OL DE 3475041 OO?15Sy g 3875081 GE SOLID STATE vicioir Pod D T3315 High-Voltage Power Transistors 2N3439, 2N3440, 2N4063, 2N4064 File Number 64 High-Voltage Silicon N-P-N TERMINAL DESIGNATIONS Planar Transistors 8 For High-Speed Switching and Linear-Amplifier Applications . ase Features: = High voltage ratings: ee Vcso = 450 V max. (2N3439, 2N4063) JEDEC TO-205AD = 300 V max. (2N3440, 2N4064) Vero(sus) = 350 V max. (2N3439, 2N4063) = 250 V max. (2N3440, 2N4064) Maximum safe-area-of-operation curves = Low saturation voltages 82CS-27511 RCA-2N3439", 2N3440**, 2N4063 and 2N4064 are epitaxial- JEDEC TO-205AD WITH FLANGE base silicon n-p-n planar transistors with high breakdown voltages, high-frequency response, and fast switching speeds. These transistors are Intended for industrial, commercial, and military equipment. Typical applications include high- voltage differential and operational amplifiers, high-voltage Inverters, and high-voltage, low-current switching and series regulators. The 2N3439 and the 2N3440 differ primarily in their voitage ratings. They are suppliedin the JEDEC TO-205AD hermetic package. The 2N4063 and 2N4064 have the same voltage ratings as the 2N3439 and 2N3440 respectively, but employ a flange package. a *Formerly RCA Dev. No. TA2458. **Formerly RCA Dev. No. TA2470. MAXIMUM RATINGS, Absolute-Maximum Values: 2N3439 2N3440 2N4063 2N4064 OV onO cee ese c cece cnc teenneneeaenennecupenescceauassregssegaesesee ses ee sees see ee 450 300 Vv * Vceo(sus) . vane 350 250 Vv * Ven ose cece ate aver 7 7 Vv * fosccaceecaee wees 1 1 A 8 Agee cece ces ne eee ee nee eee en eee e ne eE TEETER SEE ARETE ESTEE RO EE EEE EL EET ECE T ES 0.5 0.5 A Pr: Te S 26C 10 10 Ww * Tas 50C i 1 w (2N3439) {2N3440) Te > 50C 0.057 WC Taig, Thee ccncecc eee ne nace acne ene e nen nena eee nese eet es er ee eee eee eee ee een eee e -65 to +200 C * Ti (During soldering) At distance 1/32 in. (0.8 mm) from case for 10.5 MAX. ....seeeeeeeeeeteereeee 255 *2N-types In accordance with JEDEC registration data. 156 OL DE W3875081 0017155 O ; 3875081 G E SOLID STATE O1E 17155 o T7SS37I3 High-Voltage Power Transistors 2N3439, 2N3440, 2N4063, 2N4064 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C TEST CONDITIONS LIMITS CHARACTERISTIC VOLTAGE | CURRENT 2N3439 2N3440 |UNITS Vde mA dc 2N4063 2N4064 VeelVee | Ic |'s Min.| Max. Min.| Max. *\ I 360 - | 20 -|- CBO A Ip=0 260 -|- - | 2| " | 300 0 | 20 -|- A CEO 200 0 -|- | 50} * \ 450 |1.5 - | 05 -|- CEV 300 |-1.5 -|- ~los| ; *| lego 6 0 - | 20 - | 20] wA lh 10 208 40 | 160 40 | 160 FE 10 a 30 | - -|- Vceolsus) 502 | Oo | 350P] 250 Vee lsat) 507 | 4 | 1.3 - | 1.3 . \ Vcglsat) 508 | 4 | 05 - | 05 t *) Rethjg) f=1 MHz 10 5 | 300 |300 Q *! Ne #=1kHz 10 5 25) - 25) - * (heel f=5 MHz 10 10 3] - 3| - *| Cobo Vep 7 10V, le=0 - | 10 - 10 | pF f=1 MHz Cib f=1MHz 5 0 - | 75 | 75] pF Isfa t=1s, 200 50 - 50] mA nonrep. ReJc |17.5 75 o Roja 2N3439, 2N3440 | 150 |150 | CW * 2N-types in accordance with JEDEC registration data. 4 Pulsed, pulse duration = 300 us, duty factor <S2%. b CAUTION: Sustaining voltage Vogo(sus) MUST NOT be measured on a curve tracer. 157 O01 DE 3875081 0017154 2 3875081 GE SOLID STATE O1E 17156 D Ld - High-Voltage Power Transistors T 33 IS 2N3439, 2N3440, 2N4063, 2N4064 PULSED* Hed 000, TE OMELC 6-61 ma 6 Od 0.05 mal Dy 4 nae 5 fy eS on : ie 4 4 2 : | 100 2a. % SHCASE TEMPERATURE (T)* 25C ~, HH gHICURVES MUST BE DERATED LINEARLY 4) gee EMITHL INCREASE IN TEMPERATURE) ba g Teg LIMITED (SLOPE *-3] > Hi = 2k" For SINGLE 5 NONREPETITIVE 5 PULSE Wl 4 lo 8 8 VoEQ MAX. 250 V 6 (2N3440, 2N4064) 4 Voeo MAX. = 350 V (2N3439, 2N4053) , rtd ! Steet 2 4 6 6 nr aaa ae 2 1380 ~8 8 1 10 100 250 1000 COLLECTOR-TO-EMITTER VOLTAGE (Vce)V s2uu-is96e Fig. 1 Maximum operating areas for 2N3439, 2N3440, 2 & < z t Zz S = & 8 ao o FE 2 a z <z = - z 3 2 x z EFFECTIVE CASE TEMP. OR CASE TEMP (Tepp OR Te} C 100 92S 21992 Fig, 2 Current derating curve for ali types. 2N4063, and 2N4064. AMBIENT TEMPERATURE (T,}*C 9208-40203 Fig. 3 - Dissipation derating curve for 2N3439 and 2N3440. 3875081 G 1 GE SOLID STATE DE 3475041 GUbeboe 4 OIE 17157 High-Voltage Power Transistors COLLECTOR-TO-EMITTER VOLTAGE ' t COLLECTOR CURRENT {Ich-mA 92LS~1809 Fig. 4 Typical dc beta characteristics forall types. CASE TEMPERATURE (Tc 19 25C i 2 e z wy 3 3 5 e o 4 3s 3 COLLECTOR-TO-EMITTER VOLTAGE (Vce}-V 9AS-1600 Fig. 6 Typical output characteristics for all types. +o {0 TO SOV 100 mal MERCURY RELAY OR E UVALENT Quy 25mH CHANNEL A wLeTTe? PACKARD He SgcILLOSCOPE i CHANNEL OR EQUIVALENT Ww COMMON + 92C5-12613Rt Fig, 8 Circuit used to measure sustaining voltage Veeotsusl for all types. 2N3439, 2N3440, 2N4063, 2N4064 VOLTAGE (Veg) = 10V 2sec se n a so GAIN-BANOWIDTH PRODUCT o a ' vn 100 COLLECTOR CURRENT {Ig} ~ mA fase Fig. 5 Typical gain bandwidth product for all types. COLLECTOR-TO-EMITTER VOLTAGE tov loo a a o o xy < I % u B 3 & 2 3 2 5 u of 3 o BASE-TO-EMITTER VOLTAGE (Vge}V SzLs-8ST Fig. 7 Typical transfer characteristics for all types. a COLLECTOR CURRENT (1,)mA 250 350 COLLECTOR-TO-EMITTER VOLTAGE (\;}--V 92CS~12611FI The sustaining voltage Vogo(sus) is acceptable when the trace falls to the right and above point A for types 2N3440 and 2N4064. The trace must fall to the right and above point B" for types 2N3439 and 2N4063. Fig. 9 Oscilloscope display for measurement of sustaining voltages. 159 dD 733 Fr)