1
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
SDRXAI
K1
K3
K4
K2
G3,G4
A
A
G1,G2
TISP6NTP2B
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
Device Symbol
Voltage Impu lse
Form Current Impulse
Shape ITSP
A
10/1000 µs10/1000 µs20
10/700 µs5/310 µs25
1.2/50 µs8/20µs60
2/10 µs2/10 µs70
Overvoltage Protection for ISDN DC Feeds:
– Supply Voltages Down to -120 V
– Low 5 mA max. Gate Triggering Current
– High 150 mA min. (25 °C) Holding Current
Rated for Common Impulse Waveforms
How To Or der
Device Package Carrier Order #
TISP6NTP2B D, Small-Outline Tape and Reel TISP6NTP2BDR
Tube TISP6NTP2BD
D Package (Top View)
Description
The TISP6NTP2B has an array of four buffered P-gate forward
conducting thyristors with twin commoned gates and a common
anode connection. Each thyristor cathode has a separate
terminal connection. An antiparallel anode-cathode diode is
connected across each thyristor. The buffer transistors reduce
the gate supply current.
In use, the cathodes of an TISP6NTP2B thyristors are connected
to the four conductors to be protected (see Figure 2 and Figure
3). Each gate is connected to the appropriate negative voltage
feed. The anode of the TISP6NTP2B is connected to the system
common. The TISP6NTP2B is in an 8-pin small-outline surface
mount package.
Positive overvoltages are clipped to common by forward
conduction of the TISP6NTP2B antiparallel diode. In Figure 2, a
negative overvoltage draws a current through the 6.8 Ω resistor
and the voltage developed triggers the thyristor on. In Figure 3,
negative overvoltages are initially clipped close to the negative
supply by emitter follower action of the TISP6NTP2B buffer
transistor. If sufficient clipping current flows, the TISP6NTP2B
thyristor will regenerate and switch into a low voltage on-state
condition. As the negative overvoltage subsides, the high
holding current of the TISP6NTP2B prevents d.c. latchup.
MDRXAM
1
2
3
45
6
7
8K2
A
A
K4
G1,G2
K1
K3
G3,G4
.............................................. UL Recognized Component
2
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device per for mance in their specific applications.
Recommended Operating Conditions
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
TISP6NTP2B Programmable Protector
Electrical Characteristics for any Section, TA = 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Repetitive peak off-state voltage, I
G
=0 V
DRM
-130 V
Repetitive peak gate-cathode voltage, V
KA
=0 V
GKRM
-120 V
Non-repetitive peak on-state pulse current, (see Notes 1 and 2)
I
TSP
A
10/1000 µs(Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4) 20
0.2/310 µs(I3124, open-circuit voltage wave shape 0.5/700 µs)
5/310 µs(ITU-T K.20 & K.21, open-circuit voltage wave shape 10/700 µs)
8/20 µs(IEC 61000-4-5:1995, open-circuit voltage wave shape 1.2/50 µs)
25
25
60
2/10 µs(Bellcore GR-1089-CORE , Issue 1, November 1994, Section 4) 70
Non-repetitiv e peak on-state curr ent, 50/60 Hz, (see Notes 1 and 2)
I
TSM
A
100 ms 7
1s
5s
300 s
900 s
2.7
1.5
0.45
0.43
Non-repetitive peak gate current, 1/2 µspulse, cathodes commoned (see Note 1) I
GSM
25 A
Operating fr ee-air temperature range T
A
-40 to +85 °C
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. Initially the protector must be in thermal equilibrium. The surge may be repeated after the device returns to its initial conditions.
2. These non-repetiti ve rated currents are peak values for either polarity. The rat ed current values may be applied to any cathode-
anode termin al pair. Additionally, all cathode-anode terminal pairs may have their rated current values applied simultaneously (in
this case the anode terminal current will be four times the rated current value of an individual terminal pair).
Min. Typ. Max. Unit
R1, R2 Series resistor for ITU-T recommendation K.20
Seeries resistor for ITU-T recommendation K.2 1 12
20 Ω
Parameter Test Conditions Min. Typ. Ma x. Unit
IDOff-state current VD=V
DRM, IG=0 TJ=25°C-5µA
TJ=85°C-50µA
VFForward voltage IF=0.6A, t
w=500 µs, VGG =-50V
IF=18A, t
w=500 µs, VGG =-50V 3
5V
IHHolding curren t IT=-1A, di/dt = 1A/ms, VGG =-50V, T
J=85°C-150 mA
IGKS Gate reverse current VGG =V
GKRM, VAK =0 TJ=25°C-5µA
TJ=85°C-50µA
IGAT Gate reverse current,
on state IT=-0.6A, t
w=500 µs, VGG =-50V -1 mA
IGAF
Gate reverse current,
forward co nducting
state IF=0.6A, t
w=500 µs, VGG =-50V -40 mA
IGT Gate trigger current IT=-5A, t
p(g)
≥
20 µs, VGG =-50V 5 mA
VGT Gate trigger voltage IT=-5A, t
p(g)
≥
20 µs, VGG =-50V 2.5 V
3
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics for any Section, TA = 25 °C (Unless Otherwise Noted) (continued)
CAK Anode-cathode off-
state capacitance f=1MHz, V
d=1V, I
G=0, (see Note 3) VD=-3V 100 pF
VD=-50V 60 pF
NOTE 3: These capacitance measurements employ a three terminal capacitance bridge incor porating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Param et e r Test Condit io ns Min. Typ . Max. Unit
Thermal Characteristics
TISP6NTP2B Programmable Protector
Parameter Test Conditions Min. Typ. Max. Unit
RθJA Junction to free air thermal resistance Ptot =0.52W, T
A=85 °C, 5 cm2, FR 4 PCB 160 °C/W
4
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device per for mance in their specific applications.
Parameter Measurement Information
Figure 1. Principal Terminal And Gate Transfer Characteristics
PM6XAIA
-v
IS
VS
VGG VD
IH
IT
VT
ITSM
ITSP
V
(BO)
I(BO)
ID
Quadrant I
Forward
Conduction
Characteristic
+v
+i
IFVF
IFSM (= |ITSM|)
IFSP (= |ITSP|)
-i
Quadrant III
Switching
Characteristic
VGK(BO)
PRINCIPAL TERMINAL V-I CHARACTERISTIC
IGT
IGAT
IGAF
IF
+iK
-iK
IT
-iG+iG
GATE TRANSFER
CHARACTERISTIC
IK
IG
TISP6NTP2B Programmable Protector
5
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
APPLICATIONS INFORMATION
Figure 2. Protection of Two ISDN Power Feeds
TISP6NTP2B
TWIN
ISDN
POWER
SUPPLY
-VE
"0 V"
-VE
"0 V"
NUMBER OF
NEGATIV E CLAMP
DIODES DEPENDS
ON "0V " POTENTIAL
ELECTRONIC
SOURCE
ELECTRONIC
SINK
ELECTRONIC
SOURCE
ELECTRONIC
SINK
NEGATIVE
SUPPLY
R1A
R2A
R1B t°
t°
t°
t°
R2B
6.8 Ω
6.8 Ω
6
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device per for mance in their specific applications.
TISP6NTP2B Programmable Protector
APPLICATIONS INFORMATION
Figure 3. Protection of Four ISDN Power Feeds
ISDN
POWER
SUPPLY
0
-VE
RESISTOR "R"
MAY BE NEEDED
IF SINK HAS
INTERNAL
CLAMP DIODE
ELECTRONIC
SINK
NEGATIVE
SUPPLY
TISP6NTP2B
t°
t°
t°
t°
t°
t°
t°
t°
ELECTRONIC
SINK
ELECTRONIC
SINK
ELECTRONIC
SINK
0
-VE
0
-VE
0
-VE
R
R
R
R
R1A
R2A
R1B
R2B
7
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MECHANICAL DATA
TISP6NTP2B Programmable Protector
D008 Plastic Small-outline Package
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
NOTES: A. Leads are within 0.25 (0.010) radius of true position at maximum material condition.
B. Body dimensions do not include mold flash or protrusion.
C. Mold flash or protrusion shall not exceed 0.15 (0.006).
D. Lead tips to be planar within ±0.051 (0.002).
D008
8765
4
3
2
1
8-pin Small Outline Microelectronic Standard
Package MS-012, JEDEC Publication 95
MDXXAAC
INDEX
4.80 - 5.00
(0.189 - 0.197)
5.80 - 6.20
(0.228 - 0.244)
3.81 - 4.00
(0.150 - 0.157)
1.35 - 1.75
(0.053 - 0.069)
0.102 - 0.203
(0.004 - 0.008)
0.28 - 0.79
(0.011 - 0.031)
0.51 - 1.12
(0.020 - 0.044)
4.60 - 5.21
(0.181 - 0.205)
0.36 - 0.51
(0.014 - 0.020)
0.25 - 0.50
(0.010 - 0.020)
0.190 - 0.229
(0.0075 - 0.0090)
Pin Spacing
1.27
(0.050)
(see Note A)
6 places
x 45 ° N0M
8 Places
7 ° NOM
4 Places
7 ° NOM
3 Places
4 ° ± 4 °
DIMENSIONS ARE: MILLIMETERS
(INCHES)
8
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device per for mance in their specific applications.
MECHANICAL DATA
TISP6NTP2B Programmable Protector
D008 Tape DImensions
0.8
(0.03)
1.50
(.059)
3.90 - 4.10
(.154 - .161)
5.40 - 5.60
(.213 - .220)
1.95 - 2.05
(.077 - .081)
7.90 - 8.10
(.311 - .319)
6.30 - 6.50
(.248 - .256)
11.70 - 12.30
(.461 - .484)
D008 Package (8-pin Small Outline) Single-Sprocket Tape
Direction of Feed
ø MIN.
Carrier Tape
Embossment
Cover
Tape
NOTES: A. Taped devices are supplied on a reel of the following dimensions:-
Reel diameter:
Reel hub diameter:
Reel axial hole:
B. 2500 devi ces are on a reel.
MDXXATB
DIMENSIONS ARE: MILLIMETERS
(INCHES)
330 +0.0/-4.0
(12.992 +0.0/-.157)
100 ± 2.0
(3.937 ± .079)
13.0 ± 0.2
(.512 ± .008)
0 MIN.
MIN.
0.40
(0.016)
2.0 - 2.2
(.079 - .087)
1.50 - 1.60
(.059 - .063)
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Technical Assistance
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