1N1183 thru 1N1187R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features * High Surge Capability * Types up to 1000 V VRRM DO-5 Package Maximum ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Unit Repetitive p p peak reverse voltage g VRRM 50 100 200 300 V RMS reverse voltage VRMS 35 70 140 210 V DC blocking voltage VDC 300 V 50 100 200 Continuous forward current IF TC 140 C 35 35 35 35 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 595 595 595 595 A Operating temperature Storage temperature Tj Tstg -65 to 190 -65 to 175 -65 to 190 -65 to 175 -65 to 190 -65 to 175 -65 to 190 -65 to 175 C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) IF = 35 A, Tj = 25 C VR = 50 V, Tj = 25 C VR = 50 V, Tj = 140 C Unit 1.2 10 10 1.2 10 10 1.2 10 10 1.2 10 10 A mA V 0.25 0.25 0.25 0.25 C/W Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 1N1183 thru 1N1187R www.genesicsemi.com 2 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: 1N1183 1N1183A 1N1183AR 1N1183R 1N1184 1N1184A 1N1184AR 1N1184R 1N1186 1N1186A 1N1186AR 1N1186R 1N1187 1N1187R