RFSW2045D RFSW2045D DC to 20GHz GaAs SP4T Switch DC TO 20GHz GaAs SP4T SWITCH Package: Die, 1.91mmx1.33mmx0.10mm Product Description Features RFMD's RFSW2045D is a reflective SP4T GaAs microwave monolithic integrated circuit (MMIC) switch designed using the RFMD FD05 0.5m switch process. The RFSW2045D is developed for broadband communications, instrumentation and electronic warfare. RFSW2045D RF1 Applications V2 V1 Optimum Technology Matching(R) Applied RF2 GaAs HBT GaAs MESFET RFin InGaP HBT SiGe BiCMOS Si BiCMOS V4 V3 SiGe HBT RF3 V6 V5 GaAs pHEMT Low Insertion Loss: 2.8dB at 20GHz High Isolation: 39dB at 20GHz 19nS Switching Speed GaAs pHEMT Technology Broadband Communications Test Instrumentation Fiber Optics Military Aerospace Si CMOS Si BJT V8 V7 GaN HEMT RF4 InP HBT RF MEMS LDMOS Parameter Operating Frequency Insertion Loss (0GHz to 5GHz) Insertion Loss (5GHz to 10GHz) Insertion Loss (10GHz to 15GHz) Insertion Loss (15GHz to 20GHz) Isolation (0GHz to 5GHz) Isolation (5GHz to 10GHz) Isolation (10GHz to 15GHz) Isolation (15GHz to 20GHz) Input Return Loss (DC to 20GHz) Output Return Loss (DC to 20GHz) IIP3 IIP2 Switching Speed Control Current Control Voltage Min. Specification Typ. DC 48 44 40 31 8 11 26 49 -3 2.0 2.0 2.3 2.8 60 50 43 39 11 14 33 54 19 34 -5 Max. 20 2.6 2.8 3.1 3.7 25 60 -8 Unit GHz dB dB dB dB dB dB dB dB dB dB dBm dBm ns uA VDC Condition ON State ON State ON State ON State OFF State OFF State OFF State OFF State ON State ON State 100MHz spacing 2dBm input 100MHz spacing 2dBm input 50% control to 90% RF Sum of all control lines Electrical Specifications, TA =+25C, VCTRL =-5VDC RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS120105 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 RFSW2045D Absolute Maximum Ratings Parameter Rating Unit Drain Bias Voltage (VCTRL) -10 VDC RF Input Power +21 dBm Storage Temperature -40 to +150 C Operating Temperature -40 to +85 C ESD JESD22-A114 Human Body Model (HBM) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Class 0 (All Pads) Typical Electrical Performance Insertion Loss over Temperature (High = -5V, Low = 0V) On State Input Return Loss over Temperature (High = -5V, Low = 0V) 0 0 -0.5 -2.5 -1 -5 -1.5 25C dB -2 85C -40C -2.5 -7.5 85C -40C -12.5 -3 -15 -3.5 -17.5 -4 25C dB -10 -20 0 5 10 15 20 25 0 5 10 Isolation over Temperature (High = -5V, Low = 0V) 20 25 On State Output Return Loss over Temperature (High = -5V, Low = 0V) 0 0 -10 -3 -20 -6 -30 25C dB -40 85C -9 25C dB -12 85C -40C -50 -40C -15 -60 -18 -70 -21 -80 -24 0 5 10 15 GHz 2 of 6 15 GHz GHz 20 25 0 5 10 15 20 25 GHz 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS120105 RFSW2045D IIP3 over Temperature (High = -5v, Low = 0V, Pin = +2dBm) IIP3 over Voltage (25C, Low = 0V, Pin = +2dBm) 37 39 36 38 35 37 34 -8V dBm 33 -5V -3V 32 36 -40C dBm 35 25C 85C 34 31 33 30 32 31 29 0 5 10 15 20 0 25 5 10 15 20 25 GHz GHz IIP2 over Temperature (High = -5v, Low = 0V, Pin = +2dBm) IIP2 over Voltage (25C, Low = 0V, Pin = +2dBm) 64 64 62 62 60 60 58 -8V dBm 56 -5V -3V 54 58 25C 85C 54 52 52 50 50 48 -40C dBm 56 48 0 5 10 15 GHz DS120105 20 25 0 5 10 15 20 25 GHz 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 6 RFSW2045D Die Layout 1807 1453 1303 1153 756 606 456 102 GND RF2 GND GND RF3 GND V3 V5 GND 1234 970 V6 GND RF4 GND GND GND RFIN GND V7 V8 100 V1 100 V2 970 RF1 402 552 702 702 552 402 RFSW2045D 1234 V4 96 RF bondpads are 150x88 except RF4 which is 112x88 492 805 955 1105 All other bondpads are 88x88 All units are in um 1417 1813 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS120105 RFSW2045D Pad RFIN RF1, RF2, RF3, RF4 V1, V2, V3, V4, V5, V6, V7, V8 GND Description Interface Schematic RF input. This pad is DC coupled and matched to 50 from DC to 20GHz. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended. RFin RF output. This pad is DC coupled and matched to 50 from DC to 20GHz. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended. RFout DC control for switch operation. Nominal operating voltage is -5V. 2kohm 5pF Provides ground patch for probe measurements. Truth Table V1 V2 V3 Control Line V4 V5 RF Path Low High High Low High High Low Low High High Low High Low RFIN to RF2 High Low High Low Low High High Low RFIN to RF3 High Low High Low High Low Low High RFIN to RF4 High Low High Low High Low High Low RFOFF (high isolation) V6 V7 V8 Low High Low RFIN to RF1 Measurement Technique All specifications and typical performances reported in this document were based on data taken with the equipment listed in the stated manner. Data was taken using a temperature controlled probe station utilizing 150um pitch GSG probes. The probes were placed on a ceramic coplanar to microstrip launch. The launch was then wire bonded to the die using two 1 mil bondwires. The spacing between the launch and the die was 200um, and the bondwire loop height was 100um. the thickness of the test interface was 125um (5mil). The calibration included the probes and test interfaces, so that the measurement reference plane was at the point of bondwire attachment. Therefore, all data represents the part and accompanying bondwires. Insertion Loss, Return Loss, and Isolation data were taken using an Agilent E8363B PNA. IIP3 and IIP2 data were taken utilizing a pair of Agilent E8257D signal generators and an Agilent E4446A PSA. DS120105 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6 RFSW2045D Preferred Assembly Instructions GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy onto the top face of the die. Ideally it should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for one hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au 20% Sn) eutectic die attach has a melting point of approximately 280C but the absolute temperature being used depends on the leadframe material used and the particular application. The time at maximum temperature should be kept to a minimum. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4um diameter gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependent on the setup and application being used. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially when making RF or ground connections. Handling Precautions To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. ESD/MSL Rating These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpackaged part and therefore no MSL rating applies. Ordering Information 6 of 6 Part Number Description Delivery Method Quantity RFSW2045DS2 DC to 20GHz GaAs SP4T Switch Waffle Pack 2 pc RFSW2045DSB DC to 20GHz GaAs SP4T Switch Waffle Pack 5 pc RFSW2045DSQ DC to 20GHz GaAs SP4T Switch Waffle Pack 25 pc RFSW2045D DC to 20GHz GaAs SP4T Switch Waffle Pack 100 pc 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS120105