This is information on a product in full production.
May 2014 DocID026386 Rev 1 1/19
19
STGFW 80V 60F, STGW80V 60F,
STGWT80V60F
Trench gate field-stop IGBT, V series
600 V, 80 A very high speed
Datasheet
-
production da ta
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•Tail-less switching off
•V
CE(sat)
= 1.85 V (typ.) @ I
C
= 80 A
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
Applications
•Photovoltaic inverters
•Uninterrup tib le powe r suppl y
•Welding
•Power factor correction
•Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The d evice is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2 or TAB)
G (1)
E (3)
TO-247
1
23
TO-3P
123
TAB
111
1
2
3
TO-3PF
Table 1. Device summary
Order code Marking Package Packaging
STGFW80V60F GFW80V60F TO-3PF Tube
STGW80V60F GW80V60F TO-247 Tube
STGWT80V60F GWT80V60F TO-3P Tube
www.st.com
Contents STGFW80V60F, STGW80V60F, STGWT80V60F
2/19 DocID026386 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1 TO-3PF, STGFW80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2 TO-247, STGW80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3 T O-3P, STGWT80V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DocID026386 Rev 1 3/19
STGFW80V60F, STGW80V60F, STGWT80V60F Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-247
TO-3P TO-3PF
V
CES
Collector-e mitter vo lt a ge (V
GE
= 0) 600 V
I
C
Continuous collector current at T
C
= 25 °C 120
(1)
1. Current level is limited by bond wires.
A
I
C
Continuous collector current at T
C
= 100 °C 80 A
I
CP(2)
2. Pulse width limited by maximum junction temperature.
Pulsed collector current 240 A
V
GE
Gate-emitter voltage ±20 V
P
TOT
Total dissipation at T
C
= 25 °C 469 79 W
V
ISO
Insulation withst and voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C) 3.5 kV
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-247
TO-3P TO-3PF
R
thJC
Thermal resistance junction-case 0.32 1.9 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGFW80V60F, STGW80V60F, STGWT80V60F
4/19 DocID026386 Rev 1
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static chara cteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0) I
C
= 2 mA 600 V
V
CE(sat)
Collect or-emitter sat uration
voltage
V
GE
= 15 V, I
C
= 80 A 1.85 2.3
V
V
GE
= 15 V, I
C
= 80 A
T
J
= 125 °C 2.15
V
GE
= 15 V, I
C
= 80 A
T
J
= 175 °C 2.4
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 600 V 100 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input cap ac itance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
- 10800 - nF
C
oes
Output capacitance - 390 - pF
C
res
Reverse transfer
capacitance - 220 - pF
Q
g
Total gate charge V
CC
= 480 V, I
C
= 80 A,
V
GE
= 15 V, see Figure 28
- 448 - nC
Q
ge
Gate-emitter charge - 76 - nC
Q
gc
Gate-collector charge - 184 - nC
DocID026386 Rev 1 5/19
STGFW 80V 60F, ST GW8 0V 60F , STG WT80 V6 0F Elect ri cal ch ara cter ist ics
Table 6. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 80 A,
R
G
= 10 Ω, V
GE
= 15 V,
see Figure 27
-60-ns
t
r
Current rise time - 30 - ns
(di/dt)
on
Turn-on current slope - 2200 - A/µs
t
d(off)
Tu rn-off delay time - 220 - ns
t
f
Current fall time - 17 - ns
E
on(1)
1. Energy loss include reverse recovery of the external diode. The diode is the same of the co-packed
STGW80V60DF
Turn-on switch ing losses - 1.8 - mJ
E
off(2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 1 - mJ
E
ts
Total switching losses - 2.8 - mJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 80 A,
R
G
= 10 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 27
-60-ns
t
r
Current rise time - 30 - ns
(di/dt)
on
Turn-on current slope - 2100 - A/µs
t
d(off)
Tu rn-off delay time - 240 - ns
t
f
Current fall time - 22 - ns
E
on(1)
Turn-on switch ing losses - 3.8 - mJ
E
off(2)
Turn-off switching losses - 1.25 - mJ
E
ts
Total switching losses - 5.05 - mJ
Electrical characteristics STGFW80V60F, STGW80V60F, STGWT80V60F
6/19 DocID026386 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature for TO-247 and TO-3P Figure 3. Collector current vs. case temperature
for TO-247 and TO-3P
P
tot
300
200
100
0
025 T
C
(°C)
(W)
100
400
50 75 175125 150
V
GE
≥ 15V, T
J
≤ 175 °C
GIPD041120131017FSR
I
C
60
30
0
025 T
C
(°C)
(A)
100
90
50 75
120
175
V
GE
≥ 15V, T
J
≤ 175 °C
125 150
GIPD011020131024FSR
Figure 4. Power dissipation vs. case
temperature for TO-3PF Figure 5. Collector current vs. case temperature
for TO-3PF
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Figure 6. Output characteristics (T
J
= 25°C) Figure 7. Output characteristics (T
J
= 175°C)
I
C
40
0
01V
CE
(V)
(A)
4
80
23
V
GE
=15V
120
9V
11V
GIPD041120131118FSR
I
C
40
0
01V
CE
(V)
(A)
4
80
23
V
GE
=15V
120 9V
11V
7V
13V
GIPD281020131423FSR
DocID026386 Rev 1 7/19
STGFW 80V 60F, ST GW8 0V 60F , STG WT80 V6 0F Elect ri cal ch ara cter ist ics
Figure 8. V
CE(sat)
vs. junction temperature Figure 9. V
CE(sat)
vs. collector current
Figure 10. C ollector current vs. switching
frequency for TO-247 and TO-3P Figure 11. Collector current vs. switching
frequency for TO-3PF
Figure 12. Forward bias safe opera ting area for
TO-247 and TO -3P Figure 13. Forward bias safe operating area for
TO-3PF
V
CE(sat)
3
2.5
2
1.5
-50 T
J
(°C)
(V)
100
3.5
0 50 150
V
GE
= 15V
I
C
= 160A
I
C
= 80A
I
C
= 40A
1
GIPD041120131129FSR
V
CE(sat)
2.5
2
1.5
20 I
C
(A)
(V)
80
3
40 60
3.5
100
1
V
GE
= 15V
T
J
= -40°C
T
J
= 25°C
T
J
= 175°C
120 140
GIPD041120131136FSR
0
40
80
120
160
110
Ic [A]
f [kHz]
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC
= 400V, R =10
,
V
GE
= 0/15 V, T
J
=175°C)
Tc=80°C
Tc=100 °C
GIPD041120131144FSR
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&&
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9
*(
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I
C
100
10
11V
CE
(V)
(A)
10
10 μs
100 μs
1 ms
Single pulse
Tc= 25°C, T
J
<= 175°C
V
GE
= 15V
100
GIPD041120131152FSR
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Electrical characteristics STGFW80V60F, STGW80V60F, STGWT80V60F
8/19 DocID026386 Rev 1
Figure 14. Normalized V
GE(th)
vs junction
temperature Fig ure 15. Normali ze d V
(BR)CES
vs. junction
temperature
Figure 16. Capa cita nce variation Figure 17. Gate charge vs. gate-emitter voltage
Figure 18. Switching loss vs collector current Figure 19. Switching loss vs gate resistance
V
GE(th)
1.1
1.0
0.6
-50 T
J
(°C)
(norm)
0 50 100 150
I
C
= 1mA
V
CE
= V
GE
0.7
0.8
0.9
GIPD041120131351FSR
V
(BR)CES
1.1
1.0
0.9
-50 T
J
(°C)
(norm)
0 50 100 150
I
C
= 2mA
GIPD041120131353FSR
C
100 V
CE
(V)
(pF)
0.1 1 10
C
ies
1000
10000
C
oes
C
res
GIPD041120131358FSR
V
GE
8
0Q
g
(nC)
(V)
0 100
I
C
= 80A
V
CC
= 480V
4
200
12
300
16
400 500
GIPD041120131406FSR
E
0I
C
(A)
(μJ)
20 40 60
2000
80 100
4000
E
ON
6000
V
CC
= 400V, V
GE
= 15V,
R
G
= 10Ω, T
J
= 175°C
120
E
OFF
140
8000
10000
GIPD041120131413FSR
E
0R
G
(Ω)
(μJ)
01020
2000
4000
6000
30 40
8000
E
OFF
V
CC
= 400 V, V
GE
= 15 V,
I
C
= 80 A, T
J
= 175 °C
E
ON
GIPD041120131419FSR
DocID026386 Rev 1 9/19
STGFW 80V 60F, ST GW8 0V 60F , STG WT80 V6 0F Elect ri cal ch ara cter ist ics
Figure 20. Switching loss vs temperature Figure 21. Switching loss vs collector-emitter
voltage
Figure 22. Switching times vs. collector current Figure 23. Switching times vs. gate resistance
Figure 24. Transfer characteristics
E
1000 T
J
(°C)
(μJ)
050
2000
3000
4000
100 150
E
OFF
V
CC
= 400V, V
GE
= 15V,
R
G
= 10Ω, I
C
= 80A
E
ON
GIPD041120131424FSR
E
0V
CE
(V)
(μJ)
150 350
2000
4000
6000
E
OFF
T
J
= 175°C, V
GE
= 15V,
R
G
= 10Ω, I
C
= 80A
E
ON
250 450
GIPD041120131428FSR
t
I
C
(A)
(ns)
20 40 60
10 80
t
f
T
J
= 175°C, V
GE
= 15V,
R
G
= 10Ω, V
CC
= 400V t
doff
100
t
r
t
don
100 120 140
GIPD041120131437FSR
t
10 R
G
(Ω)
(ns)
01020
100
30
t
f
T
J
= 175°C, V
GE
= 15V,
I
C
= 80A, V
CC
= 400V
40
1000
t
don
t
doff
t
r
GIPD041120131444FSR
I
C
120
80
40
0
67 V
GE
(V)
(A)
89
T
J
=175°C
T
J
=-40°C
T
J
=25°C
V
CE
=5V
GIPD041120131324FSR
Electrical characteristics STGFW80V60F, STGW80V60F, STGWT80V60F
10/19 DocID026386 Rev 1
Figure 25. Thermal impedance for T O-247 and TO-3P
Figure 26. T hermal impedance for TO-3PF
ZthTO2T_A
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
-2
10
-1
K
Single pulse
d=0.5
0.01
0.02
0.05
0.1
0.2
10-5 10-4 10-3
t
p(s)
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
10-2 10-1 100
ZthTOF3T_A
DocID026386 Rev 1 11/19
STGFW80V60F, STGW80V60F, STGWT80V60F Test circuits
3 Test circuits
Figure 27. Test circuit for inductive load
switching Figure 28. Gate charge test circuit
Figure 29. Switching waveform
AM01504v1
AM01505v1
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
Package mechanical data STGFW80V60F, STGW80V60F, STGWT80V60F
12/19 DocID026386 Rev 1
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST tradema rk .
4.1 TO-3PF, STGFW80V60F
Figure 30. TO-3PF drawing
DocID026386 Rev 1 13/19
STGFW80V60F, STGW80V60F, STGWT80V60F Package mechanical data
Table 7. TO-3PF mechanical data
Dim. mm
Min. Typ. Max.
A5.30 5.70
C2.80 3.20
D3.10 3.50
D1 1.80 2.20
E0.80 1.10
F0.65 0.95
F2 1.80 2.20
G10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15
N1.80 2.20
R3.80 4.20
Dia 3.40 3.80
Package mechanical data STGFW80V60F, STGW80V60F, STGWT80V60F
14/19 DocID026386 Rev 1
4.2 TO-247, STGW80V60F
Figure 31. TO-2 47 drawing
0075325_G
DocID026386 Rev 1 15/19
STGFW80V60F, STGW80V60F, STGWT80V60F Package mechanical data
Table 8. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Package mechanical data STGFW80V60F, STGW80V60F, STGWT80V60F
16/19 DocID026386 Rev 1
4.3 TO-3P, STGWT80V60F
Figure 32. TO-3P drawing
DocID026386 Rev 1 17/19
STGFW80V60F, STGW80V60F, STGWT80V60F Package mechanical data
Table 9. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q5
Q1 3.80
Revision history STGFW80V60F, STGW80V60F, STGWT80V60F
18/19 DocID026386 Rev 1
5 Revision history
Table 10. Document revision history
Date Revision Changes
22-May-2014 1 Initial release.
DocID026386 Rev 1 19/19
STGFW 80V 60F, ST GW8 0V 60F , STG WT80 V6 0F
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