SSo-$ Gere COMPONENTS + . ? BC182 MAXIMUM RATINGS - - Rating Symbat | 8C1 8c] ac Unit BC183 1a2}183] tas Cotlectar-Emntter Valtage VEO 5a 130] 30 Vde BC184 Collector.dasa Voltage | ve3oq |6a] 45] 43 vde =. Emitter-dasa Voltage | veq9 5.0 Vde Coltactar Current ~ Continuous | ote 100 mAdc CASE 29-02, STYLE 17 Total Oewiee Oissipatian ATa = 25C | 79 350 maf TO-92 (TOQ-226AA) Derate abave 297C i 2.8 mvyj7C Tatal Oevice Oissipatian QTc = 257C Po 1.0 Wat AMPLIFIER TRANSISTORS Oerate abova 25C 4.0 mW Operating and Storage Junction | Ta. T5tq | 755 ta +150 "C NPN SILICON Temperature Ranga 3 THEAMAL CHARACTERISTICS - +> Characteristic Symbat Max Unit: Thermal Resistance, Juactian ta Casa Rajc 125 oC Thermal Resistance, Junction to Ambient] Aayc 387 CW Rater to 8C297 for graphs. ELECTRICAL CHARACTERISTICS {Ta = 25C unless atherwise noted) { Characteristic | Type [ Symbot | Min. [ Typ. [ Max, I Unit OFF CHARACTERISTICS Collectar-Emntter Breakdown Voltage ViBRICEO v (I 7 2.0 mA Ig = QO) gC182 50 - _ 8c183 L 30 - - _ pe gciat 30 = _ Collectar-3asa Sreakdawn Voltage . Vi8AIC3aO v (i 2 10 pA, le =O} 8C182 60 - - 8C133 a5 _ _- sciga a5 _ _ Emitter-Gasea Jreakdawn Voltage ViGR)EIO 7 v (te = 100 pA, ic 2 0) 3.0 - _ Collector Cutaff Current 'c380 nA (Veg = 50 V, Vag = 0) Bcrs2 _ 0.20 15 (Veg = 30 V, VaE = 0) 8c1g3 - 0.20 15 actaa _- 0.20 15 (Veg 2 50 V. Vge 20) Ta 2 125C 8c192 =_ 0.20 4 pa (o3 = 30 , Vge 20) Ta 2 125C ecia3 _ 0.20 4 acta _ 0.290 4 Emutter-Sase Leakage Current 'a0 nA (Veg = 4Vi Ic = 0) _ = 15 ON CHARACTERISTICS OC Current Gain nee (io = 10 pA, Vee = 5 V) 8c19a2 20 acia3 19 Bciga 100 _ _- {Ic = 2 mA, Vce = 5 V} 8C182 i1aqQ _ 4380 acta3 100 _ 850 gcid4 250 - gsa (lc = 100 mA, Veg #5 V} ac1a2 a0 _ gc1g3 20 _ - eciga 130 _ _- Catlector-Ermtter On Vaitaga VCEisau Vv (i = 10 mA, Ig = 5 mA) -_ 0.07 0.25 (le 2 100 mA, ig #5 mA)" _ Q.20 0.60 Base-Emitter Saturation Voltage Vagisact v lic = 100 mA. 1g 25 mA) _ 1.05 = Basa-Ernitter On Voltage : VAElan) v (ic = 100 2a, Voce = 5 VY) t = a.sQ _ Uc = 2mA,VcE #3 V) 0.35 0.62 Q.7a (t = 100 ma, Vce = 5 V) _ 0.83 - *Pulsa-test: Tp 300 s, Outy-cycle 2%. 2-64Rs - SOURCE RESISTANCE (kh 100 J Contours of Canstant Narrow Band Noise Figure 001 Vee x5V Freq = 1 kHz 01 J te - COLLECTOR CURRENT (mA} h we ~ INPUT ADMITTANCE (kQ)} 70a Veg 25V 60g bf +t kHz 500 400 30d 200 100 hyp ~ SMALL SIGNAL CURRENT GAIN Input Admittance TTT \ Yee=8V fil \ Freq = 1 kHz \ i i tt } LPN tt EE SEAN 1 10 100 Ie COLLECTOR CURRENT (mA) 10 Small Signal Current Gain Ig COLLECTOR CURRENT {mA} h,, - QUTPUT AOMITTANCE (inbos) ~~ Process 0. Voltage Feedback Ratio 28 I TTT. Vee 2 SV i 24 ce ay fst kHe i! 20 bh, ~ VOLTAGE FEEDBACK RATIO x 1074 a 100 1 10 190 le - COLLECTOR CURRENT {ma} Output Admittance ya0g Vee 75V f= T kHz e 8 o 1 1 Ie COLLECTOA CURRENT (ma) 10dVeewars COLLECTOR-EMITTER Hee OC CURRENT GAIN Con OUTPUT CAPACITANCE (pF) SATURATION VOLTAGE (V) NF NOISE FIGURE (dB) 1000 800 600 400 200 20 16 A2 .08 04 a 12 OA Jd { 10 01 Al 1 10 | 1 10 OC Current Gain vs Collector Currant Voce 2 5V ! Ta * 125C Ta = 25C 100 lo - COLLECTOR CURRENT (mA) Collector-Emitter Saturation Voltage vs Collector Current te / lg = 10 T, = 125C rt T, = 25C oa 100 I - COLLECTOR CURRENT (mA) Output Capacitance vs Reverse Bias Voltage lex f> 1.0MHz 100 REVERSE BIAS VOLTAGE (V} Noise Figure vs Collector Current rab my wey i TTT t Vecton) ~ BASE-EMITTER VOLTAGE (V) Vce COLLECTOR VOLTAGE {v) Po(Max) ~ MAXIMUM POWEH DISSIPATION (inW) NF - NOISE FIGURE (dB} 10 10 6.0 5.0 4.0 3.0 20 800 706 | 60a 500 400 300 200 100 Base-Emitter ON Voltage vs Collector Current Veg =5V 01 J 1 1 le ~ COLLECTOR CURRENT (mA) Contours of Constant Gain Bandwidth Product (f+) 6.1 1.9 10 te COLLECTOR CURRENT (mA) 100 Maximum Power Dissipation vs Ambient Temperature 70-18 TO-82 100 150 Ta - AMBIENT TEMPERATURE (C) 20a Noise Figure vs Frequency Vee745 | le? 100 uA Ry 7 10k ry \ Hil I Ll I sll ih it Vacisay) BASE-EMITTER SATURATION VOLTAGE (V) NF NOISE FIGURE (dB) Rg SOURCE RESISTANCE (k42) Cing INPUT CAPACITANCE (pF) 1.0 108 Process 04 Base-Emitter Saturation Voltage vs Collector Current PPP l le /tg = 10 Ty 225C ! I Tt Ty 2125C ! 0 Al i 10 Io COLLECTOR CURRENT {mA} 100 Input Capacitance vs Reverse Bias Voltage lp=0 f= 1.0 MHz HEY | i TL | Li} 1.0 10 REVERSE BIAS VOLTAGE (V) 0.3 Noise Figure vs Source Resistance A UT Pere Freq=tkHz TIT 1 tera PTT ied hy Ai. EH iA a al AAD ih oar Pp tead a 106 1k 10k 100k As SOURCE RESISTANCE (92) Contours of Constant Narrow Band Noise Figure Veg 2 5V Freq = 100 Hz |} iil 5 4B Tr eo cuits ag gis] {ty yt EytEL teh- gci82. BC183, SC184 ELE CTRICAL CHARACTERISTICS (continued) [Ta = 25C unless otherwise noted} Characteristic | Type | Symbol Min Typ. | Max. [unit | DYNAMIC CHARACTERISTICS CCorrent-Gain Bandwadth Product . Mrz ne 2 0.5 mA. Voce = 2 Vf = 100 MHz; C142 . _ 100 _ 80183 _ 120 - . acis _ 140 lic = 10 MA. Vee = SV. f= 100 MHz) 8C182 1s [200 ~ : " . ~8C183 tse 260 8C18 tse 286 _ [Common Base Output Capacitance - Cob -. . of (Vog 710 Vi Ice = 0, f= 1 MHz) a _- _- 50 pe . . Common Base lmoput Capacitance 2. Cib oF (Vee = 9.5 Vic = O.f = 1 MHz) _ 3.0 - input tmoedance Lon ae . - - os. Rie Kahm lic = 2 mA. Vee 25 Vf = 1 KHz) 8c182 16 2.2 a5 8C183 3.2 6.0 8.5 BCi8s 60 8.7 10 Voltage Feedback Ratio ort re x107> {ic = 2mA,Vce = 5, f = 1 KH2) - 8C182 1.5 _ _ 80183 _ - 2.0 - gC184 _ 3.0 _ Small-Signal Current Gain Nhe : lic = 2 mA. Vee = 5 Vf = 1 KHz) BC192 125 _ 500 8C183 128 _- 900 7 gciaa 240. _ 900 BC1I82A, BC1A3A 125 - 260 - = 8C1828, 8C1838. 8C1848 24G _ 500 8C183C, 8C184C 450 - 900 Output Admittance hoe umhos (iq = 2mMA.VcE = SOV. f= 1 KHz! BC182 - 3 25 8C183 _ 10 35 . BC 184 . _- 12 50 Norse Figure NF da (Ic 7 0.2 mA, Veg = 5 V, Ag = 2 Kahms, f= 30 Hr ta 15 KHz) . acia4 _ 2 4 tic = 0.2 mA. Voce = 5 V. Ag = 2 Kohms, -- f= 1 KHz, f = 200 Hz) ecre2 _ 2 10 8cia3 _ 2 10 acis4 - 2 4| ud VA National | Process 04 NPN Small Signa| Semiconductor Oo alad | DESCRIPTION (0.832) | 0.0035 | | 0.0045 (0.0889) | | (0.1183) TI Process 04 is a non-overlay, double-diffused, silicon epitaxial device. Complement to Process 71. APPLICATION This device was designed for low noise, high gain, genera; purpose amplifier applications from 10 pA to 100 ma collector current. LI : g.oozs A . 17 (00638) Z | PRINCIPAL DEVICE TYPES 32) yo, , Vi _ T0418: -_BC107 Series L T0-92,ECB: 2N2923 Series 7 2N5172 ij . TO-92, EBC: MPS2923 Series - 0.0026 : - (0.0660) . 0.0015 .7 } : Ss Parameter Conditions Min Typ Max Units Notes NF (spot) - Io = 200 uA, Vee = SV, 2.0 4.0 dB TO-18 f=1 kHz, Rg =2k Con Vog = 10V. f= 1 MHz 2.5 3.5 pF Cip Veg = 0.5V, f= 1 MHz 10 pF fr Veg =5V, Ic = 10 mA 125 250 MHz Nee Voge = SV, Ic = 100 uA 50 Hee Vee = SV, lo=2mA 75 250 600 Nee Vee = AV. Ip = 100 MA 40 Nee Vog = 1V, le = 100 MA 25 Voesan I=10 mA, Ig=1mMA 0.2 V Veesan} Io = 100 mA, }g=10 mA . 0.5 V Veeisat) Ics 10 mA, !g=1mMA 0.85 V Vaersar) Io = 100 MA. Ig= 10 MA 0.95 V BVcga Io =10 pA 45 V BVcEO Ie = 10 mA 35 V BVza9 le=10 yA 7.0 V Icgo Veg = 40V 100 nA lego Veg = 6V 100 n& eeAM = DA vob =I ory vast = 78) =. 8h Ag = 999A vu OSE = 91 (6) ZHY LE = 4 'AG = FDA yu = Dy (8) ZH OOZ = 4 ADE = FO wb = D1 (2) 'ZHA LE = AG = FIA VA OOL = FI (9) WU L =z Ag = 99a yuo = A (sh vurot = 781 = , 8) Aol = IIA vw OOL = 91 (b) ZH L = 5 'AZ = FDA WH 00d = 91 () Vu = 291 = 81 AGt = IIA vu OOL = FI (Z) ZHA b= 4 AG = FIA WH. 00% <SNOLLIGN! e .020 sga S z 006 och ol SzO g OoL 08 (6) bo \ ol ol act g 001 zk 90 G Loo OP OL qt S O St Z6-OL z .040 S96 S @ 005 Ovz ron GZ'0 S ool 08 AL6) tO | ol ot ost S oot Zh 9'0 g Loo Op oe Sl g ac SP 76-OL z .00 GGO g Z .09Z SZI ob Gz'0 g ool 08 (L6} vO l oO Ol USE S oot au 90 5 100 Op or Gk g oe Gp Z6-O1 @ ,0L0 S90 S zc .006 Gzl oO% Gc0 S ool og (6) vO 1 OL oO! os 5 ool v1 90 S 10O Ov oe Gl g Oc Gp Z6-O1 t .020 gg0 S z 00S OZ ol sz0 g oot og (ps) vO \ at ol os| g oot ol 90 S 10'0 or 0S St S as 09 Z6-OL ze .020 49'0 Sg Z 09% SZl ol Sz0 S ool 08 (66) to l at Ol ogl g ool at 90 g 10 Ov 0G Gt g os og z76-OL z .020 SSO S z .00S GZ. ol Gz'0 g aot og (v6) bo t ol ol ost g 001 zk 90 S too Ov os SI g OS 09 76-01 z .020 GSgO S z .00S Ovz ol Gz0 g ool 08 (26) bo | OL ol ust g ool ra 90 S 10'0 oY os St g oS 09 Z6OL @ .040 Sao g Z 092 GEL ol Gz'O S oot OB (26) vO t ot ot OSGi S oot ram 90 S La'O Op as gl g 0S 09 Z6-O1L z .0L0 GSO g < .00S SZ . ol gz0 g OOl OB (6) vo L OL oL Ost g oot zh 90 g 10O ob os Gl G oS 09 76-01 oot OL Zz .GL'0 g z 009 Ovz Wa \ v al oct | ab aL 820 glo g z Olt 0% oot g 0z GZ BOL Kew wy xe uw Kew UW > : n Ke us ut ON suo puog xe x (yuu) ell WW xe (vin), (A) W (A) (vui} eZHAL {A} (v4) WW W (A) BAIS. : (ep) | ose) 3, @ IZHIA) (44) >, INo)sa, (A) 39, % 5, 9 aj a9, 2 o99 {A} (A) og3 SS8904,) sed yy 1 1 qu. 1 ' A (1vs)a9 A ! 4 A | | ona, | 039, A | esPD 4N ' } (LVS)an, A 344 839] (SIDA _e . \ peteriteatioe en 4 POND ee RR Re Lal A Be an ee SaaS 4. ry (panuiued) SAIWAS NOWLOA1 Od |