STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features * Maximum junction temperature: TJ = 175 C 1 * Tail-less switching off * VCE(sat) = 1.85 V (typ.) @ IC = 80 A 3 2 * Tight parameters distribution 1 TO-3PF TAB * Safe paralleling * Low thermal resistance 2 3 3 2 1 1 TO-247 TO-3P Figure 1. Internal schematic diagram C (2 or TAB) Applications * Photovoltaic inverters * Uninterruptible power supply * Welding * Power factor correction * Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G (1) E (3) Table 1. Device summary Order code Marking Package Packaging STGFW80V60F GFW80V60F TO-3PF Tube STGW80V60F GW80V60F TO-247 Tube STGWT80V60F GWT80V60F TO-3P Tube May 2014 This is information on a product in full production. DocID026386 Rev 1 1/19 www.st.com 19 Contents STGFW80V60F, STGW80V60F, STGWT80V60F Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 2/19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 TO-3PF, STGFW80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 TO-247, STGW80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 TO-3P, STGWT80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 DocID026386 Rev 1 STGFW80V60F, STGW80V60F, STGWT80V60F 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-247 TO-3PF TO-3P VCES Collector-emitter voltage (VGE = 0) IC Continuous collector current at TC = 25 C IC 600 V (1) 120 A Continuous collector current at TC = 100 C 80 A ICP Pulsed collector current 240 A VGE Gate-emitter voltage 20 V PTOT Total dissipation at TC = 25 C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 C) TSTG Storage temperature range - 55 to 150 C Operating junction temperature - 55 to 175 C (2) TJ 469 79 W 3.5 kV 1. Current level is limited by bond wires. 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Value Symbol Parameter Unit TO-247 TO-3PF TO-3P RthJC Thermal resistance junction-case RthJA Thermal resistance junction-ambient DocID026386 Rev 1 0.32 1.9 50 C/W C/W 3/19 Electrical characteristics 2 STGFW80V60F, STGW80V60F, STGWT80V60F Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.85 VGE = 15 V, IC = 80 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 80 A TJ = 175 C VGE(th) Max. 600 VGE = 15 V, IC = 80 A VCE(sat) Typ. 2.3 2.15 V 2.4 5 6 7 V VCE = 600 V 100 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/19 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 80 A, VGE = 15 V, see Figure 28 Qge Gate-emitter charge Qgc Gate-collector charge DocID026386 Rev 1 Min. Typ. Max. Unit - 10800 - nF - 390 - pF - 220 - pF - 448 - nC - 76 - nC - 184 - nC STGFW80V60F, STGW80V60F, STGWT80V60F Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time - 60 - ns Current rise time - 30 - ns - 2200 - A/s - 220 - ns - 17 - ns Turn-on current slope VCE = 400 V, IC = 80 A, RG = 10 , VGE = 15 V, see Figure 27 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 1.8 - mJ Eoff(2) Turn-off switching losses - 1 - mJ Total switching losses - 2.8 - mJ Turn-on delay time - 60 - ns Current rise time - 30 - ns Turn-on current slope - 2100 - A/s - 240 - ns - 22 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 80 A, RG = 10 , VGE = 15 V, TJ = 175 C, see Figure 27 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 3.8 - mJ Eoff(2) Turn-off switching losses - 1.25 - mJ Total switching losses - 5.05 - mJ Ets 1. Energy loss include reverse recovery of the external diode. The diode is the same of the co-packed STGW80V60DF 2. Turn-off losses include also the tail of the collector current. DocID026386 Rev 1 5/19 Electrical characteristics 2.1 STGFW80V60F, STGW80V60F, STGWT80V60F Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature for TO-247 and TO-3P GIPD041120131017FSR Ptot (W) Figure 3. Collector current vs. case temperature for TO-247 and TO-3P GIPD011020131024FSR IC (A) VGE 15V, TJ 175 C VGE 15V, TJ 175 C 400 120 300 90 200 60 100 30 0 0 25 50 75 0 0 100 125 150 175 TC(C) Figure 4. Power dissipation vs. case temperature for TO-3PF 9*(97 -& GIPD041120131118FSR IC (A) 11V VGE=15V 7& & Figure 6. Output characteristics (TJ = 25C) 9V 100 125 150 175 TC(C) *,3*)65 ,& $ 75 Figure 5. Collector current vs. case temperature for TO-3PF *,3*)65 3WRW : 50 25 9*(97 -& 7& & Figure 7. Output characteristics (TJ = 175C) GIPD281020131423FSR IC (A) VGE=15V 120 120 80 80 40 40 13V 11V 9V 7V 0 0 6/19 1 2 3 4 VCE(V) DocID026386 Rev 1 0 0 1 2 3 4 VCE(V) STGFW80V60F, STGW80V60F, STGWT80V60F Figure 8. VCE(sat) vs. junction temperature GIPD041120131129FSR VCE(sat) (V) IC= 160A Electrical characteristics Figure 9. VCE(sat) vs. collector current VGE= 15V VGE= 15V 3.5 GIPD041120131136FSR VCE(sat) (V) TJ= 175C 3.5 3 3 IC= 80A 2.5 2.5 2 2 1.5 1 -50 1.5 IC= 40A 0 50 100 150 1 20 TJ(C) Figure 10. Collector current vs. switching frequency for TO-247 and TO-3P GIPD041120131144FSR Ic [A] TJ= 25C TJ= -40C 40 60 80 100 120 140 IC(A) Figure 11. Collector current vs. switching frequency for TO-3PF *,3*)65 ,F>$@ 160 7F & Tc=80C 120 7F & Tc=100 C 80 40 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=10 , VGE = 0/15 V, TJ =175C) 0 1 f [kHz] 10 UHFWDQJXODUFXUUHQWVKDSH GXW\F\FOH 9&& 95* 9*( 97- & I>N+]@ Figure 12. Forward bias safe operating area for Figure 13. Forward bias safe operating area for TO-247 and TO-3P TO-3PF GIPD041120131152FSR IC (A) *,3*)65 ,& $ 100 10 s 10 Single pulse Tc= 25C, TJ<= 175C VGE= 15V 100 s 6LQJOHSXOVH 7F &7 -& 9*( 9 1 ms 1 1 10 100 VCE(V) DocID026386 Rev 1 V V PV 9&( 9 7/19 Electrical characteristics STGFW80V60F, STGW80V60F, STGWT80V60F Figure 14. Normalized VGE(th) vs junction temperature GIPD041120131351FSR VGE(th) (norm) 1.1 IC= 1mA VCE= VGE Figure 15. Normalized V(BR)CES vs. junction temperature GIPD041120131353FSR V(BR)CES (norm) 1.1 IC= 2mA 1.0 0.9 1.0 0.8 0.7 0.6 -50 0 50 100 150 TJ(C) Figure 16. Capacitance variation 0 50 100 150 TJ(C) Figure 17. Gate charge vs. gate-emitter voltage GIPD041120131358FSR C (pF) 0.9 -50 GIPD041120131406FSR VGE (V) 16 IC= 80A VCC= 480V Cies 10000 12 8 1000 4 Coes 100 0.1 1 Cres VCE(V) 10 Figure 18. Switching loss vs collector current E (J) 10000 GIPD041120131413FSR VCC = 400V, VGE = 15V, RG = 10, TJ = 175C 0 0 EON 6000 200 300 400 500 Qg(nC) Figure 19. Switching loss vs gate resistance GIPD041120131419FSR E (J) 8000 8000 100 6000 VCC = 400 V, VGE = 15 V, IC = 80 A, TJ = 175 C EON EOFF 4000 4000 2000 2000 0 20 8/19 40 60 80 100 120 140 IC(A) DocID026386 Rev 1 0 0 EOFF 10 20 30 40 RG() STGFW80V60F, STGW80V60F, STGWT80V60F Figure 20. Switching loss vs temperature E (J) Electrical characteristics Figure 21. Switching loss vs collector-emitter voltage GIPD041120131424FSR GIPD041120131428FSR E (J) VCC= 400V, VGE= 15V, RG= 10, IC= 80A TJ= 175C, VGE= 15V, RG= 10, IC= 80A 6000 4000 EON EON 4000 3000 EOFF EOFF 2000 2000 1000 0 50 100 150 0 150 TJ(C) 350 250 450 VCE(V) Figure 22. Switching times vs. collector current Figure 23. Switching times vs. gate resistance t (ns) GIPD041120131437FSR TJ= 175C, VGE= 15V, RG= 10, VCC= 400V GIPD041120131444FSR t (ns) TJ= 175C, VGE= 15V, IC= 80A, VCC= 400V tdoff tdoff 1000 100 tdon tdon 100 tr tr tf 10 20 tf 40 60 80 100 120 140 IC(A) 10 0 10 20 30 40 RG() Figure 24. Transfer characteristics GIPD041120131324FSR IC (A) TJ=25C VCE=5V 120 TJ=-40C TJ=175C 80 40 0 6 7 8 9 VGE(V) DocID026386 Rev 1 9/19 Electrical characteristics STGFW80V60F, STGW80V60F, STGWT80V60F Figure 25. Thermal impedance for TO-247 and TO-3P ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single pulse 10-2 10-5 10-4 10-2 10-3 10-1 tp (s) Figure 26. Thermal impedance for TO-3PF ZthTOF3T_A K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 10/19 -5 10 -4 10 -3 10 -2 10 DocID026386 Rev 1 -1 10 0 10 tp (s) STGFW80V60F, STGW80V60F, STGWT80V60F 3 Test circuits Test circuits Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit AM01504v1 AM01505v1 Figure 29. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff AM01506v1 DocID026386 Rev 1 11/19 Package mechanical data 4 STGFW80V60F, STGW80V60F, STGWT80V60F Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-3PF, STGFW80V60F Figure 30. TO-3PF drawing 7627132_D 12/19 DocID026386 Rev 1 STGFW80V60F, STGW80V60F, STGWT80V60F Package mechanical data Table 7. TO-3PF mechanical data mm Dim. Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 DocID026386 Rev 1 10.20 13/19 Package mechanical data 4.2 STGFW80V60F, STGW80V60F, STGWT80V60F TO-247, STGW80V60F Figure 31. TO-247 drawing 0075325_G 14/19 DocID026386 Rev 1 STGFW80V60F, STGW80V60F, STGWT80V60F Package mechanical data Table 8. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID026386 Rev 1 5.70 15/19 Package mechanical data 4.3 STGFW80V60F, STGW80V60F, STGWT80V60F TO-3P, STGWT80V60F Figure 32. TO-3P drawing 8045950_A 16/19 DocID026386 Rev 1 STGFW80V60F, STGW80V60F, STGWT80V60F Package mechanical data Table 9. TO-3P mechanical data mm Dim. Min. Typ. Max. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 3.50 L2 18.20 oP 3.10 18.40 18.60 3.30 Q 5 Q1 3.80 DocID026386 Rev 1 17/19 Revision history 5 STGFW80V60F, STGW80V60F, STGWT80V60F Revision history Table 10. Document revision history 18/19 Date Revision 22-May-2014 1 Changes Initial release. DocID026386 Rev 1 STGFW80V60F, STGW80V60F, STGWT80V60F Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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