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06/28/04
IRF6218PbF
SMPS MOSFET HEXFET® Power MOSFET
Notes through are on page 7
PD -95441
lReset Switch for Active Clamp
Reset DC-DC converters
lLead-Free
Benefits
Applications
lLow Gate to Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
TO-220AB
S
D
G
VDSS RDS(on) max ID
-150V 150m
:
@VGS = -10V -27A
Absolute Maximum Ratings
Parameter Units
VDS Drain-to- Sour c e Vol tag e V
V
GS Gate- to- Sour c e V o ltag e
ID @ TC = 25 °C Continuous Drai n Curre nt, VGS @ 10V A
ID @ TC = 10 0°C Continuous Drai n Curre nt, VGS @ 10V
IDM Pu ls ed D r ai n C ur rent
c
PD @TC = 25°C Maximum Power Dissipation W
Li ne ar D erat i ng Factor W/ °C
dv/dt Peak Diode Recover y dv/dt
h
V/ns
TJ Ope r ati n g J unction and °C
TSTG Storage Te m perature Range
Soldering Temperature, for 10 seconds
Mo unting tor que, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case
g
––– 0.61 °C/W
RθCS Case-to-Sink, Flat, Greased Surface
g
0.50 –––
RθJA Junction-to-Ambient
g
––– 62
1.6
250
Max.
-27
-19
-110
-150
± 20
300 (1.6mm fro m case )
1 0 lbf• in (1.1N•m)
8.2
-55 to + 175
IRF6218PbF
2www.irf.com
S
D
G
Static @ TJ = 25°C (unl ess o ther wise specifie d)
Parameter Min. Typ. Max. Units
V
(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V
∆
V
(BR)DSS
/
∆
T
J B reakdo w n Vol t age Tem p. Coef f ic ient –– – -0. 17 –– – V/ ° C
R
DS(on) Static D rain-t o- Sourc e O n-Resistance ––– 1 20 150 mΩ
V
GS(th) Gate Threshold Voltage -3.0 ––– -5.0 V
I
DSS Drain-to-Source Leakage Current ––– ––– -25 µA
––– ––– -250
I
GSS Gate-to-Source Forward Leakage ––– ––– -100 nA
Gate-to-Source Reverse Leakage ––– ––– 100
Dynamic @ TJ = 25°C (unless otherwise s peci f ied)
Parameter Min. Typ. Max. Units
gfs Forward Transconductance 11 ––– ––– S
gTotal Gate Charge ––– 71 110
gs Gat e- to-Source Cha rge ––– 21 ––– nC
gd Ga t e - to- D rain ( " M i l l e r " ) Ch ar g e ––– 32 –––
t
d(on) T urn-On Delay Ti me ––– 21 –––
t
rRise Time –––70–––ns
t
d(off) Turn-Off Delay Time ––– 35 –––
t
fFall Time –––30–––
C
iss Input Capacitance ––– 2210 –––
C
oss Output Capacitance ––– 370 –––
C
rss R everse Transfer Capacitance ––– 89 – –– pF
C
oss Output Capacitance ––– 2220 –––
C
oss Output Capacitance ––– 170 –––
C
oss
eff.
Effecti v e O utput Capacitance ––– 340 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche En er gy
d
mJ
I
AR
Avalanche Current
c
A
Diode Characteristics
Par a me ter Min . Typ. Max . Un its
ISCo nti n uous S o ur c e Cu r rent ––– ––– -27
(Body Diode) A
ISM Pulsed Source Current ––– ––– -110
(Body Diode)
c
VSD Di ode For war d V ol t a ge ––– ––– - 1.6 V
trr Reve rse Recovery Ti me ––– 150 ––– ns
Qrr Reverse Reco ver y C harge ––– 860 ––– nC
Typ.
–––
–––
Conditions
VDS = -50V, ID = - 16 A
ID = -16A
VDS = -120V
Conditions
VGS = -10V
f
VGS = 0V
VDS = -25V
ƒ = 1.0MHz
210
-16
MOSFET symbol
showing the
integral reverse
p- n juncti o n diode.
TJ = 25°C, IS = -16A, VGS = 0V
f
TJ = 25°C, IF = -16A, VDD = -25 V
di/dt = -100 A/µs
f
Conditions
VGS = 0V, I D = -250µA
Refe renc e to 25° C, ID = -1m A
VGS = -10V, ID = -16A
f
VDS = VGS, ID = -250µA
VDS = -120V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 15 0°C
VGS = -20V
VGS = 20 V
Max.
VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = -120V, ƒ = 1.0MH
z
VGS = 0V, V DS = 0V to -120V
VGS = -10V
f
VDD = -75V
ID = -16A
RG = 3.9Ω
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
vs. Temperature
2 4 6 8 10 12
-VGS, Gate-to-Source V oltage (V)
1.0
10
100
-ID, Drain-to-Source Current (Α)
TJ = 25°C TJ = 175°C
VDS = 50V
≤60µs PU LSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -27A
VGS = -10V
0.1 110 100
-VDS, D rain-t o-Source V oltage (V)
0.01
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
≤60µs PULSE WIDTH
Tj = 25° C
-4.5V
0.1 110 100
-VDS, Drai n-to-S ource Voltage (V)
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
-4.5V
≤60µs PULSE WIDTH
Tj = 175° C
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
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Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
110 100
-VDS, Dr ain-to-Source V oltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
-ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
-VDS, Dr ain-to- Source Voltage (V )
1
10
100
1000
-ID, Drain-to-Source Current (A)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
Tc = 25°C
Tj = 175° C
Single Pulse
0 1020304050607080
QG Total G ate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-VGS, Gate-to-Source Voltage (V)
VDS= 120V
VDS= 75V
VDS= 30V
ID= -16A
IRF6218PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 9. Maximum Drain Current vs.
Ambient Temperature
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
25 50 75 100 125 150 175
TC , Case Temperatur e (°C)
0
5
10
15
20
25
30
-ID, Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pul se Durati on (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.264 0.000285
0.206 0.001867
0.140 0.013518
τJ
τJ
τ1
τ1τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
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Fig 13. On-Resistance vs. Gate Voltage
Fig 12. On-Resistance vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms Fig 15c. Maximum Avalanche Energy
vs. Drain Current
D.U.T. V
D
S
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-VGS
Q
G
Q
GS
Q
GD
V
G
Charge
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
tpV
(BR)DSS
I
AS
0 20406080
-ID , Drain Current (A )
100
150
200
250
300
350
400
RDS (on) , Drain-to-Source On Resistance (mΩ)
VGS = - 10V
4 5 6 7 8 9 10 11 12
-VGS, G ate -to - Source Voltage (V )
0
100
200
300
400
500
600
700
800
900
1000
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = -27A
25 50 75 100 125 150 175
Starti ng TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
900
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP -4.6A
-6.3A
BOTTOM-16A
IRF6218PbF
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Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Starting TJ = 25°C, L = 1.6mH, RG = 25Ω, I AS = -17A.
ISD ≤ -17A, di/dt ≤ -520A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Rq is measured at T J of approximately 90°C.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/04
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 ( .022 )
0.46 ( .018 )
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0. 93 ( .037 )
0. 69 ( .027 )
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10. 5 4 ( .415)
10. 2 9 ( .405)
2.87 (.113)
2.62 (.103)
15.24 (.60 0)
14.84 (.58 4)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 ( .01 4) M B A M
4
1 2 3
NOTES:
1 D IMENSION ING & T OL ERA NCING P ER ANS I Y1 4 .5 M, 198 2. 3 OUT L INE CONFOR MS TO J E DEC OUTLINE TO-22 0AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LE AD AS S I G N M E NTS
IGBTs, CoPAC
K
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
EXAMPLE:
IN THE ASSEMBLY LINE "C"
THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED ON WW 19, 1997 PART NUMBE
R
ASSEMBLY
LOT CODE
DATE CODE
YEAR 7 = 1997
LINE C
WEEK 19
LOGO
RECTIFIER
INTERNATIONAL
Note: "P" in assembly line
position indicates "Lead-Free"
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/