RURP840CC, RURP860CC Data Sheet January 2002 8A, 400V - 600V Ultrafast Dual Diodes Features The RURP840CC and RURP860CC are ultrafast dual diodes with soft recovery characteristics (trr < 60ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. * Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <60ns These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. * Avalanche Energy Rated * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits Formerly developmental type TA09616. * General Purpose Ordering Information Packaging PART NUMBER PACKAGE JEDEC TO-220AB BRAND RURP840CC TO-220AB RURP840C RURP860CC TO-220AB RURP860C NOTE: When ordering, use the entire part number. ANODE 2 CATHODE ANODE 1 CATHODE (FLANGE) Symbol K A1 Absolute Maximum Ratings A2 (Per Leg) TC = 25oC, Unless Otherwise Specified RURP840CC RURP860CC UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 400 600 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 400 600 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 400 600 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV) (TC = 155oC) 8 8 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) 16 16 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 phase, 60Hz) 100 100 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 75 75 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 20 20 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to 175 -65 to 175 oC (c)2002 Fairchild Semiconductor Corporation RURP840CC, RURP860CC Rev. B RURP840CC, RURP860CC Electrical Specifications (Per Leg) TC = 25oC, Unless Otherwise Specified RURP840CC SYMBOL TEST CONDITION RURP860CC MIN TYP MAX MIN TYP MAX UNITS IF = 8A - - 1.3 - - 1.5 V IF = 8A, TC = 150oC - - 1.0 - - 1.2 V VR = 400V - - 100 - - - A VR = 600V - - - - - 100 A VR = 400V, TC = 150oC VR = 600V, TC = 150oC - - 500 - - - A - - - - - 500 A IF = 1A, dIF/dt = 200A/s - - 60 - - 60 ns IF = 8A, dIF/dt = 200A/s - - 70 - - 70 ns ta IF = 8A, dIF/dt = 200A/s - 32 - - 32 - ns tb IF = 8A, dIF/dt = 200A/s - 21 - - 21 - ns QRR IF = 8A, dIF/dt = 200A/s - 195 - - 195 - nC VR = 10V, IF = 0A - 25 - - 25 - pF 2 oC/W VF IR trr CJ RJC - - 2 - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 500 IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 40 10 100oC 175oC 25oC 1 0.5 0 0.5 1 1.5 2 2.5 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE (c)2002 Fairchild Semiconductor Corporation 175oC 100 100oC 10 1 25oC 0.1 0.01 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RURP840CC, RURP860CC Rev. B RURP840CC, RURP860CC Typical Performance Curves (Continued) 60 100 TC = 25oC, dIF/dt = 200A/s TC = 100oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 50 40 trr 30 ta 20 tb 10 0 0.5 80 40 ta 20 0 1 8 4 trr 60 tb 0.5 1 IF , FORWARD CURRENT (A) FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 200A/s 100 trr 75 ta tb 25 0 0.5 1 8 FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT 125 50 4 IF , FORWARD CURRENT (A) 4 8 8 DC 6 SQ. WAVE 4 2 0 140 145 150 155 160 165 170 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 100 80 60 40 20 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE (c)2002 Fairchild Semiconductor Corporation RURP840CC, RURP860CC Rev. B RURP840CC, RURP860CC Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS I = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT (c)2002 Fairchild Semiconductor Corporation t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RURP840CC, RURP860CC Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4