HMC990LP4E v06.0114 Typical Applications Features The HMC990LP4E is Ideal for: Broadband Operation with no external matching * Multiband/Multi-standard Cellular BTS Diversity Receivers Industry's Most Compact Solution, 4x4 mm2 QFN Package * MIMO Infrastructure Receivers * Wideband Radio Receivers * Multiband Basestations & Repeaters High-side and Low-side LO injection Operation Wide IF Frequency Range High Input IP3 of +25.6dBm @ 2200 MHz Power Conversion Gain of 7.9 dB TE * GSM & 3G & LTE/WiMAX/4G Input P1dB of 12 dBm SSB Noise Figure of 9 dB 55 dBc Channel-to-Channel Isolation Dedicated Enable Pins for IF & LO amplifiers Single-ended RF & LO input ports Functional Diagram LE MIXERS - SMT BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz General Description O B SO The HMC990LP4E is a high linearity, dual channel downconverting mixer optimized for multi-standard diversity receiver applications that require low power consumption and small size. The HMC990LP4E features new wideband limiting LO amplifiers to achieve an unprecedented RF bandwidth of 700 MHz to 3500 MHz. Unlike conventional narrow-band downconverter RFICs, the HMC990LP4E supports both high-side and low-side LO injection over the entire RF frequency band. The RF and LO input ports are internally matched to 50. The HMC990LP4E integrates LO and IF amplifiers with enable functions, LO and RF baluns and high linearity passive mixer cores with bias control interface. The balanced passive mixer combined with high-linearity IF amplifier architecture of HMC990LP4E provides excellent LO-to-RF, LO-to-IF, and RF-to-IF isolations. The HMC990LP4E provides a very low noise figure of 9dB, and high IIP3 of +25.6dBm allowing device to be used in demanding wideband applications. The HMC990LP4E's input IP3 can be further improved by external matching for narrow-band applications. The HMC990LP4E has typical less than 1.5W power consumption which can be optimized through external bias control pins. The HMC990LP4E also features a very fast enable control interface for to be used for power saving in Time Division Duplex (TDD) applications. The HMC990LP4E is housed in a RoHS compliant 4x4 mm2 leadless QFN package. All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. 1 Information furnished by Analogand Devices believedorders: to be accurate and Microwave reliable. However,Corporation, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery to isplace Hittite Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. NoOrder On-line at www.hittite.com Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Phone: 978-250-3343 or apps@hittite.com Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Electrical Specifications, TA = +25 C, IF Frequency = 150 MHz, LO Power = 0 dBm, Typical Units RF Input Frequency Range Parameter 700 - 3500 MHz LO Input Frequency Range 600 - 3800 MHz 10 - 470 Parameter RF=900 MHz[1] RF=1900 MHz [2] [9] Typ. Typ. Conversion Gain [8] 8.7 7.9 25.1 25.0 8.9 9.3 1 dB Compression (Input) 11.2 12.0 LO leakage @ RF port -53 -52 RF to IF Isolation 45 LO Input Return Loss -12 RF Input Return Loss -11 IF Input Return Loss -12 Channel to Channel Isolation 62 RF=2700 MHz [2] Typ. Typ. Units 7.3 6.9 dB 25.6 24.3 dBm 10.0 10.3 dB 12.0 12.3 dBm -51 -60 dBm LE IP3 (Input) Noise Figure (SSB) MHz RF=2200 MHz [2] TE IF Output Frequency Range [10] 41 42 42 dB -13 -12 -11 dB -13 -15 -17 dB -12 -12 -12 dB 53 52 52 dBc 68 71 69 dBc 70 72 78 dBc 69 70 LO Input Drive Level -6 to +3 -6 to +3 -6 to +3 -6 to +3 dBm LO to IF Isolation [11] -38 -38 -38 -38 dBc B SO +2RF-2LO Response +3RF-3LO Response MIXERS - SMT RF Input Power = -5dBm (-5 dBm / Tone for 2-Tone IP3 Tests, f = 1MHz), VDD_LO1,2 = 3.3V, VDD_IF[3], VDD_IF1,2 = 5V Typical RF Narrow Band Matching Performance See Application Section for Further Details Typ. Units Frequency Range Parameter 1850 - 2050 MHz Conversion Gain 7.9 dB IIP3 25 dBm 9.3 dB IP1dB 12 dBm RF to IF Isolation 41 dB O NF (SSB) Channel to Channel Isolation LO Input Drive Level 53 dBc -6 to +3 dBm All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 Fax:rights 978-250-3373 On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implicationPhone: or otherwise under any patent or patent of Analog Devices.Order Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 2 HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz DC Power Supply Specifications, Conditions Typ. Max. Units. +4.75 +5 +5.25 V LO Supply Volltage (VDD_LO1,2) +3.15 +3.3 +3.45 V VDD_IF IF Amplifier Supply Current when enabled 148 [3] 24 mA VCS1[5] + VCS2[5] 3 mA VDD_IF[3] IF Amplifier Supply Current when disabled 0 VDD_IF1[4] + VDD_IF2[4] VCS1[5] + VCS2[5] LO Amplifier Supply Current when disabled Vgate Bias when enabled LO_BIAS1 + LO_BIAS2 [6] [6] VDD_LO1,2 mA 4 mA 170 mA 4.6 mA 4 mA 5.4 mA VGATE1 + VGATE2 3.6 mA VGATE1 + VGATE2 2 mA LO_BIAS1[6] + LO_BIAS2[6] O B SO Vgate Bias when disabled VDD_LO1,2 mA 3 LE LO Amplifier Supply Current when enabled mA VDD_IF1[4] + VDD_IF2[4] TE Parameter MIXERS - SMT Min. IF Supply Voltage (VDD_IF[3], VDD_IF1,2[4]) All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. 3 Information furnished by Analogand Devices believedorders: to be accurate and Microwave reliable. However,Corporation, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery to isplace Hittite Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. NoOrder On-line at www.hittite.com Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Phone: 978-250-3343 or apps@hittite.com Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz LO/IF, Enable/Disable Interface Specifications, Conditions Min. Typ. LO_EN High Level LO Amplifier Disabled +3 +5 Max. LO_EN Low Level LO Amplifier Enabled 0 0 +1 V IFA1_EN / IFA2_EN High Level Channel1/2 IF Amplifier Disabled +3 +5 5 V IFA1_EN / IFA2_EN Low Level Channel1/2 IF Amplifier Enabled 0 0 +1 Disable Settling Time[7] V 30 ns 130 ns O B SO LE [1] High side LO injection, VGATE1,2 = 5.0V [2] Low side LO injection, VGATE1,2 = 4.8V [3] Supply voltage for IF amplifiers through choke inductors. See application circuit. [4] Supply voltage for bias circuit of IF amplifiers. See application circuit. [5] Bias Control pins for IF amplifiers. See application circuit. [6] Bias Control pins for LO amplifier. See application circuit. [7] Remove bypass capacitors on LO_EN and IFA1,2_EN pins for given settling times. See application circuit. [8] Balun losses at IF output port are de-embedded. [9] 1900 MHz matching band covers 1850 - 2050 MHz [10] The part is characterized with IF = 150 MHz. External matching maybe needed for diffrent IF frequencies. [11] LO Power is 0 dBm, RF Power is -5 dBm. MIXERS - SMT Enable Settling Time[7] Units. V TE Parameter All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 Fax:rights 978-250-3373 On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implicationPhone: or otherwise under any patent or patent of Analog Devices.Order Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 4 HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Conversion Gain vs. VGATE[1] Input IP3 vs. VGATE[1] 31 29 10 27 8 23 21 4 TE 19 2 17 0 0.7 1.1 1.5 1.9 2.3 2.7 3.1 15 0.7 3.5 FREQUENCY (GHz) 4.9 V 5.0 V 100 2.3 2.7 3.1 3.5 4.7 V 4.8 V 4.9 V 5 .0V +3RF -3LO Response vs. VGATE[1] B SO 80 50 1.9 100 90 60 1.5 LE +2RF -2LO Response vs. VGATE[1] 70 1.1 FREQUENCY (GHz) 4.7 V 4.8 V +2RF-2LO RESPONSE (dBc) 25 IIP3(dBm) 6 40 0.7 1.1 1.5 1.9 2.3 2.7 3.1 +3RF-3LO RESPONSE (dBc) CONVERSION GAIN (dB) MIXERS - SMT 12 90 80 70 60 50 40 0.7 3.5 1.1 1.5 FREQUENCY (GHz) 4.7V 4.8V 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) 4.9V 5.0V 4.7V 4.8V 4.9V 5.0V 15 13 NOISE FIGURE (dB) O Noise Figure vs. VGATE[1] 11 9 7 5 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) 4.7 V 4.8 V 4.9 V 5.0 V [1] VGATE is bias voltage for passive mixer cores (VGATE1 and VGATE2 pins). Refer to pin description table. All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. 5 Information furnished by Analogand Devices believedorders: to be accurate and Microwave reliable. However,Corporation, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery to isplace Hittite Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. NoOrder On-line at www.hittite.com Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Phone: 978-250-3343 or apps@hittite.com Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Conversion Gain vs. High Side LO & Low Side LO @ VGATE=4.8V Input IP3 vs. High Side LO & Low Side LO @ VGATE=4.8V 31 29 10 IIP3 (dBm) 6 4 23 21 TE 19 2 17 0 0.7 1.1 1.5 1.9 2.3 2.7 3.1 15 0.7 3.5 FREQUENCY (GHz) 1.9 2.7 3.1 3.5 2.7 3.1 3.5 3.1 3.5 LE LO Leakage @ VGATE=4.8V 80 0 -20 B SO 60 0 0.7 1.1 1.5 1.9 2.3 2.7 3.1 -40 -60 -80 0.7 3.5 1.1 1.5 FREQUENCY (GHz) 1.9 @ RF PORT @ IF PORT Input IP3 vs. LO Drive @ VGATE=4.8V O Conversion Gain vs. LO Drive @ VGATE=4.8V 2.3 FREQUENCY (GHz) +25 C +85 C -40 C 12 31 29 10 27 8 IIP3 (dBm) CONVERSION GAIN (dB) 2.3 Low Side LO RF/IF Isolation vs. Temperature @ VGATE=4.8V 20 1.5 High Side LO Low Side LO 40 1.1 FREQUENCY (GHz) High Side LO ISOLATION (dB) 25 MIXERS - SMT 27 8 LEAKAGE (dBm) CONVERSION GAIN (dB) 12 6 4 25 23 21 19 2 0 0.7 17 1.1 1.5 1.9 2.3 2.7 3.1 FREQUENCY (GHz) -6 dBm -3 dBm 3.5 15 0.7 1.1 1.5 1.9 2.3 2.7 FREQUENCY (GHz) 0 dBm +3 dBm -6 dBm -3 dBm 0 dBm +3dBm All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 Fax:rights 978-250-3373 On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implicationPhone: or otherwise under any patent or patent of Analog Devices.Order Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 6 HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz +2RF -2LO Response vs. LO Drive @ VGATE=4.8V +3RF -3LO Response vs. LO Drive @ VGATE=4.8V +3RF-3LO RESPONSE (dBc) 100 90 80 70 50 40 0.7 1.1 1.5 1.9 2.3 2.7 3.1 50 1.1 1.5 1.9 2.7 3.1 3.5 0 dBm +3 dBm LO Input Return Loss @ VGATE=4.8V 0 -5 -5 -10 B SO -15 -35 0.1 0.7 1.2 1.8 2.3 2.9 3.4 -10 -15 -20 -25 -30 0.1 4 0.7 1.2 FREQUENCY (GHz) 1.8 O IF Output Return Loss @ VGATE=4.8V [1] 15 P1dB (dBm) -5 -20 0.1 3.4 4 2.7 3.1 3.5 Input P1dB vs. Temperature @ VGATE=4.8V 20 -15 2.9 +25 C +85 C -40 C 0 -10 2.3 FREQUENCY (GHz) +25 C +85 C -40 C RETURN LOSS (dB) 2.3 LE 0 RETURN LOSS (dB) 60 -6 dBm -3 dBm 0 dBm +3 dBm RF Input Return Loss @ VGATE=4.8V [1] -30 70 FREQUENCY (GHz) -6 dBm -3 dBm -25 80 40 0.7 3.5 FREQUENCY (GHz) -20 90 TE 60 RETURN LOSS (dB) +2RF-2LO RESPONSE (dBc) MIXERS - SMT 100 10 5 0.2 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) 0.8 0.9 1 0 0.7 1.1 1.5 1.9 2.3 FREQUENCY (GHz) +25 C +85 C -40 C +25 C +85 C -40 C [1] LO input Frequency = 1500MHz, LO power = 0 dBm. All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. 7 Information furnished by Analogand Devices believedorders: to be accurate and Microwave reliable. However,Corporation, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery to isplace Hittite Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. NoOrder On-line at www.hittite.com Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Phone: 978-250-3343 or apps@hittite.com Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Conversion Gain vs. Temperature @ VGATE=5.0V Input IP3 vs. Temperature @ VGATE=5.0V 31 29 10 23 21 4 TE 19 2 17 0 0.7 1.1 1.5 1.9 2.3 2.7 3.1 15 0.7 3.5 FREQUENCY (GHz) 2.3 2.7 3.1 3.5 +3RF -3LO Response vs. Temperature @ VGATE=5.0V 100 90 B SO 80 50 1.9 LE 100 60 1.5 +25 C +85 C -40 C +2RF -2LO Response vs. Temperature @ VGATE=5.0V 70 1.1 FREQUENCY (GHz) +25 C +85 C -40 C +2RF-2LO RESPONSE (dBc) 25 IIP3 (dBm) 6 MIXERS - SMT 27 8 40 0.7 1.1 1.5 1.9 2.3 2.7 3.1 +3RF-3LO RESPONSE (dBc) CONVERSION GAIN (dB) 12 90 80 70 60 50 40 0.7 3.5 1.1 FREQUENCY (GHz) 1.5 1.9 -40 C +25 C +85 C 2.7 3.1 3.5 -40 C +25 C +85 C Noise Figure vs. Temperature @ VGATE=5.0V 17 15 NOISE FIGURE (dB) O 2.3 FREQUENCY (GHz) 13 11 9 7 5 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) +25 C +85 C -40 C All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 Fax:rights 978-250-3373 On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implicationPhone: or otherwise under any patent or patent of Analog Devices.Order Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 8 HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Conversion Gain vs. Temperature @ VGATE=4.9V Input IP3 vs. Temperature @ VGATE=4.9V 31 29 10 27 6 23 21 4 TE 19 2 17 0 0.7 1.1 1.5 1.9 2.3 2.7 3.1 15 0.7 3.5 FREQUENCY (GHz) 2.3 2.7 3.1 3.5 +3RF -3LO Response vs. Temperature @ VGATE=4.9V 100 90 B SO 80 50 1.9 LE 100 60 1.5 +25 C +85 C -40 C +2RF -2LO Response vs. Temperature @ VGATE=4.9V 70 1.1 FREQUENCY (GHz) +25 C +85 C -40 C +2RF-2LO RESPONSE (dBc) 25 IIP3 (dBm) 8 40 0.7 1.1 1.5 1.9 2.3 2.7 3.1 +3RF-3LO RESPONSE (dBc) CONVERSION GAIN (dB) MIXERS - SMT 12 90 80 70 60 50 40 0.7 3.5 1.1 FREQUENCY (GHz) 1.5 1.9 2.7 3.1 3.5 -40 C +25 C +85 C -40 C +25 C +85 C Noise Figure vs. Temperature @ VGATE=4.9V 17 15 NOISE FIGURE (dB) O 2.3 FREQUENCY (GHz) 13 11 9 7 5 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) +25 C +85 C -40 C All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. 9 Information furnished by Analogand Devices believedorders: to be accurate and Microwave reliable. However,Corporation, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery to isplace Hittite Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. NoOrder On-line at www.hittite.com Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Phone: 978-250-3343 or apps@hittite.com Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Conversion Gain vs. Temperature @ VGATE=4.8V Input IP3 vs. Temperature @ VGATE=4.8V 31 29 10 23 21 4 TE 19 2 17 0 0.7 1.1 1.5 1.9 2.3 2.7 3.1 15 0.7 3.5 FREQUENCY (GHz) 2.3 2.7 3.1 3.5 +3RF -3LO Response vs. Temperature @ VGATE=4.8V 100 90 B SO 80 50 1.9 LE 100 60 1.5 +25 C +85 C -40 C +2RF -2LO Response vs. Temperature @ VGATE=4.8V 70 1.1 FREQUENCY (GHz) +25 C +85 C -40 C +2RF-2LO RESPONSE (dBc) 25 IIP3 (dBm) 6 MIXERS - SMT 27 8 40 0.7 1.1 1.5 1.9 2.3 2.7 3.1 +3RF-3LO RESPONSE (dBc) CONVERSION GAIN (dB) 12 90 80 70 60 50 40 0.7 3.5 1.1 FREQUENCY (GHz) 1.5 1.9 -40 C +25 C +85 C 2.7 3.1 3.5 -40 C +25 C +85 C Noise Figure vs. Temperature @ VGATE=4.8V 17 15 NOISE FIGURE (dB) O 2.3 FREQUENCY (GHz) 13 11 9 7 5 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) +25 C +85 C -40 C All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 Fax:rights 978-250-3373 On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implicationPhone: or otherwise under any patent or patent of Analog Devices.Order Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 10 HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Conversion Gain vs. Temperature @ VGATE=4.7V Input IP3 vs. Temperature @ VGATE=4.7V 31 29 10 27 IIP3 (dBm) 8 6 4 23 21 TE 19 2 17 0 0.7 1.1 1.5 1.9 2.3 2.7 3.1 15 0.7 3.5 FREQUENCY (GHz) 2.3 2.7 3.1 3.5 +3RF -3LO Response vs. Temperature @ VGATE=4.7V 100 90 B SO 80 50 1.9 LE 100 60 1.5 +25 C +85 C -40 C +2RF -2LO Response vs. Temperature @ VGATE=4.7V 70 1.1 FREQUENCY (GHz) +25 C +85 C -40 C +2RF-2LO RESPONSE (dBc) 25 40 0.7 1.1 1.5 1.9 2.3 2.7 3.1 +3RF-3LO RESPONSE (dBc) CONVERSION GAIN (dB) MIXERS - SMT 12 90 80 70 60 50 40 0.7 3.5 1.1 1.5 FREQUENCY (GHz) 1.9 2.7 3.1 3.5 -40 C +25 C +85 C -40 C +25 C +85 C Noise Figure vs. Temperature @ VGATE=4.7V 17 15 NOISE FIGURE (dB) O 2.3 FREQUENCY (GHz) 13 11 9 7 5 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) +25 C +85 C -40 C All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. 11 Information furnished by Analogand Devices believedorders: to be accurate and Microwave reliable. However,Corporation, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery to isplace Hittite Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. NoOrder On-line at www.hittite.com Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Phone: 978-250-3343 or apps@hittite.com Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Channel to Channel Isolation vs. IF Frequency 70 65 65 60 55 50 45 45 40 0.7 1.1 1.5 1.9 2.3 2.7 3.1 40 0.7 3.5 FREQUENCY (GHz) 1.1 1.5 1.9 4.7V 4.9V 4.8V 5.0V 2.7 3.1 3.5 IF=50MHz IF=100MHz IF=150MHz IF=200MHz IF=250MHz IF=300MHz IF=350MHz Input IP3, Channel Matching @ VGATE=4.8V LE 12 31 29 10 27 6 4 B SO 8 2 0 0.7 1.1 1.5 1.9 2.3 2.7 3.1 25 23 21 19 17 15 0.7 3.5 1.1 1.5 FREQUENCY (GHz) 1.9 2.7 3.1 3.5 CHANNEL 1 CHANNEL 2 CHANNEL 2 Input IP3 vs. Vdd @ VGATE=4.8V O Conversion Gain vs. Vdd @ VGATE=4.8V 2.3 FREQUENCY (GHz) CHANNEL 1 31 12 29 10 27 8 IIP3 (dBm) CONVERSION GAIN(dB) 2.3 FREQUENCY (GHz) Conversion Gain, Channel Matching @ VGATE=4.8V CONVERSION GAIN (dB) 55 TE 50 60 MIXERS - SMT ISOLATION (dBc) 70 IIP3 (dBm) ISOLATION (dBc) Channel to Channel Isolation vs. VGATE 6 4 25 23 21 19 2 0 0.7 17 1.1 1.5 1.9 2.3 2.7 FREQUENCY (GHz) Vdd_IF=4.75V, Vdd_LO=3.15V Vdd_IF=5.00V, Vdd_LO=3.30V Vdd_IF=5.25V, Vdd_LO=3.45V 3.1 3.5 15 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Vdd_IF=4.75V, Vdd_LO=3.15V Vdd_IF=5.0V, Vdd_LO=3.3V Vdd_IF=5.25V, Vdd_LO=3.45V All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 Fax:rights 978-250-3373 On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implicationPhone: or otherwise under any patent or patent of Analog Devices.Order Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 12 HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Conversion Gain vs. IF Frequency @ LO=850 MHz, VGATE=4.8V IIP3 vs. IF Frequency @ LO=850 MHz, VGATE=4.8V 31 29 10 27 IIP3 (dBm) 8 6 4 23 21 TE 17 0 15 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 FREQUENCY (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.6 0.7 FREQUENCY (GHz) +25 C +85 C -40 C +25 C +85 C -40 C 12 IIP3 vs. IF Frequency @ LO=1800 MHz, VGATE=4.8V LE Conversion Gain vs. IF Frequency @ LO=1800 MHz, VGATE=4.8V 31 29 10 27 8 6 4 2 0 B SO CONVERSION GAIN (dB) 25 19 2 0 0.1 0.2 0.3 0.4 FREQUENCY (GHz) 0.5 0.6 0.7 IIP3 (dBm) CONVERSION GAIN (dB) MIXERS - SMT 12 25 23 21 19 17 15 0 0.1 0.2 0.3 0.4 0.5 FREQUENCY (GHz) +25 C +85 C -40 C O +25 C +85 C -40 C All plots are for Low Side LO injection unless otherwise noted. Balun losses at IF output ports are de-embedded. 13 Information furnished by Analogand Devices believedorders: to be accurate and Microwave reliable. However,Corporation, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery to isplace Hittite Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. NoOrder On-line at www.hittite.com Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Phone: 978-250-3343 or apps@hittite.com Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Harmonics of LO MxN Spurious @ IF Port nLO Spur @ RF Port 1 2 3 4 mRF 0 1 2 3 4 0.7 -55 -48 -65 -64 0 xx -39 -56 -50 -46 -50 1.1 -53 -50 -65 -54 1 -44 0 -40 -19 1.5 -53 -52 -66 -54 2 -66 -53 -60 -58 -76 1.9 -53 -49 -70 -64 3 -100 -59 -92 -66 -100 2.3 -54 -48 -68 -51 4 -113 -107 -112 -109 -110 2.7 -72 -46 -59 -48 3.1 -54 -51 -73 -48 3.5 -59 -63 -59 -46 TE RF Freq. = 0.9 GHz @-5 dBm LO Freq. = 0.8 GHz @ 0 dBm All values in dBc below IF power level (1RF - 1LO). LE LO = 0dBm All values in dBm measured at RF port. MxN Spurious @ IF Port MxN Spurious @ IF Port nLO 0 1 2 3 0 xx -38 -37 -60 1 -50 0 -44 -35 2 -70 -56 -66 -64 4 nLO 4 mRF 0 1 2 3 4 -49 0 xx -38 -39 -63 -45 -73 1 -54 0 -45 -45 -71 -84 2 -70 -81 -68 -78 -94 B SO mRF 3 MIXERS - SMT nLO LO Freq. (GHz) -114 -75 -97 -66 -108 3 -121 -87 -102 -69 -100 -123 -132 -125 -111 -117 4 -123 -138 -123 -142 -117 RF Freq. = 1.9 GHz @-5 dBm LO Freq. = 1.8 GHz @ 0 dBm All values in dBc below IF power level (1RF - 1LO). RF Freq. = 2.5 GHz @-5 dBm LO Freq. = 2.4 GHz @ 0 dBm All values in dBc below IF power level (1RF - 1LO). O Typical Supply Current vs. Vdd VDD_IF VDD_IF1 VDD_IF2 (V) Idd_IF (mA) VDD_LO1, VDD_LO2 (V) Idd_LO (mA) 4.75 162 3.15 177 5.00 180 3.30 170 5.25 198 3.45 181 Truth Table IFA1_EN (V) IFAMP1 IFA2_EN (V) IFAMP2 LO_EN (V) LO_STAGES Low ON Low ON Low ON High OFF High OFF High OFF Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 14 HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Recommended Operating Conditions RF Input Power (VDD_IF= +5V, VDD_LO1,2=3.3V) +20 dBm LO Input Power (VDD_IF= +5V, VDD_LO1,2=3.3V) +20 dBm VDD_IF, VDD_LO1,2 6V VGATE1,2 5.5V Junction Temperature Ambient Temperature Parameter Min. Typ. Max. Units 150 C 85 C Temperature 175C 5.05 W Thermal Resistance (channel to ground paddle) 12.8 C/W Storage Temperature -65 to 150C Operating Temperature -40 to +85 C ESD Sensitivity (HBM) Class 1B -40 TE Max. Channel Temperature Continuous Pdiss (T = 85C) (derate 77.63 mW/C above 85C) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS LE MIXERS - SMT Absolute Maximum Ratings B SO Outline Drawing O NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 6. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, WHITE INK, OR LASER MARK LOCATED APPROX. AS SHOWN. 7. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL BE 0.05mm MAX. 8. PACKAGE WARP SHALL NOT EXCEED 0.05mm 9. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 10. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC990LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [1] Package Marking H990 XXX [1] Max peak reflow temperature of 260 C [2] 4-Digit lot number XXXX 15 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Pin Descriptions Description Interface Schematic 1, 6 RF1, RF2 RF input pins of the mixer, internally matched to 50 Ohms. RF input pins require off_chip DC blocking capacitors. See application circuit. 2,5 N/C Not connected internally. 3,4 VDD_LO1, VDD_LO2 3.3V bias supply for LO Drive stages. Refer to application circuit for appropriate filtering. 7 VGATE2 LE MIXERS - SMT Function TE Pin Number Bias pins for mixer cores. Set from 4.7V to 5.0V for operating frequency band. 8 23 9 10 VDD_IF2 Supply voltage pins for IF amplifiers' bias circuits. Connect to 5V supply through filtering. VDD_IF1 IF2_P IF2_N IF1_N Differential IF outputs.Connect to 5V supply through choke inductors. See application circuit. O 21 VGATE1 B SO 24 22 IF1_P 11,20 VCS2,VCS1 Bias control pins for IF amplifiers. Connect to 5V supply through 130 Ohms resistors. Refer to application section for proper values of resistors to adjust IF amplifier current. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 16 HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Function Description 12,19 IFA2_EN, IFA1_EN Enable pins for IF Amplifiers. When connected to LOW or left unconnected, amplifiers are enabled. For disable mode connect to HIGH. 13,14 LO_BIAS2, LO_BIAS1 Bias control pins for LO Amplifiers. Connect to 5V supply through 150 Ohms resistors. Refer to application section for proper volues of resistors to adjust LO amplifier current. 15,17 GND Connect to RF and DC ground. 16 LE LO_IN LO input of the mixer. Internally matched to 50 Ohms. Requires off_chip DC blocking capacitor. See application circuit. LO_EN Enable for LO Amplifiers. When connected to LOW or left unconnected, amplifiers are enabled. For disable mode connect to HIGH. O 18 Interface Schematic TE Pin Number B SO MIXERS - SMT Pin Descriptions (continued) 17 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz B SO MIXERS - SMT LE TE Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. List of Materials for Evaluation PCB EVAL01- HMC990LP4E [1] O Item Description J1 - J5 PCB Mount SMA Connector TP1,TP2,TP4,TP5,TP8,TP13,TP14 Test Point L1-L4 680 nH Inductor, 0603 Pkg. C45-C47,C50-C51,C53-C55 0.01 F Capacitor, 0603 Pkg C34,C38 4.7 F CaSE A, Tantalum C4 100 pF Capacitor, 0402 Pkg. C2,C7,C19 1 nF Capacitor, 0402 Pkg. C6,C14,C23,C39-C44 10 nF Capacitor, 0402 Pkg. R2,R4-R6,R8,R9-R11,R14-R15,R17-R18,R20,R22,R23,R25 0 ohm Resistor, 0402 Pkg. R24 100 Kohm Resistor, 0402 Pkg. R26-R27 150 ohm Resistor, 0402 Pkg. R28-R29 130 ohm Resistor, 0402 Pkg. T1-T2 1:4 Transformer - ETC4-1T-7TR. [1] Reference this number when ordering complete evaluation PCB Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 18 HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz O B SO LE TE MIXERS - SMT Application Circuit - Broadband Notes: 1-Differential IF output transmission lines should be symmetrical 2-Refer to evaluation PCB for component placements and distances 19 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Application Information TE The HMC990LP4E offers an easy-to-use and complete frequency conversion solution for diversity and MIMO receiver applications in a highly compact 4x4 mm2 QFN package. The HMC990LP4E greatly simplifies the design of diversity and MIMO receiver applications by increasing the integration level and reducing the number of required circuit elements thereby reducing cost, area, and power consumption. Principle of Operation LE The HMC990LP4E has two identical, symmetrical double-balanced passive mixers. These mixers are driven from a common single-ended LO input that is broadband matched to 50 and requires only a standard DC-blocking capacitor. The single-ended LO input is converted into differential through the on-chip integrated balun followed by a LO driver stage. The differential signal is divided into two differential paths and each mixer is driven by a separate LO amplifier. MIXERS - SMT The HMC990LP4E is a broadband dual channel, high dynamic range, high gain, low noise, high-linearity downconverting mixer designed for covering RF frequencies from 700 MHz to 3.5 GHz. The HMC990LP4E's low noise and high linearity performance makes it suitable for a wide range of transmission standards, including LTE, CDMA, GSM, MC-GSM, W-CDMA, UMTS, TD-SCDMA, WiMAX applications. B SO The HMC990LP4E's single-ended RF inputs are converted into differential through the on-chip integrated baluns. The single-ended RF inputs are internally broadband matched to 50 and require only standard DC-blocking capacitors. However, the HMC990LP4E's RF inputs can be externally matched for narrow band application frequency with a simple matching network including a series inductor and a shunt capacitor to further improve the performance. Please refer to the application circuit for narrowband RF input matching for the detailed information. The HMC990LP4E's IF amplifiers are designed for differential 200 output impedance. A few external components are required at these IF outputs for the broadband frequency response as recommended in the application circuit. Please refer to the IF output interface section for more information. The HMC990LP4E requires 5V and 3.3V supply voltages and external bias voltages. Bias voltages generate reference currents for the IF and LO amplifiers. 3.3V supply voltage and the external bias voltages can be generated from 5V supply voltage to operate with a single supply. Please refer to the single supply operation section for more information. O The reference currents to the LO amplifiers and IF amplifiers can be disabled through LO_EN and IFA1_EN, IFA2_EN pins respectively. If the EN pins are connected to LOW or left unconnected, the part operates normally. If the EN pins are connected to HIGH, the LO amplifiers and IF amplifiers are disabled. Single Supply Operation The HMC990LP4E requires 5V and 3.3V supply voltages and the external bias voltages. The external bias voltages except VGATE1, VGATE2 pin voltages are already generated from 5V supply voltage on evaluation board (see application circuit). These bias voltages can be optimized by series resistances with appropriate values from the 5V supply to the bias pins (VCS1, VCS2, LO_BIAS1, LO_BIAS2). The resistor values on VCS1, VCS2 and LO_BIAS1, LO_BIAS2 traces on evaluation board are 130 Ohms and 150 Ohms respectively. Refer to the VCS Interface and LO_BIAS Interface section for more information. The nominal VGATE1, VGATE2 pin voltages are 4.8V that is applied externally. However VGATE1, VGATE2 pin voltages can be tuned between 4.7V and 5V for optimization of Input IP3 and conversion gain performances. After VGATE1, VGATE2 pin voltages are optimized, these pin voltages can be generated from 5V supply by changing the values of series resistors, R14 and R15. Refer to the VGATE interface section for more information. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 20 HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz LE TE MIXERS - SMT The 3.3V supply voltage for the LO amplifiers can be generated from 5V supply voltage by adding 20 Ohms resistors between VDD_LO1, VDD_LO2 pins and 5V supply voltage. VDD_LO1 and VDD_LO2 pins are shorted and connected to VDD_LO1 test point on evaluation board, hence a 10 Ohms resistor (Rvdd_lo) can be added in series with VDD_LO1 test point as shown in Figure 1. The resistor must have a power rating of 1/2W or more. B SO Figure 1. Interface to generate 3.3V for VDD_LO1 and VDD_LO2 pins from 5V Supply. VGATE Interface 18 30 15 25 INPUT IP3 12 20 9 15 6 10 CORVERSION GAIN 3 5 0 0.7 IIP3 (dBm) CONVERSION GAIN (dB) O The VGATE1, VGATE2 pins are bias pins for mixer cores. The nominal VGATE1, VGATE2 pin voltages are 4.8V that is applied externally. However voltage can be tuned between 4.7V and 5V for optimizing input IP3 and conversion gain performances for desired frequency band. Higher IIP3 values can be obtained by increasing the VGATE1, VGATE2 pin voltages but this will reduce mixer's conversion gain. Figure-2 shows the measured conversion gain and IIP3 for four values of the VGATE1, VGATE2 pin voltages. 0 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) 4.7V 4.8V 4.9V 5.0V Figure-2. Conversion Gain & IIP3 vs. RF Frequency over VGATE Pin Voltage @25C, IF =100 MHz [1] [1] Balun losses at IF output ports are de-embedded. 21 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz TE Table-1 shows the typical resistor values that need to be added in series with VGATE1, VGATE2 pins for different VGATE voltages.A fine tune for R14 and R15 resistors can be needed if a better fit is required. Table-1: Resistor values for different VGATE pin voltages Vgate1=Vgate2 R14=R15 4.7V 174 Ohm 4.8V 120 Ohm 56 Ohm LE 4.9V MIXERS - SMT After the VGATE voltage is tuned for optimized IIP3 and conversion gain performance, the VGATE pin voltage can be generated from 5V supply voltage by changing the value of series resistors, R14 and R15 from 0 Ohm to an appropriate value. 5.0V 0 Ohm VCS Interface and LO_BIAS Interface B SO The VCS1, VCS2 pins are bias pins for IF amplifiers on each channel and set the reference currents to these IF amplifiers. The VCS voltage is generated from the 5V supply by series resistances. Higher IIP3 values can be obtained by reducing the values of these series resistances R28 and R29, which will increase the total supply current of the IF amplifiers. Figure-3a shows the measured conversion gain and IIP3 vs. total supply current from the VDD_IF1, VDD_IF2 and VDD_IF test points at 1900MHz. The LO_BIAS1, LO_BIAS2 pins are bias pins for LO amplifiers and set the reference currents to these LO amplifiers. The LO_BIAS voltage is generated from the 5V supply by series resistances R26 and R27. Figure-3b shows the measured conversion gain and IIP3 vs. total supply current from the VDD_LO1 test point at 1900MHz. 9 3 15 25 20 10 nominal bias condition 5 0 155 25 15 6 CORVERSION GAIN 30 0 160 165 170 175 180 185 190 195 200 IF SUPPLY CURRENT(mA) Figure 3a. IIP3 and conversion gain vs. IF stage's Total supply current @25C, RF=1900MHz, IF= 100MHZ , VGATE=4.8V [1] 12 INPUT IP3 9 15 6 3 10 CORVERSION GAIN nominal bias condition 5 0 150 20 IIP3 (dBm) INPUT IP3 18 CONVERSION GAIN (dB) 12 30 IIP3 (dBm) 15 O CONVERSION GAIN (dB) 18 0 155 160 165 170 175 180 185 190 LO SUPPLY CURRENT(mA) Figure 3b. IIP3 and conversion gain vs. LO stage's Total supply current @25C, RF=1900MHz, IF= 100MHZ , VGATE=4.8V [1] [1] Balun losses at IF output ports are de-embedded. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 22 HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz MIXERS - SMT Table-2 and Table-3 show the typical resistor values that are used in series with VCS1, VCS2 and LO_BIAS1, LO_BIAS2 pins for different total supply current values of IF and LO stages. A fine tune for these resistors can be needed if a better fit is required. Table-2: Resistor values for total supply current of IF Amplifiers R28=R29 TE IF Amplifiers Total Supply Current 155mA 820 Ohm 180mA 590 Ohm 390 Ohm LE 200mA Table-3: Resistor values for total supply current of LO Amplifier R26=R27 150mA 620Ohm 170mA 270 Ohm 190mA 0 Ohm B SO LO Amplifier Total Supply Current External RF Matching The HMC990LP4E's RF inputs are internally broadband matched to 50. RF inputs can be externally matched for a specific RF frequency band of interest to further improve Input IP3 (IIP3). Matching RF inputs to a specific RF frequency band can be easily accomplished by adding a series inductor and a shunt capacitor. See Table-4 for values of the external matching components for corresponding RF frequency bands. Figure-4 shows the application circuit with the external components on RF input pins. O LO_BIAS2 and VGATE1, VGATE2 pin voltages can be optimized for a specific RF frequency band by changing the resistor values in series with these pins. Table-1 shows the resistor values (R14, R15) for corresponding VGATE pin voltage. Table-4 shows the resistor value (R26) for recommended LO_BIAS2 pin voltage. Figure-5 shows the measured conversion gain and IIP3 for 900MHz,1900MHz and 2500MHz RF frequency bands. Table-4: Components for Selected Frequency Bands 23 Tune Option Lmatch Cmatch1, Cmatch2 R26 Recommended VGATE1,2 Voltages 900 MHz 6.8nH 2.7pF Open 150 Ohms 5.0V 1900 MHz 2.7nH 1pF Open 270 Ohms 4.8V 2500MHz 1nH Open 1pF 270 Ohms 4.8V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC990LP4E v06.0114 B SO LE TE MIXERS - SMT BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz Figure-4. Application Circuit for Narrowband RF Input Matching 9 35 25 15 30 20 15 6 10 CORVERSION GAIN 3 0 700 800 900 1000 9 20 6 15 3 0 0 1100 25C 85C -40C Figure-5a. IIP3 and Conversion Gain with matching 25 INPUT IP3 5 FREQUENCY (GHz) for 900 MHz band VGATE=5.0 V, IF=100 MHz [1] 12 10 CORVERSION GAIN 1700 IIP3 (dBm) INPUT IP3 12 18 CONVERSION GAIN (dB) O CONVERSION GAIN (dB) 15 30 IIP3 (dBm) 18 5 1800 1900 2000 2100 2200 FREQUENCY (GHz) 25C -40C 85C Figure-5b. IIP3 and Conversion Gain with matching for 1900 MHz band VGATE=4.8 V, IF=100 MHz [1] [1] Balun losses at IF output ports are de-embedded. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 24 HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz 18 35 30 INPUT IP3 12 25 9 20 6 15 3 IIP3 (dBm) CONVERSION GAIN (dB) 10 CORVERSION GAIN 0 5 2400 2500 2600 2700 TE 2300 FREQUENCY (GHz) 25C -40C 85C Figure-5c. IIP3 and Conversion Gain with matching for 2500 MHz bandVGATE=4.8 V, IF=100 MHz [1] It is recommended to use high side LO injection for RF frequencies below 1GHz for better IIP3. For instance, higher IIP3 can be obtained if LO input is driven with high side at RF=900 MHz. Please refer to Figure-6. 31 29 IIP3 (dBm) 27 25 23 21 B SO 19 LE MIXERS - SMT 15 17 15 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) High Side LO Low Side LO Figure-6. Input IP3 vs. High Side LO & Low Side LO @ VGATE=4.8V Input IP3 Dependence on RF Input Power O The HMC990LP4E accepts a wide range of RF input power. Figure-7 shows the IIP3 vs. RF input power for 1900 MHz RF and 150 MHz IF. 31 29 IIP3(dBm) 27 25 23 21 19 17 15 -10 -8 -6 -4 -2 0 RF POWER (dBm) 1900MHz Figure-7. IIP3 vs. RF Input Power, RF=1900MHz, IF=150MHz, VGATE=4.8V [1] Balun losses at IF output ports are de-embedded. 25 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC990LP4E v06.0114 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER, 0.7 - 3.5 GHz The HMC990LP4E's differential IF output pins are biased at the 5V supply voltage through choke inductors as shown in the application circuit. The default values of these choke inductors are 680nH. Figure-8 shows the measured conversion gain vs. IF frequency where 1-dB IF bandwidth is around 470MHz and 3-dB IF bandwidth is above 700MHz. Higher IF bandwidth values can be obtained by reducing the value of the choke inductors. TE The baluns at the IF outputs are used to convert the 200 Ohms differential output impedance of HMC990LP4E to single-ended 50 Ohms for characterization. 10 LE CONVERSION GAIN (dB) 12 MIXERS - SMT IF Output Interface 8 6 4 B SO 2 0 0 100 200 300 400 500 600 700 FREQUENCY (GHz) CG O Figure-8. Conversion gain vs. IF Frequency @ LO=1.5GHz [1] [1] Balun losses at IF output ports are de-embedded. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 26