G E SOLID STATE O1 DE Pf 3a7soa1 OO1790? a T 3875081 GE SOLID STATE O1E 17907 DL Signal Transistors 2N2923, 2N2924, 2N2925 T-2.9~19 Silicon Transistors TO-98 The GE/RCA 2N2923, 2N2924, and 2N2925 types are planar performance, high value devices are made possible by utilz- passivated NPN silicon transistors intended for general pur- ing advanced manufacturing techniques and epoxy encap- pose applications. The planar passivated construction as- _sulation. sures excellent device stability and life. These high These types are supplied in JEDEC TO-98 package. Devices in TO-98 package are supplied with and without seating flange (see Dimensional Outline). MAXIMUM RATINGS, Absolute-Maximum Values: COLLECTOR TOEMITTER VOLTAGE (VoEQ) eee eee eee ee ec eee c ceca e ceca teen teres euetscesueetertatatntbereetasibantetes EMITTER TO BASE VOLTAGE (Vega... ssee cece cece eee ner e EE ene EERE EEE rier e eee ene COLLECTOR TO BASE VOLTAGE (Vopo) ese ee eects cert tc ee ne rer ee teens eee be beste nbn t rr titi bee be rene r ene CONTINUOUS COLLECTOR CURRENT (Note 1)....... TOTAL POWER DISSIPATION (Ta <25C) (P;)(Note2).. TOTAL POWER DISSIPATION (Ta <55C) (Py) (Note 2)... OPERATING TEMPERATURE (T,) STORAGE TEMPERATURE (Taig). ees eee ee vec sces ec encee eee en eee et tates tetaeetetbevernc tener bene n creole - 55 to + 150C LEAD TEMPERATURE, 116" + 182" (1.5mm 0.8mm) from case for 108 MAX. (TL). os .s eee ceeeececcaccececsceccsccscceeseeee +260C NOTES: 1. Determined from power limitations due to saturation voltage at this current. 2. Derate 3.6 mW/C increase in ambient temperature above 25C, File Number 2051 11 GE S$0L File No. 2051 ID STATE 3875081 GE SOLID STATE * Sighal Trarisistors 0: de aazsoax oox7soa a Q1E 17908 2N2923, 2N2924, 2N2925 an ee & ELECTRICAL CHARACTERISTICS, At Ambient Temperature (T,) = 25C Unless Otherwise Specified D T2917 LIMITS CHARACTERISTICS SYMBOL 2N2923,2N2924,2N2025 UNITS MIN. TYP. MAX Collector Cutoff Current (Vcp = 25V) IcBo - - 0.1 . Weg = 25V, Ta = 100C) Icpo - - 16 pA Emitter Cutoff Current (Vego = 5V) leso = - 04 OC Forward Current Transfer Ratlo (Vog = 4.5V, ic = 2 mA) hee 2N2923 - 115 - - 2N2924 - 165 - - 2N2925 - 215 - - Small-Signal Forward Current Transfer Ratio (ce = 10V, Io = 2mA,f = 1kHz) he 2N2923 90 ~ 180 - 2N2924 150 - 300 - 2N2925 235 - 470 - Input Impedance (Vee = 10Vjic = 2mA, f = 1kHz) bp - 15 = Q Gain Bandwidth Product (Ilo = 4mA, Vop = SV) fy - 160 - MHz Noise Figure (Ig = 100yA, Vog = 5V,f = 10kHz, BW = 1Hz, Ag = 20002) For 2N2925 only NF - 2.8 = dB Collector Capacitance (Vop = 10V, te = 0,f = 1MHz) Cobo 45 7 10 pF TERMINAL CONNECTIONS Lead 1 - Emitter Lead 2 - Collector Lead 3-Base 12