1
IPS65R1K5CE
2016-03-31Final Data Sheet
tab
IPAKSL
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 700 V
RDS(on),max 1500 mΩ
Id. 5.2 A
Qg.typ 10.5 nC
ID,pulse 8.3 A
Eoss@400V 1.15 µJ
Type/OrderingCode Package Marking RelatedLinks
IPS65R1K5CE PG-TO 251 65S1K5CE see Appendix A
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650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
2016-03-31Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
2016-03-31Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
5.2
3.3 ATC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 8.3 A TC=25°C
Avalanche energy, single pulse EAS - - 26 mJ ID=0.6A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.10 mJ ID=0.6A; VDD=50V; see table 10
Avalanche current, repetitive IAR - - 0.6 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 53 W TC=25°C
Storage temperature Tstg -40 - 150 °C -
Operating junction temperature Tj-40 - 150 °C -
Continuous diode forward current IS- - 3.7 A TC=25°C
Diode pulse current2) IS,pulse - - 8.3 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Maximum diode commutation speed dif/dt - - 500 A/µsVDS=0...400V,ISD<=IS,Tj=25°C
see table 8
1) Limited by Tj max. Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
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650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
2016-03-31Final Data Sheet
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 2.37 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
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650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
2016-03-31Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 2.5 3.0 3.5 V VDS=VGS,ID=0.1mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
1.26
3.28
1.50
-ΩVGS=10V,ID=1A,Tj=25°C
VGS=10V,ID=1A,Tj=150°C
Gate resistance RG- 6.5 - Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 225 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 18 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related1) Co(er) - 10 - pF VGS=0V,VDS=0...480V
Effective output capacitance,
time related2) Co(tr) - 42 - pF ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time td(on) - 7.7 - ns VDD=400V,VGS=13V,ID=1.5A,
RG=10.2Ω;seetable9
Rise time tr- 5.9 - ns VDD=400V,VGS=13V,ID=1.5A,
RG=10.2Ω;seetable9
Turn-off delay time td(off) - 33 - ns VDD=400V,VGS=13V,ID=1.5A,
RG=10.2Ω;seetable9
Fall time tf- 18.2 - ns VDD=400V,VGS=13V,ID=1.5A,
RG=10.2Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 1.3 - nC VDD=480V,ID=1.5A,VGS=0to10V
Gate to drain charge Qgd - 5.8 - nC VDD=480V,ID=1.5A,VGS=0to10V
Gate charge total Qg- 10.5 - nC VDD=480V,ID=1.5A,VGS=0to10V
Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=1.5A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
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2016-03-31Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=1.5A,Tj=25°C
Reverse recovery time trr - 200 - ns VR=400V,IF=1.5A,diF/dt=100A/µs;
see table 8
Reverse recovery charge Qrr - 0.9 - µC VR=400V,IF=1.5A,diF/dt=100A/µs;
see table 8
Peak reverse recovery current Irrm - 8 - A VR=400V,IF=1.5A,diF/dt=100A/µs;
see table 8
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650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
2016-03-31Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
5
10
15
20
25
30
35
40
45
50
55
Ptot=f(TC)
Diagram2:Safeoperatingarea(NonFullPAK)
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
1 µs
10 µs
100 µs
1 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea(NonFullPAK)
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
1 µs
10 µs
100 µs
1 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance(NonFullPAK)
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
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650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
2016-03-31Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
1
2
3
4
5
6
7
8
9
10
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
1
2
3
4
5
6
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 1 2 3 4 5 6
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
6 V5.5V5V 6.5 V 7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
98% typ
RDS(on)=f(Tj);ID=1.0A;VGS=10V
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650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
2016-03-31Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
1
2
3
4
5
6
7
8
9
10
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
01234567891011
0
1
2
3
4
5
6
7
8
9
10
480 V120 V
VGS=f(Qgate);ID=1.5Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
10-1
100
101
102
25 °C
125 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
5
10
15
20
25
30
EAS=f(Tj);ID=0.6A;VDD=50V
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650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
2016-03-31Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-75 -50 -25 0 25 50 75 100 125 150 175
550
570
590
610
630
650
670
690
710
730
750
VBR(DSS)=f(Tj);ID=1.0mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500
0.0
0.5
1.0
1.5
Eoss=f(VDS)
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650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
2016-03-31Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trr
tFtS
Q
FQ
S
dIF/ dt
dIrr / dt
VDS(peak)
Q
rr = QF+ Q
S
trr =tF+tS
VDS
IF
VDS
IF
Rg1
Rg2
Rg1 = Rg2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
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650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
2016-03-31Final Data Sheet
6PackageOutlines
DIM
A
2.0
21-10-2015
ISSUE DATE
EUROPEAN PROJECTION
0.031
0.018
0.018
0.235
0.025
0.181
0.250
0.118
0.086
0.195
0.035
0.026
0.198
MILLIMETERS
4.60
3.00
0.88
3
2.29
4.57
MIN
0.80
0.46
0.65
5.97
0.46
6.35
2.18
0.64
5.04
5.21
1.28
3.60
0.89
6.73
0.89
6.22
0.59
1.15
1.14
2.40
MAX
5.50
5.55
MIN
0.205
3
0.090
0.180
0.050
0.142
INCHES
MAX
0.035
0.045
0.245
0.023
0.035
0.094
0.045
0.265
0.217
0.219
0 2.0
SCALE
4mm
0
DOCUMENT NO.
Z8B00003329
REVISION
06
0.031 0.80 1.25 0.049
A1
b
b2
b4
c
c2
D
D1
E
E1
e
e1
N
L
L1
L2
4.95
Figure1OutlinePG-TO251,dimensionsinmm/inches
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650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
2016-03-31Final Data Sheet
7AppendixA
Table11RelatedLinks
•IFXCoolMOSTMCEWebpage:www.infineon.com
•IFXCoolMOSTMCEapplicationnote:www.infineon.com
•IFXCoolMOSTMCEsimulationmodel:www.infineon.com
•IFXDesigntools:www.infineon.com
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650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
2016-03-31Final Data Sheet
RevisionHistory
IPS65R1K5CE
Revision:2016-03-31
Previous Revision
Date Subjects (major changes since last revision)
2014-09-25 Release of final version
2016-03-31 Modified Rthjc and Id ratings. Modified SOA, Zhtjc curves
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.