 0
For more information www.analog.com
The highest priority input is the AUX pin. AUX is asserted
to enter the auxiliary power state and deasserted to
enter the PoE state. In the auxiliary power state, the T2P
pin indicates the highest available power, based on PD
Requested Class. The auxiliary power supply must be
sized to provide at least the PD Requested Class Power.
Second, PD Requested Class and PD Requested Power
are configured using the RCLASS and RCLASS++ pins.
The RCLASS++ pin alone can be used to determine if the
PD Class is 0−4, 5−8 or LTPoE++ as shown in Table2.
Last, the PSE type and the number of classification events
determine the amount of power allocated by the PSE as
described in Table1 and Table3.
Interoperability Across Various PSEs and Auxiliary
Power Source
Table6 summarizes the expected LT4293 T2P response,
the PSE allocated power and the number of classification
events. The result is a function of PD Requested Class
and power source—Auxiliary or PoE.
APPLICATIONS INFORMATION
Table5. T2P Response During PoE Operation
POWER
SOURCE
NUMBER OF
CLASS/MARK
EVENTS T2P* PSE ALLOCATED POWER
LTPoE++
1 Hi-Z Min (PD Requested Power, 13W)
2 Low-Z 25.5W
3 75% LTPoE++ PD Requested Power
IEEE
802.3
1 Hi-Z Min (PD Requested Power, 13W)
2 or 3 Low-Z 25.5W
4 50% Min (PD Requested Power, 51W)
5 25% Min (PD Requested Power, 71.3W)
*Specified as the percentage of the period which T2P is low impedance
with respect to GND.
Figure8. Response Example for 25% Low-Z, 75% Hi-Z
LT4293
4293 F08
VCC
GND
T2P
V(T2P)
GND
VCC
25%
Low-Z
75%
Hi-Z
TIME
Table6. LT4293 Interoperability (T2P Response*, Allocated Power, Number of Class/Mark Events)
REQUESTED PD CLASS
(REQUESTED POWER)
PSE TYPE, CLASS (POWER)
AUXILIARY
POWER
SOURCE**
IEEE 802.3
TYPE 1
IEEE 802.3
TYPE 2
IEEE 802.3
TYPE 3
IEEE 802.3
TYPE 4 LTPoE++
CLASS 3
(13W)
CLASS 4
(25.5W)
CLASS 4
(25.5W)
CLASS 5
(40W)
CLASS 6
(51W)
CLASS 7
(62W)
CLASS 8
(71.3W) (38.7W) (52.7W) (70W) (90W)
CLASS 0−3
(Up to 13W)
Hi-Z
Up to 13W
1-Event
Hi-Z
Up to 13W
1-Event
Hi-Z
Up to 13W
1-Event
Hi-Z
Up to 13W
1-Event
Hi-Z
Up to 13W
1-Event
Hi-Z
Up to 13W
1-Event
Hi-Z
Up to 13W
1-Event
Hi-Z
Up to 13W
1-Event
Hi-Z
Up to 13W
1-Event
Hi-Z
Up to 13W
1-Event
Hi-Z
Up to 13W
1-Event
Low-Z
Aux. Power
N/A
CLASS 4
(25.5W)
Hi-Z
13W
1-Event
Low-Z
25.5W
2-Event
Low-Z
25.5W
3-Event
Low-Z
25.5W
3-Event
Low-Z
25.5W
3-Event
Low-Z
25.5W
3-Event
Low-Z
25.5W
3-Event
Low-Z
25.5W
2-Event
Low-Z
25.5W
2-Event
Low-Z
25.5W
2-Event
Low-Z
25.5W
2-Event
Low-Z
Aux. Power
N/A
CLASS 5
(40W)
Hi-Z
13W
1-Event
Low-Z
25.5W
2-Event
Low-Z
25.5W
3-Event
50%
40W
4-Event
50%
40W
4-Event
50%
40W
4-Event
50%
40W
4-Event
75%
38.7W
3-Event
75%
38.7W
3-Event
75%
38.7W
3-Event
75%
38.7W
3-Event
75%
Aux. Power
N/A
CLASS 6
(51W)
Hi-Z
13W
1-Event
Low-Z
25.5W
2-Event
Low-Z
25.5W
3-Event
Low-Z
25.5W
3-Event
50%
51W
4-Event
50%
51W
4-Event
50%
51W
4-Event
DENIED
75%
52.7W
3-Event
75%
52.7W
3-Event
75%
52.7W
3-Event
75%
Aux. Power
N/A
CLASS 7
(62W)
Hi-Z
13W
1-Event
Low-Z
25.5W
2-Event
Low-Z
25.5W
3-Event
Low-Z
25.5W
3-Event
50%
51W
4-Event
25%
62W
5-Event
25%
62W
5-Event
DENIED DENIED
75%
70W
3-Event
75%
70W
3-Event
75%
Aux. Power
N/A
CLASS 8
(71.3W)
Hi-Z
13W
1-Event
Low-Z
25.5W
2-Event
Low-Z
25.5W
3-Event
Low-Z
25.5W
3-Event
50%
51W
4-Event
50%
51W
4-Event
25%
71.3W
5-Event
DENIED DENIED DENIED
75%
90W
3-Event
75%
Aux. Power
N/A
T2P Response*
PSE Allocated Power
Number of Classification Events
75%
90W
3-Event
Note 1. Shade of blue indicates the PD has been demoted or denied power.
* Specified as the percentage of the period which T2P is low impedance with respect to GND.
** Auxiliary Power Supply must be sized to provide PD Requested Power.
LT4293
12
Rev. 0
For more information www.analog.com
Overtemperature Protection
The IEEE 802.3 specification requires a PD to withstand
any applied voltage from 0V to 57V indefinitely. During
classification, however, the power dissipation in the
LT4293 may be as high as 1.5W. The LT4293 can easily
tolerate this power for the maximum IEEE classification
timing but overheats if this condition persists abnormally.
The LT4293 includes an overtemperature protection
feature which is intended to protect the device during
momentary overload conditions. If the junction tempera-
ture exceeds the overtemperature threshold, the LT4293
pulls down HSGATE pin, and disables classification.
EXTERNAL INTERFACE AND COMPONENT SELECTION
PoE Input Bridge
A PD is required to polarity-correct its input voltage. There
are several different options available for bridge rectifiers;
silicon diodes, Schottky diodes, and ideal diodes. When
silicon or Schottky diode bridges are used, the diode for-
ward voltage drops affect the voltage at the VPORT pin.
The LT4293 is designed to tolerate these voltage drops.
Note, the voltage parameters shown in the Electrical
Characteristics are specified at the LT4293 package pins.
A silicon diode bridge consumes up to 4% of the avail-
able power. In addition, silicon diode bridges exhibit poor
pairset-to-pairset unbalance performance. Each branch of
a silicon diode bridge shares source/return current, and
thermal runaway can cause large, non-compliant current
unbalances between pairsets.
While using Schottky diodes can help reduce the power
loss with a lower forward voltage, the Schottky bridge
may not be suitable for high temperature PD applications.
Schottky diode bridges exhibit temperature induced leak-
age currents. The leakage current has a voltage depen-
dency that can invalidate the measured detection signa-
ture. In addition, these leakage currents can back-feed
through the unpowered branch and the unused bridge,
violating IEEE 802.3 specifications.
For high efficiency applications, the LT4293 supports an
LT4321-based PoE ideal diode bridge that reduces the
forward voltage drop from 0.7V to 20mV per diode while
maintaining IEEE 802.3 compliance. The LT4321 simpli-
fies thermal design, eliminates costly heatsinks, and can
operate in space-constrained applications.
Auxiliary Input Bridge
Some PDs are required to receive AC or DC power from an
auxiliary power source. A diode bridge is typically required
to handle the voltage rectification and polaritycorrection.
In high efficiency applications, or in low auxiliary input
voltage applications, the voltage drop across the rectifier
cannot be tolerated. The LT4293 can be configured with
an LT4320-based ideal diode bridge to recover the diode
voltage drop and ease thermal design.
For applications with auxiliary input voltages below
10V, the LT4293 must be configured with an LT4320-
based ideal diode bridge to recover the voltage drop and
guarantee the minimum VPORT voltage is within the
VPORT AUX Mode Range as specified in the Electrical
Characteristicstable.
Input Capacitor
A 0.1μF capacitor is needed from VPORT to GND to meet
the input impedance requirement in IEEE 802.3 and to
properly bypass the LT4293. When operating with the
LT4321, locally bypass each with a 0.047μF capacitor, thus
keeping the total port capacitance within specification.
Transient Voltage Suppressor
The LT4293 specifies an absolute maximum voltage of
100V and is designed to tolerate brief overvoltage events
due to Ethernet cable surges. To protect the LT4293 from
an overvoltage event, install a unidirectional transient
voltage suppressor (TVS) such as an SMAJ58A between
the VPORT and GND pins. For PD applications that require
APPLICATIONS INFORMATION
LT4293
13
Rev. 0
For more information www.analog.com
an auxiliary power input, install a TVS between VIN and
GND. See Layout Considerations for TVS placement.
For extremely high cable discharge and surge protection,
contact Analog Devices Applications.
Exposed Pad
The LT4293 DFN package has an exposed pad that is
internally connected to GND. The exposed pad may only
be connected to GND on the printed circuitboard.
TYPICAL APPLICATIONS
4293 TA03
LT4321
TG36BG12
PSMN075-100MSE ×4
PSMN075-100MSE ×4
WURTH 749022016
BG36
IN36
IN45
IN78
IN12
DATA
PAIRS
1
2
3
6
4
5
8
7
SPARE
PAIRS
OUTN
EN
OUTP SMAJ58A
VPORT
PWRGD
AUX
RCLASS
T2P
RCLASS++
HSGATE
PSMN040-100MSE
LT4293
GND
EN
TG12
BG45TG78 TG45BG78
HSSRC
ISOLATED
POWER
SUPPLY
GND
RUN
VOUT
VIN
22µF
+
RCLS
140Ω
RCLS++
46.4Ω
+
47nF
3.3k
100k
CPD2
0.047µF
CPD1
0.047µF
OPTO PSE TYPE
(TO µP)
PSE TYPE T2P RESPONSE ALLOCATED POWER
IEEE 802.3at 25.5W LOW-Z TO GND 25.5W
IEEE 802.3bt 51W 50% LOW-Z 51W
OR HIGHER POWER
LTPoE++ 52.7W 75% LOW-Z 52.7W
OR HIGHER POWER
LTPoE++/IEEE 802.3bt-Compliant > 99% Efficient 51W Powered Device
LAYOUT CONSIDERATIONS
Avoid excessive parasitic capacitance on the RCLASS
and RCLASS++ pins and place resistors RCLS and RCLS++
close to the LT4293.
It is strictly required for maximum protection to place the
0.1μF input capacitor, CPD, and transient voltage suppres-
sor as close to the LT4293 as possible. When operating
the LT4293 with the LT4321, place a 0.047μF capacitor,
CPD1, as close as possible to the LT4293 VPORT and
GND pins (pin 10 and pin 5, respectively), and a 0.047μF
capacitor, CPD2, as close as possible to the LT4321 OUTP
and OUTN pins.
APPLICATIONS INFORMATION
LT4293
14
Rev. 0
For more information www.analog.com
PACKAGE DESCRIPTION
3.00 ±0.10
(4 SIDES)
NOTE:
1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-2).
CHECK THE LTC WEBSITE DATA SHEET FOR CURRENT STATUS OF VARIATION ASSIGNMENT
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE
TOP AND BOTTOM OF PACKAGE
0.40 ±0.10
BOTTOM VIEW—EXPOSED PAD
1.65 ±0.10
(2 SIDES)
0.75 ±0.05
R = 0.125
TYP
2.38 ±0.10
(2 SIDES)
15
106
PIN 1
TOP MARK
(SEE NOTE 6)
0.200 REF
0.00 – 0.05
(DD) DFN REV C 0310
0.25 ±0.05
2.38 ±0.05
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
1.65 ±0.05
(2 SIDES)2.15 ±0.05
0.50
BSC
0.70 ±0.05
3.55 ±0.05
PACKAGE
OUTLINE
0.25 ±0.05
0.50 BSC
DD Package
10-Lead Plastic DFN (3mm × 3mm)
(Reference LTC DWG # 05-08-1699 Rev C)
PIN 1 NOTCH
R = 0.20 OR
0.35 × 45°
CHAMFER
LT4293
15
Rev. 0
For more information www.analog.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications
subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
PACKAGE DESCRIPTION
MSOP (MS) 0213 REV F
0.53 ±0.152
(.021 ±.006)
SEATING
PLANE
0.18
(.007)
1.10
(.043)
MAX
0.17 –0.27
(.007 – .011)
TYP
0.86
(.034)
REF
0.50
(.0197)
BSC
1234 5
4.90 ±0.152
(.193 ±.006)
0.497 ±0.076
(.0196 ±.003)
REF
8910 76
3.00 ±0.102
(.118 ±.004)
(NOTE 3)
3.00 ±0.102
(.118 ±.004)
(NOTE 4)
NOTE:
1. DIMENSIONS IN MILLIMETER/(INCH)
2. DRAWING NOT TO SCALE
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX
0.254
(.010) 0° – 6° TYP
DETAIL “A”
DETAIL “A”
GAUGE PLANE
5.10
(.201)
MIN
3.20 – 3.45
(.126 – .136)
0.889 ±0.127
(.035 ±.005)
RECOMMENDED SOLDER PAD LAYOUT
0.305 ±0.038
(.0120 ±.0015)
TYP
0.50
(.0197)
BSC
0.1016 ±0.0508
(.004 ±.002)
MS Package
10-Lead Plastic MSOP
(Reference LTC DWG # 05-08-1661 Rev F)
LT4293
16
Rev. 0
For more information www.analog.com
ANALOG DEVICES, INC. 2019
05/19
www.analog.com
TYPICAL APPLICATION
RELATED PARTS
LTPoE++/IEEE 802.3bt > 99% Efficient 71.3W Powered Device
PART NUMBER DESCRIPTION COMMENTS
LT4295 IEEE 802.3bt PD with Forward/Flyback
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2-Event Classification, Programmable Class, Synchronous Forward Controller, 100kHz
to 500kHz, Aux Support
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4293 TA02
LT4321
TG36BG12
PSMN075-100MSE ×4
PSMN075-100MSE ×4
WURTH 749022016
BG36
IN36
IN45
IN78
IN12
DATA
PAIRS
1
2
3
6
4
5
8
7
SPARE
PAIRS
OUTN
EN
OUTP SMAJ58A
VPORT
PWRGD
AUX
RCLASS
T2P
RCLASS++
HSGATE
PSMN040-100MSE
LT4293
GND
EN
TG12
BG45TG78 TG45BG78
HSSRC
ISOLATED
POWER
SUPPLY
GND
RUN
V
OUT
VIN
22µF
+
RCLS
49.9Ω
RCLS++
118Ω
+
47nF
3.3k
100k
CPD2
0.047µF
CPD1
0.047µF
OPTO PSE TYPE
(TO µP)